MOSFET models for VLSI circuit simulation: theory and practice
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Wien [u.a.]
Springer
1993
|
Schriftenreihe: | Computational microelectronics
|
Schlagworte: | |
Beschreibung: | XXI, 605 S. |
ISBN: | 3211823956 0387823956 |
ISSN: | 0179-0307 |
Internformat
MARC
LEADER | 00000nam a2200000zc 4500 | ||
---|---|---|---|
001 | BV021915385 | ||
003 | DE-604 | ||
005 | 20040301000000.0 | ||
007 | t | ||
008 | 931213s1993 |||| 00||| eng d | ||
020 | |a 3211823956 |9 3-211-82395-6 | ||
020 | |a 0387823956 |9 0-387-82395-6 | ||
035 | |a (OCoLC)29356565 | ||
035 | |a (DE-599)BVBBV021915385 | ||
040 | |a DE-604 |b ger | ||
041 | 0 | |a eng | |
049 | |a DE-706 | ||
050 | 0 | |a TK7871.95 | |
082 | 0 | |a 621.3815/284/011 |2 20 | |
084 | |a ST 190 |0 (DE-625)143607: |2 rvk | ||
100 | 1 | |a Arora, Narain |e Verfasser |4 aut | |
245 | 1 | 0 | |a MOSFET models for VLSI circuit simulation |b theory and practice |
264 | 1 | |a Wien [u.a.] |b Springer |c 1993 | |
300 | |a XXI, 605 S. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Computational microelectronics |x 0179-0307 | |
650 | 7 | |a Circuits intégrés à très grande échelle - Simulation par ordinateur |2 ram | |
650 | 7 | |a Circuits intégrés à très grande échelle |2 ram | |
650 | 7 | |a MOS (électronique) |2 ram | |
650 | 7 | |a Transistors MOSFET - Modèles mathématiques |2 ram | |
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Integrated circuits |x Very large scale integration |x Computer simulation | |
650 | 4 | |a Integrated circuits |x Very large scale integration |x Mathematical models | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models | |
650 | 0 | 7 | |a Elektronische Schaltung |0 (DE-588)4113419-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Simulation |0 (DE-588)4055072-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | 1 | |a VLSI |0 (DE-588)4117388-0 |D s |
689 | 0 | 2 | |a Simulation |0 (DE-588)4055072-2 |D s |
689 | 0 | 3 | |a Elektronische Schaltung |0 (DE-588)4113419-9 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
689 | 1 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 1 | |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-015130556 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804135866444021760 |
---|---|
adam_txt | |
any_adam_object | |
any_adam_object_boolean | |
author | Arora, Narain |
author_facet | Arora, Narain |
author_role | aut |
author_sort | Arora, Narain |
author_variant | n a na |
building | Verbundindex |
bvnumber | BV021915385 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.95 |
callnumber-search | TK7871.95 |
callnumber-sort | TK 47871.95 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ST 190 |
ctrlnum | (OCoLC)29356565 (DE-599)BVBBV021915385 |
dewey-full | 621.3815/284/011 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284/011 |
dewey-search | 621.3815/284/011 |
dewey-sort | 3621.3815 3284 211 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Informatik Elektrotechnik / Elektronik / Nachrichtentechnik |
discipline_str_mv | Informatik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02096nam a2200553zc 4500</leader><controlfield tag="001">BV021915385</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040301000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">931213s1993 |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3211823956</subfield><subfield code="9">3-211-82395-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0387823956</subfield><subfield code="9">0-387-82395-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)29356565</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV021915385</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.95</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/284/011</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ST 190</subfield><subfield code="0">(DE-625)143607:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Arora, Narain</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOSFET models for VLSI circuit simulation</subfield><subfield code="b">theory and practice</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Wien [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXI, 605 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Computational microelectronics</subfield><subfield code="x">0179-0307</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Circuits intégrés à très grande échelle - Simulation par ordinateur</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Circuits intégrés à très grande échelle</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">MOS (électronique)</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Transistors MOSFET - Modèles mathématiques</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Very large scale integration</subfield><subfield code="x">Computer simulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Very large scale integration</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektronische Schaltung</subfield><subfield code="0">(DE-588)4113419-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Elektronische Schaltung</subfield><subfield code="0">(DE-588)4113419-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015130556</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV021915385 |
illustrated | Not Illustrated |
index_date | 2024-07-02T16:05:28Z |
indexdate | 2024-07-09T20:47:19Z |
institution | BVB |
isbn | 3211823956 0387823956 |
issn | 0179-0307 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015130556 |
oclc_num | 29356565 |
open_access_boolean | |
owner | DE-706 |
owner_facet | DE-706 |
physical | XXI, 605 S. |
publishDate | 1993 |
publishDateSearch | 1993 |
publishDateSort | 1993 |
publisher | Springer |
record_format | marc |
series2 | Computational microelectronics |
spelling | Arora, Narain Verfasser aut MOSFET models for VLSI circuit simulation theory and practice Wien [u.a.] Springer 1993 XXI, 605 S. txt rdacontent n rdamedia nc rdacarrier Computational microelectronics 0179-0307 Circuits intégrés à très grande échelle - Simulation par ordinateur ram Circuits intégrés à très grande échelle ram MOS (électronique) ram Transistors MOSFET - Modèles mathématiques ram Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models Elektronische Schaltung (DE-588)4113419-9 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf MOS-FET (DE-588)4207266-9 s VLSI (DE-588)4117388-0 s Simulation (DE-588)4055072-2 s Elektronische Schaltung (DE-588)4113419-9 s 1\p DE-604 DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Arora, Narain MOSFET models for VLSI circuit simulation theory and practice Circuits intégrés à très grande échelle - Simulation par ordinateur ram Circuits intégrés à très grande échelle ram MOS (électronique) ram Transistors MOSFET - Modèles mathématiques ram Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models Elektronische Schaltung (DE-588)4113419-9 gnd Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd VLSI (DE-588)4117388-0 gnd |
subject_GND | (DE-588)4113419-9 (DE-588)4055072-2 (DE-588)4207266-9 (DE-588)4117388-0 |
title | MOSFET models for VLSI circuit simulation theory and practice |
title_auth | MOSFET models for VLSI circuit simulation theory and practice |
title_exact_search | MOSFET models for VLSI circuit simulation theory and practice |
title_exact_search_txtP | MOSFET models for VLSI circuit simulation theory and practice |
title_full | MOSFET models for VLSI circuit simulation theory and practice |
title_fullStr | MOSFET models for VLSI circuit simulation theory and practice |
title_full_unstemmed | MOSFET models for VLSI circuit simulation theory and practice |
title_short | MOSFET models for VLSI circuit simulation |
title_sort | mosfet models for vlsi circuit simulation theory and practice |
title_sub | theory and practice |
topic | Circuits intégrés à très grande échelle - Simulation par ordinateur ram Circuits intégrés à très grande échelle ram MOS (électronique) ram Transistors MOSFET - Modèles mathématiques ram Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models Elektronische Schaltung (DE-588)4113419-9 gnd Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd VLSI (DE-588)4117388-0 gnd |
topic_facet | Circuits intégrés à très grande échelle - Simulation par ordinateur Circuits intégrés à très grande échelle MOS (électronique) Transistors MOSFET - Modèles mathématiques Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models Elektronische Schaltung Simulation MOS-FET VLSI |
work_keys_str_mv | AT aroranarain mosfetmodelsforvlsicircuitsimulationtheoryandpractice |