Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Timişoara
West Univ. of Timişoara, Dep. of Mathematics
2001
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Schriftenreihe: | Preprint SDE
15 |
Beschreibung: | 10 S. graph. Darst. |
Internformat
MARC
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Datensatz im Suchindex
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id | DE-604.BV017705509 |
illustrated | Illustrated |
indexdate | 2024-07-09T19:20:59Z |
institution | BVB |
language | English |
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oclc_num | 551944149 |
open_access_boolean | |
owner | DE-29T |
owner_facet | DE-29T |
physical | 10 S. graph. Darst. |
publishDate | 2001 |
publishDateSearch | 2001 |
publishDateSort | 2001 |
publisher | West Univ. of Timişoara, Dep. of Mathematics |
record_format | marc |
series | Preprint SDE |
series2 | Preprint SDE |
spelling | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis L. Brăescu ... Timişoara West Univ. of Timişoara, Dep. of Mathematics 2001 10 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Preprint SDE 15 Brăescu, L. Sonstige oth Preprint SDE 15 (DE-604)BV017705307 15 |
spellingShingle | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis Preprint SDE |
title | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis |
title_auth | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis |
title_exact_search | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis |
title_full | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis L. Brăescu ... |
title_fullStr | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis L. Brăescu ... |
title_full_unstemmed | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis L. Brăescu ... |
title_short | Model based simulation of the control of the half-thickness of a silicon sheet grown from the melt in a vacuum by EFG method, through the change of the melt temperature at the meniscus basis |
title_sort | model based simulation of the control of the half thickness of a silicon sheet grown from the melt in a vacuum by efg method through the change of the melt temperature at the meniscus basis |
volume_link | (DE-604)BV017705307 |
work_keys_str_mv | AT braescul modelbasedsimulationofthecontrolofthehalfthicknessofasiliconsheetgrownfromthemeltinavacuumbyefgmethodthroughthechangeofthemelttemperatureatthemeniscusbasis |