Silicon-germanium heterojunction bipolar transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Artech House
2003
|
| Schlagworte: | |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | xviii, 570 p. ill : 24 cm |
| ISBN: | 1580533612 |
Internformat
MARC
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| 008 | 021105s2003 xxua||| |||| 00||| eng d | ||
| 010 | |a 2002038276 | ||
| 020 | |a 1580533612 |c alk. paper |9 1-580-53361-2 | ||
| 035 | |a (OCoLC)50919766 | ||
| 035 | |a (DE-599)BVBBV014860309 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 044 | |a xxu |c US | ||
| 049 | |a DE-706 | ||
| 050 | 0 | |a TK7871.96.B55 | |
| 082 | 0 | |a 621.3815/28 |2 21 | |
| 100 | 1 | |a Cressler, John D. |d 1961- |e Verfasser |0 (DE-588)140008055 |4 aut | |
| 245 | 1 | 0 | |a Silicon-germanium heterojunction bipolar transistors |c John D. Cressler, Guofu Niu |
| 264 | 1 | |a Boston, MA |b Artech House |c 2003 | |
| 300 | |a xviii, 570 p. |b ill : 24 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 650 | 4 | |a Bipolar transistors | |
| 650 | 4 | |a Germanium | |
| 700 | 1 | |a Niu, Guofu |e Sonstige |4 oth | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-010049096 | ||
Datensatz im Suchindex
| _version_ | 1804129621498658816 |
|---|---|
| any_adam_object | |
| author | Cressler, John D. 1961- |
| author_GND | (DE-588)140008055 |
| author_facet | Cressler, John D. 1961- |
| author_role | aut |
| author_sort | Cressler, John D. 1961- |
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| building | Verbundindex |
| bvnumber | BV014860309 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.96.B55 |
| callnumber-search | TK7871.96.B55 |
| callnumber-sort | TK 47871.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)50919766 (DE-599)BVBBV014860309 |
| dewey-full | 621.3815/28 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/28 |
| dewey-search | 621.3815/28 |
| dewey-sort | 3621.3815 228 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV014860309 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T19:08:03Z |
| institution | BVB |
| isbn | 1580533612 |
| language | English |
| lccn | 2002038276 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010049096 |
| oclc_num | 50919766 |
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| physical | xviii, 570 p. ill : 24 cm |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Artech House |
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| spelling | Cressler, John D. 1961- Verfasser (DE-588)140008055 aut Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu Boston, MA Artech House 2003 xviii, 570 p. ill : 24 cm txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Bipolar transistors Germanium Niu, Guofu Sonstige oth |
| spellingShingle | Cressler, John D. 1961- Silicon-germanium heterojunction bipolar transistors Bipolar transistors Germanium |
| title | Silicon-germanium heterojunction bipolar transistors |
| title_auth | Silicon-germanium heterojunction bipolar transistors |
| title_exact_search | Silicon-germanium heterojunction bipolar transistors |
| title_full | Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu |
| title_fullStr | Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu |
| title_full_unstemmed | Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu |
| title_short | Silicon-germanium heterojunction bipolar transistors |
| title_sort | silicon germanium heterojunction bipolar transistors |
| topic | Bipolar transistors Germanium |
| topic_facet | Bipolar transistors Germanium |
| work_keys_str_mv | AT cresslerjohnd silicongermaniumheterojunctionbipolartransistors AT niuguofu silicongermaniumheterojunctionbipolartransistors |