Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
2005
|
| Schlagworte: | |
| Online-Zugang: | kostenfrei http://d-nb.info/977229467/34 kostenfrei |
| Beschreibung: | Erlangen-Nürnberg, Univ., Diss., 2005 |
| Beschreibung: | 1 Online-Ressource |
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Datensatz im Suchindex
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| index_date | 2024-07-02T13:31:15Z |
| indexdate | 2024-07-09T20:28:35Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-014283425 |
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| spelling | Reshanov, Sergey 1974- Verfasser (DE-588)130564591 aut Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov 2005 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Erlangen-Nürnberg, Univ., Diss., 2005 Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Gitterbaufehler (DE-588)4125030-8 s DE-604 https://open.fau.de/handle/openfau/208 Verlag kostenfrei Volltext http://d-nb.info/977229467/34 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-2654 Verlag kostenfrei Volltext |
| spellingShingle | Reshanov, Sergey 1974- Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC Gitterbaufehler (DE-588)4125030-8 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4125030-8 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_auth | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_exact_search | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_exact_search_txtP | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_full | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov |
| title_fullStr | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov |
| title_full_unstemmed | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov |
| title_short | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_sort | device relevant defect centers and minority carrier lifetime in 3c 4h and 6h sic |
| topic | Gitterbaufehler (DE-588)4125030-8 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Gitterbaufehler Siliciumcarbid Hochschulschrift |
| url | https://open.fau.de/handle/openfau/208 http://d-nb.info/977229467/34 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-2654 |
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