GaAs FET principles and technology:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Dedham, Mass.
Artech House
1982
|
| Schlagworte: | |
| Beschreibung: | 773 S. Ill. |
| ISBN: | 0890061181 |
Internformat
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| 245 | 1 | 0 | |a GaAs FET principles and technology |c James V. DiLorenzo, ed.in chief |
| 264 | 1 | |a Dedham, Mass. |b Artech House |c 1982 | |
| 300 | |a 773 S. |b Ill. | ||
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| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Gallium arsenide semiconductors | |
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| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Dilorenzo, James V. |e Sonstige |4 oth | |
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Datensatz im Suchindex
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| dewey-full | 621.3815/284 |
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| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV021878091 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:03:39Z |
| indexdate | 2024-07-09T20:46:32Z |
| institution | BVB |
| isbn | 0890061181 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015093619 |
| oclc_num | 8546565 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | 773 S. Ill. |
| publishDate | 1982 |
| publishDateSearch | 1982 |
| publishDateSort | 1982 |
| publisher | Artech House |
| record_format | marc |
| spelling | GaAs FET principles and technology James V. DiLorenzo, ed.in chief Dedham, Mass. Artech House 1982 773 S. Ill. txt rdacontent n rdamedia nc rdacarrier Field-effect transistors Gallium arsenide semiconductors Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd rswk-swf Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 s DE-604 Dilorenzo, James V. Sonstige oth |
| spellingShingle | GaAs FET principles and technology Field-effect transistors Gallium arsenide semiconductors Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd |
| subject_GND | (DE-588)4155864-9 |
| title | GaAs FET principles and technology |
| title_auth | GaAs FET principles and technology |
| title_exact_search | GaAs FET principles and technology |
| title_exact_search_txtP | GaAs FET principles and technology |
| title_full | GaAs FET principles and technology James V. DiLorenzo, ed.in chief |
| title_fullStr | GaAs FET principles and technology James V. DiLorenzo, ed.in chief |
| title_full_unstemmed | GaAs FET principles and technology James V. DiLorenzo, ed.in chief |
| title_short | GaAs FET principles and technology |
| title_sort | gaas fet principles and technology |
| topic | Field-effect transistors Gallium arsenide semiconductors Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd |
| topic_facet | Field-effect transistors Gallium arsenide semiconductors Galliumarsenid-Feldeffekttransistor |
| work_keys_str_mv | AT dilorenzojamesv gaasfetprinciplesandtechnology |