Operation and modeling of the MOS transistor:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York [u.a.]
McGraw-Hill
1996
|
Ausgabe: | [Nachdr.] |
Schriftenreihe: | McGraw-Hill series in electrical engineering
|
Schlagworte: | |
Beschreibung: | Literaturangaben |
Beschreibung: | XX, 505 S. graph. Darst. |
ISBN: | 007065381X |
Internformat
MARC
LEADER | 00000nam a2200000zc 4500 | ||
---|---|---|---|
001 | BV021944476 | ||
003 | DE-604 | ||
005 | 20040302000000.0 | ||
007 | t | ||
008 | 990125s1996 d||| |||| 00||| eng d | ||
020 | |a 007065381X |9 0-07-065381-X | ||
035 | |a (OCoLC)633134548 | ||
035 | |a (DE-599)BVBBV021944476 | ||
040 | |a DE-604 |b ger | ||
041 | 0 | |a eng | |
049 | |a DE-706 | ||
084 | |a ST 190 |0 (DE-625)143607: |2 rvk | ||
100 | 1 | |a Tsividis, Yannis |d 1946- |e Verfasser |4 aut | |
245 | 1 | 0 | |a Operation and modeling of the MOS transistor |c Yannis P. Tsividis |
250 | |a [Nachdr.] | ||
264 | 1 | |a New York [u.a.] |b McGraw-Hill |c 1996 | |
300 | |a XX, 505 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a McGraw-Hill series in electrical engineering | |
500 | |a Literaturangaben | ||
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 1 | |8 1\p |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-015159626 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804135906484944896 |
---|---|
adam_txt | |
any_adam_object | |
any_adam_object_boolean | |
author | Tsividis, Yannis 1946- |
author_facet | Tsividis, Yannis 1946- |
author_role | aut |
author_sort | Tsividis, Yannis 1946- |
author_variant | y t yt |
building | Verbundindex |
bvnumber | BV021944476 |
classification_rvk | ST 190 |
ctrlnum | (OCoLC)633134548 (DE-599)BVBBV021944476 |
discipline | Informatik |
discipline_str_mv | Informatik |
edition | [Nachdr.] |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01226nam a2200385zc 4500</leader><controlfield tag="001">BV021944476</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040302000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">990125s1996 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">007065381X</subfield><subfield code="9">0-07-065381-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)633134548</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV021944476</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ST 190</subfield><subfield code="0">(DE-625)143607:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Tsividis, Yannis</subfield><subfield code="d">1946-</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Operation and modeling of the MOS transistor</subfield><subfield code="c">Yannis P. Tsividis</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">[Nachdr.]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York [u.a.]</subfield><subfield code="b">McGraw-Hill</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XX, 505 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">McGraw-Hill series in electrical engineering</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015159626</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV021944476 |
illustrated | Illustrated |
index_date | 2024-07-02T16:07:13Z |
indexdate | 2024-07-09T20:47:57Z |
institution | BVB |
isbn | 007065381X |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015159626 |
oclc_num | 633134548 |
open_access_boolean | |
owner | DE-706 |
owner_facet | DE-706 |
physical | XX, 505 S. graph. Darst. |
publishDate | 1996 |
publishDateSearch | 1996 |
publishDateSort | 1996 |
publisher | McGraw-Hill |
record_format | marc |
series2 | McGraw-Hill series in electrical engineering |
spelling | Tsividis, Yannis 1946- Verfasser aut Operation and modeling of the MOS transistor Yannis P. Tsividis [Nachdr.] New York [u.a.] McGraw-Hill 1996 XX, 505 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier McGraw-Hill series in electrical engineering Literaturangaben MOS (DE-588)4130209-6 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 MOS-FET (DE-588)4207266-9 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Tsividis, Yannis 1946- Operation and modeling of the MOS transistor MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
subject_GND | (DE-588)4130209-6 (DE-588)4207266-9 |
title | Operation and modeling of the MOS transistor |
title_auth | Operation and modeling of the MOS transistor |
title_exact_search | Operation and modeling of the MOS transistor |
title_exact_search_txtP | Operation and modeling of the MOS transistor |
title_full | Operation and modeling of the MOS transistor Yannis P. Tsividis |
title_fullStr | Operation and modeling of the MOS transistor Yannis P. Tsividis |
title_full_unstemmed | Operation and modeling of the MOS transistor Yannis P. Tsividis |
title_short | Operation and modeling of the MOS transistor |
title_sort | operation and modeling of the mos transistor |
topic | MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
topic_facet | MOS MOS-FET |
work_keys_str_mv | AT tsividisyannis operationandmodelingofthemostransistor |