High-frequency bipolar transistors: physics, modeling, applications
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin u.a.
Springer
2003
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| Schriftenreihe: | Advanced microelectronics
11 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XX, 658 S. Ill., graph. Darst. |
| ISBN: | 354067702X |
Internformat
MARC
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| 100 | 1 | |a Reisch, Michael |d 1957- |e Verfasser |0 (DE-588)131847597 |4 aut | |
| 245 | 1 | 0 | |a High-frequency bipolar transistors |b physics, modeling, applications |c M. Reisch |
| 264 | 1 | |a Berlin u.a. |b Springer |c 2003 | |
| 300 | |a XX, 658 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Advanced microelectronics |v 11 | |
| 650 | 4 | |a Bipolar transistors | |
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| 830 | 0 | |a Advanced microelectronics |v 11 |w (DE-604)BV012563021 |9 11 | |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-010247188 | |
Datensatz im Suchindex
| _version_ | 1806052754861326336 |
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| adam_text |
M. REISCH HIGH-FREQUENCY BIPOLAR TRANSISTORS PHYSICS, MODELING,
APPLICATIONS WITH 330 FIGURES SPRINGER TABLE OF CONTENTS 1. AN
INTRODUCTORY SURVEY 3 1.1 HISTORY 3 1.1.1 EARLY DEVELOPMENTS 3 1.1.2 THE
FIRST TRANSISTORS 4 1.1.3 SILICON TRANSISTORS 6 1.1.4 INTEGRATED BIPOLAR
TRANSISTORS 7 1.1.5 HETEROJUNCTION BIPOLAR TRANSISTORS 9 1.1.6 CAD,
DEVICE MODELING 10 1.1.7 APPLICATIONS 11 1.2 DEVICES, CIRCUITS, COMPACT
MODELS 12 1.2.1 CIRCUIT ELEMENTS 13 1.2.2 NONLINEAR NETWORK ELEMENTS,
SMALL-SIGNAL DESCRIPTION . 14 1.2.3 TWO-PORTS 17 1.2.4 DEVICE MODELING
21 1.3 SEMICONDUCTORS 23 1.3.1 ELECTRONS AND HOLES 23 1.3.2 THERMAL
EQUILIBRIUM 25 1.3.3 DRIFT AND DIFFUSION CURRENTS 30 1.3.4 GENERATION
AND RECOMBINATION 32 1.3.5 BASIC SEMICONDUCTOR EQUATIONS 35 1.4 PN
JUNCTIONS 36 1.4.1 PN JUNCTIONS IN THERMAL EQUILIBRIUM 36 1.4.2
FORWARD-BIASED PN JUNCTION 39 1.4.3 REVERSE-BIASED PN JUNCTION 46 1.4.4
STORED CHARGE 47 1.4.5 SWITCHING, CHARGE-CONTROL THEORY 50 1.4.6
EPITAXIAL DIODES 51 XII TABLE OF CONTENTS 1.5 BIPOLAR TRANSISTOR
PRINCIPLES 54 1.5.1 MODES OF OPERATION 54 1.5.2 TRANSFER CURRENT 56
1.5.3 CURRENT GAIN 60 1.5.4 TRANSISTOR AMPLIFIERS AND SWITCHES 62 1.5.5
LEAKAGE CURRENTS 64 1.5.6 VOLTAGE LIMITS, BREAKDOWN 65 1.5.7 SOME
DIFFERENCES OF BIPOLAR TRANSISTORS AND MOSFETS . 67 1.6 ELEMENTARY
LARGE-SIGNAL MODELS 69 1.6.1 THE ELEMENTARY TRANSISTOR MODEL 69 1.6.2
CURRENT-VOLT AGE CHARACTERISTICS 73 1.6.3 CHARGE STORAGE, CHARGE CONTROL
MODEL 75 1.6.4 SWITCHING OPERATION 77 1.7 ELEMENTARY SMALL-SIGNAL MODELS
82 1.7.1 ADMITTANCE PARAMETERS 82 1.7.2 HYBRID PARAMETERS 84 1.7.3
T-EQUIVALENT CIRCUIT 86 1.7.4 FREQUENCY LIMITS 87 1.8 NOISE MODELING 92
1.8.1 NOISE AND NOISE SOURCES 92 1.8.2 NOISE CIRCUIT ANALYSIS 95 1.8.3
NOISY LINEAR TWO-PORTS, NOISE FIGURE 99 1.8.4 BIPOLAR-TRANSISTOR NOISE
EQUIVALENT CIRCUIT 102 1.8.5 INPUT-REFERRED NOISE SOURCES 103 1.8.6
NOISE FIGURE 107 1.9 ORDERS OF MAGNITUDE 109 1.10 REFERENCES 113 2.
SEMICONDUCTOR PHYSICS REQUIRED FOR BIPOLAR-TRANSISTOR MODELING 119 2.1
BAND STRUCTURE 120 2.1.1 BLOCH FUNCTIONS 120 2.1.2 TEMPERATURE
DEPENDENCE OF BANDGAP AND INTRINSIC CARRIER DENSITY 122 2.2 THERMAL
EQUILIBRIUM 124 2.2.1 FERMI-DIRAC AND BOLTZMANN STATISTICS 124 TABLE OF
CONTENTS XIII 2.2.2 IONIZATION 127 2.3 THE BOLTZMANN EQUATION 128 2.3.1
COLLISION TERM 129 2.3.2 THERMAL EQUILIBRIUM 130 2.3.3 LIMITS OF
VALIDITY 130 2.3.4 RELAXATION TIMES 131 2.4 THE DRIFT-DIFFUSION
APPROXIMATION 132 2.4.1 THE RELAXATION TIME APPROXIMATION 132 2.4.2
TRANSPORT IN LOW ELECTRIC FIELDS 133 2.5 HYDRODYNAMIC MODEL 136 2.5.1
CONTINUITY EQUATION 136 2.5.2 CURRENT EQUATION 137 2.5.3 ENERGY BALANCE
EQUATION 138 2.6 GENERATION AND RECOMBINATION 142 2.6.1
SHOCKLEY-READ-HALL PROCESSES 142 2.6.2 AUGER RECOMBINATION 147 2.6.3
IMPACT IONIZATION 148 2.6.4 INTERBAND TUNNELING 152 2.7 HEAVILY DOPED
SEMICONDUCTORS 154 2.7.1 MODIFICATION OF THE BAND STRUCTURE 154 2.7.2
BANDGAP NARROWING IN SILICON 156 2.8 SILICON DEVICE MODELING IN THE
DRIFT-DIFFUSION APPROXIMATION 159 2.8.1 BASIC EQUATIONS OF THE
DRIFT-DIFFUSION APPROXIMATION . 159 2.8.2 MODEL EQUATIONS FOR MATERIAL
PARAMETERS 161 2.8.3 COMPACT MODELING 166 2.9 REFERENCES 168 3. PHYSICS
AND MODELING OF BIPOLAR JUNCTION TRANSISTORS 175 3.1 THE REGIONAL
APPROACH 175 3.1.1 DRIFT TRANSISTORS - HOMOGENEOUS-FIELD CASE 175 3.1.2
TRANSFER CURRENT IN FREQUENCY AND TIME DOMAINS 176 3.1.3 THE EBERS-MOLL
MODEL 179 3.1.4 THE CHARGE CONTROL MODEL 180 3.1.5 NON-QUASI-STATIC
EFFECTS 183 3.2 TRANSFER CURRENT, EARLY EFFECT 185 3.2.1 THE INTEGRAL
CHARGE CONTROL RELATION 185 XIV TABLE OF CONTENTS 3.2.2 FORWARD
OPERATION, EARLY VOLTAGE 187 3.2.3 BASE CHARGE PARTITIONING 189 3.3
EMITTER-BASE DIODE, CURRENT GAIN 192 3.3.1 MINORITY-CARRIER TRANSPORT IN
HEAVILY DOPED SILICON EMITTERS 192 3.3.2 POLYCRYSTALLINE EMITTER
CONTACTS 194 3.3.3 RECOMBINATION IN THE SPACE CHARGE LAYER 197 3.3.4
REVERSE-BIAS CURRENTS, BREAKDOWN 202 3.4 BASE-COLLECTOR DIODE, BREAKDOWN
204 3.4.1 MULTIPLICATION FACTOR 204 3.4.2 COLLECTOR-EMITTER BREAKDOWN
DUE TO IMPACT IONIZATION. 207 3.4.3 PUNCHTHROUGH 208 3.5 CHARGE STORAGE,
TRANSIT TIME 212 3.5.1 DEPLETION CAPACITANCES 212 3.5.2 HOLE CONTINUITY
AND CUTOFF FREQUENCY 213 3.5.3 FORWARD TRANSIT TIME 217 3.6 SERIES
RESISTANCES 222 3.6.1 EMITTER RESISTANCE 222 3.6.2 BASE RESISTANCE 222
3.6.3 COLLECTOR RESISTANCE, QUASI-SATURATION 226 3.7 HIGH-LEVEL
INJECTION 227 3.7.1 HIGH-LEVEL INJECTION IN THE BASE REGION 227 3.7.2
HIGH-LEVEL INJECTION IN THE COLLECTOR REGION 229 3.7.3 THE EPILAYER
MODEL OF KULL ET AL 237 3.8 THE GUMMEL-POON MODEL 239 3.8.1 TRANSFER
CURRENT AND CURRENT GAIN 239 3.8.2 BASE CURRENT COMPONENTS 241 3.8.3
CURRENT GAIN 241 3.8.4 CHARGE STORAGE 243 3.8.5 SERIES RESISTANCES 244
3.8.6 PARAMETERS 245 3.9 SMALL-SIGNAL DESCRIPTION 248 3.9.1 GIACOLETTO
SMALL-SIGNAL EQUIVALENT CIRCUIT 248 3.9.2 ADMITTANCE PARAMETERS 251
3.9.3 CARRIER MULTIPLICATION EFFECTS 256 3.9.4 NON-QUASI-STATIC EFFECTS
AND EXCESS PHASE 258 TABLE OF CONTENTS XV 3.9.5 NONLINEAR DISTORTION
EFFECTS 262 3.10 FIGURES OF MERIT 267 3.10.1 CUTOFF FREQUENCY 267 3.10.2
MAXIMUM FREQUENCY OF OSCILLATION 269 3.10.3 CML GATE DELAY AND
POWER-DELAY PRODUCT 271 3.10.4 PRODUCT OF CURRENT GAIN AND EARLY VOLTAGE
273 3.10.5 JOHNSON LIMIT 274 3.11 TEMPERATURE DEPENDENCES, SELF-HEATING
276 3.11.1 TEMPERATURE DEPENDENCES 276 3.11.2 THERMAL EQUIVALENT CIRCUIT
278 3.11.3 MITLAUFEFFEKT, THERMAL RUNAWAY 280 3.12 PARAMETER EXTRACTION
- DC MEASUREMENTS 283 3.12.1 GUMMEL PLOT 283 3.12.2 OUTPUT
CHARACTERISTICS, EARLY VOLTAGE 288 3.12.3 SERIES RESISTANCES 291 3.12.4
CARRIER MULTIPLICATION AND OPEN-BASE BREAKDOWN 295 3.12.5 THERMAL
RESISTANCE, SELF-HEATING EFFECTS 300 3.13 PARAMETER EXTRACTION - AC
MEASUREMENTS 302 3.13.1 DE-EMBEDDING 302 3.13.2 TRANSIT TIME 304 3.13.3
CAPACITANCES 305 3.13.4 THE IMPEDANCE SEMICIRCLE METHOD 307 3.14 THE
VBIC MODEL 308 3.14.1 VERTICAL NPN TRANSISTOR 308 3.14.2 PARASITIC PNP
TRANSISTOR 313 3.14.3 STORED CHARGES 313 3.14.4 TEMPERATURE EFFECTS 314
3.15 THE HICUM MODEL 316 A 3.15.1 MODELING APPROACH 320 3.15.2 TRANSFER
CURRENT 322 3.15.3 STATIC BASE CURRENT, PARASITIC PNP TRANSISTOR 324
3.15.4 SERIES RESISTANCES 324 3.15.5 CHARGE STORAGE 325 3.15.6 BC
AVALANCHE EFFECT 331 3.15.7 EMITTER-BASE TUNNELING 331 XVI TABLE OF
CONTENTS 3.15.8 TEMPERATURE EFFECTS 332 3.16 THE MEXTRAM MODEL 333
3.16.1 TRANSFER CURRENT 336 3.16.2 BASE CURRENT COMPONENTS, PARASITIC
PNP TRANSISTOR . . 337 3.16.3 EPILAYER DESCRIPTION 339 3.16.4 SERIES
RESISTANCES 342 3.16.5 CHARGE STORAGE 342 3.16.6 AVALANCHE EFFECT 345
3.16.7 TEMPERATURE EFFECTS 346 3.16.8 DISCUSSION 348 3.17 REFERENCES 349
4. PHYSICS AND MODELING OF HETEROJUNCTION BIPOLAR TRANSISTORS 359 4.1
HETEROJ UNCTIONS 361 4.1.1 THERMAL EQUILIBRIUM 362 4.1.2 FORWARD-BIASED
HETEROJUNCTION 364 4.1.3 DEPLETION CAPACITANCE 373 4.2 HETEROJUNCTION
BIPOLAR TRANSISTORS 375 4.2.1 TRANSFER CURRENT 376 4.2.2 OFFSET VOLTAGE
377 4.2.3 NONEQUILIBRIUM CARRIER TRANSPORT 378 4.3 SILICON-BASED
SEMICONDUCTOR HETEROSTRUCTURES 380 4.3.1 GROWTH OF SIGE/SI
HETEROSTRUCTURES 382 4.3.2 SIGE MATERIAL PARAMETERS 383 4.4 SIGE HBTS
387 4.4.1 TRANSFER CURRENT 388 4.4.2 BASE TRANSIT TIME 394 4.4.3
HIGH-LEVEL-INJECTION EFFECTS 395 4.4.4 COMPACT MODELS FOR SIGE HBTS 398
4.5 COMPOUND SEMICONDUCTOR HBTS 400 4.5.1 GAALAS/GAAS HBTS 400 4.5.2
INDIUM PHOSPHIDE 401 4.5.3 MICROWAVE POWER TRANSISTORS 402 4.6
REFERENCES 406 TABLE OF CONTENTS XVII 5. NOISE MODELING 411 5.1 NOISE IN
SEMICONDUCTORS 411 5.1.1 SHOT NOISE AND THERMAL NOISE 411 5.1.2
GENERATION-RECOMBINATION NOISE 417 5.1.3 LOW-FREQUENCY NOISE (1/F NOISE)
419 5.2 TRANSPORT THEORY OF NOISE 421 5.2.1 LANGEVIN APPROACH TO THE
NOISE OF OHMIC RESISTORS. . . 422 5.3 NOISE OF PN JUNCTIONS 424 5.3.1
NOISE MECHANISM OF BIASED PN JUNCTIONS 425 5.3.2 LANGEVIN APPROACH TO
THE NOISE OF PN JUNCTION DIODES . 427 5.4 NOISE GENERATED BY THE
TRANSFER CURRENT 435 5.5 HIGH-FREQUENCY NOISE EQUIVALENT CIRCUIT 440 5.6
NOISE FIGURE 443 5.6.1 NOISE CAUSED BY THE TRANSFER CURRENT 443 5.6.2
NOISE FIGURE 446 5.6.3 EFFECTS OF CARRIER MULTIPLICATION ON NOISE FIGURE
448 5.7 LOW-FREQUENCY NOISE 451 5.8 REFERENCES 455 6. BASIC CIRCUIT
CONFIGURATIONS 463 6.1 COMMON-EMITTER CONFIGURATION 463 6.1.1 BIASING
463 6.1.2 AC CHARACTERISTICS 467 6.1.3 NONLINEAR DISTORTION 470 6.2
COMMON-COLLECTOR CONFIGURATION 471 6.2.1 BASIC PRINCIPLES 471 6.2.2 AC
CHARACTERISTICS 473 6.3 COMMON-BASE CONFIGURATION 474 6.4 THE
DIODE-CONNECTED BIPOLAR TRANSISTOR 476 6.4.1 REALIZATIONS 476 6.4.2
CURRENT-VOLTAGE CHARACTERISTIC 477 6.4.3 HIGH-FREQUENCY BEHAVIOR 478 6.5
CURRENT SOURCES AND ACTIVE LOADS 479 6.5.1 CURRENT SOURCE WITH SERIES
FEEDBACK 480 6.5.2 CURRENT MIRROR 480 6.5.3 ACTIVE LOAD 484 XVIII TABLE
OF CONTENTS 6.6 DIFFERENTIAL AMPLIFIERS 485 6.6.1 DC TRANSFER
CHARACTERISTIC 486 6.6.2 DIFFERENTIAL-MODE AND COMMON-MODE VOLTAGE GAIN
. 487 6.7 ANALOG MULTIPLIERS 489 6.8 TWO-TRANSISTOR AMPLIFIER STAGES
491 6.8.1 THE DARLINGTON CONFIGURATION 491 6.8.2 THE CASCODE
CONFIGURATION 493 6.9 BANDGAP REFERENCES 494 6.10 DIGITAL CIRCUITS 497
6.10.1 CHARACTERISTICS OF DIGITAL CIRCUITS 498 6.10.2
BIPOLAR-DIGITAL-CIRCUIT TECHNIQUES 501 6.11 REFERENCES 508 7. PROCESS
INTEGRATION 511 7.1 FABRICATION OF INTEGRATED NPN TRANSISTORS 511 7.1.1
COLLECTOR ISOLATION 511 7.1.2 EMITTER AND BASE FORMATION 514 7.2 PASSIVE
COMPONENTS 521 7.2.1 RESISTORS 521 7.2.2 CAPACITORS 524 7.2.3 INDUCTORS
527 7.3 PNP TRANSISTORS 530 7.3.1 VERTICAL PNP TRANSISTORS WITH
POLYSILICON EMITTER 530 7.3.2 LATERAL PNP TRANSISTORS 531 7.4
RELIABILITY 536 7.4.1 DEVICE DEGRADATION 536 7.4.2 FAILURE OF BIPOLAR
DEVICES DUE TO ELECTROSTATIC DISCHARGES 539 7.5 REFERENCES 546 A 8.
APPLICATIONS 551 8.1 EMITTER-COUPLED LOGIC 551 8.1.1 SINGLE-ENDED,
DIFFERENTIAL AND FEEDBACK ECL 552 8.1.2 NOISE MARGIN 559 8.1.3
FLIP-FLOPS 561 8.1.4 FREQUENCY DIVIDERS 562 TABLE OF CONTENTS XIX 8.2
HIGH-SPEED OPTICAL TRANSMISSION SYSTEMS 563 8.3 RF MICROELECTRONICS 564
8.4 BICMOS 569 8.5 REFERENCES 571 A. LINEAR AND NONLINEAR RESPONSE 577
A.I LINEAR RESPONSE 577 A.1.1 STEP RESPONSE, ELMORE DELAY 578 A.2
NONLINEAR SYSTEMS WITHOUT MEMORY 580 A.2.1 HARMONIC DISTORTION, GAIN
COMPRESSION 580 A.2.2 INTERMODULATION DISTORTION 582 A.3 NONLINEAR
SYSTEMS WITH MEMORY 585 A.3.1 VOLTERRA SERIES 585 A.4 REFERENCES 586 B.
LINEAR TWO-PORTS, S-PARAMETERS 587 B.I INDEFINITE ADMITTANCE MATRIX 587
B.2 TERMINATED TWO-PORTS 588 B.2.1 INPUT AND OUTPUT IMPEDANCE 589 B.2.2
VOLTAGE AND CURRENT GAIN 589 B.2.3 POWER GAIN 590 B.2.4 STABILITY 594
B.2.5 INCIDENT AND REFLECTED POWER 595 B.3 S-PARAMETERS 597 B.3.1
RELATIONS BETWEEN S-PARAMETERS AND TWO-PORT PARAMETERS 598 B.3.2
MATCHING AND POWER GAIN 599 B.4 REFERENCES 600 C. PN JUNCTIONS: DETAILS
601 C.I BOUNDARY CONDITIONS AT PN JUNCTIONS 601 C.2 EPITAXIAL DIODE 603
C.3 MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED EMITTER REGIONS 605 C.4
HIGH-FREQUENCY DIODE ADMITTANCE 608 C.5 REFERENCES 610 D. BIPOLAR
TRANSISTOR: DETAILS 611 XX TABLE OF CONTENTS D.I DRIFT TRANSISTOR 611
D.I.I ELECTRON TRANSPORT THROUGH THE BASE REGION 611 D.I.2 COMPUTATION
OF A,2I(T) 613 D.1.3 EXCESS PHASE 613 D.I.4 COLLECTOR TRANSIT TIME 614
D.I.5 SMALL-SIGNAL ANALYSIS 615 D.2 QUASI-THREE-DIMENSIONAL COMPUTATIONS
OF THE BASE RESISTANCE 617 D.3 GENERATION OF MODEL PARAMETERS FROM
LAYOUT DATA 620 D.4 GENERALIZATION OF THE GUMMEL TRANSFER CURRENT
RELATION TO ARBITRARY GEOMETRIES 621 D.5 DEFINITION OF SERIES
RESISTANCES WITHIN THE INTEGRAL CHARGE CONTROL RELATION 623 D.6
MULTIPLICATION FACTOR 625 D.7 REFERENCES 626 E. NOISE: DETAILS 627 E.I
SOME STATISTICS 627 E.I.I STOCHASTIC VARIABLES, CORRELATION 627 E.I.2
ENSEMBLE AVERAGE, DISTRIBUTION FUNCTION 628 E.I.3 SPECTRAL DENSITY 629
E.1.4 CARSON THEOREM, SHOT NOISE 629 E.2 VELOCITY FLUCTUATIONS AND
DIFFUSION 630 E.3 THERMODYNAMICS AND NOISE 632 E.4
GENERATION-RECOMBINATION NOISE 634 E.5 MCWORTHER MODEL OF 1/F NOISE 636
E.6 SHORT-BASE DIODE WITH METAL CONTACT 637 E.7 SHORT-BASE DIODE WITH
POLYSILICON CONTACT 639 E.8 EQUIVALENT-CIRCUIT REPRESENTATION OF
TRANSFER CURRENT NOISE . . 641 A E.9 REFERENCES 644 P. OVERTEMPERATURE
DEVELOPED DURING ELECTROSTATIC DISCHARGES 645 F.I THERMAL CONDUCTIVITY
645 F.2 TRANSIENT OVERTEMPERATURE DURING A SHORT PULSE 646 F.3
REFERENCES 648 |
| any_adam_object | 1 |
| author | Reisch, Michael 1957- |
| author_GND | (DE-588)131847597 |
| author_facet | Reisch, Michael 1957- |
| author_role | aut |
| author_sort | Reisch, Michael 1957- |
| author_variant | m r mr |
| building | Verbundindex |
| bvnumber | BV016964057 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.96.B55 |
| callnumber-search | TK7871.96.B55 |
| callnumber-sort | TK 47871.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4850 |
| classification_tum | ELT 315f |
| ctrlnum | (OCoLC)51613982 (DE-599)BVBBV016964057 |
| dewey-full | 621.3815/28 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/28 |
| dewey-search | 621.3815/28 |
| dewey-sort | 3621.3815 228 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV016964057 |
| illustrated | Illustrated |
| indexdate | 2024-07-31T00:35:26Z |
| institution | BVB |
| isbn | 354067702X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010247188 |
| oclc_num | 51613982 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-859 DE-861 DE-573 DE-898 DE-BY-UBR DE-522 DE-634 DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-859 DE-861 DE-573 DE-898 DE-BY-UBR DE-522 DE-634 DE-706 |
| physical | XX, 658 S. Ill., graph. Darst. |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Springer |
| record_format | marc |
| series | Advanced microelectronics |
| series2 | Advanced microelectronics |
| spelling | Reisch, Michael 1957- Verfasser (DE-588)131847597 aut High-frequency bipolar transistors physics, modeling, applications M. Reisch Berlin u.a. Springer 2003 XX, 658 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Advanced microelectronics 11 Bipolar transistors Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 s DE-604 Advanced microelectronics 11 (DE-604)BV012563021 11 HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010247188&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Reisch, Michael 1957- High-frequency bipolar transistors physics, modeling, applications Advanced microelectronics Bipolar transistors Bipolartransistor (DE-588)4145669-5 gnd |
| subject_GND | (DE-588)4145669-5 |
| title | High-frequency bipolar transistors physics, modeling, applications |
| title_auth | High-frequency bipolar transistors physics, modeling, applications |
| title_exact_search | High-frequency bipolar transistors physics, modeling, applications |
| title_full | High-frequency bipolar transistors physics, modeling, applications M. Reisch |
| title_fullStr | High-frequency bipolar transistors physics, modeling, applications M. Reisch |
| title_full_unstemmed | High-frequency bipolar transistors physics, modeling, applications M. Reisch |
| title_short | High-frequency bipolar transistors |
| title_sort | high frequency bipolar transistors physics modeling applications |
| title_sub | physics, modeling, applications |
| topic | Bipolar transistors Bipolartransistor (DE-588)4145669-5 gnd |
| topic_facet | Bipolar transistors Bipolartransistor |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010247188&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV012563021 |
| work_keys_str_mv | AT reischmichael highfrequencybipolartransistorsphysicsmodelingapplications |