MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
McGraw-Hill
1976
|
| Ausgabe: | 1. print. |
| Schriftenreihe: | Texas Instruments electronis series
|
| Schlagworte: | |
| Beschreibung: | 228 S. Ill., graph. Darst. |
| ISBN: | 0070637512 |
Internformat
MARC
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|---|---|---|---|
| 001 | BV021901813 | ||
| 003 | DE-604 | ||
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| 007 | t | ||
| 008 | 920114s1976 ad|| |||| 00||| eng d | ||
| 020 | |a 0070637512 |9 0-07-063751-2 | ||
| 035 | |a (OCoLC)2425346 | ||
| 035 | |a (DE-599)BVBBV021901813 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-706 | ||
| 050 | 0 | |a TK7874 | |
| 082 | 0 | |a 621.3815/3/042 | |
| 245 | 1 | 0 | |a MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |c ed. by Bryan Norris |
| 250 | |a 1. print. | ||
| 264 | 1 | |a New York [u.a.] |b McGraw-Hill |c 1976 | |
| 300 | |a 228 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Texas Instruments electronis series | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Integrated circuits | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 0 | 7 | |a Leistungstransistor |0 (DE-588)4167310-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Hochfrequenztransistor |0 (DE-588)4123385-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bipolarschaltung |0 (DE-588)4145667-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-Schaltung |0 (DE-588)4135571-4 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Hochfrequenztransistor |0 (DE-588)4123385-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a MOS-Schaltung |0 (DE-588)4135571-4 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Bipolarschaltung |0 (DE-588)4145667-1 |D s |
| 689 | 3 | |5 DE-604 | |
| 689 | 4 | 0 | |a Leistungstransistor |0 (DE-588)4167310-4 |D s |
| 689 | 4 | |5 DE-604 | |
| 700 | 1 | |a Norris, Bryan |e Sonstige |4 oth | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-015116994 | ||
Datensatz im Suchindex
| _version_ | 1804135848441020416 |
|---|---|
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| any_adam_object | |
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| building | Verbundindex |
| bvnumber | BV021901813 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874 |
| callnumber-search | TK7874 |
| callnumber-sort | TK 47874 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)2425346 (DE-599)BVBBV021901813 |
| dewey-full | 621.3815/3/042 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/3/042 |
| dewey-search | 621.3815/3/042 |
| dewey-sort | 3621.3815 13 242 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. print. |
| format | Book |
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| id | DE-604.BV021901813 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:04:43Z |
| indexdate | 2024-07-09T20:47:01Z |
| institution | BVB |
| isbn | 0070637512 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015116994 |
| oclc_num | 2425346 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | 228 S. Ill., graph. Darst. |
| publishDate | 1976 |
| publishDateSearch | 1976 |
| publishDateSort | 1976 |
| publisher | McGraw-Hill |
| record_format | marc |
| series2 | Texas Instruments electronis series |
| spelling | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design ed. by Bryan Norris 1. print. New York [u.a.] McGraw-Hill 1976 228 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Texas Instruments electronis series Field-effect transistors Integrated circuits Metal oxide semiconductors Leistungstransistor (DE-588)4167310-4 gnd rswk-swf Hochfrequenztransistor (DE-588)4123385-2 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Bipolarschaltung (DE-588)4145667-1 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 gnd rswk-swf Hochfrequenztransistor (DE-588)4123385-2 s DE-604 Feldeffekttransistor (DE-588)4131472-4 s MOS-Schaltung (DE-588)4135571-4 s Bipolarschaltung (DE-588)4145667-1 s Leistungstransistor (DE-588)4167310-4 s Norris, Bryan Sonstige oth |
| spellingShingle | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design Field-effect transistors Integrated circuits Metal oxide semiconductors Leistungstransistor (DE-588)4167310-4 gnd Hochfrequenztransistor (DE-588)4123385-2 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Bipolarschaltung (DE-588)4145667-1 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
| subject_GND | (DE-588)4167310-4 (DE-588)4123385-2 (DE-588)4131472-4 (DE-588)4145667-1 (DE-588)4135571-4 |
| title | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_auth | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_exact_search | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_exact_search_txtP | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_full | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design ed. by Bryan Norris |
| title_fullStr | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design ed. by Bryan Norris |
| title_full_unstemmed | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design ed. by Bryan Norris |
| title_short | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_sort | mos and special purpose bipolar integrated circuits and r f power transistor circuit design |
| topic | Field-effect transistors Integrated circuits Metal oxide semiconductors Leistungstransistor (DE-588)4167310-4 gnd Hochfrequenztransistor (DE-588)4123385-2 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Bipolarschaltung (DE-588)4145667-1 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
| topic_facet | Field-effect transistors Integrated circuits Metal oxide semiconductors Leistungstransistor Hochfrequenztransistor Feldeffekttransistor Bipolarschaltung MOS-Schaltung |
| work_keys_str_mv | AT norrisbryan mosandspecialpurposebipolarintegratedcircuitsandrfpowertransistorcircuitdesign |