1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
1968
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Internformat
MARC
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| 100 | 1 | |a Hatz, Jörg |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| 246 | 1 | 3 | |a 1. Laser diodes made from dislocation-free GaAs showing a homogeneous rearfield pattern |
| 264 | 1 | |c 1968 | |
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 505 | 0 | |a 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. Diss. Naturwiss. Bern 1968. - 4. fig. Hbq 257<br>SA.aus: Physica status solidi, Bd.28<1968>, S.233-245;IEEE Journal of quantum electronics, Vol. QE-3-, No 11 | |
| 505 | 0 | |a <1967>. S.643-644 und Vol. QE-3, No 12 <1967>. S.656-662. | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-011476172 | ||
| 980 | 4 | |a (DE-12)AK09260263 | |
| 980 | 4 | |a (DE-12)AK09260264 | |
Datensatz im Suchindex
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|---|---|
| any_adam_object | |
| author | Hatz, Jörg |
| author_facet | Hatz, Jörg |
| author_role | aut |
| author_sort | Hatz, Jörg |
| author_variant | j h jh |
| building | Verbundindex |
| bvnumber | BV018705437 |
| contents | 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. Diss. Naturwiss. Bern 1968. - 4. fig. Hbq 257<br>SA.aus: Physica status solidi, Bd.28<1968>, S.233-245;IEEE Journal of quantum electronics, Vol. QE-3-, No 11 <1967>. S.643-644 und Vol. QE-3, No 12 <1967>. S.656-662. |
| ctrlnum | (OCoLC)163740857 (DE-599)BVBBV018705437 |
| format | Book |
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| id | DE-604.BV018705437 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T19:34:59Z |
| institution | BVB |
| language | Undetermined |
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| publishDate | 1968 |
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| spelling | Hatz, Jörg Verfasser aut 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern 1. Laser diodes made from dislocation-free GaAs showing a homogeneous rearfield pattern 1968 txt rdacontent n rdamedia nc rdacarrier 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. Diss. Naturwiss. Bern 1968. - 4. fig. Hbq 257<br>SA.aus: Physica status solidi, Bd.28<1968>, S.233-245;IEEE Journal of quantum electronics, Vol. QE-3-, No 11 <1967>. S.643-644 und Vol. QE-3, No 12 <1967>. S.656-662. |
| spellingShingle | Hatz, Jörg 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. Diss. Naturwiss. Bern 1968. - 4. fig. Hbq 257<br>SA.aus: Physica status solidi, Bd.28<1968>, S.233-245;IEEE Journal of quantum electronics, Vol. QE-3-, No 11 <1967>. S.643-644 und Vol. QE-3, No 12 <1967>. S.656-662. |
| title | 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| title_alt | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous rearfield pattern |
| title_auth | 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| title_exact_search | 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| title_full | 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| title_fullStr | 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| title_full_unstemmed | 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| title_short | 1. Laser diodes made from disclocation-free GaAs showing a homogeneous rearfield pattern |
| title_sort | 1 laser diodes made from disclocation free gaas showing a homogeneous rearfield pattern |
| work_keys_str_mv | AT hatzjorg 1laserdiodesmadefromdisclocationfreegaasshowingahomogeneousrearfieldpattern AT hatzjorg 1laserdiodesmadefromdislocationfreegaasshowingahomogeneousrearfieldpattern |