Operation and modeling of the MOS transistor:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boston [u.a.]
WCB McGraw-Hill
1999
|
| Ausgabe: | 2. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XX, 620 S. graph. Darst. |
| ISBN: | 0070655235 0071167919 |
Internformat
MARC
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| 245 | 1 | 0 | |a Operation and modeling of the MOS transistor |c Yannis Tsividis |
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| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models | |
| 650 | 4 | |a Metal oxide semiconductors |x Mathematical models | |
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Datensatz im Suchindex
| _version_ | 1804135912078049280 |
|---|---|
| adam_text | OPERATION AND MODELING OF THE MOS TRANSISTOR SECOND EDITION YANNIS
TSIVIDIS COLUMBIA UNIVERSITY NEW YORK OXFORD OXFORD UNIVERSITY PRESS
CONTENTS CHAPTER 1 L.L 1.2 1.3 1.4 1.5 1.6 1.7 CHAPTER 2 2.1 2.2 2.3 2.4
SEMICONDUCTORS, JUNCTIONS, AND MOSFET OVERVIEW INTRODUCTION
SEMICONDUCTORS CONDUCTION 1.3.1 TRANSIT TIME 1.3.2 DRIFT 1.3.3 DIFFUSION
CONTACT POTENTIALS THE PN JUNCTION OVERVIEW OF THE MOS TRANSISTOR 1.6.1
BASIC STRUCTURE 1.6.2 A QUALITATIVE DESCRIPTION OF MOS TRANSISTOR
OPERATION 1.6.3 A FLUID DYNAMICAL ANALOG 1.6.4 MOS TRANSISTOR
CHARACTERISTICS A BRIEF OVERVIEW OF THIS BOOK REFERENCES PROBLEMS THE
TWO-TERMINAL MOS STRUCTURE INTRODUCTION THE FIAT-BAND VOLTAGE POTENTIAL
BALANCE AND CHARGE BALANCE EFFECT OF GATE-SUBSTRATE VOLTAGE ON SURFACE
CONDITION 2.4.1 FIAT-BAND CONDITION 2.4.2 ACCUMULATION 1 1 1 8 8 9 15 18
26 34 34 39 41 44 46 48 49 50 50 51 56 58 59 59 XV XVI CONTENTS 2.5 2.6
2.7 CHAPTER 3 3.1 3.2 3.3 3.4 3.5 CHAPTER 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7
2.4.3 DEPLETION AND INVERSION 2.4.4 GENERAL ANALYSIS INVERSION 2.5.1
GENERAL RELATIONS AND REGIONS OF INVERSION 2.5.2 STRONG INVERSION 2.5.3
WEAK INVERSION 2.5.4 MODERATE INVERSION SMALL-SIGNAL CAPACITANCE SUMMARY
OF PROPERTIES OF THE REGIONS OF INVERSION REFERENCES PROBLEMS THE
THREE-TERMINAL MOS STRUCTURE INTRODUCTION CONTACTING THE INVERSION LAYER
THE BODY EFFECT REGIONS OF INVERSION 3.4.1 APPROXIMATE LIMITS 3.4.2
STRONG INVERSION 3.4.3 WEAK INVERSION 3.4.4 MODERATE INVERSION A V CB
CONTROL POINT OF VIEW 3.5.1 FUNDAMENTALS 3.5.2 PINCHOFF VOLTAGE 3.5.3
EXPRESSIONS IN TERMS OF THE PINCHOFF VOLTAGE REFERENCES PROBLEMS THE
FOUR-TERMINAL MOS TRANSISTOR INTRODUCTION TRANSISTOR REGIONS OF
OPERATION GENERAL CHARGE SHEET MODELS 4.3.1 COMPLETE CHARGE SHEET MODEL
4.3.2 SIMPLIFIED CHARGE SHEET MODELS 4.3.3 MODEL BASED ON QUASI-FERMI
POTENTIALS REGIONS OF INVERSION IN TERMS OF TERMINAL VOLTAGES STRONG
INVERSION 4.5.1 COMPLETE SYMMETRIE STRONG-INVERSION MODEL 4.5.2
SIMPLIFIED SYMMETRIE STRONG-INVERSION MODEL 4.5.3 SIMPLIFIED,
SOURCE-REFERENCED, STRONG-INVERSION MODEL 4.5.4 MODEL ORIGIN SUMMARY
WEAK INVERSION MODERATE INVERSION 59 62 64 64 71 74 78 79 87 87 88 91 91
92 101 103 103 106 109 113 113 113 117 120 122 123 125 125 128 131 131
140 146 147 150 150 156 158 169 170 175 CONTENTS XVUE 4.8 INTERPOLATION
MODELS 176 4.9 SOURCE-REFERENCED VS. BODY-REFERENCED MODELING 179 4.10
EFFECTIVE MOBILITY 181 4.11 TEMPERATURE EFFECTS 189 4.12 BREAKDOWN 191
4.13 THE /^-CHANNEL MOS TRANSISTOR 192 4.14 ENHANCEMENT-MODE AND
DEPLETION-MODE TRANSISTORS 194 4.15 MODEL PARAMETER VALUES, MODEL
ACCURACY, AND MODEL COMPARISON 195 REFERENCES 197 PROBLEMS 203 CHAPTER 5
MOS TRANSISTORS WITH LON-IMPLANTED CHANNELS 207 5.1 INTRODUCTION 207 5.2
ENHANCEMENT NMOS TRANSISTORS 208 5.2.1 PRELIMINARIES 208 5.2.2 CHARGES
AND THRESHOLD VOLTAGES 212 5.2.3 DRAIN-TO-SOURCE CURRENT MODEL FOR
STRONG INVERSION 219 5.2.4 SIMPLIFIED MODEL FOR STRONG INVERSION 222
5.2.5 WEAK INVERSION 225 5.3 DEPLETION NMOS TRANSISTORS 225 5.3.1 THE
NEED FOR AN -TYPE IMPLANT 225 5.3.2 CHARGES AND THRESHOLD VOLTAGE 227
5.3.3 TRANSISTOR OPERATION 234 5.4 ENHANCEMENT PMOS TRANSISTORS 240
5.4.1 SURFACE-CHANNEL ENHANCEMENT-MODE PMOS 240 5.4.2 BURIED-CHANNEL
ENHANCEMENT-MODE PMOS 241 REFERENCES 241 PROBLEMS 245 CHAPTER 6
SMALL-DIMENSION EFFECTS 248 BY D. ANTONIADIS, MASSACHUSETTS INSTITUTE OF
TECHNOLOGY 6.1 INTRODUCTION 248 6.2 CHANNEL LENGTH MODULATION 249 6.3
BARRIER LOWERING, TWO-DIMENSIONAL CHARGE SHARING, AND THRESHOLD VOLTAGE
257 6.3.1 INTRODUCTION 257 6.3.2 SHORT-CHANNEL DEVICES 257 6.3.3
NARROW-CHANNEL DEVICES 270 6.3.4 SUMMARY AND COMMENTS 277 6.4
PUNCHTHROUGH 277 6.5 CARRIER VELOCITY SATURATION 280 6.6 HOT CARRIER
EFFECTS*SUBSTRATE CURRENT, GATE CURRENT, AND BREAKDOWN 286 6.7 SCALING
290 XV1I1 CONTENTS 6.8 EFFECT OF SURFACE AND DRAIN SERIES RESISTANCES
296 6.9 EFFECTS DUE TO THIN OXIDES AND HIGH DOPING 298 REFERENCES 301
PROBLEMS 309 CHAPTER 7 THE MOS TRANSISTOR IN DYNAMIC OPERATION*
LARGE-SIGNAL MODELING 312 7.1 INTRODUCTION 312 7.2 QUASI-STATIC
OPERATION 313 7.3 TERMINAL CURRENTS IN QUASI-STATIC OPERATION 317 7.4
EVALUATION OF CHARGES IN QUASI-STATIC OPERATION 325 7.4.1 INTRODUCTION
325 7.4.2 STRONG INVERSION 325 7.4.3 MODERATE INVERSION 331 7.4.4 WEAK
INVERSION 332 7.4.5 GENERAL CHARGE SHEET MODEL 333 7.4.6 DEPLETION 335
7.4.7 ACCUMULATION 336 7.4.8 PLOTS OF CHARGES VERSUS V GS 336 7.4.9 USE
OF CHARGES IN EVALUATING TERMINAL CURRENTS 337 7.5 TRANSIT TIME UNDER DC
CONDITIONS 339 7.6 LIMITATIONS OF THE QUASI-STATIC MODEL 340 7.7
NON-QUASI-STATIC MODELING 347 7.7.1 INTRODUCTION 347 7.7.2 THE
CONTINUITY EQUATION 347 7.7.3 NON-QUASI-STATIC ANALYSIS 348 REFERENCES
354 PROBLEMS 358 CHAPTER 8 SMALL-SIGNAL MODELING FOR LOW AND MEDIUM
FREQUENCIES 359 8.1 INTRODUCTION . 359 8.2 A LOW-FREQUENCY SMALL-SIGNAL
MODEL FOR THE INTRINSIC PART 360 8.2.1 A TWO-PATH VIEW 360 8.2.2 A
SMALL-SIGNAL MODEL FOR THE CHANNEL PATH 361 8.2.3 A SMALL-SIGNAL MODEL
FOR THE DRAIN-TO-SUBSTRATE PATH 365 8.2.4 STRONG INVERSION 367 8.2.5
WEAK INVERSION 378 8.2.6 MODERATE INVERSION 380 8.2.7 GENERAL MODELS 381
8.3 A MEDIUM-FREQUENCY SMALL-SIGNAL MODEL FOR THE INTRINSIC PART 384
8.3.1 INTRODUCTION 384 8.3.2 INTRINSIC CAPACITANCES 385 CONTENTS XIX 8.4
8.5 8.6 CHAPTER 9 9.1 9.2 9.3 9.4 9.5 9.6 CHAPTER 10 10.1 10.2 10.3 10.4
10.5 10.6 10.7 10.8 10.9 SMALL-SIGNAL MODELING FOR THE EXTRINSIC PART
NOISE 8.5.1 INTRODUCTION 8.5.2 WHITE NOISE 8.5.3 FLICKER NOISE 8.5.4
SMALL-DIMENSION EFFECTS 8.5.5 EQUIVALENT-CIRCUIT MODEL GENERAL MODELS
REFERENCES PROBLEMS HIGH-FREQUENCY SMALL-SIGNAL MODELS INTRODUCTION A
COMPLETE QUASI-STATIC MODEL 9.2.1 COMPLETE DESCRIPTION OF CAPACITANCE
EFFECTS 9.2.2 SMALL-SIGNAL EQUIVALENT CIRCUIT TOPOLOGIES 9.2.3
EVALUATION OF CAPACITANCES 9.2.4 FREQUENCY REGION OF VALIDITY
J-PARAMETER MODELS NON-QUASI-STATIC MODELS 9.4.1 INTRODUCTION 9.4.2 A
NON-QUASI-STATIC STRONG-INVERSION MODEL 9.4.3 OTHER APPROXIMATIONS AND
HIGHER-ORDER MODELS 9.4.4 MODEL COMPARISON HIGH-FREQUENCY NOISE
CONSIDERATIONS IN MOSFET MODELING FOR RF APPLICATIONS REFERENCES
PROBLEMS MOSFET MODELING FOR CIRCUIT SIMULATION INTRODUCTION TYPES OF
MODELS COMBINING SEVERAL EFFECTS INTO ONE PHYSICAL MODEL PARAMETER
EXTRACTION ACCURACY PROPERTIES OF GOOD MODELS CONSIDERATIONS AND CHOICES
10.7.1 GENERAL CONSIDERATIONS 10.7.2 CONSIDERATIONS RELATED TO COMPUTER
IMPLEMENTATION BENCHMARK TESTS NONTECHNICAL CONSIDERATIONS REFERENCES
PROBLEMS 405 410 410 414 422 424 425 426 428 438 440 440 440 440 445 451
458 460 467 467 469 490 491 492 495 504 508 513 513 514 516 519 528 529
530 530 533 534 543 543 553 APPENDICES A ENERGY BANDS AND RELATED
CONCEPTS 557 B BASIC LAWS OF ELECTROSTATICS IN ONE DIMENSION 566 C
CHARGE DENSITY, ELECTRIC FIELD, AND POTENTIAL IN THE PN JUNCTION 572 D
ENERGY BAND DIAGRAMS FOR THE TWO-TERMINAL MOS STRUCTURE 574 E CHARGE
DENSITY, ELECTRIC FIELD, AND POTENTIAL IN THE TWO- TERMINAL MOS
STRUCTURE 578 F GENERAL ANALYSIS OF THE TWO-TERMINAL MOS STRUCTURE 580 G
CAREFUL DEFINITIONS FOR THE LIMITS OF MODERATE INVERSION 584 H ENERGY
BAND DIAGRAMS FOR THE THREE-TERMINAL MOS STRUCTURE 587 I GENERAL
ANALYSIS OF THE THREE-TERMINAL MOS STRUCTURE 591 J DRAIN CURRENT
FORMULATION USING QUASI-FERMI POTENTIALS 594 K RESULTS OF A DETAILED
FORMULATION FOR THE DRAIN CURRENT AND DRAIN SMALL-SIGNAL CONDUCTANCE IN
THE SATURATION REGION 598 L EVALUATION OF THE INTRINSIC TRANSIENT SOURCE
AND DRAIN CURRENTS 600 M CHARGES FOR THE ACCURATE STRONG-INVERSION MODEL
603 N QUANTITIES USED IN THE DERIVATION OF THE NON-QUASI-STATIC
Y-PARAMETER MODEL 606 INDEX 609
|
| adam_txt |
OPERATION AND MODELING OF THE MOS TRANSISTOR SECOND EDITION YANNIS
TSIVIDIS COLUMBIA UNIVERSITY NEW YORK OXFORD OXFORD UNIVERSITY PRESS
CONTENTS CHAPTER 1 L.L 1.2 1.3 1.4 1.5 1.6 1.7 CHAPTER 2 2.1 2.2 2.3 2.4
SEMICONDUCTORS, JUNCTIONS, AND MOSFET OVERVIEW INTRODUCTION
SEMICONDUCTORS CONDUCTION 1.3.1 TRANSIT TIME 1.3.2 DRIFT 1.3.3 DIFFUSION
CONTACT POTENTIALS THE PN JUNCTION OVERVIEW OF THE MOS TRANSISTOR 1.6.1
BASIC STRUCTURE 1.6.2 A QUALITATIVE DESCRIPTION OF MOS TRANSISTOR
OPERATION 1.6.3 A FLUID DYNAMICAL ANALOG 1.6.4 MOS TRANSISTOR
CHARACTERISTICS A BRIEF OVERVIEW OF THIS BOOK REFERENCES PROBLEMS THE
TWO-TERMINAL MOS STRUCTURE INTRODUCTION THE FIAT-BAND VOLTAGE POTENTIAL
BALANCE AND CHARGE BALANCE EFFECT OF GATE-SUBSTRATE VOLTAGE ON SURFACE
CONDITION 2.4.1 FIAT-BAND CONDITION 2.4.2 ACCUMULATION 1 1 1 8 8 9 15 18
26 34 34 39 41 44 46 48 49 50 50 51 56 58 59 59 XV XVI CONTENTS 2.5 2.6
2.7 CHAPTER 3 3.1 3.2 3.3 3.4 3.5 CHAPTER 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7
2.4.3 DEPLETION AND INVERSION 2.4.4 GENERAL ANALYSIS INVERSION 2.5.1
GENERAL RELATIONS AND REGIONS OF INVERSION 2.5.2 STRONG INVERSION 2.5.3
WEAK INVERSION 2.5.4 MODERATE INVERSION SMALL-SIGNAL CAPACITANCE SUMMARY
OF PROPERTIES OF THE REGIONS OF INVERSION REFERENCES PROBLEMS THE
THREE-TERMINAL MOS STRUCTURE INTRODUCTION CONTACTING THE INVERSION LAYER
THE BODY EFFECT REGIONS OF INVERSION 3.4.1 APPROXIMATE LIMITS 3.4.2
STRONG INVERSION 3.4.3 WEAK INVERSION 3.4.4 MODERATE INVERSION A "V CB
CONTROL" POINT OF VIEW 3.5.1 FUNDAMENTALS 3.5.2 "PINCHOFF' VOLTAGE 3.5.3
EXPRESSIONS IN TERMS OF THE "PINCHOFF VOLTAGE REFERENCES PROBLEMS THE
FOUR-TERMINAL MOS TRANSISTOR INTRODUCTION TRANSISTOR REGIONS OF
OPERATION GENERAL CHARGE SHEET MODELS 4.3.1 COMPLETE CHARGE SHEET MODEL
4.3.2 SIMPLIFIED CHARGE SHEET MODELS 4.3.3 MODEL BASED ON QUASI-FERMI
POTENTIALS REGIONS OF INVERSION IN TERMS OF TERMINAL VOLTAGES STRONG
INVERSION 4.5.1 COMPLETE SYMMETRIE STRONG-INVERSION MODEL 4.5.2
SIMPLIFIED SYMMETRIE STRONG-INVERSION MODEL 4.5.3 SIMPLIFIED,
SOURCE-REFERENCED, STRONG-INVERSION MODEL 4.5.4 MODEL ORIGIN SUMMARY
WEAK INVERSION MODERATE INVERSION 59 62 64 64 71 74 78 79 87 87 88 91 91
92 101 103 103 106 109 113 113 113 117 120 122 123 125 125 128 131 131
140 146 147 150 150 156 158 169 170 175 CONTENTS XVUE 4.8 INTERPOLATION
MODELS 176 4.9 SOURCE-REFERENCED VS. BODY-REFERENCED MODELING 179 4.10
EFFECTIVE MOBILITY 181 4.11 TEMPERATURE EFFECTS 189 4.12 BREAKDOWN 191
4.13 THE /^-CHANNEL MOS TRANSISTOR 192 4.14 ENHANCEMENT-MODE AND
DEPLETION-MODE TRANSISTORS 194 4.15 MODEL PARAMETER VALUES, MODEL
ACCURACY, AND MODEL COMPARISON 195 REFERENCES 197 PROBLEMS 203 CHAPTER 5
MOS TRANSISTORS WITH LON-IMPLANTED CHANNELS 207 5.1 INTRODUCTION 207 5.2
ENHANCEMENT NMOS TRANSISTORS 208 5.2.1 PRELIMINARIES 208 5.2.2 CHARGES
AND THRESHOLD VOLTAGES 212 5.2.3 DRAIN-TO-SOURCE CURRENT MODEL FOR
STRONG INVERSION 219 5.2.4 SIMPLIFIED MODEL FOR STRONG INVERSION 222
5.2.5 WEAK INVERSION 225 5.3 DEPLETION NMOS TRANSISTORS 225 5.3.1 THE
NEED FOR AN -TYPE IMPLANT 225 5.3.2 CHARGES AND THRESHOLD VOLTAGE 227
5.3.3 TRANSISTOR OPERATION 234 5.4 ENHANCEMENT PMOS TRANSISTORS 240
5.4.1 SURFACE-CHANNEL ENHANCEMENT-MODE PMOS 240 5.4.2 BURIED-CHANNEL
ENHANCEMENT-MODE PMOS 241 REFERENCES 241 PROBLEMS 245 CHAPTER 6
SMALL-DIMENSION EFFECTS 248 BY D. ANTONIADIS, MASSACHUSETTS INSTITUTE OF
TECHNOLOGY 6.1 INTRODUCTION 248 6.2 CHANNEL LENGTH MODULATION 249 6.3
BARRIER LOWERING, TWO-DIMENSIONAL CHARGE SHARING, AND THRESHOLD VOLTAGE
257 6.3.1 INTRODUCTION 257 6.3.2 SHORT-CHANNEL DEVICES 257 6.3.3
NARROW-CHANNEL DEVICES 270 6.3.4 SUMMARY AND COMMENTS 277 6.4
PUNCHTHROUGH 277 6.5 CARRIER VELOCITY SATURATION 280 6.6 HOT CARRIER
EFFECTS*SUBSTRATE CURRENT, GATE CURRENT, AND BREAKDOWN 286 6.7 SCALING
290 XV1I1 CONTENTS 6.8 EFFECT OF SURFACE AND DRAIN SERIES RESISTANCES
296 6.9 EFFECTS DUE TO THIN OXIDES AND HIGH DOPING 298 REFERENCES 301
PROBLEMS 309 CHAPTER 7 THE MOS TRANSISTOR IN DYNAMIC OPERATION*
LARGE-SIGNAL MODELING 312 7.1 INTRODUCTION 312 7.2 QUASI-STATIC
OPERATION 313 7.3 TERMINAL CURRENTS IN QUASI-STATIC OPERATION 317 7.4
EVALUATION OF CHARGES IN QUASI-STATIC OPERATION 325 7.4.1 INTRODUCTION
325 7.4.2 STRONG INVERSION 325 7.4.3 MODERATE INVERSION 331 7.4.4 WEAK
INVERSION 332 7.4.5 GENERAL CHARGE SHEET MODEL 333 7.4.6 DEPLETION 335
7.4.7 ACCUMULATION 336 7.4.8 PLOTS OF CHARGES VERSUS V GS 336 7.4.9 USE
OF CHARGES IN EVALUATING TERMINAL CURRENTS 337 7.5 TRANSIT TIME UNDER DC
CONDITIONS 339 7.6 LIMITATIONS OF THE QUASI-STATIC MODEL 340 7.7
NON-QUASI-STATIC MODELING 347 7.7.1 INTRODUCTION 347 7.7.2 THE
CONTINUITY EQUATION 347 7.7.3 NON-QUASI-STATIC ANALYSIS 348 REFERENCES
354 PROBLEMS 358 CHAPTER 8 SMALL-SIGNAL MODELING FOR LOW AND MEDIUM
FREQUENCIES 359 8.1 INTRODUCTION . 359 8.2 A LOW-FREQUENCY SMALL-SIGNAL
MODEL FOR THE INTRINSIC PART 360 8.2.1 A TWO-PATH VIEW 360 8.2.2 A
SMALL-SIGNAL MODEL FOR THE CHANNEL PATH 361 8.2.3 A SMALL-SIGNAL MODEL
FOR THE DRAIN-TO-SUBSTRATE PATH 365 8.2.4 STRONG INVERSION 367 8.2.5
WEAK INVERSION 378 8.2.6 MODERATE INVERSION 380 8.2.7 GENERAL MODELS 381
8.3 A MEDIUM-FREQUENCY SMALL-SIGNAL MODEL FOR THE INTRINSIC PART 384
8.3.1 INTRODUCTION 384 8.3.2 INTRINSIC CAPACITANCES 385 CONTENTS XIX 8.4
8.5 8.6 CHAPTER 9 9.1 9.2 9.3 9.4 9.5 9.6 CHAPTER 10 10.1 10.2 10.3 10.4
10.5 10.6 10.7 10.8 10.9 SMALL-SIGNAL MODELING FOR THE EXTRINSIC PART
NOISE 8.5.1 INTRODUCTION 8.5.2 WHITE NOISE 8.5.3 FLICKER NOISE 8.5.4
SMALL-DIMENSION EFFECTS 8.5.5 EQUIVALENT-CIRCUIT MODEL GENERAL MODELS
REFERENCES PROBLEMS HIGH-FREQUENCY SMALL-SIGNAL MODELS INTRODUCTION A
COMPLETE QUASI-STATIC MODEL 9.2.1 COMPLETE DESCRIPTION OF CAPACITANCE
EFFECTS 9.2.2 SMALL-SIGNAL EQUIVALENT CIRCUIT TOPOLOGIES 9.2.3
EVALUATION OF CAPACITANCES 9.2.4 FREQUENCY REGION OF VALIDITY
J-PARAMETER MODELS NON-QUASI-STATIC MODELS 9.4.1 INTRODUCTION 9.4.2 A
NON-QUASI-STATIC STRONG-INVERSION MODEL 9.4.3 OTHER APPROXIMATIONS AND
HIGHER-ORDER MODELS 9.4.4 MODEL COMPARISON HIGH-FREQUENCY NOISE
CONSIDERATIONS IN MOSFET MODELING FOR RF APPLICATIONS REFERENCES
PROBLEMS MOSFET MODELING FOR CIRCUIT SIMULATION INTRODUCTION TYPES OF
MODELS COMBINING SEVERAL EFFECTS INTO ONE PHYSICAL MODEL PARAMETER
EXTRACTION ACCURACY PROPERTIES OF GOOD MODELS CONSIDERATIONS AND CHOICES
10.7.1 GENERAL CONSIDERATIONS 10.7.2 CONSIDERATIONS RELATED TO COMPUTER
IMPLEMENTATION BENCHMARK TESTS NONTECHNICAL CONSIDERATIONS REFERENCES
PROBLEMS 405 410 410 414 422 424 425 426 428 438 440 440 440 440 445 451
458 460 467 467 469 490 491 492 495 504 508 513 513 514 516 519 528 529
530 530 533 534 543 543 553 APPENDICES A ENERGY BANDS AND RELATED
CONCEPTS 557 B BASIC LAWS OF ELECTROSTATICS IN ONE DIMENSION 566 C
CHARGE DENSITY, ELECTRIC FIELD, AND POTENTIAL IN THE PN JUNCTION 572 D
ENERGY BAND DIAGRAMS FOR THE TWO-TERMINAL MOS STRUCTURE 574 E CHARGE
DENSITY, ELECTRIC FIELD, AND POTENTIAL IN THE TWO- TERMINAL MOS
STRUCTURE 578 F GENERAL ANALYSIS OF THE TWO-TERMINAL MOS STRUCTURE 580 G
CAREFUL DEFINITIONS FOR THE LIMITS OF MODERATE INVERSION 584 H ENERGY
BAND DIAGRAMS FOR THE THREE-TERMINAL MOS STRUCTURE 587 I GENERAL
ANALYSIS OF THE THREE-TERMINAL MOS STRUCTURE 591 J DRAIN CURRENT
FORMULATION USING QUASI-FERMI POTENTIALS 594 K RESULTS OF A DETAILED
FORMULATION FOR THE DRAIN CURRENT AND DRAIN SMALL-SIGNAL CONDUCTANCE IN
THE SATURATION REGION 598 L EVALUATION OF THE INTRINSIC TRANSIENT SOURCE
AND DRAIN CURRENTS 600 M CHARGES FOR THE ACCURATE STRONG-INVERSION MODEL
603 N QUANTITIES USED IN THE DERIVATION OF THE NON-QUASI-STATIC
Y-PARAMETER MODEL 606 INDEX 609 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Tsividis, Yannis 1946- |
| author_facet | Tsividis, Yannis 1946- |
| author_role | aut |
| author_sort | Tsividis, Yannis 1946- |
| author_variant | y t yt |
| building | Verbundindex |
| bvnumber | BV021948562 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 |
| callnumber-search | TK7871.99.M44 |
| callnumber-sort | TK 47871.99 M44 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ST 190 |
| ctrlnum | (OCoLC)39042960 (DE-599)BVBBV021948562 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Informatik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Informatik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 2. ed. |
| format | Book |
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| id | DE-604.BV021948562 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:07:32Z |
| indexdate | 2024-07-09T20:48:02Z |
| institution | BVB |
| isbn | 0070655235 0071167919 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015163712 |
| oclc_num | 39042960 |
| open_access_boolean | |
| owner | DE-706 DE-11 |
| owner_facet | DE-706 DE-11 |
| physical | XX, 620 S. graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | WCB McGraw-Hill |
| record_format | marc |
| spelling | Tsividis, Yannis 1946- Verfasser aut Operation and modeling of the MOS transistor Yannis Tsividis 2. ed. Boston [u.a.] WCB McGraw-Hill 1999 XX, 620 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 MOS-FET (DE-588)4207266-9 s 1\p DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015163712&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Tsividis, Yannis 1946- Operation and modeling of the MOS transistor Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4130209-6 (DE-588)4207266-9 |
| title | Operation and modeling of the MOS transistor |
| title_auth | Operation and modeling of the MOS transistor |
| title_exact_search | Operation and modeling of the MOS transistor |
| title_exact_search_txtP | Operation and modeling of the MOS transistor |
| title_full | Operation and modeling of the MOS transistor Yannis Tsividis |
| title_fullStr | Operation and modeling of the MOS transistor Yannis Tsividis |
| title_full_unstemmed | Operation and modeling of the MOS transistor Yannis Tsividis |
| title_short | Operation and modeling of the MOS transistor |
| title_sort | operation and modeling of the mos transistor |
| topic | Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS MOS-FET |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015163712&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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