Ferroelectric random access memories: fundamentals and applications ; with 12 tables
Gespeichert in:
| Weitere Verfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin
Springer
2004
|
| Schriftenreihe: | Topics in applied physics
93 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | XIII, 290 S. Ill., graph. Darst. |
| ISBN: | 3540407189 |
Internformat
MARC
| LEADER | 00000nam a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV017410706 | ||
| 003 | DE-604 | ||
| 005 | 20130206 | ||
| 007 | t | ||
| 008 | 030812s2004 gw ad|| |||| 00||| eng d | ||
| 010 | |a 2003059057 | ||
| 020 | |a 3540407189 |c alk. paper |9 3-540-40718-9 | ||
| 035 | |a (OCoLC)249564003 | ||
| 035 | |a (DE-599)BVBBV017410706 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-703 |a DE-91G |a DE-898 |a DE-11 |a DE-188 | ||
| 050 | 0 | |a TK7895.M4 | |
| 082 | 0 | |a 621.3973 | |
| 084 | |a UP 4700 |0 (DE-625)146404: |2 rvk | ||
| 084 | |a 29 |2 sdnb | ||
| 084 | |a ELT 352f |2 stub | ||
| 084 | |a PHY 765f |2 stub | ||
| 245 | 1 | 0 | |a Ferroelectric random access memories |b fundamentals and applications ; with 12 tables |c Hiroshi Ishiwara ... (ed.) |
| 264 | 1 | |a Berlin |b Springer |c 2004 | |
| 300 | |a XIII, 290 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Topics in applied physics |v 93 | |
| 500 | |a Includes bibliographical references and index | ||
| 650 | 4 | |a RAM - Ferroelektrikum | |
| 650 | 4 | |a Ferroelectric storage cells | |
| 650 | 0 | 7 | |a RAM |0 (DE-588)4176909-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ferroelektrikum |0 (DE-588)4154121-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a RAM |0 (DE-588)4176909-0 |D s |
| 689 | 0 | 1 | |a Ferroelektrikum |0 (DE-588)4154121-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Ishiwara, Hiroshi |4 edt | |
| 700 | 1 | |a Okuyama, Masanori |4 edt | |
| 700 | 1 | |a Arimoto, Yoshihiro |4 edt | |
| 830 | 0 | |a Topics in applied physics |v 93 |w (DE-604)BV008007504 |9 93 | |
| 856 | 4 | 2 | |m SWB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010490256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-010490256 | ||
Datensatz im Suchindex
| _version_ | 1804130226962169856 |
|---|---|
| adam_text | CONTENTS PART I FERROELECTRIC THIN FILMS OVERVIEW JAMES F. SCOTT
.................................................. 3 1 INTRODUCTION . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 3 2.1 CONDITIONS DESIRED FOR FERAMS . . . . . . . .
. . . . . . . . . . . . . . . . . . 3 2.2 TYPICAL MATERIALS . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3
DOPING EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 5 2.4 GRAIN SIZES . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 SIZE
EFFECTS IN FERROELECTRIC CAPACITORS . . . . . . . . . . . . . . . . . .
. . . . . . . 7 3.1 LATERAL AREA . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 7 3.2 THICKNESS
DEPENDENCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 7 3.3 ELECTRODES . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 8 4 DYNAMIC CHARACTERISTICS .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 4.2 POLARIZATION SWITCHING CHARACTERISTICS . . . . . . . . . . . . .
. . . . . . . . 11 4.3 FREQUENCY DEPENDENCE . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 13 4.4 RETENTION . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 14 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . 15 NOVEL
SI-SUBSTITUTED FERROELECTRIC FILMS TAKESHI KIJIMA, HIROSHI ISHIWARA
.................................. 17 1 INTRODUCTION . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 17 2 THE CRYSTALLIZATION PROCESS . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 18 3 THE PROPERTIES OF BI 2 SIO 5
-ADDED BI 4 TI 3 O 12 FILMS . . . . . . . . . . . . . . 20 4 THE
FORMATION OF ULTRA-THIN FILMS . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 24 5 ANNEALING EFFECTS IN HIGH-PRESSURE OXYGEN . . . . . .
. . . . . . . . . . . . . . . 25 6 SUMMARY. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 29 STATIC AND DYNAMIC
PROPERTIES OF DOMAINS RAINER WASER, ULRICH B¨ OTTGER, MICHAEL GROSSMANN
.................. 31 1 INTRODUCTION . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 2 DOMAIN
CONFIGURATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 32 VIII CONTENTS 3 REVERSIBLE AND IRREVERSIBLE
POLARIZATION CONTRIBUTIONS . . . . . . . . . . . . 35 4 FERROELECTRIC
SWITCHING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 37 5 LONG-TERM EFFECTS . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . 41 5.1 FATIGUE . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 41 5.2 RETENTION LOSS . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 42 5.3 IMPRINT . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 42 REFERENCES . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
NANOSCALE PHENOMENA IN FERROELECTRIC THIN FILMS VALANOOR NAGARAJAN,
CHANDAN S. GANPULE, RAMAMOORTHY RAMESH .... 47 1 INTRODUCTION . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 47 2 EXPERIMENTAL DETAILS . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 48 3 NANOSCALE DOMAIN
IMAGING IN FERROELECTRIC THIN FILMS . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 50 4 NANOSCALE PIEZOELECTRIC AND
HYSTERESIS BEHAVIOR . . . . . . . . . . . . . . . . . 61 5 SUMMARY. . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 66 REFERENCES . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
67 PART II DEPOSITION AND CHARACTERIZATION METHODS THE SPUTTERING
TECHNIQUE KOUKOU SUU
.................................................... 71 1 INTRODUCTION .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 71 2 A SPUTTERING SYSTEM FOR MASS PRODUCTION . . .
. . . . . . . . . . . . . . . . . . . 72 3 THE OPTIMIZATION OF
SPUTTERING CONDITIONS . . . . . . . . . . . . . . . . . . . . . 75 4 THE
FERROELECTRIC CHARACTERISTICS OF SPUTTERED PZT CAPACITORS . . . . 79 5
SPUTTERING OF SBT FILMS AND HYDROGEN BARRIER LAYERS . . . . . . . . . .
. 80 6 FUTURE DEVELOPMENT TASKS . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 82 REFERENCES . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 82 A CHEMICAL APPROACH USING LIQUID SOURCES TAILORED TO BI-BASED
LAYER-STRUCTURED PEROVSKITE THIN FILMS KAZUMI KATO
................................................... 85 1 INTRODUCTION .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 85 2 SRBI 2 (TA, NB) 2 O 9 AND CABI 2 TA 2 O 9
THIN FILMS DEPOSITED VIA TRIPLE ALKOXIDES OF SR*BI*TA/NB AND CA*BI*TA .
. . . 86 3 CABI 3 TI 3 O 12 * X , CABI 4 TI 4 O 15 , AND CA 2 BI 4 TI 5
O 18 THIN FILMS DEPOSITED VIA MIXTURES OF CA*BI AND BI*TI DOUBLE
ALKOXIDES . . . . . 90 REFERENCES . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
RECENT DEVELOPMENT IN THE PREPARATION OF FERROELECTRIC THIN FILMS BY
MOCVD HIROSHI FUNAKUBO ...............................................
95 1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 95 2 LOW-TEMPERATURE
DEPOSITION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 96 CONTENTS IX 2.1 SBT FILMS . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 96 2.2 PZT FILMS . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 97 3 NOVEL MATERIALS RESEARCH . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 99 3.1 SOLID SOLUTION OF
SRBI 2 (TA 0 . 7 NB 0 . 3 ) 2 O 9 * BI 3 TATIO 9 [(1 * X )SBT- X BTT] .
. . 99 3.2 (BI,LN) 4 (TI,V) 3 O 12 . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 100 4 SUMMARY. . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 101 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 102 MATERIALS
INTEGRATION STRATEGIES ORLANDO AUCIELLO, ANIL M. DHOTE, BAO T. LIU,
SANJEEV AGGARWAL, RAMAMOORTHY RAMESH
.......................................... 105 1 INTRODUCTION . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 105 2 AN EXPERIMENTAL METHOD FOR THE SYNTHESIS AND
CHARACTERIZATION OF FERROELECTRIC CAPACITOR LAYERS . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 108 3 THE MAGNETRON-BASED
SYNTHESIS AND CHARACTERIZATION OF TI*AL LAYERS AND LSCO/TI*AL
HETEROSTRUCTURES . . . . . . . . . . . . . . 109 4 STUDIES OF TI*AL AND
LSCO FILM GROWTH AND OXIDATION PROCESSES . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 113 4.1
MICROSTRUCTURE*DEPOSITION ENVIRONMENT RELATIONSHIPS FOR TI*AL LAYERS . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 114 4.2 STUDIES OF TI*AL/LSCO HETEROSTRUCTURED LAYER GROWTH AND
OXIDATION PROCESSES VIA COMPLEMENTARY IN SITU ANALYTICAL TECHNIQUES . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 114 5 ELECTRICAL
CHARACTERIZATION OF FERROELECTRIC CAPACITORS WITH A TI*AL DIFFUSION
BARRIER/ELECTRODE LAYER . . . . . . . . . . . . . . . . . 118 6 SUMMARY.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . 120 REFERENCES . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 121 CHARACTERIZATION BY SCANNING NONLINEAR DIELECTRIC MICROSCOPY
YASUO CHO ..................................................... 123 1
INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 123 2 THE PRINCIPLES AND THEORY OF
SNDM . . . . . . . . . . . . . . . . . . . . . . . . . . 124 2.1
NONLINEAR DIELECTRIC IMAGING WITH SUB-NANOMETER RESOLUTION 124 2.2 A
COMPARISON BETWEEN SNDM IMAGING AND PIEZO-RESPONSE IMAGING . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 128 3 HIGHER-ORDER NONLINEAR
DIELECTRIC MICROSCOPY . . . . . . . . . . . . . . . . . . . 129 3.1 THE
THEORY OF HIGHER-ORDER NONLINEAR DIELECTRIC MICROSCOPY . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . 129 3.2 EXPERIMENTAL
DETAILS OF HIGHER-ORDER NONLINEAR DIELECTRIC MICROSCOPY . . . . . . . .
. . . . . . . . . . . . . . . . . . 130 4 THREE-DIMENSIONAL MEASUREMENT
TECHNIQUES . . . . . . . . . . . . . . . . . . . . 133 4.1 THE PRINCIPLE
AND THE MEASUREMENT SYSTEM . . . . . . . . . . . . . . . . 133 4.2
EXPERIMENTAL RESULTS . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 134 REFERENCES . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 X
CONTENTS PART III THE FABRICATION PROCESS AND CIRCUIT DESIGN THE CURRENT
STATUS OF FERAM GLEN R. FOX, RICHARD BAILEY, WILLIAM B. KRAUS, FAN CHU,
SHAN SUN, TOM DAVENPORT
................................................. 139 1 INTRODUCTION . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 139 2 THE HIGH-DENSITY FERAM ROADMAP . . . . . . . .
. . . . . . . . . . . . . . . . . . . 141 3 THE CURRENT STATUS OF PZT
CAPACITOR MATERIALS . . . . . . . . . . . . . . . . . 145 4 SUMMARY. . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 147 REFERENCES . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
148 OPERATION PRINCIPLE AND CIRCUIT DESIGN ISSUES ALI SHEIKHOLESLAMI
.............................................. 149 1 INTRODUCTION . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 149 2 THE FERROELECTRIC CAPACITOR . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 151 2.1 THE HYSTERESIS
LOOP CHARACTERISTIC . . . . . . . . . . . . . . . . . . . . . . . 153
2.2 PULSE-BASED CHARACTERISTICS . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 154 3 THE FERROELECTRIC MEMORY CELL: READ AND WRITE
OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 155 4 SENSING SCHEMES . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 158 5 FERROELECTRIC MEMORY
ARCHITECTURES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
159 5.1 THE WORDLINE-PARALLEL PLATELINE (WL//PL) . . . . . . . . . . . .
. . . . 159 5.2 THE BITLINE-PARALLEL PLATELINE (BL//PL) . . . . . . . .
. . . . . . . . . . . 160 5.3 THE SEGMENTED PLATELINE (SEGMENTED PL). .
. . . . . . . . . . . . . . . . 161 6 SUMMARY. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 161 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 162 HIGH-DENSITY
INTEGRATION KINAM KIM
.................................................... 165 1 INTRODUCTION
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 165 2 KEY TECHNOLOGIES FOR HIGH-DENSITY FERAM
WITH A SMALL CELL SIZE FACTOR . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 168 2.1 RELIABLE FERROELECTRIC CAPACITOR
TECHNOLOGY . . . . . . . . . . . . . . . . 168 2.2 VERTICAL SHAPE
CAPACITOR ETCHING TECHNOLOGY WITH LOW ETCHING DAMAGE . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 169 2.3 PLUG TECHNOLOGY . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 170 2.4 ENCAPSULATED HYDROGEN BARRIER TECHNOLOGY . . . . . . . . . . .
. . . . . 171 2.5 NOVEL INTEGRATION TECHNOLOGY. . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 172 2.6 SUB-10 F 2 FUTURE FERAM
TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . 173 3 SUMMARY. . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 175 REFERENCES . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175 CONTENTS XI TESTING AND RELIABILITY YASUHIRO SHIMADA
............................................... 177 1 LEAKAGE CURRENT .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 177 2 ELECTRICAL BREAKDOWN . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 178 3 HYSTERESIS
MEASUREMENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 181 4 FERROELECTRIC FATIGUE . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 183 5 PULSE
POLARIZATION MEASUREMENT . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 184 6 RETENTION . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 7 IMPRINT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 188 REFERENCES . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 192 PART IV ADVANCED-TYPE MEMORIES CHAIN FERAMS DAISABURO
TAKASHIMA AND YUKIHITO OOWAKI ........................ 197 1
INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 197 2 CONVENTIONAL FERAM . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
3 THE CONCEPT OF CHAIN FERAM . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 199 3.1 THE BASIC STRUCTURE . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 199 3.2 TWO BASIC
OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 200 4 THE HIGH-SPEED TECHNIQUE . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 202 5 HIGH-DENSITY TECHNIQUES . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
5.1 THE ADVANTAGE OF CHAIN ARCHITECTURE . . . . . . . . . . . . . . . .
. . . . . 204 5.2 THE ONE-PITCH-SHIFT CELL . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 204 5.3 THE HIERARCHICAL WORDLINE
SCHEME WITHOUT EXTRA METAL . . . . . 205 5.4 THE SMALL-AREA DUMMY CELL
SCHEME. . . . . . . . . . . . . . . . . . . . . . 206 5.5 CHIP SIZE
COMPARISON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 208 6 LOW-VOLTAGE DESIGN . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 210 7 SUMMARY. . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 212 REFERENCES . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
CAPACITOR-ON-METAL/VIA-STACKED-PLUG (CMVP) MEMORY CELL TECHNOLOGIES AND
APPLICATION TO A NONVOLATILE SRAM HIROMITSU HADA, KAZUSHI AMANUMA, TOHRU
MIWA, SOTA KOBAYASHI, TORU TATSUMI, YUKIHIKO MAEJIMA, JUNICHI YAMADA,
HIROKI KOIKE, HIDEO TOYOSHIMA, TAKEMITSU KUNIO
............................... 215 1 INTRODUCTION . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 215 2 THE CMVP MEMORY CELL . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 216 2.1 THE CELL STRUCTURE AND PROCESS . .
. . . . . . . . . . . . . . . . . . . . . . . . . 216 2.2 THE ELECTRICAL
PROPERTIES OF THE PZT CAPACITOR . . . . . . . . . . . . . 220 2.3
PLUG-CONTACT RESISTANCE . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 221 2.4 THE CELL-ARRAY MONITOR . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 222 XII CONTENTS 3 A
NONVOLATILE SRAM WITH BACKUP FERROELECTRIC CAPACITORS (NV-SRAM) . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 222 3.1 CONVENTIONAL SHADOW RAMS USING FERROELECTRIC
CAPACITORS . . 223 3.2 THE NV-SRAM CELL . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 225 3.2.1 THE CELL STRUCTURE . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 3.2.2
THE READ OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 225 3.2.3 THE WRITE OPERATION . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 225 3.2.4 THE STORE OPERATION . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 226 3.2.5 THE RECALL OPERATION . . . . .
. . . . . . . . . . . . . . . . . . . . . . 226 3.2.6 THE CELL LAYOUT. .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227
3.2.7 OTHER ADVANTAGES . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 228 3.3 CHIP FABRICATION AND EXPERIMENTS . . . . . . . .
. . . . . . . . . . . . . . . . 229 4 SUMMARY. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 231 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 231 THE FET-TYPE FERAM
HIROSHI ISHIWARA ................................................ 233 1
INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 233 2 NOVEL APPLICATIONS OF
FERROELECTRIC-GATE FETS . . . . . . . . . . . . . . . . . . 234 2.1 THE
SINGLE-TRANSISTOR-CELL-TYPE DIGITAL MEMORY . . . . . . . . . . . . 234
2.2 RECONFIGURABLE LSIS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 236 2.3 AN ANALOG MEMORY FOR STORING SYNAPTIC
WEIGHT IN A NEURAL NETWORK . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 236 3 THE BASIC OPERATION OF
FERROELECTRIC-GATE FETS . . . . . . . . . . . . . . . . 238 3.1
GENERATION OF THE DEPOLARIZATION FIELD . . . . . . . . . . . . . . . . .
. . . 238 3.2 IMPROVEMENT OF THE DATA RETENTION CHARACTERISTICS . . . .
. . . . . 238 3.3 A COMPARISON OF THE MFIS AND MFMIS STRUCTURES . . . .
. . . . . 240 4 RECENT EXPERIMENTAL RESULTS . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 241 4.1 THE RELATION BETWEEN THE
BUFFER LAYER THICKNESS AND THE AREA RATIO . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 241 4.2 CONTROL OF THE
CRYSTAL ORIENTATION . . . . . . . . . . . . . . . . . . . . . . . . 243
4.3 OTHER IMPORTANT BUFFER LAYERS AND FERROELECTRIC FILMS . . . . . .
245 5 THE 1T-2C-TYPE FERROELECTRIC MEMORY . . . . . . . . . . . . . . .
. . . . . . . . . . 246 5.1 THE CELL STRUCTURE AND BASIC OPERATION . . .
. . . . . . . . . . . . . . . . 246 5.2 EXPERIMENTAL RESULTS . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247 5.3
HIGH-DENSITY INTEGRATION . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 250 REFERENCES . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 PART
V APPLICATIONS AND FUTURE PROSPECTS FERROELECTRIC TECHNOLOGIES FOR
PORTABLE EQUIPMENT YOSHIKAZU FUJIMORI, TAKASHI NAKAMURA, AND HIDEMI
TAKASU .......... 255 1 INTRODUCTION . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 2
PROCESS TECHNOLOGIES FOR LOW-VOLTAGE OPERATION. . . . . . . . . . . . .
. . . . 256 CONTENTS XIII 2.1 EXPERIMENTAL AND CHARACTERIZATION . . . .
. . . . . . . . . . . . . . . . . . . 256 2.2 EXPERIMENTAL RESULTS . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257 3
NONVOLATILE LOGIC . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 261 3.1 THE FERROELECTRIC NONVOLATILE
LATCH . . . . . . . . . . . . . . . . . . . . . . . 261 3.2 TEST CHIP
MEASUREMENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 263 3.3 SCALING ISSUES . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 265 3.4 OTHER NONVOLATILE LATCH
CIRCUITS . . . . . . . . . . . . . . . . . . . . . . . . . 265 3.5
APPLICATIONS USING THE NONVOLATILE LATCH . . . . . . . . . . . . . . . .
. . 266 3.6 A NOVEL FUNCTIONAL DEVICE . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . 267 4 SUMMARY. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
269 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 269 THE APPLICATION OF
FERAM TO FUTURE INFORMATION TECHNOLOGY WORLD SHOICHI MASUI, SHUNSUKE
FUEKI, KOICHI MASUTANI, AMANE INOUE, TOSHIYUKI TERAMOTO, TETSUO SUZUKI,
SHOICHIRO KAWASHIMA ........... 271 1 INTRODUCTION * A PROSPECT FOR THE
FUTURE INFORMATION TECHNOLOGY WORLD . . . . . . . . . . . . . . . . . .
. 271 2 SMART CARD MARKET/SYSTEM REQUIREMENTS . . . . . . . . . . . . .
. . . . . . . . . 273 3 NONVOLATILE MEMORY CHARACTERISTICS . . . . . . .
. . . . . . . . . . . . . . . . . . . . 274 4 CONTACTLESS CARDS . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 275 5 CODE-REPROGRAMMABLE MULTI-APPLICATION CARDS . . . . . . . .
. . . . . . . . . 278 6 FUTURE TRENDS . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 282 REFERENCES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 282 INDEX
......................................................... 283
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| id | DE-604.BV017410706 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T19:17:40Z |
| institution | BVB |
| isbn | 3540407189 |
| language | English |
| lccn | 2003059057 |
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| physical | XIII, 290 S. Ill., graph. Darst. |
| publishDate | 2004 |
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| publisher | Springer |
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| series | Topics in applied physics |
| series2 | Topics in applied physics |
| spelling | Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.) Berlin Springer 2004 XIII, 290 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Topics in applied physics 93 Includes bibliographical references and index RAM - Ferroelektrikum Ferroelectric storage cells RAM (DE-588)4176909-0 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf RAM (DE-588)4176909-0 s Ferroelektrikum (DE-588)4154121-2 s DE-604 Ishiwara, Hiroshi edt Okuyama, Masanori edt Arimoto, Yoshihiro edt Topics in applied physics 93 (DE-604)BV008007504 93 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010490256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ferroelectric random access memories fundamentals and applications ; with 12 tables Topics in applied physics RAM - Ferroelektrikum Ferroelectric storage cells RAM (DE-588)4176909-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| subject_GND | (DE-588)4176909-0 (DE-588)4154121-2 |
| title | Ferroelectric random access memories fundamentals and applications ; with 12 tables |
| title_auth | Ferroelectric random access memories fundamentals and applications ; with 12 tables |
| title_exact_search | Ferroelectric random access memories fundamentals and applications ; with 12 tables |
| title_full | Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.) |
| title_fullStr | Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.) |
| title_full_unstemmed | Ferroelectric random access memories fundamentals and applications ; with 12 tables Hiroshi Ishiwara ... (ed.) |
| title_short | Ferroelectric random access memories |
| title_sort | ferroelectric random access memories fundamentals and applications with 12 tables |
| title_sub | fundamentals and applications ; with 12 tables |
| topic | RAM - Ferroelektrikum Ferroelectric storage cells RAM (DE-588)4176909-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| topic_facet | RAM - Ferroelektrikum Ferroelectric storage cells RAM Ferroelektrikum |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010490256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV008007504 |
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