Holdings: Ferroelectric random access memories

Ferroelectric random access memories: fundamentals and applications ; with 12 tables

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Bibliographic Details
Other Authors:	Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Arimoto, Yoshihiro (Editor)
Format:	Book
Language:	English
Published:	Berlin Springer 2004
Series:	Topics in applied physics 93
Subjects:	RAM - Ferroelektrikum Ferroelectric storage cells RAM Ferroelektrikum
Online Access:	Inhaltsverzeichnis
Item Description:	Includes bibliographical references and index
Physical Description:	XIII, 290 S. Ill., graph. Darst.
ISBN:	3540407189

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MARC


LEADER	00000nam a2200000zcb4500
001	BV017410706
003	DE-604
005	20130206
007	t
008	030812s2004 gw ad\|\| \|\|\|\| 00\|\|\| eng d
010			\|a 2003059057
020			\|a 3540407189 \|c alk. paper \|9 3-540-40718-9
035			\|a (OCoLC)249564003
035			\|a (DE-599)BVBBV017410706
040			\|a DE-604 \|b ger \|e aacr
041	0		\|a eng
044			\|a gw \|c DE
049			\|a DE-703 \|a DE-91G \|a DE-898 \|a DE-11 \|a DE-188
050		0	\|a TK7895.M4
082	0		\|a 621.3973
084			\|a UP 4700 \|0 (DE-625)146404: \|2 rvk
084			\|a 29 \|2 sdnb
084			\|a ELT 352f \|2 stub
084			\|a PHY 765f \|2 stub
245	1	0	\|a Ferroelectric random access memories \|b fundamentals and applications ; with 12 tables \|c Hiroshi Ishiwara ... (ed.)
264		1	\|a Berlin \|b Springer \|c 2004
300			\|a XIII, 290 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
490	1		\|a Topics in applied physics \|v 93
500			\|a Includes bibliographical references and index
650		4	\|a RAM - Ferroelektrikum
650		4	\|a Ferroelectric storage cells
650	0	7	\|a RAM \|0 (DE-588)4176909-0 \|2 gnd \|9 rswk-swf
650	0	7	\|a Ferroelektrikum \|0 (DE-588)4154121-2 \|2 gnd \|9 rswk-swf
689	0	0	\|a RAM \|0 (DE-588)4176909-0 \|D s
689	0	1	\|a Ferroelektrikum \|0 (DE-588)4154121-2 \|D s
689	0		\|5 DE-604
700	1		\|a Ishiwara, Hiroshi \|4 edt
700	1		\|a Okuyama, Masanori \|4 edt
700	1		\|a Arimoto, Yoshihiro \|4 edt
830		0	\|a Topics in applied physics \|v 93 \|w (DE-604)BV008007504 \|9 93
856	4	2	\|m SWB Datenaustausch \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010490256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-010490256

Record in the Search Index

_version_	1804130226962169856
adam_text	CONTENTS PART I FERROELECTRIC THIN FILMS OVERVIEW JAMES F. SCOTT .................................................. 3 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 CONDITIONS DESIRED FOR FERAMS . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.2 TYPICAL MATERIALS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 DOPING EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.4 GRAIN SIZES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 SIZE EFFECTS IN FERROELECTRIC CAPACITORS . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 LATERAL AREA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 THICKNESS DEPENDENCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.3 ELECTRODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 DYNAMIC CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 POLARIZATION SWITCHING CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . 11 4.3 FREQUENCY DEPENDENCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 RETENTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 NOVEL SI-SUBSTITUTED FERROELECTRIC FILMS TAKESHI KIJIMA, HIROSHI ISHIWARA .................................. 17 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2 THE CRYSTALLIZATION PROCESS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3 THE PROPERTIES OF BI 2 SIO 5 -ADDED BI 4 TI 3 O 12 FILMS . . . . . . . . . . . . . . 20 4 THE FORMATION OF ULTRA-THIN FILMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5 ANNEALING EFFECTS IN HIGH-PRESSURE OXYGEN . . . . . . . . . . . . . . . . . . . . . 25 6 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 STATIC AND DYNAMIC PROPERTIES OF DOMAINS RAINER WASER, ULRICH B¨ OTTGER, MICHAEL GROSSMANN .................. 31 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 2 DOMAIN CONFIGURATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 VIII CONTENTS 3 REVERSIBLE AND IRREVERSIBLE POLARIZATION CONTRIBUTIONS . . . . . . . . . . . . 35 4 FERROELECTRIC SWITCHING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 5 LONG-TERM EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 5.1 FATIGUE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 5.2 RETENTION LOSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 5.3 IMPRINT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 NANOSCALE PHENOMENA IN FERROELECTRIC THIN FILMS VALANOOR NAGARAJAN, CHANDAN S. GANPULE, RAMAMOORTHY RAMESH .... 47 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 2 EXPERIMENTAL DETAILS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 3 NANOSCALE DOMAIN IMAGING IN FERROELECTRIC THIN FILMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 4 NANOSCALE PIEZOELECTRIC AND HYSTERESIS BEHAVIOR . . . . . . . . . . . . . . . . . 61 5 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 PART II DEPOSITION AND CHARACTERIZATION METHODS THE SPUTTERING TECHNIQUE KOUKOU SUU .................................................... 71 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 2 A SPUTTERING SYSTEM FOR MASS PRODUCTION . . . . . . . . . . . . . . . . . . . . . . 72 3 THE OPTIMIZATION OF SPUTTERING CONDITIONS . . . . . . . . . . . . . . . . . . . . . 75 4 THE FERROELECTRIC CHARACTERISTICS OF SPUTTERED PZT CAPACITORS . . . . 79 5 SPUTTERING OF SBT FILMS AND HYDROGEN BARRIER LAYERS . . . . . . . . . . . 80 6 FUTURE DEVELOPMENT TASKS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 A CHEMICAL APPROACH USING LIQUID SOURCES TAILORED TO BI-BASED LAYER-STRUCTURED PEROVSKITE THIN FILMS KAZUMI KATO ................................................... 85 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 2 SRBI 2 (TA, NB) 2 O 9 AND CABI 2 TA 2 O 9 THIN FILMS DEPOSITED VIA TRIPLE ALKOXIDES OF SRBITA/NB AND CABITA . . . . 86 3 CABI 3 TI 3 O 12 * X , CABI 4 TI 4 O 15 , AND CA 2 BI 4 TI 5 O 18 THIN FILMS DEPOSITED VIA MIXTURES OF CABI AND BITI DOUBLE ALKOXIDES . . . . . 90 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 RECENT DEVELOPMENT IN THE PREPARATION OF FERROELECTRIC THIN FILMS BY MOCVD HIROSHI FUNAKUBO ............................................... 95 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 2 LOW-TEMPERATURE DEPOSITION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 CONTENTS IX 2.1 SBT FILMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 2.2 PZT FILMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 3 NOVEL MATERIALS RESEARCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 3.1 SOLID SOLUTION OF SRBI 2 (TA 0 . 7 NB 0 . 3 ) 2 O 9 * BI 3 TATIO 9 [(1 * X )SBT- X BTT] . . . 99 3.2 (BI,LN) 4 (TI,V) 3 O 12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 4 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 MATERIALS INTEGRATION STRATEGIES ORLANDO AUCIELLO, ANIL M. DHOTE, BAO T. LIU, SANJEEV AGGARWAL, RAMAMOORTHY RAMESH .......................................... 105 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 2 AN EXPERIMENTAL METHOD FOR THE SYNTHESIS AND CHARACTERIZATION OF FERROELECTRIC CAPACITOR LAYERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 3 THE MAGNETRON-BASED SYNTHESIS AND CHARACTERIZATION OF TIAL LAYERS AND LSCO/TIAL HETEROSTRUCTURES . . . . . . . . . . . . . . 109 4 STUDIES OF TIAL AND LSCO FILM GROWTH AND OXIDATION PROCESSES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 4.1 MICROSTRUCTUREDEPOSITION ENVIRONMENT RELATIONSHIPS FOR TIAL LAYERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 4.2 STUDIES OF TIAL/LSCO HETEROSTRUCTURED LAYER GROWTH AND OXIDATION PROCESSES VIA COMPLEMENTARY IN SITU ANALYTICAL TECHNIQUES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 5 ELECTRICAL CHARACTERIZATION OF FERROELECTRIC CAPACITORS WITH A TIAL DIFFUSION BARRIER/ELECTRODE LAYER . . . . . . . . . . . . . . . . . 118 6 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 CHARACTERIZATION BY SCANNING NONLINEAR DIELECTRIC MICROSCOPY YASUO CHO ..................................................... 123 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 2 THE PRINCIPLES AND THEORY OF SNDM . . . . . . . . . . . . . . . . . . . . . . . . . . 124 2.1 NONLINEAR DIELECTRIC IMAGING WITH SUB-NANOMETER RESOLUTION 124 2.2 A COMPARISON BETWEEN SNDM IMAGING AND PIEZO-RESPONSE IMAGING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 3 HIGHER-ORDER NONLINEAR DIELECTRIC MICROSCOPY . . . . . . . . . . . . . . . . . . . 129 3.1 THE THEORY OF HIGHER-ORDER NONLINEAR DIELECTRIC MICROSCOPY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 3.2 EXPERIMENTAL DETAILS OF HIGHER-ORDER NONLINEAR DIELECTRIC MICROSCOPY . . . . . . . . . . . . . . . . . . . . . . . . . . 130 4 THREE-DIMENSIONAL MEASUREMENT TECHNIQUES . . . . . . . . . . . . . . . . . . . . 133 4.1 THE PRINCIPLE AND THE MEASUREMENT SYSTEM . . . . . . . . . . . . . . . . 133 4.2 EXPERIMENTAL RESULTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 X CONTENTS PART III THE FABRICATION PROCESS AND CIRCUIT DESIGN THE CURRENT STATUS OF FERAM GLEN R. FOX, RICHARD BAILEY, WILLIAM B. KRAUS, FAN CHU, SHAN SUN, TOM DAVENPORT ................................................. 139 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 2 THE HIGH-DENSITY FERAM ROADMAP . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 3 THE CURRENT STATUS OF PZT CAPACITOR MATERIALS . . . . . . . . . . . . . . . . . 145 4 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 OPERATION PRINCIPLE AND CIRCUIT DESIGN ISSUES ALI SHEIKHOLESLAMI .............................................. 149 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 2 THE FERROELECTRIC CAPACITOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 2.1 THE HYSTERESIS LOOP CHARACTERISTIC . . . . . . . . . . . . . . . . . . . . . . . 153 2.2 PULSE-BASED CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154 3 THE FERROELECTRIC MEMORY CELL: READ AND WRITE OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 4 SENSING SCHEMES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 5 FERROELECTRIC MEMORY ARCHITECTURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 5.1 THE WORDLINE-PARALLEL PLATELINE (WL//PL) . . . . . . . . . . . . . . . . 159 5.2 THE BITLINE-PARALLEL PLATELINE (BL//PL) . . . . . . . . . . . . . . . . . . . 160 5.3 THE SEGMENTED PLATELINE (SEGMENTED PL). . . . . . . . . . . . . . . . . . 161 6 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 HIGH-DENSITY INTEGRATION KINAM KIM .................................................... 165 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 2 KEY TECHNOLOGIES FOR HIGH-DENSITY FERAM WITH A SMALL CELL SIZE FACTOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 2.1 RELIABLE FERROELECTRIC CAPACITOR TECHNOLOGY . . . . . . . . . . . . . . . . 168 2.2 VERTICAL SHAPE CAPACITOR ETCHING TECHNOLOGY WITH LOW ETCHING DAMAGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169 2.3 PLUG TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 2.4 ENCAPSULATED HYDROGEN BARRIER TECHNOLOGY . . . . . . . . . . . . . . . . 171 2.5 NOVEL INTEGRATION TECHNOLOGY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 2.6 SUB-10 F 2 FUTURE FERAM TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . 173 3 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 CONTENTS XI TESTING AND RELIABILITY YASUHIRO SHIMADA ............................................... 177 1 LEAKAGE CURRENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177 2 ELECTRICAL BREAKDOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 3 HYSTERESIS MEASUREMENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181 4 FERROELECTRIC FATIGUE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 5 PULSE POLARIZATION MEASUREMENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184 6 RETENTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 7 IMPRINT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192 PART IV ADVANCED-TYPE MEMORIES CHAIN FERAMS DAISABURO TAKASHIMA AND YUKIHITO OOWAKI ........................ 197 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197 2 CONVENTIONAL FERAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 3 THE CONCEPT OF CHAIN FERAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199 3.1 THE BASIC STRUCTURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199 3.2 TWO BASIC OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 4 THE HIGH-SPEED TECHNIQUE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202 5 HIGH-DENSITY TECHNIQUES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204 5.1 THE ADVANTAGE OF CHAIN ARCHITECTURE . . . . . . . . . . . . . . . . . . . . . 204 5.2 THE ONE-PITCH-SHIFT CELL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204 5.3 THE HIERARCHICAL WORDLINE SCHEME WITHOUT EXTRA METAL . . . . . 205 5.4 THE SMALL-AREA DUMMY CELL SCHEME. . . . . . . . . . . . . . . . . . . . . . 206 5.5 CHIP SIZE COMPARISON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208 6 LOW-VOLTAGE DESIGN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210 7 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 CAPACITOR-ON-METAL/VIA-STACKED-PLUG (CMVP) MEMORY CELL TECHNOLOGIES AND APPLICATION TO A NONVOLATILE SRAM HIROMITSU HADA, KAZUSHI AMANUMA, TOHRU MIWA, SOTA KOBAYASHI, TORU TATSUMI, YUKIHIKO MAEJIMA, JUNICHI YAMADA, HIROKI KOIKE, HIDEO TOYOSHIMA, TAKEMITSU KUNIO ............................... 215 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215 2 THE CMVP MEMORY CELL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216 2.1 THE CELL STRUCTURE AND PROCESS . . . . . . . . . . . . . . . . . . . . . . . . . . . 216 2.2 THE ELECTRICAL PROPERTIES OF THE PZT CAPACITOR . . . . . . . . . . . . . 220 2.3 PLUG-CONTACT RESISTANCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221 2.4 THE CELL-ARRAY MONITOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222 XII CONTENTS 3 A NONVOLATILE SRAM WITH BACKUP FERROELECTRIC CAPACITORS (NV-SRAM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222 3.1 CONVENTIONAL SHADOW RAMS USING FERROELECTRIC CAPACITORS . . 223 3.2 THE NV-SRAM CELL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 3.2.1 THE CELL STRUCTURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 3.2.2 THE READ OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 3.2.3 THE WRITE OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 3.2.4 THE STORE OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226 3.2.5 THE RECALL OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . 226 3.2.6 THE CELL LAYOUT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227 3.2.7 OTHER ADVANTAGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228 3.3 CHIP FABRICATION AND EXPERIMENTS . . . . . . . . . . . . . . . . . . . . . . . . 229 4 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231 THE FET-TYPE FERAM HIROSHI ISHIWARA ................................................ 233 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233 2 NOVEL APPLICATIONS OF FERROELECTRIC-GATE FETS . . . . . . . . . . . . . . . . . . 234 2.1 THE SINGLE-TRANSISTOR-CELL-TYPE DIGITAL MEMORY . . . . . . . . . . . . 234 2.2 RECONFIGURABLE LSIS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 236 2.3 AN ANALOG MEMORY FOR STORING SYNAPTIC WEIGHT IN A NEURAL NETWORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 236 3 THE BASIC OPERATION OF FERROELECTRIC-GATE FETS . . . . . . . . . . . . . . . . 238 3.1 GENERATION OF THE DEPOLARIZATION FIELD . . . . . . . . . . . . . . . . . . . . 238 3.2 IMPROVEMENT OF THE DATA RETENTION CHARACTERISTICS . . . . . . . . . 238 3.3 A COMPARISON OF THE MFIS AND MFMIS STRUCTURES . . . . . . . . . 240 4 RECENT EXPERIMENTAL RESULTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241 4.1 THE RELATION BETWEEN THE BUFFER LAYER THICKNESS AND THE AREA RATIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241 4.2 CONTROL OF THE CRYSTAL ORIENTATION . . . . . . . . . . . . . . . . . . . . . . . . 243 4.3 OTHER IMPORTANT BUFFER LAYERS AND FERROELECTRIC FILMS . . . . . . 245 5 THE 1T-2C-TYPE FERROELECTRIC MEMORY . . . . . . . . . . . . . . . . . . . . . . . . . 246 5.1 THE CELL STRUCTURE AND BASIC OPERATION . . . . . . . . . . . . . . . . . . . 246 5.2 EXPERIMENTAL RESULTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247 5.3 HIGH-DENSITY INTEGRATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 PART V APPLICATIONS AND FUTURE PROSPECTS FERROELECTRIC TECHNOLOGIES FOR PORTABLE EQUIPMENT YOSHIKAZU FUJIMORI, TAKASHI NAKAMURA, AND HIDEMI TAKASU .......... 255 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 2 PROCESS TECHNOLOGIES FOR LOW-VOLTAGE OPERATION. . . . . . . . . . . . . . . . . 256 CONTENTS XIII 2.1 EXPERIMENTAL AND CHARACTERIZATION . . . . . . . . . . . . . . . . . . . . . . . 256 2.2 EXPERIMENTAL RESULTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257 3 NONVOLATILE LOGIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261 3.1 THE FERROELECTRIC NONVOLATILE LATCH . . . . . . . . . . . . . . . . . . . . . . . 261 3.2 TEST CHIP MEASUREMENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263 3.3 SCALING ISSUES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265 3.4 OTHER NONVOLATILE LATCH CIRCUITS . . . . . . . . . . . . . . . . . . . . . . . . . 265 3.5 APPLICATIONS USING THE NONVOLATILE LATCH . . . . . . . . . . . . . . . . . . 266 3.6 A NOVEL FUNCTIONAL DEVICE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267 4 SUMMARY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269 THE APPLICATION OF FERAM TO FUTURE INFORMATION TECHNOLOGY WORLD SHOICHI MASUI, SHUNSUKE FUEKI, KOICHI MASUTANI, AMANE INOUE, TOSHIYUKI TERAMOTO, TETSUO SUZUKI, SHOICHIRO KAWASHIMA ........... 271 1 INTRODUCTION A PROSPECT FOR THE FUTURE INFORMATION TECHNOLOGY WORLD . . . . . . . . . . . . . . . . . . . 271 2 SMART CARD MARKET/SYSTEM REQUIREMENTS . . . . . . . . . . . . . . . . . . . . . . 273 3 NONVOLATILE MEMORY CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . 274 4 CONTACTLESS CARDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275 5 CODE-REPROGRAMMABLE MULTI-APPLICATION CARDS . . . . . . . . . . . . . . . . . 278 6 FUTURE TRENDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 282 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 282 INDEX ......................................................... 283
any_adam_object	1
author2	Ishiwara, Hiroshi Okuyama, Masanori Arimoto, Yoshihiro
author2_role	edt edt edt
author2_variant	h i hi m o mo y a ya
author_facet	Ishiwara, Hiroshi Okuyama, Masanori Arimoto, Yoshihiro
building	Verbundindex
bvnumber	BV017410706
callnumber-first	T - Technology
callnumber-label	TK7895
callnumber-raw	TK7895.M4
callnumber-search	TK7895.M4
callnumber-sort	TK 47895 M4
callnumber-subject	TK - Electrical and Nuclear Engineering
classification_rvk	UP 4700
classification_tum	ELT 352f PHY 765f
ctrlnum	(OCoLC)249564003 (DE-599)BVBBV017410706
dewey-full	621.3973
dewey-hundreds	600 - Technology (Applied sciences)
dewey-ones	621 - Applied physics
dewey-raw	621.3973
dewey-search	621.3973
dewey-sort	3621.3973
dewey-tens	620 - Engineering and allied operations
discipline	Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01858nam a2200505zcb4500</leader><controlfield tag="001">BV017410706</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20130206 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">030812s2004 gw ad\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a">2003059057</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3540407189</subfield><subfield code="c">alk. paper</subfield><subfield code="9">3-540-40718-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)249564003</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV017410706</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-91G</subfield><subfield code="a">DE-898</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7895.M4</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3973</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 4700</subfield><subfield code="0">(DE-625)146404:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">29</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 352f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 765f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ferroelectric random access memories</subfield><subfield code="b">fundamentals and applications ; with 12 tables</subfield><subfield code="c">Hiroshi Ishiwara ... (ed.)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="b">Springer</subfield><subfield code="c">2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIII, 290 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Topics in applied physics</subfield><subfield code="v">93</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">RAM - Ferroelektrikum</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric storage cells</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">RAM</subfield><subfield code="0">(DE-588)4176909-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ferroelektrikum</subfield><subfield code="0">(DE-588)4154121-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">RAM</subfield><subfield code="0">(DE-588)4176909-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ferroelektrikum</subfield><subfield code="0">(DE-588)4154121-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ishiwara, Hiroshi</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okuyama, Masanori</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arimoto, Yoshihiro</subfield><subfield code="4">edt</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Topics in applied physics</subfield><subfield code="v">93</subfield><subfield code="w">(DE-604)BV008007504</subfield><subfield code="9">93</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">SWB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010490256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-010490256</subfield></datafield></record></collection>
id	DE-604.BV017410706
illustrated	Illustrated
indexdate	2024-07-09T19:17:40Z
institution	BVB
isbn	3540407189
language	English
lccn	2003059057
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-010490256
oclc_num	249564003
open_access_boolean
owner	DE-703 DE-91G DE-BY-TUM DE-898 DE-BY-UBR DE-11 DE-188
owner_facet	DE-703 DE-91G DE-BY-TUM DE-898 DE-BY-UBR DE-11 DE-188
physical	XIII, 290 S. Ill., graph. Darst.
publishDate	2004
publishDateSearch	2004
publishDateSort	2004
publisher	Springer
record_format	marc
series	Topics in applied physics
series2	Topics in applied physics
spelling	Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.) Berlin Springer 2004 XIII, 290 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Topics in applied physics 93 Includes bibliographical references and index RAM - Ferroelektrikum Ferroelectric storage cells RAM (DE-588)4176909-0 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf RAM (DE-588)4176909-0 s Ferroelektrikum (DE-588)4154121-2 s DE-604 Ishiwara, Hiroshi edt Okuyama, Masanori edt Arimoto, Yoshihiro edt Topics in applied physics 93 (DE-604)BV008007504 93 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010490256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Ferroelectric random access memories fundamentals and applications ; with 12 tables Topics in applied physics RAM - Ferroelektrikum Ferroelectric storage cells RAM (DE-588)4176909-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd
subject_GND	(DE-588)4176909-0 (DE-588)4154121-2
title	Ferroelectric random access memories fundamentals and applications ; with 12 tables
title_auth	Ferroelectric random access memories fundamentals and applications ; with 12 tables
title_exact_search	Ferroelectric random access memories fundamentals and applications ; with 12 tables
title_full	Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.)
title_fullStr	Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.)
title_full_unstemmed	Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.)
title_short	Ferroelectric random access memories
title_sort	ferroelectric random access memories fundamentals and applications with 12 tables
title_sub	fundamentals and applications ; with 12 tables
topic	RAM - Ferroelektrikum Ferroelectric storage cells RAM (DE-588)4176909-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd
topic_facet	RAM - Ferroelektrikum Ferroelectric storage cells RAM Ferroelektrikum
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010490256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV008007504
work_keys_str_mv	AT ishiwarahiroshi ferroelectricrandomaccessmemoriesfundamentalsandapplicationswith12tables AT okuyamamasanori ferroelectricrandomaccessmemoriesfundamentalsandapplicationswith12tables AT arimotoyoshihiro ferroelectricrandomaccessmemoriesfundamentalsandapplicationswith12tables

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