MOSFET models for SPICE simulation including BSIM3v3 and BSIM4:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York
Wiley
2001
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XII, 588 S. |
| ISBN: | 0471396974 |
Internformat
MARC
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| 245 | 1 | 0 | |a MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 |c William Liu |
| 264 | 1 | |a New York |b Wiley |c 2001 | |
| 300 | |a XII, 588 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
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| 650 | 0 | 7 | |a SPICE |g Programm |0 (DE-588)4237438-8 |2 gnd |9 rswk-swf |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-010569935 | |
Datensatz im Suchindex
| _version_ | 1813079384859344896 |
|---|---|
| adam_text |
IMAGE 1
MOSFET MODELS
FOR SPICE SIMULATION, INCLUDING BSIM3V3 AND BSIM4
WILLIAM LIU TEXAS INSTRUMENTS
A WILEY-INTERSCIENCE PUBLICATION
JOHN WILEY & SONS, INC.
NEW YORK * CHICHESTER * WEINHEIM * BRISBANE * SINGAPORE * TORONTO
IMAGE 2
CONTENTS
PREFACE
1 MODELING JARGONS
1.1 SPICE SIMULATOR AND SPICE MODEL, 1
1.2 NUMERICAL ITERATION AND CONVERGENCE, 8
1.3 DIGITAL VS. ANALOG MODELS, 11
1.4 SMOOTHING FUNCTION AND SINGLE EQUATION, 27
1.5 CHAIN RULE, 36
1.6 QUASI-STATIC APPROXIMATION, 38
1.7 TERMINAL CHARGES AND CHARGE PARTITION, 44
1.8 CHARGE CONSERVATION, 50
1.9 NON-QUASI-STATIC AND QUASI-STATIC -PARAMETERS, 62
1.10 SOURCE-REFERENCING AND INVERSE MODELING, 70
1.11 PHYSICAL MODEL AND TABLE-LOOKUP MODEL, 77
1.12 SCALABLE MODEL AND DEVICE BINNING, 86
REFERENCES AND NOTES, 98
IMAGE 3
VIII CONTENTS
2 BASIC FACTS ABOUT BSIM3 101
2.1 WHAT IS AND WHAT'S NOT IMPLEMENTED IN BSIM3, 101
2.2 DC EQUIVALENT CIRCUIT MODEL, 104
2.3 BSIM3'S^-PARAMETERS, 116
2.4 LARGE-SIGNAL EQUIVALENT CIRCUIT, 122
2.5 SMALL-SIGNAL MODEL, 133
2.6 NOISE EQUIVALENT CIRCUIT, 140
2.7 SPECIAL OPERATING CONDITIONS: V DS 0, V BS 0, V GS 0, OR V BD
0, 149
REFERENCES AND NOTES, 156
3 BSIM3 PARAMETERS 158
3.1 LIST OF PARAMETERS ACCORDING TO FUNCTION, 158
3.2 ALPHABETICAL GLOSSARY OF BSIM3 PARAMETERS, 162
3.3 FLOW DIAGRAM OF SPICE SIMULATION, 275
REFERENCES AND NOTES, 283
4 IMPROVABLE AREAS OF BSIM3 284
4.1 LACK OF ROBUST NON-QUASI-STATIC MODELS: TRANSIENT ANALYSIS, 285
4.2 PROBLEM WITH THE 40/60 PARTITION: THE "KILLER NOR GATE", 299
4.3 LACK OF CHANNEL RESISTANCE (NQS EFFECT; SMALL-SIGNAL ANALYSIS), 303
4.4 INCORRECT TRANSCONDUCTANCE DEPENDENCY ON FREQUENCY, 313
4.5 LACK OF GATE RESISTANCE (AND ASSOCIATED NOISE), 316
4.6 LACK OF SUBSTRATE DISTRIBUTED RESISTANCE (AND ASSOCIATED NOISE), 323
4.7 INCORRECT SOURCE/DRAIN ASYMMETRY AT V DS = 0, 329
4.8 INCORRECT C GB BEHAVIORS, 333
4.9 CAPACITANCES WITH WRONG SIGNS, 339
4.10 C GG FIT AND OTHER CAPACITANCE ISSUES, 341
4.11 INSUFFICIENT NOISE MODELING (NO EXCESS SHORT-CHANNEL THERMAL
NOISE), 356
4.12 INSUFFICIENT NOISE MODELING (NO CHANNEL-INDUCED GATE NOISE), 362
4.13 INCORRECT NOISE FIGURE BEHAVIOR, 366
IMAGE 4
CONTENTS IX
4.14 INCONSISTENT INPUT-REFERRED NOISE BEHAVIOR, 375
4.15 POSSIBLE NEGATIVE TRANSCONDUCTANCES, 376
4.16 LACK OF GIDL (GATE-INDUCED DRAIN LEAKAGE) CURRENT, 382
4.17 INCORRECT SUBTHRESHOLD BEHAVIORS, 387
4.18 THRESHOLD VOLTAGE ROLLUP, 390
4.19 PROBLEMS ASSOCIATED WITH A NONZERO RDSW, 391
4.20 OTHER NUISANCES, 392
REFERENCES AND NOTES, 396
5. IMPROVEMENTS IN BSIM4 399
5.1 INTRODUCTION, 399
5.2 PHYSICAL AND ELECTRICAL OXIDE THICKNESSES, 400
5.3 STRONG INVERSION POTENTIAL FOR VERTICAL NONUNIFORM DOPING PROFILE,
402
5.4 THRESHOLD VOLTAGE MODIFICATIONS, 403
5.5 ^GSR.EFF I N MODERATE INVERSION, 408
5.6 DRAIN CONDUCTANCE MODEL, 409
5.7 MOBILITY MODEL, 412
5.8 DIODE CAPACITANCE, 414
5.9 DIODE BREAKDOWN, 417
5.10 GIDL (GATE-INDUCED DRAIN LEAKAGE) CURRENT, 425
5.11 BIAS-DEPENDENT DRAIN-SOURCE RESISTANCE, 427
5.12 GATE RESISTANCE, 431
5.13 SUBSTRATE RESISTANCE, 434
5.14 OVERLAP CAPACITANCE, 435
5.15 THERMAL NOISE MODELS, 436
5.16 FLICKER NOISE MODEL, 450
5.17 NON-QUASI-STATIC AC MODEL, 451
5.18 GATE TUNNELING CURRENTS, 459
5.19 LAYOUT-DEPENDENT PARASITICS, 465
REFERENCES AND NOTES, 472
IMAGE 5
X CONTENTS
APPENDIXES 473
A BSIM3 EQUATIONS, 473
B CAPACITANCES AND CHARGES FOR ALL BIAS CONDITIONS, 507
C NON-QUASI-STATIC ^-PARAMETERS, 510
D FRINGING CAPACITANCE, 515
E BSIM3 NON-QUASI-STATIC MODELING, 519
F NOISE FIGURE, 522
G BSIM4 EQUATIONS, 528
INDEX 583 |
| any_adam_object | 1 |
| author | Liu, William |
| author_facet | Liu, William |
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| author_sort | Liu, William |
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| dewey-full | 621.38150285 621.3815/31 |
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| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.38150285 621.3815/31 |
| dewey-sort | 3621.38150285 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV017561270 |
| illustrated | Not Illustrated |
| indexdate | 2024-10-16T14:00:42Z |
| institution | BVB |
| isbn | 0471396974 |
| language | English |
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| oclc_num | 248051917 |
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| owner_facet | DE-29T |
| physical | XII, 588 S. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Wiley |
| record_format | marc |
| spelling | Liu, William Verfasser aut MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 William Liu New York Wiley 2001 XII, 588 S. txt rdacontent n rdamedia nc rdacarrier SPICE (Computer file) Electronic circuit design Integrated circuits Design and construction SPICE Programm (DE-588)4237438-8 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf SPICE Programm (DE-588)4237438-8 s MOS-FET (DE-588)4207266-9 s DE-604 Erscheint auch als Online-Ausgabe 978-0-470-54718-2 (DE-604)BV046418333 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010569935&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Liu, William MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 SPICE (Computer file) Electronic circuit design Integrated circuits Design and construction SPICE Programm (DE-588)4237438-8 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4237438-8 (DE-588)4207266-9 |
| title | MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 |
| title_auth | MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 |
| title_exact_search | MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 |
| title_full | MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 William Liu |
| title_fullStr | MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 William Liu |
| title_full_unstemmed | MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 William Liu |
| title_short | MOSFET models for SPICE simulation including BSIM3v3 and BSIM4 |
| title_sort | mosfet models for spice simulation including bsim3v3 and bsim4 |
| topic | SPICE (Computer file) Electronic circuit design Integrated circuits Design and construction SPICE Programm (DE-588)4237438-8 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | SPICE (Computer file) Electronic circuit design Integrated circuits Design and construction SPICE Programm MOS-FET |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010569935&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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