Holdings: Principles of semiconductor devices

Principles of semiconductor devices:

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Bibliographic Details
Main Author:	Dimitrijev, Sima (Author)
Format:	Book
Language:	English
Published:	New York [u.a.] Oxford Univ. Press 2006
Series:	The Oxford series in electrical and computer engineering
Subjects:	Semiconductors Halbleiterbauelement
Online Access:	Inhaltsverzeichnis
Physical Description:	XVIII, 588 S. Ill., graph. Darst.
ISBN:	0195161130 9780195161137

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LEADER	00000nam a2200000 c 4500
001	BV021500862
003	DE-604
005	20080826
007	t
008	060307s2006 ad\|\| \|\|\|\| 00\|\|\| eng d
020			\|a 0195161130 \|9 0-19-516113-0
020			\|a 9780195161137 \|9 978-0-19-516113-7
035			\|a (OCoLC)57344014
035			\|a (DE-599)BVBBV021500862
040			\|a DE-604 \|b ger \|e rakwb
041	0		\|a eng
049			\|a DE-29T \|a DE-M347 \|a DE-1050 \|a DE-20 \|a DE-634 \|a DE-83
050		0	\|a TK7871.85
082	0		\|a 621.3815/2 \|2 22
084			\|a UP 2800 \|0 (DE-625)146366: \|2 rvk
084			\|a ZN 4800 \|0 (DE-625)157408: \|2 rvk
100	1		\|a Dimitrijev, Sima \|e Verfasser \|4 aut
245	1	0	\|a Principles of semiconductor devices \|c Sima Dimitrijev
264		1	\|a New York [u.a.] \|b Oxford Univ. Press \|c 2006
300			\|a XVIII, 588 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
490	0		\|a The Oxford series in electrical and computer engineering
650		4	\|a Semiconductors
650	0	7	\|a Halbleiterbauelement \|0 (DE-588)4113826-0 \|2 gnd \|9 rswk-swf
689	0	0	\|a Halbleiterbauelement \|0 (DE-588)4113826-0 \|D s
689	0		\|5 DE-604
856	4	2	\|m HEBIS Datenaustausch Darmstadt \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014717587&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-014717587

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_version_	1804135231821709312
adam_text	PRINCIPLES OF SEMICONDUCTOR DEVICES SIMA DIMITRIJEV GRIFFITH UNIVERSITY NEW YORK * OXFORD OXFORD UNIVERSITY PRESS 2006 CONTENTS PREFACE XIII PART I INTRODUCTION TO SEMICONDUCTORS 1 SEMICONDUCTOR CRYSTALS: THE ATOMIC-BOND MODEL 3 1.1 CRYSTAL LATTICES 4 1.1.1 UNIT CELL 4 1.1.2 PLANES AND DIRECTIONS 7 1.1.3 ATOMIC BONDS 10 1.2 CURRENT CARRIERS 12 1.2.1 TWO TYPES OF CURRENT CARRIERS IN SEMICONDUCTORS 13 1.2.2 N-TYPE AND P-TYPE DOPING 15 1.2.3 ELECTRONEUTRALITY EQUATION 17 1.2.4 ELECTRON AND HOLE GENERATION AND RECOMBINATION IN THERMAL EQUILIBRIUM 18 * 1.3 BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES 21 1.3.1 CRYSTAL-GROWTH TECHNIQUES 21 1.3.2 DOPING TECHNIQUES 24 SUMMARY 26 PROBLEMS 28 REVIEW QUESTIONS 30 INDICATES AN ADVANCED SECTION THAT CAN BE OMITTED WITHOUT LOSS OF CONTINUITY. VI CONTENTS 2 QUANTUM MECHANICS AND THE ENERGY-BAND MODEL 31 2.1 ELECTRONS AS WAVES 32 2.1.1 DE BROGLIE RELATIONSHIP BETWEEN PARTICLE AND WAVE PROPERTIES 32 2.1.2 WAVE FUNCTION AND WAVE PACKET 33 2.1.3 SCHRODINGER EQUATION 38 2.2 ENERGY LEVELS IN ATOMS AND ENERGY BANDS IN CRYSTALS 45 2.2.1 ATOMIC STRUCTURE 45 2.2.2 ENERGY BANDS IN METALS 47 2.2.3 ENERGY GAP AND ENERGY BANDS IN SEMICONDUCTORS AND INSULATORS 49 2.3 ELECTRONS AND HOLES AS PARTICLES 54 2.3.1 EFFECTIVE MASS AND REAL E-K DIAGRAMS 54 2.3.2 THE QUESTION OF ELECTRON SIZE: THE UNCERTAINTY PRINCIPLE 58 2.3.3 DENSITY OF ELECTRON STATES 62 2.4 POPULATION OF ELECTRON STATES: CONCENTRATIONS OF ELECTRONS AND HOLES 66 2.4.1 FERMI-DIRAC DISTRIBUTION 67 2.4.2 MAXWELL-BOLTZMANN APPROXIMATION AND EFFECTIVE DENSITY OF STATES 72 2.4.3 FERMI POTENTIAL AND DOPING 78 2.4.4 NONEQUILIBRIUM CARRIER CONCENTRATIONS AND QUASI-FERMI LEVELS 85 SUMMARY 87 PROBLEMS 90 REVIEW QUESTIONS 94 3 DRIFT 97 3.1 ENERGY BANDS WITH APPLIED ELECTRIC FIELD 97 3.1.1 ENERGY-BAND PRESENTATION OF DRIFT CURRENT 98 3.1.2 RESISTANCE AND POWER DISSIPATION DUE TO CARRIER SCATTERING 100 3.2 OHM S LAW, SHEET RESISTANCE, AND CONDUCTIVITY 100 3.2.1 DESIGNING INTEGRATED-CIRCUIT RESISTORS 101 3.2.2 DIFFERENTIAL FORM OF OHM S LAW 107 3.2.3 CONDUCTIVITY INGREDIENTS 110 3.3 CARRIER MOBILITY 112 3.3.1 THERMAL AND DRIFT VELOCITIES 112 3.3.2 MOBILITY DEFINITION 115 3.3.3 SCATTERING TIME AND SCATTERING CROSS SECTION 116 3.3.4 MATHIESON S RULE 118 3.3.5 HALL EFFECT 123 CONTENTS VII SUMMARY 125 PROBLEMS 126 REVIEW QUESTIONS 129 4 DIFFUSION 130 4.1 DIFFUSION-CURRENT EQUATION 130 4.2 DIFFUSION COEFFICIENT 133 4.2.1 EINSTEIN RELATIONSHIP 133 4.2.2 HAYNES-SHOCKLEY EXPERIMENT 136 4.2.3 ARRHENIUS EQUATION 138 4.3 BASIC CONTINUITY EQUATION 139 SUMMARY 144 PROBLEMS 145 REVIEW QUESTIONS 146 5 GENERATION AND RECOMBINATION 148 5.1 GENERATION AND RECOMBINATION MECHANISMS 148 5.2 GENERAL FORM OF THE CONTINUITY EQUATION 151 5.2.1 RECOMBINATION AND GENERATION RATES 151 5.2.2 MINORITY-CARRIER LIFETIME 153 5.2.3 DIFFUSION LENGTH 156 5.3 GENERATION AND RECOMBINATION PHYSICS AND SHOCKLEY-READ-HALL (SRH) THEORY 157 5.3.1 CAPTURE AND EMISSION RATES IN THERMAL EQUILIBRIUM 158 5.3.2 STEADY-STATE EQUATION FOR THE EFFECTIVE THERMAL GENERATION- RECOMBINATION RATE 161 5.3.3 SPECIAL CASES 167 5.3.4 SURFACE GENERATION AND RECOMBINATION 174 SUMMARY 178 PROBLEMS 180 REVIEW QUESTIONS 182 PART II FUNDAMENTAL DEVICE STRUCTURES 6 P-N JUNCTION 187 6.1 P-N JUNCTION PRINCIPLES 187 6.1.1 P-N JUNCTION IN THERMAL EQUILIBRIUM: BUILT-IN VOLTAGE 187 6.1.2 REVERSE-BIASED P-N JUNCTION 191 VIII CONTENTS 6.1.3 FORWARD-BIASED P-N JUNCTION 193 6.1.4 BREAKDOWN PHENOMENA 195 6.2 DC MODEL 199 6.2.1 BASIC CURRENT-VOLTAGE (I-V) EQUATION 199 6.2.2 IMPORTANT SECOND-ORDER EFFECTS 207 6.2.3 TEMPERATURE EFFECTS 211 6.3 CAPACITANCE OF REVERSE-BIASED P-N JUNCTION 213 6.3.1 C-V DEPENDENCE 214 6.3.2 DEPLETION-LAYER WIDTH: SOLVING THE POISSON EQUATION 215 6.3.3 SPICE MODEL FOR THE DEPLETION-LAYER CAPACITANCE 228 6.4 STORED-CHARGE EFFECTS 228 6.4.1 STORED CHARGE AND TRANSIT TIME 228 6.4.2 RELATIONSHIP BETWEEN THE TRANSIT TIME AND THE MINORITY-CARRIER LIFETIME 229 6.4.3 SWITCHING CHARACTERISTICS: REVERSE-RECOVERY TIME 230 SUMMARY 232 PROBLEMS 235 REVIEW QUESTIONS 240 7 METAL-SEMICONDUCTOR CONTACT AND MOS CAPACITOR 242 7.1 METAL-SEMICONDUCTOR CONTACT 243 7.1.1 SCHOTTKY DIODE: RECTIFYING METAL-SEMICONDUCTOR CONTACT 243 7.1.2 OHMIC METAL-SEMICONDUCTOR CONTACTS 251 7.2 MOS CAPACITOR 252 7.2.1 PROPERTIES OF THE GATE OXIDE AND THE OXIDE-SEMICONDUCTOR INTERFACE 253 7.2.2 C-V CURVE AND THE SURFACE-POTENTIAL DEPENDENCE ON GATE VOLTAGE 257 7.2.3 ENERGY-BAND DIAGRAMS 265 7.2.4 FLAT-BAND CAPACITANCE AND DEBYE LENGTH 276 SUMMARY 279 PROBLEMS 280 REVIEW QUESTIONS 284 8 MOSFET 286 8.1 MOSFET PRINCIPLES 286 8.1.1 MOSFET STRUCTURE 286 8.1.2 MOSFET AS A VOLTAGE-CONTROLLED SWITCH 289 CONTENTS IX 8.1.3 THE THRESHOLD VOLTAGE AND THE BODY EFFECT 294 8.1.4 MOSFET AS A VOLTAGE-CONTROLLED CURRENT SOURCE: MECHANISMS OF CURRENT SATURATION 298 8.2 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS AND EQUATIONS 302 8.2.1 SPICE LEVEL 1 MODEL 303 8.2.2 SPICE LEVEL 2 MODEL 306 8.2.3 SPICE LEVEL 3 MODEL: PRINCIPAL EFFECTS 308 8.3 SECOND-ORDER EFFECTS 312 8.3.1 MOBILITY REDUCTION WITH GATE VOLTAGE 312 8.3.2 VELOCITY SATURATION (MOBILITY REDUCTION WITH DRAIN VOLTAGE) 313 8.3.3 FINITE OUTPUT RESISTANCE 314 8.3.4 THRESHOLD-VOLTAGE-RELATED SHORT-CHANNEL EFFECTS 316 8.3.5 THRESHOLD-VOLTAGE-RELATED NARROW-CHANNEL EFFECTS 318 8.3.6 SUBTHRESHOLD CURRENT 318 8.4 NANOSCALE MOSFETS 320 8.4.1 DOWN-SCALING BENEFITS AND RULES 321 8.4.2 LEAKAGE CURRENTS 323 8.4.3 ADVANCED MOSFETS 325 8.4.4 RELIABILITY ISSUES 328 8.5 MOS-BASED MEMORY DEVICES 336 8.5.1 1C1T DRAM CELL 337 8.5.2 FLASH-MEMORY CELL 338 SUMMARY 340 PROBLEMS 342 REVIEW QUESTIONS 345 9 BJT 347 9.1 BJT PRINCIPLES 347 9.1.1 BJT AS A VOLTAGE-CONTROLLED CURRENT SOURCE 348 9.1.2 BJT CURRENTS AND GAIN DEFINITIONS 351 9.1.3 DEPENDENCE OF A AND /8 CURRENT GAINS ON TECHNOLOGICAL PARAMETERS 355 9.1.4 THE FOUR MODES OF OPERATION: BJT AS A SWITCH 360 9.1.5 COMPLEMENTARY BJT 365 9.1.6 BJT VERSUS MOSFET 366 9.2 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS: EBERS-MOLL MODEL IN SPICE 368 9.2.1 INJECTION VERSION 368 9.2.2 TRANSPORT VERSION 369 9.2.3 SPICE VERSION 371 CONTENTS 9.3 SECOND-ORDER EFFECTS 375 9.3.1 EARLY EFFECT: FINITE DYNAMIC OUTPUT RESISTANCE 375 9.3.2 PARASITIC RESISTANCES 378 9.3.3 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN ON TRANSISTOR CURRENT: LOW-CURRENT EFFECTS 379 9.3.4 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN ON TRANSISTOR CURRENT: GUMMEL-POON MODEL FOR HIGH-CURRENT EFFECTS 380 9.4 HETEROJUNCTION BIPOLAR TRANSISTOR 383 SUMMARY 386 PROBLEMS 388 REVIEW QUESTIONS 391 PART 111 DEVICE TECH NOLOGY AN D ELECTRON ICS 10 INTEGRATED-CIRCUIT TECHNOLOGIES 395 10.1 A DIODE IN IC TECHNOLOGY 395 10.1.1 BASIC STRUCTURE 395 10.1.2 LITHOGRAPHY 396 10.1.3 PROCESS SEQUENCE 398 10.1.4 DIFFUSION PROFILES 400 10.2 MOSFET TECHNOLOGIES 405 10.2.1 LOCAL OXIDATION OF SILICON (LOCOS) 405 10.2.2 NMOS TECHNOLOGY 406 10.2.3 BASIC CMOS TECHNOLOGY 414 10.2.4 SILICON-ON-INSULATOR (SOI) TECHNOLOGY 422 10.3 BIPOLAR IC TECHNOLOGIES 423 10.3.1 IC STRUCTURE OF NPN BJT 423 10.3.2 STANDARD BIPOLAR TECHNOLOGY PROCESS 425 10.3.3 IMPLEMENTATION OF PNP BJTS, RESISTORS, CAPACITORS, AND DIODES 429 10.3.4 LAYER MERGING 433 10.3.5 BICMOS TECHNOLOGY 436 SUMMARY 437 PROBLEMS 438 REVIEW QUESTIONS 441 11 DEVICE ELECTRONICS: EQUIVALENT CIRCUITS AND SPICE PARAMETERS 442 11.1 DIODES 443 11.1.1 STATIC MODEL AND PARAMETERS IN SPICE 443 11.1.2 LARGE-SIGNAL EQUIVALENT CIRCUIT IN SPICE 444 CONTENTS XI 11.1.3 PARAMETER MEASUREMENT 446 11.1.4 SMALL-SIGNAL EQUIVALENT CIRCUIT 452 11.2 MOSFET 455 11.2.1 STATIC MODEL AND PARAMETERS: LEVEL 3 IN SPICE 455 11.2.2 PARAMETER MEASUREMENT 460 11.2.3 LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 468 11.2.4 SIMPLE DIGITAL MODEL 470 11.2.5 SMALL-SIGNAL EQUIVALENT CIRCUIT 476 11.3 BJT 478 11.3.1 STATIC MODEL AND PARAMETERS: EBERS-MOLL AND GUMMEL-POON LEVELS IN SPICE 478 11.3.2 PARAMETER MEASUREMENT 480 11.3.3 LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 485 11.3.4 SMALL-SIGNAL EQUIVALENT CIRCUIT 487 11.3.5 PARASITIC IC ELEMENTS NOT INCLUDED IN DEVICE MODELS 489 SUMMARY 492 PROBLEMS 493 REVIEW QUESTIONS 495 PART IV SPECIFIC DEVICES 12 PHOTONIC DEVICES 499 12.1 LIGHT-EMITTING DIODES (LED) 499 12.2 PHOTODETECTORS AND SOLAR CELLS 502 12.2.1 BIASING FOR PHOTODETECTOR AND SOLAR-CELL APPLICATIONS 502 12.2.2 CARRIER GENERATION IN PHOTODETECTORS AND SOLAR CELLS 504 12.2.3 PHOTOCURRENT EQUATION 506 12.3 LASERS 512 12.3.1 STIMULATED EMISSION, INVERSION POPULATION, AND OTHER FUNDAMENTAL CONCEPTS 512 12.3.2 A TYPICAL HETEROJUNCTION LASER 514 SUMMARY 516 PROBLEMS 517 REVIEW QUESTIONS 518 13 MICROWAVE FETS AND DIODES 520 13.1 GALLIUM ARSENIDE VERSUS SILICON 522 13.1.1 DIELECTRIC-SEMICONDUCTOR INTERFACE: ENHANCEMENT VERSUS DEPLETION FETS 522 XII CONTENTS 13.1.2 ENERGY GAP 523 13.1.3 ELECTRON MOBILITY AND SATURATION VELOCITY 524 13.1.4 NEGATIVE DYNAMIC RESISTANCE 525 13.2 JFET 525 13.2.1 JFET STRUCTURE 525 13.2.2 JFET CHARACTERISTICS 526 * 13.2.3 SPICE MODEL AND PARAMETERS 530 13.3 MESFET 533 13.3.1 MESFET STRUCTURE 533 13.3.2 MESFET CHARACTERISTICS 533 * 13.3.3 SPICE MODEL AND PARAMETERS 534 13.4 HEMT 536 13.4.1 TWO-DIMENSIONAL ELECTRON GAS (2DEG) 537 13.4.2 HEMT STRUCTURE AND CHARACTERISTICS 539 13.5 NEGATIVE RESISTANCE DIODES 540 13.5.1 AMPLIFICATION AND OSCILLATION BY NEGATIVE DYNAMIC RESISTANCE 540 13.5.2 GUNN DIODE 545 13.5.3 IMPATT DIODE 548 13.5.4 TUNNEL DIODE 549 SUMMARY 551 PROBLEMS 551 REVIEW QUESTIONS 552 14 POWER DEVICES 554 14.1 POWER DIODES 555 14.1.1 DRIFT REGION IN POWER DEVICES 555 14.1.2 SWITCHING CHARACTERISTICS 557 14.1.3 SCHOTTKY DIODE 559 14.2 POWER MOSFET 559 14.3 IGBT 562 14.4 THYRISTOR 564 SUMMARY 566 PROBLEMS 567 REVIEW QUESTIONS 568 BIBLIOGRAPHY 571 ANSWERS TO SELECTED PROBLEMS 573 INDEX 579
adam_txt	PRINCIPLES OF SEMICONDUCTOR DEVICES SIMA DIMITRIJEV GRIFFITH UNIVERSITY NEW YORK * OXFORD OXFORD UNIVERSITY PRESS 2006 CONTENTS PREFACE XIII PART I INTRODUCTION TO SEMICONDUCTORS 1 SEMICONDUCTOR CRYSTALS: THE ATOMIC-BOND MODEL 3 1.1 CRYSTAL LATTICES 4 1.1.1 UNIT CELL 4 1.1.2 PLANES AND DIRECTIONS 7 1.1.3 ATOMIC BONDS 10 1.2 CURRENT CARRIERS 12 1.2.1 TWO TYPES OF CURRENT CARRIERS IN SEMICONDUCTORS 13 1.2.2 N-TYPE AND P-TYPE DOPING 15 1.2.3 ELECTRONEUTRALITY EQUATION 17 1.2.4 ELECTRON AND HOLE GENERATION AND RECOMBINATION IN THERMAL EQUILIBRIUM 18 * 1.3 BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES 21 1.3.1 CRYSTAL-GROWTH TECHNIQUES 21 1.3.2 DOPING TECHNIQUES 24 SUMMARY 26 PROBLEMS 28 REVIEW QUESTIONS 30 'INDICATES AN ADVANCED SECTION THAT CAN BE OMITTED WITHOUT LOSS OF CONTINUITY. VI CONTENTS 2 QUANTUM MECHANICS AND THE ENERGY-BAND MODEL 31 2.1 ELECTRONS AS WAVES 32 2.1.1 DE BROGLIE RELATIONSHIP BETWEEN PARTICLE AND WAVE PROPERTIES 32 2.1.2 WAVE FUNCTION AND WAVE PACKET 33 2.1.3 SCHRODINGER EQUATION 38 2.2 ENERGY LEVELS IN ATOMS AND ENERGY BANDS IN CRYSTALS 45 2.2.1 ATOMIC STRUCTURE 45 2.2.2 ENERGY BANDS IN METALS 47 2.2.3 ENERGY GAP AND ENERGY BANDS IN SEMICONDUCTORS AND INSULATORS 49 2.3 ELECTRONS AND HOLES AS PARTICLES 54 2.3.1 EFFECTIVE MASS AND REAL E-K DIAGRAMS 54 2.3.2 THE QUESTION OF ELECTRON SIZE: THE UNCERTAINTY PRINCIPLE 58 2.3.3 DENSITY OF ELECTRON STATES 62 2.4 POPULATION OF ELECTRON STATES: CONCENTRATIONS OF ELECTRONS AND HOLES 66 2.4.1 FERMI-DIRAC DISTRIBUTION 67 2.4.2 MAXWELL-BOLTZMANN APPROXIMATION AND EFFECTIVE DENSITY OF STATES 72 2.4.3 FERMI POTENTIAL AND DOPING 78 2.4.4 NONEQUILIBRIUM CARRIER CONCENTRATIONS AND QUASI-FERMI LEVELS 85 SUMMARY 87 PROBLEMS 90 REVIEW QUESTIONS 94 3 DRIFT 97 3.1 ENERGY BANDS WITH APPLIED ELECTRIC FIELD 97 3.1.1 ENERGY-BAND PRESENTATION OF DRIFT CURRENT 98 3.1.2 RESISTANCE AND POWER DISSIPATION DUE TO CARRIER SCATTERING 100 3.2 OHM'S LAW, SHEET RESISTANCE, AND CONDUCTIVITY 100 3.2.1 DESIGNING INTEGRATED-CIRCUIT RESISTORS 101 3.2.2 DIFFERENTIAL FORM OF OHM'S LAW 107 3.2.3 CONDUCTIVITY INGREDIENTS 110 3.3 CARRIER MOBILITY 112 3.3.1 THERMAL AND DRIFT VELOCITIES 112 3.3.2 MOBILITY DEFINITION 115 3.3.3 SCATTERING TIME AND SCATTERING CROSS SECTION 116 3.3.4 MATHIESON'S RULE 118 3.3.5 HALL EFFECT 123 CONTENTS VII SUMMARY 125 PROBLEMS 126 REVIEW QUESTIONS 129 4 DIFFUSION 130 4.1 DIFFUSION-CURRENT EQUATION 130 4.2 DIFFUSION COEFFICIENT 133 4.2.1 EINSTEIN RELATIONSHIP 133 4.2.2 HAYNES-SHOCKLEY EXPERIMENT 136 4.2.3 ARRHENIUS EQUATION 138 4.3 BASIC CONTINUITY EQUATION 139 SUMMARY 144 PROBLEMS 145 REVIEW QUESTIONS 146 5 GENERATION AND RECOMBINATION 148 5.1 GENERATION AND RECOMBINATION MECHANISMS 148 5.2 GENERAL FORM OF THE CONTINUITY EQUATION 151 5.2.1 RECOMBINATION AND GENERATION RATES 151 5.2.2 MINORITY-CARRIER LIFETIME 153 5.2.3 DIFFUSION LENGTH 156 5.3 GENERATION AND RECOMBINATION PHYSICS AND SHOCKLEY-READ-HALL (SRH) THEORY 157 5.3.1 CAPTURE AND EMISSION RATES IN THERMAL EQUILIBRIUM 158 5.3.2 STEADY-STATE EQUATION FOR THE EFFECTIVE THERMAL GENERATION- RECOMBINATION RATE 161 5.3.3 SPECIAL CASES 167 5.3.4 SURFACE GENERATION AND RECOMBINATION 174 SUMMARY 178 PROBLEMS 180 REVIEW QUESTIONS 182 PART II FUNDAMENTAL DEVICE STRUCTURES 6 P-N JUNCTION 187 6.1 P-N JUNCTION PRINCIPLES 187 6.1.1 P-N JUNCTION IN THERMAL EQUILIBRIUM: BUILT-IN VOLTAGE 187 6.1.2 REVERSE-BIASED P-N JUNCTION 191 VIII CONTENTS 6.1.3 FORWARD-BIASED P-N JUNCTION 193 6.1.4 BREAKDOWN PHENOMENA 195 6.2 DC MODEL 199 6.2.1 BASIC CURRENT-VOLTAGE (I-V) EQUATION 199 6.2.2 IMPORTANT SECOND-ORDER EFFECTS 207 6.2.3 TEMPERATURE EFFECTS 211 6.3 CAPACITANCE OF REVERSE-BIASED P-N JUNCTION 213 6.3.1 C-V DEPENDENCE 214 6.3.2 DEPLETION-LAYER WIDTH: SOLVING THE POISSON EQUATION 215 6.3.3 SPICE MODEL FOR THE DEPLETION-LAYER CAPACITANCE 228 6.4 STORED-CHARGE EFFECTS 228 6.4.1 STORED CHARGE AND TRANSIT TIME 228 6.4.2 RELATIONSHIP BETWEEN THE TRANSIT TIME AND THE MINORITY-CARRIER LIFETIME 229 6.4.3 SWITCHING CHARACTERISTICS: REVERSE-RECOVERY TIME 230 SUMMARY 232 PROBLEMS 235 REVIEW QUESTIONS 240 7 METAL-SEMICONDUCTOR CONTACT AND MOS CAPACITOR 242 7.1 METAL-SEMICONDUCTOR CONTACT 243 7.1.1 SCHOTTKY DIODE: RECTIFYING METAL-SEMICONDUCTOR CONTACT 243 7.1.2 OHMIC METAL-SEMICONDUCTOR CONTACTS 251 7.2 MOS CAPACITOR 252 7.2.1 PROPERTIES OF THE GATE OXIDE AND THE OXIDE-SEMICONDUCTOR INTERFACE 253 7.2.2 C-V CURVE AND THE SURFACE-POTENTIAL DEPENDENCE ON GATE VOLTAGE 257 7.2.3 ENERGY-BAND DIAGRAMS 265 7.2.4 FLAT-BAND CAPACITANCE AND DEBYE LENGTH 276 SUMMARY 279 PROBLEMS 280 REVIEW QUESTIONS 284 8 MOSFET 286 8.1 MOSFET PRINCIPLES 286 8.1.1 MOSFET STRUCTURE 286 8.1.2 MOSFET AS A VOLTAGE-CONTROLLED SWITCH 289 CONTENTS IX 8.1.3 THE THRESHOLD VOLTAGE AND THE BODY EFFECT 294 8.1.4 MOSFET AS A VOLTAGE-CONTROLLED CURRENT SOURCE: MECHANISMS OF CURRENT SATURATION 298 8.2 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS AND EQUATIONS 302 8.2.1 SPICE LEVEL 1 MODEL 303 8.2.2 SPICE LEVEL 2 MODEL 306 8.2.3 SPICE LEVEL 3 MODEL: PRINCIPAL EFFECTS 308 8.3 SECOND-ORDER EFFECTS 312 8.3.1 MOBILITY REDUCTION WITH GATE VOLTAGE 312 8.3.2 VELOCITY SATURATION (MOBILITY REDUCTION WITH DRAIN VOLTAGE) 313 8.3.3 FINITE OUTPUT RESISTANCE 314 8.3.4 THRESHOLD-VOLTAGE-RELATED SHORT-CHANNEL EFFECTS 316 8.3.5 THRESHOLD-VOLTAGE-RELATED NARROW-CHANNEL EFFECTS 318 8.3.6 SUBTHRESHOLD CURRENT 318 8.4 NANOSCALE MOSFETS 320 8.4.1 DOWN-SCALING BENEFITS AND RULES 321 8.4.2 LEAKAGE CURRENTS 323 8.4.3 ADVANCED MOSFETS 325 8.4.4 RELIABILITY ISSUES 328 8.5 MOS-BASED MEMORY DEVICES 336 8.5.1 1C1T DRAM CELL 337 8.5.2 FLASH-MEMORY CELL 338 SUMMARY 340 PROBLEMS 342 REVIEW QUESTIONS 345 9 BJT 347 9.1 BJT PRINCIPLES 347 9.1.1 BJT AS A VOLTAGE-CONTROLLED CURRENT SOURCE 348 9.1.2 BJT CURRENTS AND GAIN DEFINITIONS 351 9.1.3 DEPENDENCE OF A AND /8 CURRENT GAINS ON TECHNOLOGICAL PARAMETERS 355 9.1.4 THE FOUR MODES OF OPERATION: BJT AS A SWITCH 360 9.1.5 COMPLEMENTARY BJT 365 9.1.6 BJT VERSUS MOSFET 366 9.2 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS: EBERS-MOLL MODEL IN SPICE 368 9.2.1 INJECTION VERSION 368 9.2.2 TRANSPORT VERSION 369 9.2.3 SPICE VERSION 371 CONTENTS 9.3 SECOND-ORDER EFFECTS 375 9.3.1 EARLY EFFECT: FINITE DYNAMIC OUTPUT RESISTANCE 375 9.3.2 PARASITIC RESISTANCES 378 9.3.3 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN ON TRANSISTOR CURRENT: LOW-CURRENT EFFECTS 379 9.3.4 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN ON TRANSISTOR CURRENT: GUMMEL-POON MODEL FOR HIGH-CURRENT EFFECTS 380 9.4 HETEROJUNCTION BIPOLAR TRANSISTOR 383 SUMMARY 386 PROBLEMS 388 REVIEW QUESTIONS 391 PART 111 DEVICE TECH NOLOGY AN D ELECTRON ICS 10 INTEGRATED-CIRCUIT TECHNOLOGIES 395 10.1 A DIODE IN IC TECHNOLOGY 395 10.1.1 BASIC STRUCTURE 395 10.1.2 LITHOGRAPHY 396 10.1.3 PROCESS SEQUENCE 398 10.1.4 DIFFUSION PROFILES 400 10.2 MOSFET TECHNOLOGIES 405 10.2.1 LOCAL OXIDATION OF SILICON (LOCOS) 405 10.2.2 NMOS TECHNOLOGY 406 10.2.3 BASIC CMOS TECHNOLOGY 414 10.2.4 SILICON-ON-INSULATOR (SOI) TECHNOLOGY 422 10.3 BIPOLAR IC TECHNOLOGIES 423 10.3.1 IC STRUCTURE OF NPN BJT 423 10.3.2 STANDARD BIPOLAR TECHNOLOGY PROCESS 425 10.3.3 IMPLEMENTATION OF PNP BJTS, RESISTORS, CAPACITORS, AND DIODES 429 10.3.4 LAYER MERGING 433 10.3.5 BICMOS TECHNOLOGY 436 SUMMARY 437 PROBLEMS 438 REVIEW QUESTIONS 441 11 DEVICE ELECTRONICS: EQUIVALENT CIRCUITS AND SPICE PARAMETERS 442 11.1 DIODES 443 11.1.1 STATIC MODEL AND PARAMETERS IN SPICE 443 11.1.2 LARGE-SIGNAL EQUIVALENT CIRCUIT IN SPICE 444 CONTENTS XI 11.1.3 PARAMETER MEASUREMENT 446 11.1.4 SMALL-SIGNAL EQUIVALENT CIRCUIT 452 11.2 MOSFET 455 11.2.1 STATIC MODEL AND PARAMETERS: LEVEL 3 IN SPICE 455 11.2.2 PARAMETER MEASUREMENT 460 11.2.3 LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 468 11.2.4 SIMPLE DIGITAL MODEL 470 11.2.5 SMALL-SIGNAL EQUIVALENT CIRCUIT 476 11.3 BJT 478 11.3.1 STATIC MODEL AND PARAMETERS: EBERS-MOLL AND GUMMEL-POON LEVELS IN SPICE 478 11.3.2 PARAMETER MEASUREMENT 480 11.3.3 LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 485 11.3.4 SMALL-SIGNAL EQUIVALENT CIRCUIT 487 11.3.5 PARASITIC IC ELEMENTS NOT INCLUDED IN DEVICE MODELS 489 SUMMARY 492 PROBLEMS 493 REVIEW QUESTIONS 495 PART IV SPECIFIC DEVICES 12 PHOTONIC DEVICES 499 12.1 LIGHT-EMITTING DIODES (LED) 499 12.2 PHOTODETECTORS AND SOLAR CELLS 502 12.2.1 BIASING FOR PHOTODETECTOR AND SOLAR-CELL APPLICATIONS 502 12.2.2 CARRIER GENERATION IN PHOTODETECTORS AND SOLAR CELLS 504 12.2.3 PHOTOCURRENT EQUATION 506 12.3 LASERS 512 12.3.1 STIMULATED EMISSION, INVERSION POPULATION, AND OTHER FUNDAMENTAL CONCEPTS 512 12.3.2 A TYPICAL HETEROJUNCTION LASER 514 SUMMARY 516 PROBLEMS 517 REVIEW QUESTIONS 518 13 MICROWAVE FETS AND DIODES 520 13.1 GALLIUM ARSENIDE VERSUS SILICON 522 13.1.1 DIELECTRIC-SEMICONDUCTOR INTERFACE: ENHANCEMENT VERSUS DEPLETION FETS 522 XII CONTENTS 13.1.2 ENERGY GAP 523 13.1.3 ELECTRON MOBILITY AND SATURATION VELOCITY 524 13.1.4 NEGATIVE DYNAMIC RESISTANCE 525 13.2 JFET 525 13.2.1 JFET STRUCTURE 525 13.2.2 JFET CHARACTERISTICS 526 * 13.2.3 SPICE MODEL AND PARAMETERS 530 13.3 MESFET 533 13.3.1 MESFET STRUCTURE 533 13.3.2 MESFET CHARACTERISTICS 533 * 13.3.3 SPICE MODEL AND PARAMETERS 534 13.4 HEMT 536 13.4.1 TWO-DIMENSIONAL ELECTRON GAS (2DEG) 537 13.4.2 HEMT STRUCTURE AND CHARACTERISTICS 539 13.5 NEGATIVE RESISTANCE DIODES 540 13.5.1 AMPLIFICATION AND OSCILLATION BY NEGATIVE DYNAMIC RESISTANCE 540 13.5.2 GUNN DIODE 545 13.5.3 IMPATT DIODE 548 13.5.4 TUNNEL DIODE 549 SUMMARY 551 PROBLEMS 551 REVIEW QUESTIONS 552 14 POWER DEVICES 554 14.1 POWER DIODES 555 14.1.1 DRIFT REGION IN POWER DEVICES 555 14.1.2 SWITCHING CHARACTERISTICS 557 14.1.3 SCHOTTKY DIODE 559 14.2 POWER MOSFET 559 14.3 IGBT 562 14.4 THYRISTOR 564 SUMMARY 566 PROBLEMS 567 REVIEW QUESTIONS 568 BIBLIOGRAPHY 571 ANSWERS TO SELECTED PROBLEMS 573 INDEX 579
any_adam_object	1
any_adam_object_boolean	1
author	Dimitrijev, Sima
author_facet	Dimitrijev, Sima
author_role	aut
author_sort	Dimitrijev, Sima
author_variant	s d sd
building	Verbundindex
bvnumber	BV021500862
callnumber-first	T - Technology
callnumber-label	TK7871
callnumber-raw	TK7871.85
callnumber-search	TK7871.85
callnumber-sort	TK 47871.85
callnumber-subject	TK - Electrical and Nuclear Engineering
classification_rvk	UP 2800 ZN 4800
ctrlnum	(OCoLC)57344014 (DE-599)BVBBV021500862
dewey-full	621.3815/2
dewey-hundreds	600 - Technology (Applied sciences)
dewey-ones	621 - Applied physics
dewey-raw	621.3815/2
dewey-search	621.3815/2
dewey-sort	3621.3815 12
dewey-tens	620 - Engineering and allied operations
discipline	Physik Elektrotechnik / Elektronik / Nachrichtentechnik
discipline_str_mv	Physik Elektrotechnik / Elektronik / Nachrichtentechnik
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01483nam a2200385 c 4500</leader><controlfield tag="001">BV021500862</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20080826 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">060307s2006 ad\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0195161130</subfield><subfield code="9">0-19-516113-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780195161137</subfield><subfield code="9">978-0-19-516113-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)57344014</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV021500862</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-M347</subfield><subfield code="a">DE-1050</subfield><subfield code="a">DE-20</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2800</subfield><subfield code="0">(DE-625)146366:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dimitrijev, Sima</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Principles of semiconductor devices</subfield><subfield code="c">Sima Dimitrijev</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York [u.a.]</subfield><subfield code="b">Oxford Univ. Press</subfield><subfield code="c">2006</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVIII, 588 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">The Oxford series in electrical and computer engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">HEBIS Datenaustausch Darmstadt</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014717587&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-014717587</subfield></datafield></record></collection>
id	DE-604.BV021500862
illustrated	Illustrated
index_date	2024-07-02T14:15:24Z
indexdate	2024-07-09T20:37:13Z
institution	BVB
isbn	0195161130 9780195161137
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-014717587
oclc_num	57344014
open_access_boolean
owner	DE-29T DE-M347 DE-1050 DE-20 DE-634 DE-83
owner_facet	DE-29T DE-M347 DE-1050 DE-20 DE-634 DE-83
physical	XVIII, 588 S. Ill., graph. Darst.
publishDate	2006
publishDateSearch	2006
publishDateSort	2006
publisher	Oxford Univ. Press
record_format	marc
series2	The Oxford series in electrical and computer engineering
spelling	Dimitrijev, Sima Verfasser aut Principles of semiconductor devices Sima Dimitrijev New York [u.a.] Oxford Univ. Press 2006 XVIII, 588 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Oxford series in electrical and computer engineering Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s DE-604 HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014717587&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Dimitrijev, Sima Principles of semiconductor devices Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd
subject_GND	(DE-588)4113826-0
title	Principles of semiconductor devices
title_auth	Principles of semiconductor devices
title_exact_search	Principles of semiconductor devices
title_exact_search_txtP	Principles of semiconductor devices
title_full	Principles of semiconductor devices Sima Dimitrijev
title_fullStr	Principles of semiconductor devices Sima Dimitrijev
title_full_unstemmed	Principles of semiconductor devices Sima Dimitrijev
title_short	Principles of semiconductor devices
title_sort	principles of semiconductor devices
topic	Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd
topic_facet	Semiconductors Halbleiterbauelement
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014717587&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT dimitrijevsima principlesofsemiconductordevices

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