Field effect in semiconductor-electrolyte interfaces: application to investigations of electronic properties of semiconductor surfaces
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Princeton, NJ [u.a.]
Princeton
2006
|
| Schlagworte: | |
| Online-Zugang: | Contributor biographical information Publisher description Inhaltsverzeichnis |
| Beschreibung: | Includes bibliographical references and index Erscheint: Oktober 2006 |
| Beschreibung: | XVIII, 176 S. graph. Darst. |
| ISBN: | 0691121761 9780691121765 |
Internformat
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| 100 | 1 | |a Konorov, Pavel P. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Field effect in semiconductor-electrolyte interfaces |b application to investigations of electronic properties of semiconductor surfaces |c Pavel P. Konorov, Adil M. Yafyasov, and Vladislav B. Bogevolnov |
| 264 | 1 | |a Princeton, NJ [u.a.] |b Princeton |c 2006 | |
| 300 | |a XVIII, 176 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 500 | |a Includes bibliographical references and index | ||
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Datensatz im Suchindex
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| adam_text | FIELD EFFECT IN SEMICONDUCTOR-ELECTROLYTE INTERFACES APPLICATION TO
INVESTIGATIONS OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR SURFACES PAVEL
P. K0N0R0V, ADIL M. YAFYASOV, AND VLADISLAV B. BOGEVOLNOV PRINCETON
UNIVERSITY PRESS PRINCETON AND OXFORD -* CONTENTS PREFACE VII
ABBREVIATIONS XI INTRODUCTION XIII CHAPTER ONE SEMICONDUCTOR-ELECTROLYTE
INTERFACE: BASIC NOTIONS AND DEFINITIONS 1 CHAPTER TWO
SEMICONDUCTOR-ELECTROLYTE INTERFACE UNDER POLARIZATION: VOLTAGE-CURRENT
RELATIONSHIPS (POLARIZATION CHARACTERISTICS) 7 CHAPTER THREE
QUASI-EQUILIBRIUM FIELD EFFECT IN SEMICONDUCTOR-ELECTROLYTE INTERFACES:
STUDIES OF SURFACE STATES 15 3.1 QUASI-EQUILIBRIUM FESE 15 3.2 SURFACE
STATES INDUCED BY GERMANIUM SURFACE OXIDATION 25 3.3 SURFACE STATES
ARISING ON GERMANIUM BY METAL ADSORPTION 27 CHAPTER FOUR FIELD EFFECT IN
SEMICONDUCTOR-ELECTROLYTE INTERFACES ON NONEQUILIBRIUM DEPLETION OF FREE
CHARGE CARRIERS FROM SEMICONDUCTOR 30 CHAPTER FIVE APPLICATION OF FIELD
EFFECT IN SEMICONDUCTOR-ELECTROLYTE INTERFACES FOR STUDIES OF SURFACE
CHARGE LAYER CHARACTERISTICS OF SEMICONDUCTORS AND SEMIMETALS 37 5.1
WIDE-GAP SEMICONDUCTORS 38 5.2 NARROW-GAP SEMICONDUCTORS 45 5.3 ZERO-GAP
SEMICONDUCTORS AND SEMIMETALS 70 5.4 FESE TECHNIQUE AS APPLIED TO
STUDIES OF SURFACES OF METAL ELECTRODES AND HTSC MATERIALS 82 V CONTENTS
CHAPTER SIX PROCESSES OF SPATIAL AND TEMPORAL SELF-ORGANIZATION IN THE
SEMICONDUCTOR-ELECTROLYTE SYSTEM AND THEIR MANIFESTATION IN THE FIELD
EFFECT 88 6.1 PROCESSES UNDER POLARIZATION 88 6.2 PROCESSES UNDER
ADSORPTION 94 6.3 QUASI-PERIODIC OSCILLATIONS IN THE CARBON
FIBER-ELECTROLYTE SYSTEM 101 6.4 BELOUSOV-ZHABOTINSKY REACTION 105
CHAPTER SEVEN SIZE QUANTIZATION IN THE SEMICONDUCTOR-ELECTROLYTE SYSTEM
109 7.1 TWO-DIMENSIONAL QUANTUM SYSTEMS: THEORY 109 7.2 TWO-DIMENSIONAL
SIZE QUANTIZATION IN SEMICONDUCTOR-ELECTROLYTE INTERFACES AND ITS
MANIFESTATION IN FESE EXPERIMENTS 114 7.3 ONE-DIMENSIONAL QUANTUM
SYSTEM: THEORY 119 7.4 FABRICATION OF LOW-DIMENSIONAL QUANTUM STRUCTURES
AND THEIR ELECTRONIC PROPERTIES 121 CHAPTER EIGHT TECHNIQUE OF FESE
METHOD AND SOME POSSIBILITIES FOR ITS TECHNOLOGICAL APPLICATIONS 136 8.1
TECHNIQUE OF QUASI-EQUILIBRIUM FESE METHOD 136 8.2 APPLICATION OF FESE
FOR CONTROL OF THE IMPURITY DISTRIBUTION IN SEMICONDUCTORS 140 8.3
METHOD FOR DETERMINING THE STOICHIOMETRIC COMPOSITION OF SOLID SOLUTIONS
141 8.4 FESE TECHNIQUE FOR INVESTIGATION AND CONTROL OF BIOLOGICAL
SYSTEMS 147 CONCLUSION 153 BIBLIOGRAPHY 155 INDEX 175 VI
|
| adam_txt |
FIELD EFFECT IN SEMICONDUCTOR-ELECTROLYTE INTERFACES APPLICATION TO
INVESTIGATIONS OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR SURFACES PAVEL
P. K0N0R0V, ADIL M. YAFYASOV, AND VLADISLAV B. BOGEVOLNOV PRINCETON
UNIVERSITY PRESS PRINCETON AND OXFORD -* CONTENTS PREFACE VII
ABBREVIATIONS XI INTRODUCTION XIII CHAPTER ONE SEMICONDUCTOR-ELECTROLYTE
INTERFACE: BASIC NOTIONS AND DEFINITIONS 1 CHAPTER TWO
SEMICONDUCTOR-ELECTROLYTE INTERFACE UNDER POLARIZATION: VOLTAGE-CURRENT
RELATIONSHIPS (POLARIZATION CHARACTERISTICS) 7 CHAPTER THREE
QUASI-EQUILIBRIUM FIELD EFFECT IN SEMICONDUCTOR-ELECTROLYTE INTERFACES:
STUDIES OF SURFACE STATES 15 3.1 QUASI-EQUILIBRIUM FESE 15 3.2 SURFACE
STATES INDUCED BY GERMANIUM SURFACE OXIDATION 25 3.3 SURFACE STATES
ARISING ON GERMANIUM BY METAL ADSORPTION 27 CHAPTER FOUR FIELD EFFECT IN
SEMICONDUCTOR-ELECTROLYTE INTERFACES ON NONEQUILIBRIUM DEPLETION OF FREE
CHARGE CARRIERS FROM SEMICONDUCTOR 30 CHAPTER FIVE APPLICATION OF FIELD
EFFECT IN SEMICONDUCTOR-ELECTROLYTE INTERFACES FOR STUDIES OF SURFACE
CHARGE LAYER CHARACTERISTICS OF SEMICONDUCTORS AND SEMIMETALS 37 5.1
WIDE-GAP SEMICONDUCTORS 38 5.2 NARROW-GAP SEMICONDUCTORS 45 5.3 ZERO-GAP
SEMICONDUCTORS AND SEMIMETALS 70 5.4 FESE TECHNIQUE AS APPLIED TO
STUDIES OF SURFACES OF METAL ELECTRODES AND HTSC MATERIALS 82 V CONTENTS
CHAPTER SIX PROCESSES OF SPATIAL AND TEMPORAL SELF-ORGANIZATION IN THE
SEMICONDUCTOR-ELECTROLYTE SYSTEM AND THEIR MANIFESTATION IN THE FIELD
EFFECT 88 6.1 PROCESSES UNDER POLARIZATION 88 6.2 PROCESSES UNDER
ADSORPTION 94 6.3 QUASI-PERIODIC OSCILLATIONS IN THE CARBON
FIBER-ELECTROLYTE SYSTEM 101 6.4 BELOUSOV-ZHABOTINSKY REACTION 105
CHAPTER SEVEN SIZE QUANTIZATION IN THE SEMICONDUCTOR-ELECTROLYTE SYSTEM
109 7.1 TWO-DIMENSIONAL QUANTUM SYSTEMS: THEORY 109 7.2 TWO-DIMENSIONAL
SIZE QUANTIZATION IN SEMICONDUCTOR-ELECTROLYTE INTERFACES AND ITS
MANIFESTATION IN FESE EXPERIMENTS 114 7.3 ONE-DIMENSIONAL QUANTUM
SYSTEM: THEORY 119 7.4 FABRICATION OF LOW-DIMENSIONAL QUANTUM STRUCTURES
AND THEIR ELECTRONIC PROPERTIES 121 CHAPTER EIGHT TECHNIQUE OF FESE
METHOD AND SOME POSSIBILITIES FOR ITS TECHNOLOGICAL APPLICATIONS 136 8.1
TECHNIQUE OF QUASI-EQUILIBRIUM FESE METHOD 136 8.2 APPLICATION OF FESE
FOR CONTROL OF THE IMPURITY DISTRIBUTION IN SEMICONDUCTORS 140 8.3
METHOD FOR DETERMINING THE STOICHIOMETRIC COMPOSITION OF SOLID SOLUTIONS
141 8.4 FESE TECHNIQUE FOR INVESTIGATION AND CONTROL OF BIOLOGICAL
SYSTEMS 147 CONCLUSION 153 BIBLIOGRAPHY 155 INDEX 175 VI |
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| spelling | Konorov, Pavel P. Verfasser aut Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces Pavel P. Konorov, Adil M. Yafyasov, and Vladislav B. Bogevolnov Princeton, NJ [u.a.] Princeton 2006 XVIII, 176 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Erscheint: Oktober 2006 Semiconductors Junctions Electrochemical analysis Halbleiter (DE-588)4022993-2 gnd rswk-swf Elektrolyt (DE-588)4151826-3 gnd rswk-swf Grenzfläche (DE-588)4021991-4 gnd rswk-swf Feldeffekt (DE-588)4444716-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Grenzfläche (DE-588)4021991-4 s Elektrolyt (DE-588)4151826-3 s Feldeffekt (DE-588)4444716-4 s DE-604 Yafyasov, Adil M. Verfasser aut Bogevolnov, Vladislav B. Verfasser aut http://www.loc.gov/catdir/enhancements/fy0654/2005055241-b.html Contributor biographical information http://www.loc.gov/catdir/enhancements/fy0654/2005055241-d.html Publisher description GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014963140&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Konorov, Pavel P. Yafyasov, Adil M. Bogevolnov, Vladislav B. Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces Semiconductors Junctions Electrochemical analysis Halbleiter (DE-588)4022993-2 gnd Elektrolyt (DE-588)4151826-3 gnd Grenzfläche (DE-588)4021991-4 gnd Feldeffekt (DE-588)4444716-4 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4151826-3 (DE-588)4021991-4 (DE-588)4444716-4 |
| title | Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces |
| title_auth | Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces |
| title_exact_search | Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces |
| title_exact_search_txtP | Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces |
| title_full | Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces Pavel P. Konorov, Adil M. Yafyasov, and Vladislav B. Bogevolnov |
| title_fullStr | Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces Pavel P. Konorov, Adil M. Yafyasov, and Vladislav B. Bogevolnov |
| title_full_unstemmed | Field effect in semiconductor-electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces Pavel P. Konorov, Adil M. Yafyasov, and Vladislav B. Bogevolnov |
| title_short | Field effect in semiconductor-electrolyte interfaces |
| title_sort | field effect in semiconductor electrolyte interfaces application to investigations of electronic properties of semiconductor surfaces |
| title_sub | application to investigations of electronic properties of semiconductor surfaces |
| topic | Semiconductors Junctions Electrochemical analysis Halbleiter (DE-588)4022993-2 gnd Elektrolyt (DE-588)4151826-3 gnd Grenzfläche (DE-588)4021991-4 gnd Feldeffekt (DE-588)4444716-4 gnd |
| topic_facet | Semiconductors Junctions Electrochemical analysis Halbleiter Elektrolyt Grenzfläche Feldeffekt |
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