Semiconductor nanostructures for optoelectronic applications:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Boston, Mass. [u.a.]
Artech House
2004
|
| Schriftenreihe: | Semiconductor materials and devices series
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | IX, 424 S. Ill., graph. Darst. |
| ISBN: | 1580537510 |
Internformat
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| 245 | 1 | 0 | |a Semiconductor nanostructures for optoelectronic applications |c Todd Steiner ed. |
| 264 | 1 | |a Boston, Mass. [u.a.] |b Artech House |c 2004 | |
| 300 | |a IX, 424 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
| _version_ | 1804132758009675776 |
|---|---|
| adam_text | SEMICONDUCTOR NANOSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS TODD
STEINER EDITOR M ARTECH HOUSE, INC. BOSTON * LONDON WWW.ARTECHHOUSE.COM
CONTENTS CHAPTER 1 INTRODUCTION 1.1 SYNOPSIS 1.2 GROWTH 1.3
OPTOELECTRONIC DEVICES BASED ON SEMICONDUCTOR NANOSTRUCTURES 1.4
MATERIALS FOR SEMICONDUCTOR NANOSTRUCTURES 1.5 SUMMARY 1 1 1 2 2 3
CHAPTER 2 REVIEW OF CRYSTAL, THIN-FILM, AND NANOSTRUCTURE GROWTH
TECHNOLOGIES 5 2.1 INTRODUCTION 5 2.2 REVIEW OF THERMODYNAMICS 6 2.2.1
CHEMICAL REACTIONS 7 2.2.2 PHASE DIAGRAMS 7 2.3 BULK CRYSTAL GROWTH
TECHNIQUES 8 2.3.1 CZOCHRALSKI METHOD 8 2.3.2 BRIDGMAN METHOD 11 2.3.3
FLOAT-ZONE METHOD 13 2.3.4 LELY GROWTH METHODS 14 2.4 EPITAXIAL GROWTH
TECHNIQUES 16 2.4.1 LIQUID PHASE EPITAXY 16 2.4.2 VAPOR PHASE EPITAXY 17
2.4.3 MOLECULAR BEAM EPITAXY 20 2.4.4 METALORGANIC CHEMICAL VAPOR
DEPOSITION 24 2.4.5 ATOMIC LAYER EPITAXY 29 2.5 THIN-FILM DEPOSITION
TECHNIQUES 29 2.5.1 PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION 29 2.5.2
VACUUM EVAPORATION 31 2.5.3 SPUTTERING 33 2.6 GROWTH OF NANOSTRUCTURES
34 2.6.1 PROPERTIES AND REQUIREMENTS OF QUANTUM DOT DEVICES 35 2.6.2
GROWTH TECHNIQUES 36 REFERENCES 41 VI CONTENTS CHAPTER 3 QUANTUM DOT
INFRARED PHOTODETECTORS 45 3.1 INTRODUCTION 45 3.2 QD AND QDIP STRUCTURE
GROWTH AND CHARACTERIZATION 49 3.2.1 GAAS CAPPED LARGE AND SMALL INAS
QDS 50 3.2.2 ALGAAS CAPPED LARGE INAS MQD QDIP STRUCTURES 57 3.2.3
IN^GA^AS CAPPED SMALL AND LARGE INAS MQD-BASED QDIP STRUCTURES 64 3.3
QDIP DEVICE CHARACTERISTICS 76 3.3.1 DEVICE STRUCTURES 76 3.3.2
UNINTENTIONALLY DOPED LARGE (PIG) INAS/GAAS MQD-BASED DETECTORS 77 3.3.3
QDIPS WITH ALGAAS BLOCKING LAYERS 87 3.3.4 HL^NGAAS/GAAS QDIPS 92 3.3.5
DUAL-COLOR QDIPS 102 3.4 PROGNOSIS 107 ACKNOWLEDGMENTS 109 REFERENCES
109 CHAPTER 4 QUANTUM DOT LASERS: THEORETICAL OVERVIEW 113 4.1
INTRODUCTION: DIMENSIONALITY AND LASER PERFORMANCE 113 4.2 ADVANTAGES OF
AN IDEALIZED QD LASER 115 4.3 PROGRESS IN FABRICATING QD LASERS 115 4.4
STATE-OF-THE-ART COMPLICATIONS 116 4.4.1 NONUNIFORMITY OF QDS 117 4.4.2
PARASITIC RECOMBINATION OUTSIDE QDS 126 4.4.3 VIOLATION OF LOCAL
NEUTRALITY IN QDS 129 4.4.4 EXCITED STATES 131 4.4.5 SPATIAL
DISCRETENESS OF ACTIVE ELEMENTS: HOLE BURNING 132 4.4.6 INTRINSIC
NONLINEARITY OF THE LIGHT-CURRENT CHARACTERISTIC 134 4.4.7 CRITICAL
SENSITIVITY TO STRUCTURE PARAMETERS 139 4.4.8 DEPENDENCE OF THE MAXIMUM
GAIN ON THE QD SHAPE 142 4.4.9 INTERNAL OPTICAL LOSS 143 4.5 NOVEL
DESIGNS OF QD LASERS WITH IMPROVED THRESHOLD AND POWER CHARACTERISTICS
148 4.5.1 TEMPERATURE-INSENSITIVE THRESHOLD 148 4.5.2 ENHANCED POWER
PERFORMANCE 150 4.6 OTHER PERSPECTIVES 151 REFERENCES 153 CONTENTS VII
CHAPTER 5 HIGH-SPEED QUANTUM DOT LASERS 159 5.1 INTRODUCTION 159 5.2 MBE
GROWTH OF SELF-ORGANIZED QDS AND THEIR ELECTRONIC PROPERTIES 160 5.2.1
SELF-ORGANIZED GROWTH OF IN(GA)AS QDS 160 5.2.2 ELECTRONIC SPECTRA OF
IN(GA)AS/GAAS QDS 161 5.3 SEPARATE CONFINEMENT HETEROSTRUCTURE QD LASERS
AND THEIR LIMITATIONS 163 5.3.1 CARRIER RELAXATION AND PHONON BOTTLENECK
IN SELF-ORGANIZED QDS 164 5.3.2 HOT CARRIER EFFECTS IN SCH QD LASERS 167
5.4 TUNNEL INJECTION OF CARRIERS IN QDS 168 5.4.1 TUNNELING-INJECTION
LASER HETEROSTRUCTURE DESIGN AND MBE GROWTH 169 5.4.2 MEASUREMENT OF
PHONON-ASSISTED TUNNELING TIMES 170 5.5 CHARACTERISTICS OF HIGH-SPEED
TUNNELING-INJECTION QD LASERS 172 5.5.1 ROOM TEMPERATURE DC
CHARACTERISTICS 172 5.5.2 TEMPERATURE-DEPENDENT DC CHARACTERISTICS 172
5.5.3 HIGH-SPEED MODULATION CHARACTERISTICS 174 5.6 CONCLUSION 183
ACKNOWLEDGMENTS 183 REFERENCES 183 CHAPTER 6 ZINC OXIDE-BASED
NANOSTRUCTURES 187 6.1 INTRODUCTION 187 6.1.1 GENERAL PROPERTIES OF ZNO
187 6.1.2 ZNO ONE-DIMENSIONAL NANOSTRUCTURES 189 6.2 GROWTH TECHNIQUES
191 6.2.1 GROWTH MECHANISMS 191 6.2.2 GROWTH TECHNIQUES 194 6.2.3
SUMMARY 210 6.3 CHARACTERIZATIONS 211 6.3.1 STRUCTURAL CHARACTERIZATIONS
211 6.3.2 OPTICAL CHARACTERIZATIONS 215 6.4 DEVICE APPLICATIONS 219
6.4.1 OPTICAL DEVICES 219 6.4.2 ELECTRONIC DEVICES 221 REFERENCES 224
VIII CONTENTS CHAPTER 7 ANTIMONY-BASED MATERIALS FOR ELECTRO-OPTICS 229
7.1 INTRODUCTION 229 7.1.1 ANTIMONY 229 7.1.2 SB-BASED III-V
SEMICONDUCTOR ALLOYS 230 7.1.3 BULK SINGLE-CRYSTAL GROWTH 232 7.1.4
APPLICATIONS 232 7.2 III-SB BINARY COMPOUNDS: GASB, ALSB, AND INSB 235
7.2.1 GASB 235 7.2.2 ALSB 239 7.2.3 INSB 242 7.3 INASSB 250 7.3.1
PHYSICAL PROPERTIES 250 7.3.2 GROWTH OF INASSB 253 7.3.3
CHARACTERIZATIONS 253 7.3.4 DEVICE MEASUREMENT 256 7.4 INTLSB 259 7.4.1
MOCVD GROWTH OF INTLSB 259 7.4.2 INTLSB PHOTODETECTORS 262 7.5 INBISB
262 7.5.1 MOCVD GROWTH OF INSBBI 262 7.5.2 INSBBI PHOTODETECTORS 265 7.6
INTLASSB 266 7.7 INASSB/INASSBP FOR IR LASERS 267 7.7.1 GROWTH AND
CHARACTERIZATION OF INASSB AND INASSBP 268 7.7.2 STRAINED-LAYER
SUPERLATTICES 269 7.7.3 DEVICE RESULTS 271 7.8 GASB/INAS TYPE II
SUPERLATTICE FOR IR PHOTODETECTORS 273 7.8.1 INTRODUCTION 273 7.8.2
EXPERIMENTAL RESULTS FOR TYPE II PHOTODETECTORS 275 ACKNOWLEDGMENTS 284
REFERENCES 285 CHAPTER 8 GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF
ILL-NITRIDE QUANTUM DOTS 289 8.1 INTRODUCTION 289 8.2 GROWTH OF
ILL-NITRIDE QDS 291 8.2.1 MBE GROWTH OF ILL-NITRIDE QDS 292 8.2.2 OTHER
TECHNIQUES 314 8.3 OPTICAL PROPERTIES OF ILL-NITRIDE QDS 317 8.3.1
EFFECTS OF QUANTUM CONFINEMENT, STRAIN, AND POLARIZATION 318 CONTENTS
8.3.2 GANQDS 323 8.3.3 INGAN QDS 337 8.4 SUMMARY 343 REFERENCES 344
CHAPTER 9 SELF-ASSEMBLED GERMANIUM NANO-LSLANDS ON SILICON AND POTENTIAL
APPLICATIONS 349 9.1 INTRODUCTION 349 9.2 HETEROEPITAXY MECHANISMS 349
9.3 UNIFORM GE ISLANDS 350 9.4 REGISTRATION AND REGIMENTATION OF GE
ISLANDS 355 9.5 NOVEL DEVICE APPLICATIONS 362 9.5.1 OPTOELECTRONICS 362
9.5.2 THERMOELECTRICITY 365 9.5.3 ELECTRONICS APPLICATIONS 366 9.5.4
QUANTUM INFORMATION APPLICATIONS 366 9.6 CONCLUSION 367 REFERENCES 367
CHAPTER 10 CARBON NANOTUBE ENGINEERING AND PHYSICS 371 10.1 INTRODUCTION
371 10.2 CONTROLLED FABRICATION OF UNIFORM NANOTUBES IN A HIGHLY ORDERED
ARRAY 373 10.3 INTERFACING WITH BIOMOLECULES AND CELLS 379 10.4
INTRINSIC QUANTUM ELECTROMECHANICAL COUPLINGS 382 10.5 EXTRINSIC
COUPLING TO RADIATION FIELDS 391 10.6 HETER * JUNCTION NANOTUBES 392
10.7 PROSPECTS FOR FUTURE ADVANCES 396 ACKNOWLEDGMENTS 398 REFERENCES
398 ACRONYMS 403 ABOUT THE EDITOR 407 INDEX 409
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| indexdate | 2024-07-09T19:57:54Z |
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| isbn | 1580537510 |
| language | English |
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| physical | IX, 424 S. Ill., graph. Darst. |
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| spelling | Semiconductor nanostructures for optoelectronic applications Todd Steiner ed. Boston, Mass. [u.a.] Artech House 2004 IX, 424 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Semiconductor materials and devices series Nanostructures Optoelectronic devices Semiconductors Optical properties Nanostruktur (DE-588)4204530-7 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Nanostruktur (DE-588)4204530-7 s Optoelektronisches Bauelement (DE-588)4043689-5 s DE-604 Steiner, Todd D. Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012800837&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Semiconductor nanostructures for optoelectronic applications Nanostructures Optoelectronic devices Semiconductors Optical properties Nanostruktur (DE-588)4204530-7 gnd Halbleiter (DE-588)4022993-2 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
| subject_GND | (DE-588)4204530-7 (DE-588)4022993-2 (DE-588)4043689-5 |
| title | Semiconductor nanostructures for optoelectronic applications |
| title_auth | Semiconductor nanostructures for optoelectronic applications |
| title_exact_search | Semiconductor nanostructures for optoelectronic applications |
| title_full | Semiconductor nanostructures for optoelectronic applications Todd Steiner ed. |
| title_fullStr | Semiconductor nanostructures for optoelectronic applications Todd Steiner ed. |
| title_full_unstemmed | Semiconductor nanostructures for optoelectronic applications Todd Steiner ed. |
| title_short | Semiconductor nanostructures for optoelectronic applications |
| title_sort | semiconductor nanostructures for optoelectronic applications |
| topic | Nanostructures Optoelectronic devices Semiconductors Optical properties Nanostruktur (DE-588)4204530-7 gnd Halbleiter (DE-588)4022993-2 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
| topic_facet | Nanostructures Optoelectronic devices Semiconductors Optical properties Nanostruktur Halbleiter Optoelektronisches Bauelement |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012800837&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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