Transistors: fundamentals for the integrated-circuit engineer
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Wiley
c 1983
|
| Ausgabe: | 2. printing |
| Schriftenreihe: | A Wiley-Interscience publication
|
| Schlagworte: | |
| Beschreibung: | XIX, 875 S. |
| ISBN: | 0471092088 |
Internformat
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Datensatz im Suchindex
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| author | Warner, Raymond M. Grung, B. L. |
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| bvnumber | BV021870659 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
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| callnumber-search | TK7871.96.B55 |
| callnumber-sort | TK 47871.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4850 |
| ctrlnum | (OCoLC)9645032 (DE-599)BVBBV021870659 |
| dewey-full | 621.3815/28 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/28 |
| dewey-search | 621.3815/28 |
| dewey-sort | 3621.3815 228 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 2. printing |
| format | Book |
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| id | DE-604.BV021870659 |
| illustrated | Not Illustrated |
| index_date | 2024-07-02T16:03:23Z |
| indexdate | 2024-07-09T20:46:24Z |
| institution | BVB |
| isbn | 0471092088 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015086573 |
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| physical | XIX, 875 S. |
| publishDate | 1983 |
| publishDateSearch | 1983 |
| publishDateSort | 1983 |
| publisher | Wiley |
| record_format | marc |
| series2 | A Wiley-Interscience publication |
| spelling | Warner, Raymond M. Verfasser aut Transistors fundamentals for the integrated-circuit engineer 2. printing New York [u.a.] Wiley c 1983 XIX, 875 S. txt rdacontent n rdamedia nc rdacarrier A Wiley-Interscience publication Bipolar transistors Metal oxide semiconductor field-effect transistors Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Transistor (DE-588)4060646-6 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s Transistor (DE-588)4060646-6 s 1\p DE-604 Grung, B. L. Verfasser aut 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Warner, Raymond M. Grung, B. L. Transistors fundamentals for the integrated-circuit engineer Bipolar transistors Metal oxide semiconductor field-effect transistors Halbleiterphysik (DE-588)4113829-6 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Transistor (DE-588)4060646-6 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4027242-4 (DE-588)4060646-6 |
| title | Transistors fundamentals for the integrated-circuit engineer |
| title_auth | Transistors fundamentals for the integrated-circuit engineer |
| title_exact_search | Transistors fundamentals for the integrated-circuit engineer |
| title_exact_search_txtP | Transistors fundamentals for the integrated-circuit engineer |
| title_full | Transistors fundamentals for the integrated-circuit engineer |
| title_fullStr | Transistors fundamentals for the integrated-circuit engineer |
| title_full_unstemmed | Transistors fundamentals for the integrated-circuit engineer |
| title_short | Transistors |
| title_sort | transistors fundamentals for the integrated circuit engineer |
| title_sub | fundamentals for the integrated-circuit engineer |
| topic | Bipolar transistors Metal oxide semiconductor field-effect transistors Halbleiterphysik (DE-588)4113829-6 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Transistor (DE-588)4060646-6 gnd |
| topic_facet | Bipolar transistors Metal oxide semiconductor field-effect transistors Halbleiterphysik Integrierte Schaltung Transistor |
| work_keys_str_mv | AT warnerraymondm transistorsfundamentalsfortheintegratedcircuitengineer AT grungbl transistorsfundamentalsfortheintegratedcircuitengineer |