The insulated gate bipolar transistor IGBT: theory and design
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York, NY
Wiley, John, & Sons, Inc
2003
Piscataway, NJ IEEE Press |
| Schlagworte: | |
| Beschreibung: | XIX, 626 S. Ill., graph. Darst. |
| ISBN: | 0471238457 |
Internformat
MARC
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| 245 | 1 | 0 | |a The insulated gate bipolar transistor IGBT |b theory and design |c Vinod Kumar Khanna |
| 264 | 1 | |a New York, NY |b Wiley, John, & Sons, Inc |c 2003 | |
| 264 | 1 | |a Piscataway, NJ |b IEEE Press | |
| 300 | |a XIX, 626 S. |b Ill., graph. Darst. | ||
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| 650 | 0 | 7 | |a IGBT |0 (DE-588)4273802-7 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a IGBT |0 (DE-588)4273802-7 |D s |
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Datensatz im Suchindex
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| any_adam_object | |
| author | Khanna, Vinod Kumar 1952- |
| author_GND | (DE-588)129277800 |
| author_facet | Khanna, Vinod Kumar 1952- |
| author_role | aut |
| author_sort | Khanna, Vinod Kumar 1952- |
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| bvnumber | BV019687280 |
| callnumber-first | T - Technology |
| callnumber-label | TK7971 |
| callnumber-raw | TK7971.96.B55 |
| callnumber-search | TK7971.96.B55 |
| callnumber-sort | TK 47971.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4850 |
| ctrlnum | (OCoLC)51755999 (DE-599)BVBBV019687280 |
| dewey-full | 621.3815/282 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/282 |
| dewey-search | 621.3815/282 |
| dewey-sort | 3621.3815 3282 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV019687280 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T20:03:50Z |
| institution | BVB |
| isbn | 0471238457 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-013015147 |
| oclc_num | 51755999 |
| open_access_boolean | |
| owner | DE-1043 DE-92 DE-29T DE-706 |
| owner_facet | DE-1043 DE-92 DE-29T DE-706 |
| physical | XIX, 626 S. Ill., graph. Darst. |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Wiley, John, & Sons, Inc IEEE Press |
| record_format | marc |
| spelling | Khanna, Vinod Kumar 1952- Verfasser (DE-588)129277800 aut The insulated gate bipolar transistor IGBT theory and design Vinod Kumar Khanna New York, NY Wiley, John, & Sons, Inc 2003 Piscataway, NJ IEEE Press XIX, 626 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Insulated gate bipolar transistors IGBT (DE-588)4273802-7 gnd rswk-swf IGBT (DE-588)4273802-7 s DE-604 |
| spellingShingle | Khanna, Vinod Kumar 1952- The insulated gate bipolar transistor IGBT theory and design Insulated gate bipolar transistors IGBT (DE-588)4273802-7 gnd |
| subject_GND | (DE-588)4273802-7 |
| title | The insulated gate bipolar transistor IGBT theory and design |
| title_auth | The insulated gate bipolar transistor IGBT theory and design |
| title_exact_search | The insulated gate bipolar transistor IGBT theory and design |
| title_full | The insulated gate bipolar transistor IGBT theory and design Vinod Kumar Khanna |
| title_fullStr | The insulated gate bipolar transistor IGBT theory and design Vinod Kumar Khanna |
| title_full_unstemmed | The insulated gate bipolar transistor IGBT theory and design Vinod Kumar Khanna |
| title_short | The insulated gate bipolar transistor IGBT |
| title_sort | the insulated gate bipolar transistor igbt theory and design |
| title_sub | theory and design |
| topic | Insulated gate bipolar transistors IGBT (DE-588)4273802-7 gnd |
| topic_facet | Insulated gate bipolar transistors IGBT |
| work_keys_str_mv | AT khannavinodkumar theinsulatedgatebipolartransistorigbttheoryanddesign |