Chemical mechanical planarization of semiconductor materials:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2004
|
| Schriftenreihe: | Springer series in materials science
69 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | X, 425 S. Ill., graph. Darst. |
| ISBN: | 3540431810 |
Internformat
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| 245 | 1 | 0 | |a Chemical mechanical planarization of semiconductor materials |c M. R. Oliver (ed.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2004 | |
| 300 | |a X, 425 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in materials science |v 69 | |
| 490 | 0 | |a Physics and astronomy online library | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Chemical mechanical planarization | |
| 650 | 4 | |a Grinding and polishing | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 650 | 0 | 7 | |a Chemisches Polieren |0 (DE-588)4227250-6 |2 gnd |9 rswk-swf |
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| 689 | 0 | 1 | |a Chemisches Polieren |0 (DE-588)4227250-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Oliver, Michael R. |e Sonstige |4 oth | |
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Datensatz im Suchindex
| _version_ | 1804130564622516225 |
|---|---|
| adam_text | CONTENTS 1 INTRODUCTION MICHAELR.OLIVER
............................................... 1 1.1
ORIGINALMOTIVATIONFORCMP................................ 1 1.2
CMPTECHNOLOGYANDITSTECHNICALUNDERSTANDING.............. 1 1.3
APPLICATIONSOFCMPTOSEMICONDUCTORPROCESSING ............. 2 1.4
POLISHINGTOOLSANDCONSUMABLESOFCMPTECHNOLOGY .......... 3 1.5
POSTCMPCLEANING ........................................ 4 1.6
INTEGRATIONOFCMPINTOTHESEMICONDUCTORFABRICATIONPROCESS.. 5 1.7
PATTERNDEPENDENCYISSUES.................................. 5 1.8
OTHERISSUES............................................... 6 REFERENCES
..................................................... 6 2 CMPTECHNOLOGY
MICHAELR.OLIVER ............................................... 7 2.1
BACKGROUNDANDMOTIVATIONFORCMP......................... 7 2.2
DESCRIPTIONOFTHECMPPROCESS.............................. 8 2.3
POLISHINGEQUIPMENT........................................ 8 2.4
POLISHPROCESS ............................................. 12 2.5
PLANARIZATION.............................................. 14 2.6
POLISHPROCESSVARIABLES..................................... 19 2.7
SCALESANDRANDOMPOLISHINGEFFECTS.......................... 26 2.8
RANDOMEFFECTS............................................ 30 2.9
SLURRIESWITHPARTICLESOTHERTHANSILICA....................... 31 2.10
NON-ILDNON-METALCMP................................... 33 2.11
CONCLUSION ................................................ 37
REFERENCES ..................................................... 38 3
METALPOLISHINGPROCESSES D.R.EVANS
.................................................... 41 3.1
METALPOLISHINGPROCESSES ................................... 41 3.2
EVOLUTIONOFDAMASCENESURFACEMORPHOLOGYDURINGPOLISHING... 46 3.3
SPECIFICSOFTUNGSTENANDCOPPERPOLISHING.................... 51 3.4
METALPOLISHINGCHEMISTRY .................................. 60 3.5
ACID*BASEEQUILIBRIA ....................................... 62 3.6
BUFFERING.................................................. 63 VIII
CONTENTS 3.7 OXIDATION*REDUCTIONREACTIONS..............................
66 3.8 HALFREACTIONS............................................. 67 3.9
ELECTRODEPOTENTIALS........................................ 67 3.10
COMPLEXATION.............................................. 71 3.11
SURFACTANTSANDINHIBITORS................................... 74 3.12
THEFUTUREOFMETALPOLISHING ............................... 79 REFERENCES
..................................................... 80 4
METALCMPSCIENCE DAVIDSTEIN
.................................................... 85 4.1
INTRODUCTION............................................... 85 4.2
TUNGSTENEXPERIMENTALDATA*CHEMICALANDELECTROCHEMICAL.... 86 4.3
TUNGSTENEXPERIMENTALDATA*ROLEOFSLURRYPARTICLE .......... 97 4.4
CONCLUSIONSONMECHANISMSONWCMP.......................103 4.5
COPPEREXPERIMENTALDATA*CHEMICALANDELECTROCHEMICAL .....104 4.6
COPPERSUMMARY ..........................................118 4.7
CMPREMOVALMODELS......................................119 4.8
TUNGSTENMODELOFPAUL.....................................120 4.9
TUNGSTENMODELOFSTEINETAL................................124 4.10
COPPERMODELOFBABUETAL..................................127 4.11
MODELSUMMARY ...........................................129 4.12
FUTURETRENDS .............................................130 REFERENCES
.....................................................131 5
EQUIPMENTUSEDINCMPPROCESSES THOMASTUCKER
................................................. 133 5.1
CMPTOOLREQUIREMENTS....................................133 5.2
ROTARYCMPTOOLS.........................................138 5.3
ROTARYKINEMATICS .........................................139 5.4
CAROUSELSYSTEMS...........................................142 5.5
ORBITALSYSTEMS............................................143 5.6
LINEARSYSTEMS.............................................146 5.7
MODIFIEDGRINDINGSYSTEMS..................................148 5.8
WEBFORMATTOOLS..........................................149 5.9
ELECTROCHEMICALMECHANICALPLANARIZATION .....................151 5.10
CARRIERTECHNOLOGY.........................................151 5.11
PADCONDITIONING ..........................................155 5.12
ENDPOINTING...............................................158 5.13
SUMMARY..................................................163 REFERENCES
.....................................................163 6
CMPPOLISHINGPADS DAVIDB.JAMES
................................................. 167 6.1
INTRODUCTION...............................................167 6.2
POLYMERREQUIREMENTSFORPOLISHINGPADS .....................167 CONTENTS IX
6.3 BASICSOFPOLYURETHANES.....................................170 6.4
TYPESOFCOMMERCIALLYAVAILABLEPOLISHINGPADS ANDTHEIRMANUFACTURE
.....................................172 6.5
CONTROLOFPOLYURETHANEPADPROPERTIES.......................180 6.6
CONTROLOFPADPROPERTIESTHROUGHPADGEOMETRY..............189 6.7
RELATIONSHIPSBETWEENPADPROPERTIESANDPOLISHINGPERFORMANCE 197 6.8
SLURRYLESSPADTECHNOLOGY...................................207 6.9
FUTURETRENDSINPOLISHINGPADS..............................208 6.10
ACKNOWLEDGEMENTS .........................................210 REFERENCES
.....................................................210 7
FUNDAMENTALSOFCMPSLURRY KARLROBINSON
.................................................. 215 7.1
INTRODUCTION:BASICCOMPONENTSOFCMPSLURRIES...............215 7.2
SURFACESCIENCEANDELECTROCHEMISTRYINCMPSLURRY ...........217 7.3
SLURRYASASUSPENSION......................................222 7.4
SOLIDSCONTENT.............................................232 7.5
SLURRYHANDLING............................................241 7.6
FUTURETRENDSINSLURRY.....................................245 7.7
SUMMARY..................................................246 REFERENCES
.....................................................247 8 CMPCLEANING
JOHNDELARIOS ................................................. 251 8.1
INTRODUCTION...............................................251 8.2
POLISHINGANDTHECONTROLOFCMPDEFECTS....................259 8.3
MECHANICALBRUSHSCRUBBINGFORCMPCLEANING................260 8.4
NON-CONTACTPROCESSESFORCMPCLEANING.....................263 8.5
OTHERCLEANINGTECHNOLOGIES.................................264 8.6
CLEANINGOFOXIDES,W,STI,CU,ANDLOWKMATERIALS...........265 8.7
FUTUREDIRECTIONSFORCMPCLEANING..........................276 8.8
CONCLUSION ................................................277
REFERENCES .....................................................277 9
PATTERNEDWAFEREFFECTS D.BONINGANDD.HETHERINGTON
................................... 283 9.1
INTRODUCTION...............................................283 9.2
PLANARIZATIONTERMINOLOGYANDCHARACTERIZATION................283 9.3
PATTERNDEPENDENCIESINDIELECTRICCMP......................299 9.4
METALCMPPATTERNDEPENDENCIES............................326 REFERENCES
.....................................................344 X CONTENTS 10
INTEGRATIONISSUESOFCMP K.M.ROBINSON,K.DEVRIENDTANDD.R.EVANS
..................... 351 10.1
OXIDECMPINTEGRATION.....................................351 10.2
TUNGSTENCMP.............................................373 10.3
STIINTEGRATION ............................................384 10.4
COPPERDAMASCENEINTEGRATION...............................396 10.5
OTHERAPPLICATIONSOFCMP..................................407 REFERENCES
.....................................................412
APPENDIX:POURBAIXDIAGRAMS ................................ 419
REFERENCES .....................................................425
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| illustrated | Illustrated |
| indexdate | 2024-07-09T19:23:02Z |
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| isbn | 3540431810 |
| language | English |
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| physical | X, 425 S. Ill., graph. Darst. |
| publishDate | 2004 |
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| series | Springer series in materials science |
| series2 | Springer series in materials science Physics and astronomy online library |
| spelling | Chemical mechanical planarization of semiconductor materials M. R. Oliver (ed.) Berlin [u.a.] Springer 2004 X, 425 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 69 Physics and astronomy online library Literaturangaben Chemical mechanical planarization Grinding and polishing Semiconductors Materials Chemisches Polieren (DE-588)4227250-6 gnd rswk-swf Halbleiterwerkstoff (DE-588)4158817-4 gnd rswk-swf Halbleiterwerkstoff (DE-588)4158817-4 s Chemisches Polieren (DE-588)4227250-6 s DE-604 Oliver, Michael R. Sonstige oth Springer series in materials science 69 (DE-604)BV000683335 69 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010736818&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Chemical mechanical planarization of semiconductor materials Springer series in materials science Chemical mechanical planarization Grinding and polishing Semiconductors Materials Chemisches Polieren (DE-588)4227250-6 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd |
| subject_GND | (DE-588)4227250-6 (DE-588)4158817-4 |
| title | Chemical mechanical planarization of semiconductor materials |
| title_auth | Chemical mechanical planarization of semiconductor materials |
| title_exact_search | Chemical mechanical planarization of semiconductor materials |
| title_full | Chemical mechanical planarization of semiconductor materials M. R. Oliver (ed.) |
| title_fullStr | Chemical mechanical planarization of semiconductor materials M. R. Oliver (ed.) |
| title_full_unstemmed | Chemical mechanical planarization of semiconductor materials M. R. Oliver (ed.) |
| title_short | Chemical mechanical planarization of semiconductor materials |
| title_sort | chemical mechanical planarization of semiconductor materials |
| topic | Chemical mechanical planarization Grinding and polishing Semiconductors Materials Chemisches Polieren (DE-588)4227250-6 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd |
| topic_facet | Chemical mechanical planarization Grinding and polishing Semiconductors Materials Chemisches Polieren Halbleiterwerkstoff |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010736818&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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