Wafer bonding: applications and technology
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2004
|
| Schriftenreihe: | Springer series in materials science
75 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XV, 499 S. Ill., graph. Darst. |
| ISBN: | 3540210490 |
Internformat
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Datensatz im Suchindex
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|---|---|
| adam_text | M.ALEXE U. GOESELE (EDS.) WAFER BONDING APPLICATIONS AND TECHNOLOGY WITH
372 FIGURES AND 25 TABLES SPRINGER CONTENTS LISTOFCONTRIBUTORS XIII 1
DIRECT BONDING, FUSION BONDING, ANODIC BONDING, WAFER BONDING: A
HISTORICAL PATENT PICTURE OF THE WORLDWIDE MOVING FRONT OF THE
STATE-OF-THE-ART OF CONTACT BONDING 1 J. HAISMA 1.1 RELEVANT PATENTS IN
A BROADER SCOPE 1 1.2 A MONOPOLISTIC UTILITARIAN FRAMEWORK 2 1.3
PHYSICAL BACKGROUND AND OBJECT IN VIEW 3 1.4 THE PRE-PATENT PERIOD OF
DIRECT BONDING 5 1.5 BONDING PATENTS PRE-WORLD WAR II 6 1.6 THE RISE OF
BONDING PATENTS POST-WORLD WAR II 7 1.7 THENOVELFACE OF CLASSICAL
ELECTRO-OPTICS 9 1.8 FUSION BONDING 13 1.9 ANODIC BONDING 17 1.10
SPECIFIC BONDING MATTERS 19 1.11 BONDING DIVERSITY 28 1.12
INORGANIC-ATOMS-SUPPORTED BONDING 31 1.13 SILICON-ON-INSULATOR (SOI) 34
1.14 SOME SOI TOPICS 39 1.15 ISOLATED-POCKET SOI 42 1.16
SEMICONDUCTOR-ON-SEMICONDUCTOR WAFER BONDING 44 1.17 SENSOR TECHNOLOGY
47 1.18 MEDICAL APPLICATIONS 49 1.19 PATENTS FUTURE : 51 REFERENCES 54
2 BASICS OF SILICON-ON-INSULATOR (SOI) TECHNOLOGY 61 J.-P. COLINGE 2.1
INTRODUCTION: WHAT IS SILICON-ON-INSULATOR? 61 2.2 GENERAL PROPERTIES OF
SOI DEVICES 64 2.3 THE SOI MOS TRANSISTOR 67 2.4 SOI CIRCUIT
APPLICATIONS 77 2.5 CONCLUSION 79 REFERENCES 79 3 SILICON-ON-INSULATOR
BY THE SMART CUT* PROCESS 85 G. K. CELLER, A. J. AUBERTON-HERVE, B.
ASPAR, C. LAGAHE-BLANCHARD, AND C. MALEVILLE VIII CONTENTS 3.1
INTRODUCTION 85 3.2 DISCOVERY OF CONTROLLED EXFOLIATION 85 3.3 PROCESS
DESCRIPTION 86 3.4 HYDROGEN SPLITTING/SEPARATION MECHANISM 88 3.5
VARIATIONS ON WAFER BONDING AND HYDROGEN-RELATED SPLITTING... 95 3.6
LARGE-SCALE MANUFACTURING OF SOI WAFERS FOR ADVANCED CMOS 98 3.7
ULTRATHIN PRODUCTS 100 3.8 CONCLUSIONS 102 REFERENCES 104 4 ELTRAN
TECHNOLOGY BASED ON WAFER BONDING AND POROUS SILICON 107 K. SAKAGUCHI
AND T. YONEHARA 4.1 INTRODUCTION 107 4.2 SPECIAL FEATURES OF ELTRAN 109
4.3 PROCESSES AND A CLEANROOM 111 4.4 PRODUCT QUALITY 122 4.5 MASS
PRODUCTION 126 4.6 COST-EFFECTIVENESS 127 4.7 POTENTIAL 149 4.8
CONCLUSIONS 153 REFERENCES 154 5 WAFER BONDING FOR HIGH-PERFORMANCE
LOGIC APPLICATIONS 157 K.W. GUARINI AND H.-S. P. WONG 5.1 INTRODUCTION
157 5.2 NOVEL DEVICE STRUCTURES - DOUBLE-GATE FIELD EFFECT TRANSISTORS
158 5.3 NOVEL DEVICE MATERIALS - STRAINED SILICON-ON-INSULATOR 166 5.4
THREE-DIMENSIONAL INTEGRATION 170 5.5 SUMMARY 185 REFERENCES 186 6
APPLICATION OF BONDED WAFERS TO THE FABRICATION OF ELECTRONIC DEVICES
193 A. W. NEVIN 6.1 INTRODUCTION 193 6.2 TRENCH-ISOLATED SOI STRUCTURES
193 6.3 MULTIPLE-LAYERED AND PATTERNED SOI STRUCTURES 231 6.4 SILICIDED
SOI STRUCTURES 233 6.5 SILICON-ON-SILICON BONDING 238 REFERENCES 251
CONTENTS IX 7 COMPOUND SEMICONDUCTOR HETEROSTRUCTURES BY SMART CUT*: SIC
ON INSULATOR, QUASIC* SUBSTRATES, INP AND GAAS HETEROSTRUCTURES ON
SILICON 263 L. DI CIOCCIO, E. JALAGUIER, AND F. LETERTRE 7.1
INTRODUCTION 263 7.2 SIC ON INSULATOR: SICOI 265 7.3 PROPERTIES OF THE
SIC LAYER AFTER SMART CUT* TRANSFER 270 7.4 SIC EPITAXY 274 7.5
HETEROEPITAXY OF GAN 275 7.6 DEVICES ON SICOI 279 7.7 CHARACTERIZATION
OF SICOI N-TYPE 4H-SIC THIN FILM PIEZORESISTORS IN A PRESSURE SENSOR FOR
HIGH-TEMPERATURE APPLICATIONS 284 7.8 QUASIC* SMART CUT* SUBSTRATES FOR
SIC HIGH-POWER DEVICES 288 7.9 III-V LAYERS TRANSFER BY THE SMART CUT*
PROCESS 293 7.10 CONCLUSIONS 309 REFERENCES 310 8 THREE-DIMENSIONAL
PHOTONIC BANDGAP CRYSTALS BY WAFER BONDING APPROACH 315 S.NODA 8.1
INTRODUCTION 315 8.2 FABRICATION AND OPTICAL PROPERTIES OF 3D PHOTONIC
CRYSTALS ,AT INFRARED TO NEAR-INFRARED WAVELENGTHS 316 8.3 SUMMARY 324
REFERENCES 325 9 WAFER DIRECT BONDING FOR HIGH-BRIGHTNESS LIGHT-EMITTING
DIODES AND VERTICAL-CAVITY SURFACE-EMITTING LASERS 327 A. PLOESSL 9.1
HIGH-BRIGHTNESS LIGHT-EMITTING DIODES 327 9.2 TRANSPARENT-SUBSTRATE
ALGALNP LEDS 333 9.3 ALTERNATIVE BONDING METHODS FOR LEDS 341 9.4
LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICES 346
REFERENCES 353 10 HIGH-DENSITY HYBRID INTEGRATION OF III-V COMPOUND
OPTOELECTRONICS WITH SILICON INTEGRATED CIRCUITS 359 E.D.
KYRIAKIS-BITZAROS AND G. HALKIAS 10.1 INTRODUCTION 359 10.2 FLIP-CHIP
ASSEMBLY OF III-V OE ON CMOS DIES 360 10.3 EPITAXIAL LIFTOFF 363 10.4
APPLIQUE 366 X CONTENTS 10.5 LOW-TEMPERATURE WAFER BONDING 368 10.6
FLUIDIC SELF-ASSEMBLY TECHNOLOGIES 371 10.7 CONCLUDING REMARKS 374
REFERENCES 374 11 LAYER TRANSFER BY BONDING AND LASER LIFT-OFF 377 T.D.
SANDS, W.S. WONG, AND N.W. CHEUNG 11.1 INTRODUCTION 377 11.2 OPTICAL,
THERMAL, MECHANICAL AND CHEMICAL RESPONSES TO PULSED LASER IRRADIATION
OF SOLID INTERFACES 384 11.3 PROCESS FLOWS FOR LAYER TRANSFER BY LASER
LIFT-OFF 392 11.4 SPECIFIC MATERIAL SYSTEMS 396 11.5 APPLICATIONS OF
LASER LIFT-OFF. 403 11.6 ISSUESINTHE SCALE-UP OF LASER LIFT-OFF FOR
MANUFACTURING 408 11.7 PROSPECTS AND POTENTIAL IMPACT OF LASER
LIFT-OFF.... 410 REFERENCES 411 12 SINGLE-CRYSTAL LITHIUM NIOBATE FILMS
BY CRYSTAL ION SLICING 417 M. LEVY AND A. M. RADOJEVIC 12.1 BACKGROUND
417 12.2 PROPERTIES OFBULK LITHIUM NIOBATE 417 12.3 THE CRYSTAL ION
SLICING PROCESS 420 12.4 THIN FILM LAYER TRANSFER USING CRYSTAL ION
SLICING 424 12.5 CIS PROCESS FOR ACTIVE-CONTROL INTEGRATED OPTIC DEVICES
433 12.6 THIN-FILM BONDING AND HYBRID INTEGRATION 434 12.7 OPTICAL
PROPERTIES OF SLICED LINBO 3 FILMS 434 12.8 QUASI-PHASE-MATCHING IN
SINGLE-CRYSTAL PERIODICALLY-POLED LINBO 3 FILMS 438 12.9 ZERO-ORDER CIS
FILM WAVE-RETARDERS 440 12.10 CRYSTAL-ION-SLICED THIN FILM PYROELECTRIC
DETECTORS 443 12.11 CONCLUSION 446 REFERENCES 447 13 WAFER BONDING OF
FERROELECTRIC MATERIALS 451 M. ALEXE, I. RADU, AND I. SZAFRANIAK 13.1
INTRODUCTION 451 13.2 TRANSFER OF POLYCRYSTALLINE FERROELECTRIC LAYERS
453 13.3 FERROELECTRIC MOS DEVICES BY LAYER TRANSFER 458 13.4
SINGLE-CRYSTALLINE FERROELECTRIC THIN FILM 466 13.5 CONCLUSIONS 469
REFERENCES , 470 CONTENTS XI 14 DEBONDING OF WAFER-BONDED INTERFACES FOR
HANDLING AND TRANSFER APPLICATIONS 473 J. BAGDAHN AND M. PETZOLD 14.1
INTRODUCTION 473 14.2 DEBONDING METHODS 476 14.3 APPLICATIONS AND
DEBONDING DEVICES 487 REFERENCES 493 INDEX I 495
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| indexdate | 2024-07-09T19:57:49Z |
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| physical | XV, 499 S. Ill., graph. Darst. |
| publishDate | 2004 |
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| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Wafer bonding applications and technology M. Alexe, U. Gösele (eds.) Berlin [u.a.] Springer 2004 XV, 499 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 75 Semiconductor wafers Semiconductors Bonding Wafer (DE-588)4294605-0 gnd rswk-swf Bonden (DE-588)4232594-8 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content Wafer (DE-588)4294605-0 s Bonden (DE-588)4232594-8 s DE-604 Alexe, Marin Sonstige oth Gösele, Ulrich 1949-2009 Sonstige (DE-588)108522024 oth Springer series in materials science 75 (DE-604)BV000683335 75 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012797049&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Wafer bonding applications and technology Springer series in materials science Semiconductor wafers Semiconductors Bonding Wafer (DE-588)4294605-0 gnd Bonden (DE-588)4232594-8 gnd |
| subject_GND | (DE-588)4294605-0 (DE-588)4232594-8 (DE-588)4143413-4 |
| title | Wafer bonding applications and technology |
| title_auth | Wafer bonding applications and technology |
| title_exact_search | Wafer bonding applications and technology |
| title_full | Wafer bonding applications and technology M. Alexe, U. Gösele (eds.) |
| title_fullStr | Wafer bonding applications and technology M. Alexe, U. Gösele (eds.) |
| title_full_unstemmed | Wafer bonding applications and technology M. Alexe, U. Gösele (eds.) |
| title_short | Wafer bonding |
| title_sort | wafer bonding applications and technology |
| title_sub | applications and technology |
| topic | Semiconductor wafers Semiconductors Bonding Wafer (DE-588)4294605-0 gnd Bonden (DE-588)4232594-8 gnd |
| topic_facet | Semiconductor wafers Semiconductors Bonding Wafer Bonden Aufsatzsammlung |
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