Gettering defects in semiconductors:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English Russian |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2005
|
| Schriftenreihe: | Springer series in advanced microelectronics
19 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. 343 - 366 |
| Beschreibung: | XV, 386 S. Ill., graph. Darst. |
| ISBN: | 354026244X 9783540262442 |
Internformat
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| 100 | 1 | |a Perevoščikov, Viktor A. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Gettering defects in semiconductors |c V. A. Perevostchikov ; V. D. Skoupov. [Transl.: Victor Gloumov] |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2005 | |
| 300 | |a XV, 386 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
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| 490 | 1 | |a Springer series in advanced microelectronics |v 19 | |
| 500 | |a Literaturverz. S. 343 - 366 | ||
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| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Getterung |0 (DE-588)4157223-3 |2 gnd |9 rswk-swf |
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| 700 | 1 | |a Skupov, Vladimir D. |e Verfasser |4 aut | |
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Datensatz im Suchindex
| _version_ | 1804134678334013440 |
|---|---|
| adam_text | V.A. PEREVOSTCHIKOV V.D. SKOUPOV GETTERING DEFECTS IN SEMICONDUCTORS
WITH 70 FIGURES SPRIN G ER CONTENTS LIST OF ABBREVIATIONS IX NAMES AND
ABBREVIATIONS OF PUBLISHING HOUSES AND PERIODICALS XII INTRODUCTION 1 1.
BASIC TECHNOLOGICAL PROCESSES AND DEFECT FORMATION IN THE COMPONENTS OF
DEVICE STRUCTURES 5 1.1. GENERAL 5 1.2. GENERAL INFONNATION ON THE
TECHNOLOGY OF GROWING CRYSTALS AND THEIR MECHANICAL TREATMENT 17 1.3.
TECHNOLOGICAL PROCESSES OF DIELECTRIC FILM DEPOSITION AND SEMICONDUCTOR
OXIDATION 35 1.4. DIFFUSIVE PROCESSES IN SEMICONDUCTORS 42 1.5.
ION-IMPLANTED DEFECTS 48 1.6. EPITAXIAL LAYER CONSTRUCTING TECHNOLOGY 54
1.7. LITHOGRAPHIC PROCESSES 62 1.8. TECHNOLOGICAL PROCESSES OF ETCHING
64 1.9. TECHNOLOGICAL PROCESSES OF METALLIZATION 77 2. THE EFFECTS OF
DEFECTS ON ELECTROPHYSICAL AND FUNCTIONAL PARAMETERS OF SEMICONDUCTING
STRUCTURES AND DEVICES 79 2.1. GENERAL 79 2.2. POINT DEFECTS, AGGREGATES
AND MICRODEFECTS 82 2.3. DISLOCATIONS AND STACKING FAULTS 95 2.4.
DEFECTS IN THE DEVICE LAYERSOF THE SILICON-ON-DIELECTRIC (SOD)
STRUCTURES 102 2.4.1. SILICON-ON-SAPPHIRE (SOS) STRUCTURES 103 2.4.2.
SILICON-ON-ISOLATOR (SOI) STRUCTURES 108 3. TECHNIQUES FOR
HIGH-TEMPERATURE GETTERING 127 3.1. GETTERING BY STRUCTURALLY-DAMAGED
LAYERS 127 3.1.1. GETTERING BY MECHANICALLY-DAMAGED LAYERS 128 3.1.2.
IMPACT-ACOUSTIC TREATMENT 140 3.1.3. DIFFUSIVE DOPING 141 3.1.4.
ACCELERATED-ION IMPLANTATION 146 3.1.5. EFFECTS OF LASER IRRADIATION 153
3.1.6. GETTERING BY POROUS SILICON LAYERS 158 3.2. GETTERING BY
HETEROPHASE LAYERS 162 3.2.1. METALLIC FILMS 162 3.2.2. EXTRINSIC
SILICATE GLASSES 163 3.2.3. LAYERS OFPOLYSILICON AND SILICON NITRIDE 164
X 3.2.4. SUICIDES OF HARD-MELTING METALS 166 3.3. THERMAL TREATMENTS IN
GETTERING AMBIENTS 167 3.4. INTERNAL GETTER 169 3.5. COMPARATIVE
ANALYSIS OF GETTERING TECHNIQUE EFFICIENCY 179 3.6. MECHANISMS AND
MODELS OF GETTERING PROCESSES 182 3.6.1. INTERACTION OF POINT DEFECTS
WITH A FIELD OF ELASTIC STRESSES 183 3.6.2. ELECTRICAL INTERACTION OF
POINT DEFECTS 187 3.6.3. ABSORBING THE POINT DEFECTS BY A LIQUID-LIKE
PHASE 188 3.6.4. EXTRACTING THE POINT DEFECTS INTO AN EXTERNAL
ENVIRONMENT 188 3.6.5. ABSORBING THE POINT DEFECTS ON THE DEVELOPED
SURFACE OF A SOLID BODY 189 3.6.6. MODELS FOR DIFFUSIVE REDISTRIBUTION
OF POINT DEFECTS IN GETTERING 189 4. PHYSICAL FOUNDATIONS FOR
LOW-TEMPERATURE GETTERING TECHNIQUES 197 4.1. GETTERING EFFECTS DURING
AN ABRASIVE AND CHEMICAL TREATMENT OF CRYSTAL SURFACES 198 4.2.
STRUCTURAL CHANGES IN HYDROSTATICALLY-COMPRESSED SEMICONDUCTORS 220
4.2.1. EFFECTS OF HYDROSTATIC COMPRESSION ON STRUCTURAL DEFECTS IN
CRYSTALS 221 4.2.2. EFFECTS OF PRESSURE ON PORES IN SOLIDS 224 4.2.3.
COMPRESSION-INDUCED STRUCTURAL CHANGES EXPERIMENTALLY OBSERVED IN
SEMICONDUCTORS 226 4.2.3.1. HYDROSTATICALLY-COMPRESSED MONOCRYSTALS AND
EPITAXIAL STRUCTURES 227 4.2.3.2. EFFECTS OF HYDROSTATIC PRESSURE ON THE
MOS-STRUCTURE ELEMENTS 235 4.2.3.3. STRENGTH OF MICROWELDED
HYDROSTATICALLY-COMPRESSED JOINTS 244 4.2.3.4. CHANGES IN ELECTRICAL
PROPERTIESOF HYDROSTATICALLY- COMPRESSED SEMICONDUCTORS 245 4.3.
STRUCTURAL CHANGES IN MICRODEFECTS AND PROPERTIES OF SILICON AND
SILICON-BASED ULTRASONICALLY-IRRADIATED STRUCTURES 251 4.4.
IRRADIATION-STIMULATED GETTERING 284 4.4.1. IRRADIATING CRYSTALS BY
ACCELERATED IONS 285 4.4.2. EFFECTS OF IRRADIATION ON SEMICONDUCTING
STRUCTURES 304 4.4.3. MODELS FOR LOW-TEMPERATURE GETTERING OF IRRADIATED
STRUCTURES .329 CONCLUSION 341 REFERENCES 343 SUBJECT INDEX 367 AUTHORS
INDEX 383
|
| adam_txt |
V.A. PEREVOSTCHIKOV V.D. SKOUPOV GETTERING DEFECTS IN SEMICONDUCTORS
WITH 70 FIGURES SPRIN G ER CONTENTS LIST OF ABBREVIATIONS IX NAMES AND
ABBREVIATIONS OF PUBLISHING HOUSES AND PERIODICALS XII INTRODUCTION 1 1.
BASIC TECHNOLOGICAL PROCESSES AND DEFECT FORMATION IN THE COMPONENTS OF
DEVICE STRUCTURES 5 1.1. GENERAL 5 1.2. GENERAL INFONNATION ON THE
TECHNOLOGY OF GROWING CRYSTALS AND THEIR MECHANICAL TREATMENT 17 1.3.
TECHNOLOGICAL PROCESSES OF DIELECTRIC FILM DEPOSITION AND SEMICONDUCTOR
OXIDATION 35 1.4. DIFFUSIVE PROCESSES IN SEMICONDUCTORS 42 1.5.
ION-IMPLANTED DEFECTS 48 1.6. EPITAXIAL LAYER CONSTRUCTING TECHNOLOGY 54
1.7. LITHOGRAPHIC PROCESSES 62 1.8. TECHNOLOGICAL PROCESSES OF ETCHING
64 1.9. TECHNOLOGICAL PROCESSES OF METALLIZATION 77 2. THE EFFECTS OF
DEFECTS ON ELECTROPHYSICAL AND FUNCTIONAL PARAMETERS OF SEMICONDUCTING
STRUCTURES AND DEVICES 79 2.1. GENERAL 79 2.2. POINT DEFECTS, AGGREGATES
AND MICRODEFECTS 82 2.3. DISLOCATIONS AND STACKING FAULTS 95 2.4.
DEFECTS IN THE DEVICE LAYERSOF THE SILICON-ON-DIELECTRIC (SOD)
STRUCTURES 102 2.4.1. SILICON-ON-SAPPHIRE (SOS) STRUCTURES 103 2.4.2.
SILICON-ON-ISOLATOR (SOI) STRUCTURES 108 3. TECHNIQUES FOR
HIGH-TEMPERATURE GETTERING 127 3.1. GETTERING BY STRUCTURALLY-DAMAGED
LAYERS 127 3.1.1. GETTERING BY MECHANICALLY-DAMAGED LAYERS 128 3.1.2.
IMPACT-ACOUSTIC TREATMENT 140 3.1.3. DIFFUSIVE DOPING 141 3.1.4.
ACCELERATED-ION IMPLANTATION 146 3.1.5. EFFECTS OF LASER IRRADIATION 153
3.1.6. GETTERING BY POROUS SILICON LAYERS 158 3.2. GETTERING BY
HETEROPHASE LAYERS 162 3.2.1. METALLIC FILMS 162 3.2.2. EXTRINSIC
SILICATE GLASSES 163 3.2.3. LAYERS OFPOLYSILICON AND SILICON NITRIDE 164
X 3.2.4. SUICIDES OF HARD-MELTING METALS 166 3.3. THERMAL TREATMENTS IN
GETTERING AMBIENTS 167 3.4. INTERNAL GETTER 169 3.5. COMPARATIVE
ANALYSIS OF GETTERING TECHNIQUE EFFICIENCY 179 3.6. MECHANISMS AND
MODELS OF GETTERING PROCESSES 182 3.6.1. INTERACTION OF POINT DEFECTS
WITH A FIELD OF ELASTIC STRESSES 183 3.6.2. ELECTRICAL INTERACTION OF
POINT DEFECTS 187 3.6.3. ABSORBING THE POINT DEFECTS BY A LIQUID-LIKE
PHASE 188 3.6.4. EXTRACTING THE POINT DEFECTS INTO AN EXTERNAL
ENVIRONMENT 188 3.6.5. ABSORBING THE POINT DEFECTS ON THE DEVELOPED
SURFACE OF A SOLID BODY 189 3.6.6. MODELS FOR DIFFUSIVE REDISTRIBUTION
OF POINT DEFECTS IN GETTERING 189 4. PHYSICAL FOUNDATIONS FOR
LOW-TEMPERATURE GETTERING TECHNIQUES 197 4.1. GETTERING EFFECTS DURING
AN ABRASIVE AND CHEMICAL TREATMENT OF CRYSTAL SURFACES 198 4.2.
STRUCTURAL CHANGES IN HYDROSTATICALLY-COMPRESSED SEMICONDUCTORS 220
4.2.1. EFFECTS OF HYDROSTATIC COMPRESSION ON STRUCTURAL DEFECTS IN
CRYSTALS 221 4.2.2. EFFECTS OF PRESSURE ON PORES IN SOLIDS 224 4.2.3.
COMPRESSION-INDUCED STRUCTURAL CHANGES EXPERIMENTALLY OBSERVED IN
SEMICONDUCTORS 226 4.2.3.1. HYDROSTATICALLY-COMPRESSED MONOCRYSTALS AND
EPITAXIAL STRUCTURES 227 4.2.3.2. EFFECTS OF HYDROSTATIC PRESSURE ON THE
MOS-STRUCTURE ELEMENTS 235 4.2.3.3. STRENGTH OF MICROWELDED
HYDROSTATICALLY-COMPRESSED JOINTS 244 4.2.3.4. CHANGES IN ELECTRICAL
PROPERTIESOF HYDROSTATICALLY- COMPRESSED SEMICONDUCTORS 245 4.3.
STRUCTURAL CHANGES IN MICRODEFECTS AND PROPERTIES OF SILICON AND
SILICON-BASED ULTRASONICALLY-IRRADIATED STRUCTURES 251 4.4.
IRRADIATION-STIMULATED GETTERING 284 4.4.1. IRRADIATING CRYSTALS BY
ACCELERATED IONS 285 4.4.2. EFFECTS OF IRRADIATION ON SEMICONDUCTING
STRUCTURES 304 4.4.3. MODELS FOR LOW-TEMPERATURE GETTERING OF IRRADIATED
STRUCTURES .329 CONCLUSION 341 REFERENCES 343 SUBJECT INDEX 367 AUTHORS'
INDEX 383 |
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| author | Perevoščikov, Viktor A. Skupov, Vladimir D. |
| author_facet | Perevoščikov, Viktor A. Skupov, Vladimir D. |
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| discipline | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV021234431 |
| illustrated | Illustrated |
| index_date | 2024-07-02T13:29:20Z |
| indexdate | 2024-07-09T20:28:26Z |
| institution | BVB |
| isbn | 354026244X 9783540262442 |
| language | English Russian |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-014277216 |
| oclc_num | 633958393 |
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| owner_facet | DE-703 DE-91 DE-BY-TUM DE-1043 |
| physical | XV, 386 S. Ill., graph. Darst. |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in advanced microelectronics |
| series2 | Springer series in advanced microelectronics |
| spelling | Perevoščikov, Viktor A. Verfasser aut Gettering defects in semiconductors V. A. Perevostchikov ; V. D. Skoupov. [Transl.: Victor Gloumov] Berlin [u.a.] Springer 2005 XV, 386 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in advanced microelectronics 19 Literaturverz. S. 343 - 366 Störstelle (DE-588)4193400-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Getterung (DE-588)4157223-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Störstelle (DE-588)4193400-3 s Getterung (DE-588)4157223-3 s DE-604 Skupov, Vladimir D. Verfasser aut Erscheint auch als Online-Ausgabe 978-3-540-29499-3 Springer series in advanced microelectronics 19 (DE-604)BV012563021 19 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014277216&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Perevoščikov, Viktor A. Skupov, Vladimir D. Gettering defects in semiconductors Springer series in advanced microelectronics Störstelle (DE-588)4193400-3 gnd Halbleiter (DE-588)4022993-2 gnd Getterung (DE-588)4157223-3 gnd |
| subject_GND | (DE-588)4193400-3 (DE-588)4022993-2 (DE-588)4157223-3 |
| title | Gettering defects in semiconductors |
| title_auth | Gettering defects in semiconductors |
| title_exact_search | Gettering defects in semiconductors |
| title_exact_search_txtP | Gettering defects in semiconductors |
| title_full | Gettering defects in semiconductors V. A. Perevostchikov ; V. D. Skoupov. [Transl.: Victor Gloumov] |
| title_fullStr | Gettering defects in semiconductors V. A. Perevostchikov ; V. D. Skoupov. [Transl.: Victor Gloumov] |
| title_full_unstemmed | Gettering defects in semiconductors V. A. Perevostchikov ; V. D. Skoupov. [Transl.: Victor Gloumov] |
| title_short | Gettering defects in semiconductors |
| title_sort | gettering defects in semiconductors |
| topic | Störstelle (DE-588)4193400-3 gnd Halbleiter (DE-588)4022993-2 gnd Getterung (DE-588)4157223-3 gnd |
| topic_facet | Störstelle Halbleiter Getterung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014277216&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV012563021 |
| work_keys_str_mv | AT perevoscikovviktora getteringdefectsinsemiconductors AT skupovvladimird getteringdefectsinsemiconductors |