GaAs MESFET circuit design:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Boston [u.a.]
Artech House
1988
|
Ausgabe: | 1. print. |
Schriftenreihe: | The Artech House materials science library
|
Schlagworte: | |
Beschreibung: | XVI, 584 S. Ill., graph. Darst. |
ISBN: | 0890062676 |
Internformat
MARC
LEADER | 00000nam a2200000zc 4500 | ||
---|---|---|---|
001 | BV021886101 | ||
003 | DE-604 | ||
005 | 20040301000000.0 | ||
007 | t | ||
008 | 890905s1988 ad|| |||| 00||| eng d | ||
020 | |a 0890062676 |9 0-89006-267-6 | ||
035 | |a (OCoLC)16710161 | ||
035 | |a (DE-599)BVBBV021886101 | ||
040 | |a DE-604 |b ger | ||
041 | 0 | |a eng | |
049 | |a DE-706 | ||
050 | 0 | |a TK7867 | |
082 | 0 | |a 621.3815/3 |2 19 | |
245 | 1 | 0 | |a GaAs MESFET circuit design |c ed. by Robert Soares |
250 | |a 1. print. | ||
264 | 1 | |a Boston [u.a.] |b Artech House |c 1988 | |
300 | |a XVI, 584 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a The Artech House materials science library | |
650 | 4 | |a Datenverarbeitung | |
650 | 4 | |a Electronic circuit design |x Data processing | |
650 | 4 | |a Gallium arsenide semiconductors | |
650 | 4 | |a Metal semiconductor field-effect transistors | |
650 | 0 | 7 | |a Galliumarsenid-Feldeffekttransistor |0 (DE-588)4155864-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MES-FET |0 (DE-588)4120727-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Galliumarsenid-MES-FET |0 (DE-588)4155868-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MES-FET |0 (DE-588)4120727-0 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Galliumarsenid-Feldeffekttransistor |0 (DE-588)4155864-9 |D s |
689 | 1 | |5 DE-604 | |
689 | 2 | 0 | |a Galliumarsenid-MES-FET |0 (DE-588)4155868-6 |D s |
689 | 2 | 1 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |D s |
689 | 2 | |8 1\p |5 DE-604 | |
700 | 1 | |a Soares, Robert |e Sonstige |4 oth | |
999 | |a oai:aleph.bib-bvb.de:BVB01-015101353 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
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---|---|
adam_txt | |
any_adam_object | |
any_adam_object_boolean | |
building | Verbundindex |
bvnumber | BV021886101 |
callnumber-first | T - Technology |
callnumber-label | TK7867 |
callnumber-raw | TK7867 |
callnumber-search | TK7867 |
callnumber-sort | TK 47867 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
ctrlnum | (OCoLC)16710161 (DE-599)BVBBV021886101 |
dewey-full | 621.3815/3 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/3 |
dewey-search | 621.3815/3 |
dewey-sort | 3621.3815 13 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | 1. print. |
format | Book |
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id | DE-604.BV021886101 |
illustrated | Illustrated |
index_date | 2024-07-02T16:03:58Z |
indexdate | 2024-07-09T20:46:42Z |
institution | BVB |
isbn | 0890062676 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015101353 |
oclc_num | 16710161 |
open_access_boolean | |
owner | DE-706 |
owner_facet | DE-706 |
physical | XVI, 584 S. Ill., graph. Darst. |
publishDate | 1988 |
publishDateSearch | 1988 |
publishDateSort | 1988 |
publisher | Artech House |
record_format | marc |
series2 | The Artech House materials science library |
spelling | GaAs MESFET circuit design ed. by Robert Soares 1. print. Boston [u.a.] Artech House 1988 XVI, 584 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Artech House materials science library Datenverarbeitung Electronic circuit design Data processing Gallium arsenide semiconductors Metal semiconductor field-effect transistors Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd rswk-swf MES-FET (DE-588)4120727-0 gnd rswk-swf Galliumarsenid-MES-FET (DE-588)4155868-6 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf MES-FET (DE-588)4120727-0 s DE-604 Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 s Galliumarsenid-MES-FET (DE-588)4155868-6 s Halbleiterschaltung (DE-588)4158811-3 s 1\p DE-604 Soares, Robert Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | GaAs MESFET circuit design Datenverarbeitung Electronic circuit design Data processing Gallium arsenide semiconductors Metal semiconductor field-effect transistors Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd MES-FET (DE-588)4120727-0 gnd Galliumarsenid-MES-FET (DE-588)4155868-6 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
subject_GND | (DE-588)4155864-9 (DE-588)4120727-0 (DE-588)4155868-6 (DE-588)4158811-3 |
title | GaAs MESFET circuit design |
title_auth | GaAs MESFET circuit design |
title_exact_search | GaAs MESFET circuit design |
title_exact_search_txtP | GaAs MESFET circuit design |
title_full | GaAs MESFET circuit design ed. by Robert Soares |
title_fullStr | GaAs MESFET circuit design ed. by Robert Soares |
title_full_unstemmed | GaAs MESFET circuit design ed. by Robert Soares |
title_short | GaAs MESFET circuit design |
title_sort | gaas mesfet circuit design |
topic | Datenverarbeitung Electronic circuit design Data processing Gallium arsenide semiconductors Metal semiconductor field-effect transistors Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd MES-FET (DE-588)4120727-0 gnd Galliumarsenid-MES-FET (DE-588)4155868-6 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
topic_facet | Datenverarbeitung Electronic circuit design Data processing Gallium arsenide semiconductors Metal semiconductor field-effect transistors Galliumarsenid-Feldeffekttransistor MES-FET Galliumarsenid-MES-FET Halbleiterschaltung |
work_keys_str_mv | AT soaresrobert gaasmesfetcircuitdesign |