Effects of light on the charge state of InSb-MOS devices:
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Cambridge, Mass.
Mass. Inst. of Technology, Lincoln Laboratory
1969
|
| Schlagworte: | |
| Beschreibung: | Kopie, erschienen bei Clearinghouse for Federal Scientific & Techn. Information, Springfield, Va. - Aus: Journal of Applied Physics. 40, 1969 |
| Beschreibung: | S. 3662-3667 |
Internformat
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| 100 | 1 | |a Krag, William E. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Effects of light on the charge state of InSb-MOS devices |c W.E. Krag ; R.J. Phellan and J.O. Dimmock |
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| 650 | 0 | 7 | |a MOS-Schaltung |0 (DE-588)4135571-4 |2 gnd |9 rswk-swf |
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| 700 | 1 | |a Phelan, Robert J. |e Verfasser |4 aut | |
| 700 | 1 | |a Dimmock, John O. |e Verfasser |4 aut | |
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Datensatz im Suchindex
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| author | Krag, William E. Phelan, Robert J. Dimmock, John O. |
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| illustrated | Not Illustrated |
| index_date | 2024-07-02T16:03:42Z |
| indexdate | 2024-07-09T20:46:34Z |
| institution | BVB |
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| publishDate | 1969 |
| publishDateSearch | 1969 |
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| publisher | Mass. Inst. of Technology, Lincoln Laboratory |
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| spelling | Krag, William E. Verfasser aut Effects of light on the charge state of InSb-MOS devices W.E. Krag ; R.J. Phellan and J.O. Dimmock Cambridge, Mass. Mass. Inst. of Technology, Lincoln Laboratory 1969 S. 3662-3667 txt rdacontent n rdamedia nc rdacarrier Kopie, erschienen bei Clearinghouse for Federal Scientific & Techn. Information, Springfield, Va. - Aus: Journal of Applied Physics. 40, 1969 MOS-Schaltung (DE-588)4135571-4 gnd rswk-swf Fotoeffekt (DE-588)4174487-1 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 s DE-604 Fotoeffekt (DE-588)4174487-1 s Phelan, Robert J. Verfasser aut Dimmock, John O. Verfasser aut |
| spellingShingle | Krag, William E. Phelan, Robert J. Dimmock, John O. Effects of light on the charge state of InSb-MOS devices MOS-Schaltung (DE-588)4135571-4 gnd Fotoeffekt (DE-588)4174487-1 gnd |
| subject_GND | (DE-588)4135571-4 (DE-588)4174487-1 |
| title | Effects of light on the charge state of InSb-MOS devices |
| title_auth | Effects of light on the charge state of InSb-MOS devices |
| title_exact_search | Effects of light on the charge state of InSb-MOS devices |
| title_exact_search_txtP | Effects of light on the charge state of InSb-MOS devices |
| title_full | Effects of light on the charge state of InSb-MOS devices W.E. Krag ; R.J. Phellan and J.O. Dimmock |
| title_fullStr | Effects of light on the charge state of InSb-MOS devices W.E. Krag ; R.J. Phellan and J.O. Dimmock |
| title_full_unstemmed | Effects of light on the charge state of InSb-MOS devices W.E. Krag ; R.J. Phellan and J.O. Dimmock |
| title_short | Effects of light on the charge state of InSb-MOS devices |
| title_sort | effects of light on the charge state of insb mos devices |
| topic | MOS-Schaltung (DE-588)4135571-4 gnd Fotoeffekt (DE-588)4174487-1 gnd |
| topic_facet | MOS-Schaltung Fotoeffekt |
| work_keys_str_mv | AT kragwilliame effectsoflightonthechargestateofinsbmosdevices AT phelanrobertj effectsoflightonthechargestateofinsbmosdevices AT dimmockjohno effectsoflightonthechargestateofinsbmosdevices |