Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
1990
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| Schlagworte: | |
| Beschreibung: | München, Techn. Univ., Diss., 1990 |
| Beschreibung: | 121 S. graph. Darst. |
Internformat
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Datensatz im Suchindex
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| author | Humer-Hager, Thomas |
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| id | DE-604.BV021895223 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:04:20Z |
| indexdate | 2024-07-09T20:46:53Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015110409 |
| oclc_num | 634668402 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | 121 S. graph. Darst. |
| publishDate | 1990 |
| publishDateSearch | 1990 |
| publishDateSort | 1990 |
| record_format | marc |
| spelling | Humer-Hager, Thomas Verfasser aut Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren 1990 121 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1990 Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Aluminium (DE-588)4001573-7 gnd rswk-swf Photolumineszenz (DE-588)4174517-6 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Heteroübergang (DE-588)4127243-2 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Aluminium (DE-588)4001573-7 s DE-604 Galliumarsenid (DE-588)4019155-2 s Heteroübergang (DE-588)4127243-2 s Bipolartransistor (DE-588)4145669-5 s Epitaxie (DE-588)4152545-0 s Photolumineszenz (DE-588)4174517-6 s |
| spellingShingle | Humer-Hager, Thomas Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren Bipolartransistor (DE-588)4145669-5 gnd Aluminium (DE-588)4001573-7 gnd Photolumineszenz (DE-588)4174517-6 gnd Galliumarsenid (DE-588)4019155-2 gnd Heteroübergang (DE-588)4127243-2 gnd Epitaxie (DE-588)4152545-0 gnd |
| subject_GND | (DE-588)4145669-5 (DE-588)4001573-7 (DE-588)4174517-6 (DE-588)4019155-2 (DE-588)4127243-2 (DE-588)4152545-0 |
| title | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_auth | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_exact_search | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_exact_search_txtP | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_full | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_fullStr | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_full_unstemmed | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_short | Untersuchung der Photolumineszenz von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_sort | untersuchung der photolumineszenz von gaas algaas heteroschichtfolgen fur heterobipolartransistoren |
| topic | Bipolartransistor (DE-588)4145669-5 gnd Aluminium (DE-588)4001573-7 gnd Photolumineszenz (DE-588)4174517-6 gnd Galliumarsenid (DE-588)4019155-2 gnd Heteroübergang (DE-588)4127243-2 gnd Epitaxie (DE-588)4152545-0 gnd |
| topic_facet | Bipolartransistor Aluminium Photolumineszenz Galliumarsenid Heteroübergang Epitaxie |
| work_keys_str_mv | AT humerhagerthomas untersuchungderphotolumineszenzvongaasalgaasheteroschichtfolgenfurheterobipolartransistoren |