Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2006
|
| Schriftenreihe: | Berichte aus der Halbleitertechnik
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VI, 138 S. Ill., graph. Darst. 21 cm, 218 gr. |
| ISBN: | 9783832250539 3832250530 |
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Datensatz im Suchindex
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| adam_text | IMPACT OF THE INTERFACE CAPACITY ON FAILURE MECHANISMS AND SIZE EFFECTS
IN FERROELECTRIC THIN FILMS VON DER FAKULTST FUR ELEKTROTECHNIK UND
INFORMATIONSTECHNIK DER RHEINISCH-WESTFSLISCHEN TECHNISCHEN HOCHSCHULE
AACHEN ZUR ERLANGUNG DES AKADEMISCHEN GRADES EINES DOKTORS DER
INGENIEURWISSENSCHAFTEN GENEHMIGTE DISSERTATION VON DIPLOM INGENIER
ULRICH ELLERKMANN AUS AACHEN BERICHTER: UNIV.-PROF. DR. RAINER WASER
UNIV.-PROF. DR. RER. NAT. MATTHIAS WUTTIG TAG DER MUNDLICHEN PRUFUNG:
12.07.2005 V CONTENTS 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 OBJECTIVES 3
2 FERROELECTRIC MATERIALS AND THEIR APPLICATION IN FERROELECTRIC
MEMORIES 5 2.1 FERROELECTRIC MATERIALS AND THEIR PROPERTIES 5 2.1.1
DEFINITION AND BASIC PROPERTIES OF A FERROELECTRIC ... 5 2.1.2 MATERIAL
SYSTEMS 7 2.2 FERROELECTRIC RANDOM ACCESS MEMORIES 12 2.2.1 OPERATION
PRINCIPLE 12 2.2.2 CELL STRUCTURE 13 3 FAILURE MECHANISMS AND
SIZE-EFFECT 17 3.1 FAILURE MECHANISMS 17 3.1.1 FATIGUE 17 3.1.2 IMPRINT
20 3.1.3 RETENTION 21 3.2 SIZE-EFFECTS 22 3.2.1 DECREASE OF REMANENT
POLARIZATION 23 3.2.2 INCREASE OF COERCIVE FIELD 25 3.2.3 DECREASE OF
THE PERMITTIVITY 28 3.2.4 CHANGE OF DOMAIN STRUCTURE 29 3.2.5 DECREASE
OF THE PIEZOELECTRIC COEFFICIENTS 30 3.2.6 VARIATION OF THE PHASE
TRANSITION 30 3.3 INTERFACE CAPACITY 31 VI 4 EXPERIMENTAL METHODS 40 4.1
SAMPLE PREPARATION 40 4.2 PHYSICAL CHARACTERIZATION METHODS 44 4.3
ELECTRICAL CHARACTERIZATION METHODS 48 4.3.1 HYSTERESIS MEASUREMENT 49
4.3.2 IMPRINT MEASUREMENTS 52 4.3.3 FATIGUE MEASUREMENT 53 4.3.4 SMALL
SIGNAL MEASUREMENTS 54 5 REDUCING THE FILM THICKNESS 58 5.1 STATE OF THE
ART 58 5.2 VARIATIONS FROM THE STANDARD ROUTE 59 5.2.1 DIFFERENT
DILUTIONS OF THE PRECURSOR SOLUTION 60 5.2.2 CRYSTALLIZING UNDER
DIFFERENT ATMOSPHERES: O 2 VS. N 2 65 6 RESULTS AND DISCUSSION 69 6.1
SUPPRESSION OF THE TUNABILITY 69 6.1.1 BIAS DEPENDENCE OF THE INTERFACE
CAPACITY 70 6.2 FATIGUE 88 6.3 IMPRINT 98 6.4 SCALABILITY OF THE
COERCIVE FIELD 102 7 SUMMARY AND OUTLOOK 109 7.1 SUMMARY 109 7.2 OUTLOOK
ILL REFERENCES 112
|
| adam_txt |
IMPACT OF THE INTERFACE CAPACITY ON FAILURE MECHANISMS AND SIZE EFFECTS
IN FERROELECTRIC THIN FILMS VON DER FAKULTST FUR ELEKTROTECHNIK UND
INFORMATIONSTECHNIK DER RHEINISCH-WESTFSLISCHEN TECHNISCHEN HOCHSCHULE
AACHEN ZUR ERLANGUNG DES AKADEMISCHEN GRADES EINES DOKTORS DER
INGENIEURWISSENSCHAFTEN GENEHMIGTE DISSERTATION VON DIPLOM INGENIER
ULRICH ELLERKMANN AUS AACHEN BERICHTER: UNIV.-PROF. DR. RAINER WASER
UNIV.-PROF. DR. RER. NAT. MATTHIAS WUTTIG TAG DER MUNDLICHEN PRUFUNG:
12.07.2005 V CONTENTS 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 OBJECTIVES 3
2 FERROELECTRIC MATERIALS AND THEIR APPLICATION IN FERROELECTRIC
MEMORIES 5 2.1 FERROELECTRIC MATERIALS AND THEIR PROPERTIES 5 2.1.1
DEFINITION AND BASIC PROPERTIES OF A FERROELECTRIC . 5 2.1.2 MATERIAL
SYSTEMS 7 2.2 FERROELECTRIC RANDOM ACCESS MEMORIES 12 2.2.1 OPERATION
PRINCIPLE 12 2.2.2 CELL STRUCTURE 13 3 FAILURE MECHANISMS AND
SIZE-EFFECT 17 3.1 FAILURE MECHANISMS 17 3.1.1 FATIGUE 17 3.1.2 IMPRINT
20 3.1.3 RETENTION 21 3.2 SIZE-EFFECTS 22 3.2.1 DECREASE OF REMANENT
POLARIZATION 23 3.2.2 INCREASE OF COERCIVE FIELD 25 3.2.3 DECREASE OF
THE PERMITTIVITY 28 3.2.4 CHANGE OF DOMAIN STRUCTURE 29 3.2.5 DECREASE
OF THE PIEZOELECTRIC COEFFICIENTS 30 3.2.6 VARIATION OF THE PHASE
TRANSITION 30 3.3 INTERFACE CAPACITY 31 VI 4 EXPERIMENTAL METHODS 40 4.1
SAMPLE PREPARATION 40 4.2 PHYSICAL CHARACTERIZATION METHODS 44 4.3
ELECTRICAL CHARACTERIZATION METHODS 48 4.3.1 HYSTERESIS MEASUREMENT 49
4.3.2 IMPRINT MEASUREMENTS 52 4.3.3 FATIGUE MEASUREMENT 53 4.3.4 SMALL
SIGNAL MEASUREMENTS 54 5 REDUCING THE FILM THICKNESS 58 5.1 STATE OF THE
ART 58 5.2 VARIATIONS FROM THE STANDARD ROUTE 59 5.2.1 DIFFERENT
DILUTIONS OF THE PRECURSOR SOLUTION 60 5.2.2 CRYSTALLIZING UNDER
DIFFERENT ATMOSPHERES: O 2 VS. N 2 65 6 RESULTS AND DISCUSSION 69 6.1
SUPPRESSION OF THE TUNABILITY 69 6.1.1 BIAS DEPENDENCE OF THE INTERFACE
CAPACITY 70 6.2 FATIGUE 88 6.3 IMPRINT 98 6.4 SCALABILITY OF THE
COERCIVE FIELD 102 7 SUMMARY AND OUTLOOK 109 7.1 SUMMARY 109 7.2 OUTLOOK
ILL REFERENCES 112 |
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| spelling | Ellerkmann, Ulrich 1972- Verfasser (DE-588)131653040 aut Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films Ulrich Ellerkmann Aachen Shaker 2006 VI, 138 S. Ill., graph. Darst. 21 cm, 218 gr. txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Zugl.: Aachen, Techn. Hochsch., Diss., 2005 Schichtkondensator (DE-588)4179520-9 gnd rswk-swf FRAM Informatik (DE-588)4830042-1 gnd rswk-swf Size-Effekt (DE-588)4181611-0 gnd rswk-swf PZT (DE-588)4329808-4 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf Werkstofffehler (DE-588)4122412-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content FRAM Informatik (DE-588)4830042-1 s Schichtkondensator (DE-588)4179520-9 s PZT (DE-588)4329808-4 s Ferroelektrikum (DE-588)4154121-2 s Size-Effekt (DE-588)4181611-0 s Werkstofffehler (DE-588)4122412-7 s DE-604 HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014901290&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ellerkmann, Ulrich 1972- Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films Schichtkondensator (DE-588)4179520-9 gnd FRAM Informatik (DE-588)4830042-1 gnd Size-Effekt (DE-588)4181611-0 gnd PZT (DE-588)4329808-4 gnd Ferroelektrikum (DE-588)4154121-2 gnd Werkstofffehler (DE-588)4122412-7 gnd |
| subject_GND | (DE-588)4179520-9 (DE-588)4830042-1 (DE-588)4181611-0 (DE-588)4329808-4 (DE-588)4154121-2 (DE-588)4122412-7 (DE-588)4113937-9 |
| title | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films |
| title_auth | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films |
| title_exact_search | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films |
| title_exact_search_txtP | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films |
| title_full | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films Ulrich Ellerkmann |
| title_fullStr | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films Ulrich Ellerkmann |
| title_full_unstemmed | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films Ulrich Ellerkmann |
| title_short | Impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films |
| title_sort | impact of the interface capacity on failure mechanisms and size effects in ferroelectric thin films |
| topic | Schichtkondensator (DE-588)4179520-9 gnd FRAM Informatik (DE-588)4830042-1 gnd Size-Effekt (DE-588)4181611-0 gnd PZT (DE-588)4329808-4 gnd Ferroelektrikum (DE-588)4154121-2 gnd Werkstofffehler (DE-588)4122412-7 gnd |
| topic_facet | Schichtkondensator FRAM Informatik Size-Effekt PZT Ferroelektrikum Werkstofffehler Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014901290&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT ellerkmannulrich impactoftheinterfacecapacityonfailuremechanismsandsizeeffectsinferroelectricthinfilms |