Analysis and simulation of heterostructure devices:
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Book |
| Language: | German |
| Published: |
Wien [u.a.]
Springer
2004
|
| Series: | Computational microelectronics
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XX, 289 S. |
| ISBN: | 3211405372 |
Staff View
MARC
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| 245 | 1 | 0 | |a Analysis and simulation of heterostructure devices |c Vassil Palankovski ; Rüdiger Quay |
| 264 | 1 | |a Wien [u.a.] |b Springer |c 2004 | |
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| 490 | 0 | |a Computational microelectronics | |
| 650 | 4 | |a Electronic apparatus and appliances | |
| 650 | 4 | |a Heterostructures | |
| 650 | 4 | |a Semiconductors | |
| 650 | 0 | 7 | |a Heterostruktur-Bauelement |0 (DE-588)4236378-0 |2 gnd |9 rswk-swf |
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Record in the Search Index
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|---|---|
| adam_text | VASSIL PALANKOVSKI RIIDIGER QUAY ANALYSIS AND SIMULATION OF
HETEROSTRUCTURE DEVICES SPRINGERWIENNEWYORK CONTENTS LIST OF ACRONYMS X
LIST OF SYMBOLS XII 1. INTRODUCTION 1 2. STATE-OF-THE-ART OF MATERIALS,
DEVICE MODELING, AND RF DE- VICES 4 2.1 STATE-OF-THE-ART OF
HETEROSTRUCTURE RF DEVICE MODELING 4 2.1.1 SEMICONDUCTOR MATERIAL
ASPECTS 4 2.1.2 MODELING CONCEPT 7 2.1.3 INTERPOLATION SCHEMES 8 2.1.4
THE EFFECT OF STRAIN AND ANISOTROPY 9 2.1.5 NUMERICAL MODELING 10 2.1.6
MIXED-MODE SIMULATION 15 2.2 STATE-OF-THE-ART OF HETEROSTRUCTURE DEVICES
AND OPTIMIZATION PO- TENTIALS 16 2.2.1 HETEROJUNCTION BIPOLAR
TRANSISTORS (HBTS) 16 2.2.2 HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS)
21 2.2.3 NOVEL DEVICES 24 3. PHYSICAL MODELS 26 3.1 SETS OF PARTIAL
DIFFERENTIAL EQUATIONS 26 3.1.1 BASIC SEMICONDUCTOR EQUATIONS 26 3.1.2
THE DRIFT-DIFFUSION TRANSPORT MODEL 27 3.1.3 THE HYDRODYNAMIC TRANSPORT
MODEL 27 3.1.4 EXTENSIONS OF THE HYDRODYNAMIC TRANSPORT MODEL 28 3.1.5
THE LATTICE HEAT FLOW EQUATION 29 3.1.6 THE INSULATOR EQUATIONS 30 3.1.7
BOUNDARY AND INTERFACE CONDITIONS 30 3.2 LATTICE AND THERMAL PROPERTIES
40 3.2.1 PERMITTIVITY 40 3.2.2 MASS DENSITY 40 VIII CONTENTS 3.2.3
THERMAL CONDUCTIVITY 41 3.2.4 SPECIFIC HEAT 47 3.3 BAND STRUCTURE 49
3.3.1 BANDGAP ENERGY 49 3.3.2 BANDGAP OFFSETS 60 3.3.3 BANDGAP NARROWING
63 3.3.4 EFFECTIVE CARRIER MASS 70 3.3.5 EFFECTIVE DENSITY OF STATES 74
3.4 CARRIER MOBILITY 76 3.4.1 LATTICE MOBILITY 76 3.4.2 IONIZED IMPURITY
SCATTERING 78 3.4.3 SURFACE SCATTERING 89 3.4.4 SEMICONDUCTOR ALLOYS 90
3.4.5 HIGH-FIELD MOBILITY MODELS FOR DD EQUATIONS 98 3.4.6 HIGH-FIELD
MOBILITY MODELS FOR HD EQUATIONS 101 3.4.7 SATURATION VELOCITY 103 3.5
ENERGY AND MOMENTUM RELAXATION 109 3.5.1 MODELING METHODOLOGY 110 3.5.2
RELAXATION TIME MODEL 112 3.6 GENERATION AND RECOMBINATION 117 3.6.1
STATIC SHOCKLEY-READ-HALL RECOMBINATION 118 3.6.2 DYNAMIC
SHOCKLEY-READ-HALL RECOMBINATION 121 3.6.3 TRAP-ASSISTED BAND-TO-BAND
TUNNELING 123 3.6.4 DIRECT BAND-TO-BAND TUNNELING * 125 3.6.5 DIRECT
CARRIER GENERATION/RECOMBINATION MODEL 126 3.6.6 AUGER
GENERATION/RECOMBINATION 126 3.6.7 IMPACT IONIZATION 129 4. RF PARAMETER
EXTRACTION FOR HEMTS AND HBTS 141 4.1 RF PARAMETER EXTRACTION METHODS
141 4.1.1 TRANSIENT ANALYSIS 141 4.1.2 SINUSOIDAL STEADY-STATE ANALYSIS
142 4.1.3 FURTHER EXTRACTION APPROACHES 142 4.2 CONTRIBUTIONS TO THE
SMALL-SIGNAL EQUIVALENT CIRCUIT ELEMENTS .. 143 4.2.1 ANALYTICALHEMT
MODELS 143 4.2.2 EXTRACTED DEVICE QUANTITIES: INVARIANTS 149 4.2.3
ANALYTICAL HBT MODELS 150 5. HETEROJUNCTION BIPOLAR TRANSISTORS 154 5.1
GENERAL CONSIDERATIONS 154 5.2 SIGE HBTS 155 5.2.1 DEVICE FABRICATION
155 5.2.2 PROCESS SIMULATION 155 5.2.3 DEVICE SIMULATION AND CALIBRATION
TO MEASUREMENTS 156 CONTENTS IX 5.2.4 RF SIMULATIONS 170 5.3 HIGH-POWER
GAAS HBTS 173 5.3.1 DEVICE FABRICATION 173 5.3.2 DC SIMULATION RESULTS
173 5.3.3 S-PARAMETER SIMULATION 178 5.3.4 ANALYSIS OF HBT BEHAVIOR
AFTER ELECTROTHERMAL STRESS ... 185 5.3.5 THREE-DIMENSIONAL ANALYSIS OF
LEAKAGE CURRENTS 194 5.4 HIGH-SPEED INP HBTS 198 5.4.1 DEVICE DESIGN AND
MANUFACTURING ISSUES 198 5.4.2 INP SHBTS: CALIBRATION FOR LARGE AREA
DEVICES 200 5.4.3 INP DHBT: A HIGH-SPEED DEVICE WITH A HIGH BREAKDOWN
VOLTAGE 201 5.4.4 HIGH-SPEED OPTIMIZATION BY RF SIMULATION 202 6. HIGH
ELECTRON MOBILITY TRANSISTORS 204 6.1 GENERAL CONSIDERATIONS 204 6.2
HIGH-SPEED AND HIGH-POWER ALGAAS/INGAAS PHEMTS 204 6.2.1 DEVICE
FABRICATION 205 6.2.2 CALIBRATION METHODOLOGY AND DC ANALYSIS 206 6.2.3
RF ANALYSIS OF ALGAAS/INGAAS PHEMTS 210 6.2.4 BREAKDOWN ANALYSIS IN
ALGAAS/INGAAS PHEMTS 217 6.3 HIGH-SPEED INALAS/INGAAS HEMTS ON INP AND
GAAS 220 6.3.1 DEVICE MANUFACTURING 221 6.3.2 DC SIMULATION 222 6.3.3 RF
SIMULATION 227 6.4 HIGH-POWER HIGH-SPEED ALGAN/GAN HEMTS 230 6.4.1
DEVICE MANUFACTURING 230 6.4.2 DC SIMULATION RESULTS 232 6.4.3 RF
SIMULATION AND DEVICE OPTIMIZATION 235 7. NOVEL DEVICES 236 7.1 INP
DHBTS WITH GAASSB BASES 236 7.2 ALGAN/GAN HBTS 238 A. APPENDIX:
BENCHMARK STRUCTURES 239 REFERENCES 243 INDEX 274 LIST OF FIGURES 278
LIST OF TABLES 288
|
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| author | Palankovski, Vassil Quay, Rüdiger 1971- |
| author_GND | (DE-588)123732123 |
| author_facet | Palankovski, Vassil Quay, Rüdiger 1971- |
| author_role | aut aut |
| author_sort | Palankovski, Vassil |
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| building | Verbundindex |
| bvnumber | BV017430830 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
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| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV017430830 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T19:17:56Z |
| institution | BVB |
| isbn | 3211405372 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010502695 |
| oclc_num | 54375460 |
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| owner | DE-703 DE-91 DE-BY-TUM DE-706 DE-20 |
| owner_facet | DE-703 DE-91 DE-BY-TUM DE-706 DE-20 |
| physical | XX, 289 S. |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | Springer |
| record_format | marc |
| series2 | Computational microelectronics |
| spelling | Palankovski, Vassil Verfasser aut Analysis and simulation of heterostructure devices Vassil Palankovski ; Rüdiger Quay Wien [u.a.] Springer 2004 XX, 289 S. txt rdacontent n rdamedia nc rdacarrier Computational microelectronics Electronic apparatus and appliances Heterostructures Semiconductors Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf Heterostruktur-Bauelement (DE-588)4236378-0 s DE-604 Quay, Rüdiger 1971- Verfasser (DE-588)123732123 aut HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010502695&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Palankovski, Vassil Quay, Rüdiger 1971- Analysis and simulation of heterostructure devices Electronic apparatus and appliances Heterostructures Semiconductors Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| subject_GND | (DE-588)4236378-0 |
| title | Analysis and simulation of heterostructure devices |
| title_auth | Analysis and simulation of heterostructure devices |
| title_exact_search | Analysis and simulation of heterostructure devices |
| title_full | Analysis and simulation of heterostructure devices Vassil Palankovski ; Rüdiger Quay |
| title_fullStr | Analysis and simulation of heterostructure devices Vassil Palankovski ; Rüdiger Quay |
| title_full_unstemmed | Analysis and simulation of heterostructure devices Vassil Palankovski ; Rüdiger Quay |
| title_short | Analysis and simulation of heterostructure devices |
| title_sort | analysis and simulation of heterostructure devices |
| topic | Electronic apparatus and appliances Heterostructures Semiconductors Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| topic_facet | Electronic apparatus and appliances Heterostructures Semiconductors Heterostruktur-Bauelement |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010502695&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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