Quantum dots and nanowires:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Stevenson Ranch, Calif.
American Scientific Publ.
2003
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIX, 423 S. Ill., graph. Darst. |
| ISBN: | 1588830136 |
Internformat
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| 650 | 4 | |a Points quantiques | |
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| 650 | 4 | |a Électronique quantique | |
| 650 | 4 | |a Nanowires | |
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Datensatz im Suchindex
| _version_ | 1804130343772487680 |
|---|---|
| adam_text | QUANTUM DOTS AND NANOWIRES EDITED BY SUPRIYO BANDYOPADHYAY VIRGINIA
COMMONWEALTH UNIVERSITY RICHMOND, VIRGINIA, USA HARI SINGH NALWA
FORMERLY AT HITACHI RESEARCH LABORATORY HITACHI LTD., IBARAKI, JAPAN
AMERICAN SCIENTIFIC PUBLISHERS 25650 NORTH LEWIS WAY STEVENSON RANCH,
CALIFORNIA 91381-1439, USA CONTENTS LIST OF CONTRIBUTORS XV ABOUT THE
EDITORS XVII CHAPTER 1. QUANTUM DOTS: ARTIFICIAL ATOMS AND MOLECULES
PHILIPPE MATAGNE, JEAN-PIERRE LEBURTON 1. INTRODUCTION 2 2. QUANTUM DOTS
3 2.1. PLANAR QUANTUM DOTS 3 2.2. VERTICAI QUANTUM DOTS 4 2.3.
SELF-ASSEMBLED QUANTUM DOTS 5 3. COULOMB BLOCKADE EFFECT AND
SINGLE-ELECTRON TUNNELING 5 3.1. THE COULOMB BLOCKADE REGIME 6 3.2.
QUANTUM DOT STATISTICS 7 3.3. THE SINGLE-ELECTRON TRANSISTOR 9 4.
TARUCHA S EXPERIMENT 13 5. THE MANY-BODY HAMILTONIAN OF ARTIFICIAL ATOMS
14 5.1. SINGLE-PARTICLE HAMILTONIAN AND SHELL STRUCTURES 15 5.2.
HARTREE-FOCK APPROXIMATION AND HUND S RULES 16 6. QUANTUM DOTS AS
ELECTRONIC DEVICES 19 6.1. POTENTIAL MODEL 20 6.2. 2D EIGENSTATES
ANALYSIS 23 7. FUELL SCALE SIMULATION OF QUANTUM DOTS 23 7.1. THE LOCAL
SPIN DENSITY APPROXIMATION HAMILTONIAN 24 7.2. ELECTRON EQUILIBRIUM
STATISTICS 25 7.3. BULK REGION 25 7.4. BOUNDARY CONDITIONS 27 7.5.
CONDUCTION BAND PROFILES 28 7.6. ELECTRONIC STRUCTURE OF VERTICAI
QUANTUM DOTS 31 7.7. SINGLC-ELCCTRON CHARGING 32 7.8. COMPUTATION OF THE
ADDITION ENERGY 33 7.9. ELECTRON DENSITIES IN VERTICAI QUANTUM DOTS 34
7.10. SHELL CHARGING ANALYSIS 36 7.11. SPIN SEQUENCE IN VERTICAI QUANTUM
DOT CHARGING 38 7.12. MAGNETIC FTELD ANALYSIS 40 8. ASYMMETRICAL SINGLE
QUANTUM DOTS 44 8.1. RECTANGULAR QUANTUM DOTS 44 8.2. ELECTROSTATICALLY
DEFORMABLE QUANTUM DOTS 48 9. DOUBLE QUANTUM DOTS*ARTIFICIAL MOLECULES
55 9.1. DOUBLE QUANTUM DOT STRUCTURE 55 9.2. ELECTRONIC STRUCTURE AND
CHARGING EFFECT IN DOUBLE QUANTUM DOTS 56 ACKNOWTCDGMENTS 63 REFERENCES
63 CHAPTER 2. QUANTUM DOT ATOMS, MOLECULES, AND SUPERLATTICES HIROYUKI
TAMARA, HIDEAKI TAKAYANAGI, KENJI SHIRAISHI 1. INTRODUCTION 68 2. SINGLE
QUANTUM DOT (ARTIFICIAL ATOM) 68 VII VUEI CONTENTS 2.1. SINGLE-EIECTRON
TUNNELING IN SEMICONDUCTOR STRUCTURES 68 2.2. CLASSICAL MODEL OF THE
SINGLE-EIECTRON CHARGING EFFECT 70 2.3. CONSTANT TNTERACTION MODE! WITH
EXCHANGE TERM 73 2.4. QUANTUM DOT IN PARABOLIC POTENTIAL 74 2.5.
SPIN-BLOCKADE EFFECT 78 2.6. KONDO EFFECT IN QUANTUM DOTS 79 2.7.
STATISTICS OF COULOMB BLOCKADE PEAK SPACINGS 84 3. COUPLED QUANTUM DOTS
(ARTIFICIAL MOLECULE) 87 3.1. QUANTUM DOT MOLECULES 87 3.2. ELECTRON
CORRELATION IN THE TWO-SITE HUBBARD MODEL 88 3.3. FERROMAGNETIC STATE IN
QUANTUM DOT MOLECULES 89 3.4. MAGNETIC FIELD EFFECT IN QUANTUM DOT
MOLECULES 91 4. QUANTUM DOT ARRAYS 93 4.1. QUANTUM DOT CELLULAR
AUTOMATON 93 4.2. QUANTUM DOT SUPERLATTICES 94 4.3. FIAT-BAND
FERROMAGNETISM 96 4.4. QUANTUM WIRC GEOMETRY FOR QDSLS 99 4.5. MAGNETIC
FIELD EFFECTS IN QDSLS 100 5. CONCLUDING REMARKS AND FUTURE DIRECTIONS
104 ACKNOWLEDGMENTS 104 REFERENCES 105 CHAPTER 3. SELF-ASSEMBLED QUANTUM
DOTS IN HIGH ELECTRIC FIELD A. BABINSKI 1. INTRODUCTION 113 2.
ELECTRONIC PROPERTIES OF SELF-ASSEMBLED QUANTUM DOTS 114 3. THE EFFECT
OF ELECTRIC FIELD ON SELF-ASSEMBLED QUANTUM DOTS 118 3.1. QUANTUM
CONFINED STARK EFFECT 118 3.2. MECHANISMS OF CARRIER ESCAPE FROM THE
QUANTUM DOTS 123 4. BIAS-CONTROLLED CARRIER OCCUPATION OF SELF-ASSEMBLED
QUANTUM DOTS 127 5. CARRIER OCCUPATION-DEPENDENT OPTICAL PROPERTIES OF
THE SELF-ASSEMBLED QUANTUM DOTS 132 6. CONCLUDING REMARKS 135 REFERENCES
135 CHAPTER 4. SYNTHESIS OF NANOWIRES USING POROUS ALUMINA LATIKA MENON
1. INTRODUCTION 142 2. MCTHODS OF NANOSYNTHESIS 143 3. SYNTHESIS OF
POROUS ALUMINA 144 3.1. FILECTROPOLISHING AI 145 3.2. ANODIZATION OF AI
146 3.3. THEORETICAL MODELING OF PORE GROWTH 147 3.4. MICROSCOPE IMAGES
OF POROUS ALUMINA TEMPLATES 150 3.5. INFLUENCE OF CHANGE IN ANODIZATION
VOLTAGE DURING PORE FORMATION 152 3.6. SYNTHESIS OF PERIODIC POROUS
ALUMINA TEMPLATES 153 4. OPTICAL PROPERTIES OF POROUS ALUMINA 155
CONTENTS IX 4.1. PHOTONIC CRYSTALS 155 4.2. PHOTOLUMINESCENCE 155 5.
METHODS OF NANOSYNTHESIS USING POROUS ALUMINA 156 5.1. AC
ELECTRODEPOSITION 156 5.2. DC ELECTRODEPOSITION 157 5.3. PRESSURE
INJECTION METHOD 158 5.4. POROUS ALUMINA AS EVAPORATION MASK 158 5.5.
POROUS ALUMINA ON SI 159 5.6. REPLICATION METHOD 160 6. MAGNETIC
NANOWIRES 161 6.1. FE NANOWIRES 164 6.2. CO NANOWIRES 168 6.3. NI
NANOWIRES 168 6.4. IMPROVEMENT IN UNIFORMITY OF WIRE LENGTHS 169 6.5.
NANOWIRES OF MAGNETIC ALLOYS 170 6.6. MAGNETIC MULTILAYER NANOWIRES 173
7. SEMICONDUCTOR NANOWIRES 174 7.1. METHODS OF ELECTRODEPOSITION 174
7.2. OPTICAL MEASUREMENTS 175 7.3. ELECTRICAL MEASUREMENTS 176 7.4.
COULOMB BLOCKADE AND SINGLE ELECTRON TUNNELING 177 7.5. SEMICONDUCTOR
ALIOYS AND HETEROSTRUCTURES 178 8. SUPERCONDUCTING NANOWIRES 179 8.1. PB
NANOWIRES 180 8.2. PINNING EFFECT IN SUPERCONDUCTORS 180 9. OTHER
METALLIC NANOWIRES IN POROUS ALUMINA 181 9.1. BI NANOWIRES 181 9.2. AU
NANOWIRES 183 10. CONDUCTIVE POLYMERS IN POROUS ALUMINA 184 11. CARBON
NANOTUBES IN POROUS ALUMINA 184 11.1. GROWTH OF CARBON NANOTUBES IN
POROUS ALUMINA 185 11.2. FIELD EMISSION CHARACTERISTICS 186 11.3.
Y-JUNETION CARBON NANOTUBES 187 12. CONCLUSION 187 ACKNOWLEDGMENTS 187
REFERENCES 187 CHAPTER 5. SYNTHESIS, STRUCTURE, AND GROWTH MECHANISM OF
OXIDE NANOWIRES, NANOTUBES, AND NANOBELTS ZHENG WEI PAN, ZU RONG DAI,
ZHONG LIN WANG 1. INTRODUCTION 193 2. SYNTHESIS METHOD 194 2.1. VAPOR
PHASE EVAPORATION 194 2.2. SOL-GEL METHOD 195 2.3. TEMPLATE METHOD 200
2.4. OTHER METHODS 201 3. ONE-DIMENSIONAL OXIDE NANOSTRUCTURES 202 3.1.
OXIDE NANOWIRES 202 3.2. OXIDE NANOTUBES 209 3.3. OXIDE NANOBELTS 210 X
CONTENTS 4. GROWTH MECHANISM OF ONE-DIMENSIONAL OXIDE NANOSTRUCTURES 213
4.1. VAPOR-LIQUID-SOLID GROWTH MECHANISM 214 4.2. VAPOR-SOTID GROWTH
MECHANISM 215 4.3. SUMMARY 216 REFERENCES 216 CHAPTER 6. NANOWIRES BY
ELECTRON-BEAM- INDUCED DEPOSITION AND BIOMOLECULE TEMPLATING WOLFGANG
FRITZSCHE 1. INLRODUCTION 220 2. ELECTRON-BEAM-INDUCED DEPOSITION
TECHNIQUES FOR SINGLE-MOLECULE CHARACTERIZATION 221 2.1. WIRING OF
SINGLE MOSECULES 221 2.2. TECHNOLOGIES FOR WIRING 222 2.3.
ELECTRON-BEAM-INDUCED DEPOSITION 223 2.4. ELECTRON-BEAM-LNDUCCD
DEPOSITION LINES FOR WIRING 223 2.5. TRANSFER OF EBD LINES INTO GOLD
STRUCTURES 225 2.6. MICROTUBULES AS MODEL SYSTEM 225 2.7. WIRING OF
MICROTUBULES BY EBD NANOELECTRODES 227 2.8. DIRECT-WRITING EBD APPROACH
228 2.9. PROPERTIES OF EBD MATERIAL 228 3. NANOWIRES BY MOLECULAR
TEMPLATING 230 3.1. ACCESSING MOLECULAR DIMENSIONS 230 3.2. MOLECULAR
MASKING 230 3.3. MICROTUBULC-BASED MOLECULAR MASKING 231 3.4.
METALLIZATION OF MOLECULAR TEMPLATES 232 3.5. IMMOBILIZATION OF
SOLUTION-METALLIZED MOLECULES 233 3.6. ORIENTCD MOLECULAR TMMOBILIZATION
BY ALIGNMCNT IN THE LIQUID 234 3.7. DEFMED IMMOBILIZATION BY SPECIFIC
BINDING 235 3.8. DNA-DNA INTERACTION IN NANOTECHNOLOGY 235 3.9.
CONDUCTIVITY OF DNA 236 4. OUTLOOK . 238 ACKNOWLEDGMENTS 238 REFERENCES
238 CHAPTER 7. RAMAN SPECTROSCOPY ON II-VI SEMICONDUCTOR INTERFACES,
QUANTUM DOTS, AND QUANTUM WIRES V. WAGNER, J. GEURTS, W. KIEFER 1.
INTRODUCTION 242 2. FUNDAMCNTALS OF RAMAN SPECTROSCOPY 243 2.1.
SUSCEPTIBILITY THEORY 244 2.2. MICROSCOPIC THEORY 245 2.3. SCATTCRING
MECHANISMS AND RESONANCE 247 3. EXPCRIMENTAL SETUP 248 3.1. RAMAN
SPCCTROMETER COMPONENTS 248 3.2. MICRO-RAMAN SPECTROSCOPY 250 CONTENTS
XI 3.3. ONLINE GROWTH MONITORING 251 4. ANALYSIS OF CRYSTAL LATTICE
PROPERTIES 253 4.1. CRYSTALLINE PERFECTION AND ORIENTATION 254 4.2.
COMPOSITION OF MIXED COMPOUNDS 257 4.3. BIAXIAL STRAIN DUE TO LATTICE
MISMATCH 260 4.4. COUPLED PLASMON-PHONON MODES IN DOPED MATERIALS 263 5.
EFFECTS OF SIZE RCSTRICTION BY INTERFACES 265 5.1. SINGLE INTERFACES AND
SURFAEES 266 5.2. (MULTI)-QUANTUM WELLS AND SUPERLATTICES 275 6.
NANOSTRUCTURES: QUANTUM WIRES AND QUANTUM DOTS 281 6.1. CHEMICALLY
PRODUCED DOTS 281 6.2. LITHOGRAPHICALLY PATTERNED WIRES AND DOTS 287
6.3. SELF-ORGANIZED DOTS 292 7. SUMMARY 296 ACKNOWIEDGMENTS 298
REFERENCES 298 CHAPTER 8. THERMAL TRANSPORT IN SEMICONDUCTOR
NANOSTRUCTURES ALEXANDER A. BALANDIN, JIE ZOU 1. TNTRODUCTION 303 1.1.
DEVICE DOWNSCALING AND THE PROBLEM OF HEAT DISSIPATION 304 1.2. THERMAL
MANAGEMENT OF NANOSCALE ELECTRONIC DEVICES 305 1.3. NANOSTRUCTURES FOR
THERMOELECTRIC APPLICATIONS 308 2. CONFINED ACOUSTIC PHONON TRANSPORT
309 2.1. PHONON TRANSPORT REGIMES 310 2.2. CONFINED PHONON DISPERSION
AND GROUP VELOCITIES 311 2.3. SCATTERING PROCESSES AND RELAXATION RATES
319 2.4. BOLTZMANN TRANSPORT EQUATION 321 2.5. CALCULATION OF THE
LATTICE THERMAL CONDUCTIVITY 323 3. RAINAN SPECTROSCOPY OF ACOUSTIC
PLIONONS IN NANOSTRUCLURES 327 3.1. PHONON CONFMEMENT IN ULTRATHIN
SILICON LAYERS 327 3.2. FOLDED PHONONS IN SI/GE THERMOELECTRIC
SUPERLATTICES 329 4. CONCLUSIONS 331 ACKNOWIEDGMENTS 332 REFERENCES 332
CHAPTER 9. DEVICE AND CIRCUIT APPLICATIONS OF ELECTROCHEMICALLY
SELF-ASSEMBLED QUANTUM DOTS AND WIRES S. BANDYOPADHYAY, N. KOUKLIN, L.
MENON 1. INTRODUCTION 336 2. ELECTROCHEMICAL SC!F-ASSEMBLY 336 2.1.
ANODIZATION 337 2.2. ELECTRODEPOSITING A METAL 337 2.3.
ELECTRODEPOSITING A COMPOUND SEMICONDUCTOR 338 3. NANOMAGNETIC
PROPERTIES: APPLICATIONS IN NONVOLATILE DATA STORAGE 340 XII CONTENTS
3.1. MAGNETIC VISCOSITY 341 3.2. INTERPARTICLE TNTERACTION 343 4.
ELECTRONIC BISTABILITY IN QUANTUM DOTS: APPLICATIONS IN NONVOLATILE RAN
DORN ACCESS MEMORY 344 4.1. CURRENT-VOLTAGC MEASUREMENTS 345 4.2.
ELECTRONIC BISTABILITY 345 4.3. STATIC NONVOLATILE RANDOM ACCESS MEMORY
347 4.4. ORIGIN OF BISTABILITY 347 5. CAPACITANCE-VOLTAGE SPECTROSCOPY
349 5.1. QUANTUM DOT FLASH MEMORY 349 5.2. CAPACITANCE-VOILAGE
MEASUREMENTS 350 6. ROOM-TEMPERATURE SINGLE ELECTRONICS 351 6.1.
CURRENT-VOLTAGC CHARACTERISTICS: ROOM TEMPERATURE COULOMB BLOCKADE 352
6.2. COULOMB STAIRCASE 353 7. PHOTORESISTIVE EFFECT IN QUANTUM WIRES:
NOVEL INVERSC PHOTODETECTORS 355 7.1. PHOTORESISTIVE EFFECT 356 7.2.
ORIGIN OF PHOTORESISTIVITY 356 8. ELECTROCHEMICALLY SELF-ASSEMBLED
QUANTUM LOGIC GATES 359 8.1. PROPOSED ARCHITECTURE 359 8.2. PRINCIPAL
RESEARCH ISSUES 360 8.3. ELECTRICAL CONNECTIONS 362 9. A SELF-ASSEMBLED
NEURAL NETWORK BASED ON QUANTUM DOTS 362 9.1. NANOELECTRONIC
ARCHITECTURES 363 9.2. SOMC NANOELECTRONIC LOGIC DEVICES AND THEIR
FLAWS 363 9.3. QUANTUM DOT BASED ALTERNATIVES TO LOGIC CIRCUITS 366 9.4.
SE!F-ASSEMBLING A NEURAL NETWORK 368 10. CONCLUSION 370 ACKNOWLEDGMENTS
370 REFERENCES 370 CHAPTER 10. QUANTUM DOT STRUCTURES: RAMAN AND
INFRARED SPECTROSCOPY ALEXANDER MILEKHIN, DMITRI A. TENNE, DIETRICH R.
T. ZAHN 1. INTRODUCTION 375 2. PHONONS IN SUPERLATTICES 377 2.1.
LINEAR-CHAIN MODEL 377 2.2. FOLDED ACOUSTIC PHONONS 380 2.3. CONFINEMENT
OF OPTICAL PHONONS 381 2.4. STRAIN 381 2.5. INTERFACE PHONONS 382 3.
RAMAN SPECTROSCOPY 383 3.1. BASIC PRINCIPLES OF RAMAN SCATTERING IN
CRYSTALS 383 3.2. RAMAN SELECTION RULES 386 3.3. RAMAN SCATTERING BY
PHONONS IN NANOSTRUCTURES 387 3.4. BASICS OF IR SPECTROSCOPY 389 4.
PHONONS IN PERIODICAL STRUCTURCS WITH QDS 392 4.1. ACOUSTIC SPECTRAL
REGION 392 4.2. OPTICAL PHONON REGION 398 CONTENTS XIII 4.3. INTERFACE
PHONONS IN QDS 412 5. CONCLUSION 415 ACKNOWLEDGMENTS 416 REFERENCES 416
INDEX 421
|
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| publisher | American Scientific Publ. |
| record_format | marc |
| spelling | Quantum dots and nanowires ed. by Supriyo Bandyopadhyay ... Stevenson Ranch, Calif. American Scientific Publ. 2003 XIX, 423 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Nanofils Nanostructures Points quantiques Semiconducteurs Électronique quantique Nanowires Quantum dots Quantum electronics Quantendraht (DE-588)4263397-7 gnd rswk-swf Quantenpunkt (DE-588)4263396-5 gnd rswk-swf Quantenpunkt (DE-588)4263396-5 s DE-604 Quantendraht (DE-588)4263397-7 s Bandyopadhyay, Supriyo Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010577650&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Quantum dots and nanowires Nanofils Nanostructures Points quantiques Semiconducteurs Électronique quantique Nanowires Quantum dots Quantum electronics Quantendraht (DE-588)4263397-7 gnd Quantenpunkt (DE-588)4263396-5 gnd |
| subject_GND | (DE-588)4263397-7 (DE-588)4263396-5 |
| title | Quantum dots and nanowires |
| title_auth | Quantum dots and nanowires |
| title_exact_search | Quantum dots and nanowires |
| title_full | Quantum dots and nanowires ed. by Supriyo Bandyopadhyay ... |
| title_fullStr | Quantum dots and nanowires ed. by Supriyo Bandyopadhyay ... |
| title_full_unstemmed | Quantum dots and nanowires ed. by Supriyo Bandyopadhyay ... |
| title_short | Quantum dots and nanowires |
| title_sort | quantum dots and nanowires |
| topic | Nanofils Nanostructures Points quantiques Semiconducteurs Électronique quantique Nanowires Quantum dots Quantum electronics Quantendraht (DE-588)4263397-7 gnd Quantenpunkt (DE-588)4263396-5 gnd |
| topic_facet | Nanofils Nanostructures Points quantiques Semiconducteurs Électronique quantique Nanowires Quantum dots Quantum electronics Quantendraht Quantenpunkt |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010577650&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT bandyopadhyaysupriyo quantumdotsandnanowires |