Epitaxial growth of Si and 3C-SiC by chemical vapor deposition:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
2002
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | München, Techn. Univ., Diss., 2002 |
| Beschreibung: | VII, 96 Bl. Ill., graph. Darst. |
Internformat
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Datensatz im Suchindex
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TABLE OF CONTENT - PART I -
-PART I-
EPITAXIAL GROWTH OF 3C-SIC BY LPCVD
SUMMARY.IJJ
ZUSAMMENFASSUNG. .-.IV
GLOSSARY. .VI
1 INTRODUCTION TO SIC DEPOSITION.1
1.1 SIC PROPERTIES.1
1.1.1 POLYTYPES.4
1.1.2 OPTICAL AND ELECTRONIC PROPERTIES.6
1.2 SIC-BASED ELECTRONIC DEVICES.10
1.2.1 OXIDATION.10
1.2.2 DOPING.10
1.2.3 ION IMPLANTATION.11
1.2.4 CONTACTS.11
1.2.5 ETCHING.12
1.2.5.1 PLASMA ETCHING.12
1.2.5.2 ELECTROCHEMICAL ETCHING.13
1.2.6 DEVICES.13
1.3 PRODUCTION OF SIC.14
1.3.1 ACHESON PROCESS. 14
1.3.2 VAN-ARKEL PROCESS.14
1.3.3 LELY PROCESS.14
1.3.4 LIQUID PHASE EPITAXY (LPE).15
1.3.5 MOLECULAR BEAM EPITAXY (MBE).16
1.3.6 CHEMICAL VAPOR DEPOSITION.16
1.3.6.1 HOMOEPITAXY.18
1.3.6.2 HETEROEPITAXY.18
1.3.7 METHYLTRICHLOROSILANE (MTS) DEPOSITION.20
1.3.8 ALTERNATIVE THIN SIC-FILM PRODUCTION TECHNIQUE.22
2 PREPARATION OF 3C-SIC.23
2.1 SCHEMATICS OF THE APPARATUS FOR HETEROEPITAXY OF 3C-SIC (100).23
2.1.1 SUBSTRATE-HOLDER AND MANIPULATOR SYSTEM.25
2.1.2 SUBSTRATE TEMPERATURE ADJUSTMENT.26
BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/966654986
TABLE OF CONTENT
-
PART I -
2.2 METHYLTRICHLOROSILANE (MTS) PRECURSOR.27
2.3 PROCESS SEQUENCE.27
3 CHARACTERIZATION OF 3C-SIC EPITAXIAL FILMS.29
3.1 X-RAY DIFFRACTION.29
3.2 RAMAN SPECTROSCOPY.33
3.2.1 MICRO RAMAN APPARATUS.'.34
3.2.2 3C-SIC RAMAN MEASUREMENT.35
3.3 XPS.39
3.4 SCANNING ELECTRON MICROSCOPY (SEM).40
3.5 X-RAY DIFFRACTION MEASUREMENTS.41
3.6 UV SPECTROSCOPY.41
3.7 CONDUCTIVITY AND HALL EFFECT MEASUREMENTS.43
3.8 TRANSMISSION ELECTRON MICROSCOPY (TEM).46
3.9 PHOTOLUMINESCENCE (PL).48
4 CONCLUSION OF PART 1.52 |
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| author_facet | Zaia, Gilberto Vitor 1962- |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV016961669 |
| illustrated | Illustrated |
| indexdate | 2024-11-22T17:36:19Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010245014 |
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| physical | VII, 96 Bl. Ill., graph. Darst. |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
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| spelling | Zaia, Gilberto Vitor 1962- Verfasser (DE-588)12448199X aut Epitaxial growth of Si and 3C-SiC by chemical vapor deposition Gilberto Vitor Zaia 2002 VII, 96 Bl. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 2002 Silicium (DE-588)4077445-4 gnd rswk-swf Kristallfläche (DE-588)4151344-7 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Kristallfläche (DE-588)4151344-7 s Siliciumcarbid (DE-588)4055009-6 s CVD-Verfahren (DE-588)4009846-1 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010245014&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Zaia, Gilberto Vitor 1962- Epitaxial growth of Si and 3C-SiC by chemical vapor deposition Silicium (DE-588)4077445-4 gnd Kristallfläche (DE-588)4151344-7 gnd CVD-Verfahren (DE-588)4009846-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4151344-7 (DE-588)4009846-1 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Epitaxial growth of Si and 3C-SiC by chemical vapor deposition |
| title_auth | Epitaxial growth of Si and 3C-SiC by chemical vapor deposition |
| title_exact_search | Epitaxial growth of Si and 3C-SiC by chemical vapor deposition |
| title_full | Epitaxial growth of Si and 3C-SiC by chemical vapor deposition Gilberto Vitor Zaia |
| title_fullStr | Epitaxial growth of Si and 3C-SiC by chemical vapor deposition Gilberto Vitor Zaia |
| title_full_unstemmed | Epitaxial growth of Si and 3C-SiC by chemical vapor deposition Gilberto Vitor Zaia |
| title_short | Epitaxial growth of Si and 3C-SiC by chemical vapor deposition |
| title_sort | epitaxial growth of si and 3c sic by chemical vapor deposition |
| topic | Silicium (DE-588)4077445-4 gnd Kristallfläche (DE-588)4151344-7 gnd CVD-Verfahren (DE-588)4009846-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Silicium Kristallfläche CVD-Verfahren Siliciumcarbid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010245014&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT zaiagilbertovitor epitaxialgrowthofsiand3csicbychemicalvapordeposition |