Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
2002
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Hamburg-Harburg, Techn. Univ., Diss., 2002 |
| Beschreibung: | IV, 115 S. Ill., graph. Darst. : 30 cm |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV014851439 | ||
| 003 | DE-604 | ||
| 007 | t | ||
| 008 | 021024s2002 gw ad|| m||| 00||| eng d | ||
| 016 | 7 | |a 965147622 |2 DE-101 | |
| 035 | |a (OCoLC)248427857 | ||
| 035 | |a (DE-599)BVBBV014851439 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-29T |a DE-91 |a DE-83 | ||
| 084 | |a ELT 321d |2 stub | ||
| 084 | |a ELT 358d |2 stub | ||
| 100 | 1 | |a Sell, Bernhard |d 1972- |e Verfasser |0 (DE-588)124036546 |4 aut | |
| 245 | 1 | 0 | |a Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors |c von Bernhard Sell |
| 264 | 1 | |c 2002 | |
| 300 | |a IV, 115 S. |b Ill., graph. Darst. : 30 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Hamburg-Harburg, Techn. Univ., Diss., 2002 | ||
| 650 | 4 | |a Dynamisches RAM - MOS | |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dynamisches RAM |0 (DE-588)4150935-3 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Dynamisches RAM |0 (DE-588)4150935-3 |D s |
| 689 | 0 | 1 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010046696&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-010046696 | |
Datensatz im Suchindex
| _version_ | 1812460516571873280 |
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| adam_text |
CONTENTS
LIST OF SYMBOLS III
1 INTRODUCTION 1
1.1 DYNAMIC RANDOM ACCESS MEMORY. 1
1.2 MOS FIELD-EFFECT TRANSISTOR. 3
1.3 ADVANCED ELECTRODE MATERIALS. 5
2 CHARACTERIZATION METHODS 7
2.1 CV-MEASUREMENTS ON MIS-STRUCTURES . 7
2.1.1 DYNAMIC CV-MEASUREMENTS. 7
2.1.2 EXTRACTION OF PHYSICAL PARAMETERS FROM CV-CURVES. 13
2.1.3 PARASITIC COMPONENTS DURING CV-MEASUREMENTS. 14
2.2 IV-MEASUREMENTS ON MIS-STRUCTURES. 15
2.2.1 CARRIER TRANSPORT THROUGH DIELECTRICS. 15
2.2.2 MEASURING IV-CHARACTERISTICS. 17
2.3 CHARGE PUMPING. 18
2.3.1 CLASSICAL CHARGE PUMPING. 20
2.3.2 DRAIN-CURRENT CHARGE PUMPING. 22
2.4 DETERMINATION OF MOSFET-CHARACTERISTICS. 22
2.4.1 THRESHOLD VOLTAGE OF TRANSISTORS. 23
2.4.2 DETERMINATION OF SUBSTRATE DOPING. 23
2.4.3 ANALYSIS OF THE TRANSFER CHARACTERISTICS. 24
2.4.4 ANALYSIS OF TRANSISTOR PARAMETERS .25
2.5 SUMMARY. 25
3 TEST STRUCTURES FOR CHARACTERIZATION 27
3.1 STANDARD CMOS PROCESS. 27
3.2 PROCESS FLOW OF MIS-STRUCTURES.28
3.2.1 PLANAR CAPACITORS WITH METALLIC SUBSTRATE ELECTRODES.28
3.2.2 PLANAR CAPACITORS WITH METAL GATE ELECTRODES. 29
3.2.3 MODIFIED CMOS PROCESS WITH METAL GATE.29
3.2.4 DEEP TRENCH CAPACITORS WITH METAL ELECTRODES. 30
3.3 REQUIRED TEST STRUCTURES .31
3.3.1 TEST STRUCTURES ON SHORT LOOPS. 31
3.3.2 TEST STRUCTURES ON FULLY INTEGRATED WAFERS.32
3.3.3 ON-CHIP SIGNAL AMPLIFICATION.34
3.3.4 REQUIREMENTS FOR THE MASK LAYOUT.38
3.4 SUMMARY. 39
I
BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/965147622
JJ
CONTENTS
4 TECHNOLOGY DEVELOPMENT 41
4.1 PROCESS TECHNOLOGY OF PLANAR TEST STRUCTURES.41
4.1.1 CAPACITORS WITH METAL SUBSTRATE ELECTRODES.41
4.1.2 CAPACITORS WITH METAL GATE ELECTRODES .43
4.2 PROCESS DEVELOPMENT FOR DEEP TRENCH CAPACITORS.47
4.2.1 DEPOSITION TECHNIQUES.47
4.2.2 TUNGSTEN-NITRIDE ALD.48
4.2.3 TUNGSTEN SILICIDE DEPOSITION .49
4.2.4 TUNGSTEN DEPOSITION.63
4.2.5 STRUCTURING OF TUNGSTEN ELECTRODES.65
4.2.6 POLYSILICON DEPOSITION ON METALS.65
4.3 SUMMARY.66
5 CHARACTERIZATION OF RTP TUNNEL-OXIDES 67
5.1 CV-MEASUREMENTS ON TUNNEL-OXIDES.67
5.2 CHARACTERIZATION OF SILICON ELECTRODES . 70
5.3 LEAKAGE CURRENT THROUGH TUNNEL-OXIDES. 71
5.4 INTERFACE PROPERTIES OF RTP-TUNNEL-OXIDES . 78
5.5 MODIFIED CMOS-PROCESS WITH RTP-OXIDES.80
5.6 SUMMARY.81
6 CHARACTERIZATION OF METAL ELECTRODES 83
6.1 INTERFACE CHARACTERISTICS OF METAL SUBSTRATE ELECTRODES.83
6.2 ELECTRICAL PROPERTIES OF METAL GATE ELECTRODES.84
6.2.1 WSIX-GATE ELECTRODES.84
6.2.2 TIN-GATE ELECTRODES: INTERFACE PROPERTIES.85
6.2.3 TIN-GATE ELECTRODES: LEAKAGE CURRENT.91
6.2.4 TIN-GATE ELECTRODES: THERMAL STABILITY.92
6.3 THERMAL STABILITY OF POLYSILICON/METAL GATE ELECTRODES.92
6.3.1 POLVSILICON/WSIX-GATE ELECTRODES .93
6.3.2 POLYSILICON/TIN-GATE ELECTRODES.95
6.4 METAL ELECTRODES FOR DRAM CAPACITORS.97
6.4.1 MATERIAL PROPERTIES OF THIN METAL LAYERS.97
6.4.2 METAL ELECTRODES IN DEEP TRENCH SHORT LOOPS.100
6.5 SUMMARY.160
7 CONCLUSION 163
7.1 METAL-GATE MOS-STRUCTURES.103
7.2 METAL ELECTRODES FOR DRAM-CAPACITORS.104
7.3 FUTURE ASPECTS.164 |
| any_adam_object | 1 |
| author | Sell, Bernhard 1972- |
| author_GND | (DE-588)124036546 |
| author_facet | Sell, Bernhard 1972- |
| author_role | aut |
| author_sort | Sell, Bernhard 1972- |
| author_variant | b s bs |
| building | Verbundindex |
| bvnumber | BV014851439 |
| classification_tum | ELT 321d ELT 358d |
| ctrlnum | (OCoLC)248427857 (DE-599)BVBBV014851439 |
| discipline | Elektrotechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV014851439</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">021024s2002 gw ad|| m||| 00||| eng d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">965147622</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)248427857</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV014851439</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 321d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 358d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sell, Bernhard</subfield><subfield code="d">1972-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)124036546</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors</subfield><subfield code="c">von Bernhard Sell</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">IV, 115 S.</subfield><subfield code="b">Ill., graph. Darst. : 30 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Hamburg-Harburg, Techn. Univ., Diss., 2002</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dynamisches RAM - MOS</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dynamisches RAM</subfield><subfield code="0">(DE-588)4150935-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Dynamisches RAM</subfield><subfield code="0">(DE-588)4150935-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010046696&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-010046696</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV014851439 |
| illustrated | Illustrated |
| indexdate | 2024-10-09T18:04:01Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010046696 |
| oclc_num | 248427857 |
| open_access_boolean | |
| owner | DE-29T DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-29T DE-91 DE-BY-TUM DE-83 |
| physical | IV, 115 S. Ill., graph. Darst. : 30 cm |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| record_format | marc |
| spelling | Sell, Bernhard 1972- Verfasser (DE-588)124036546 aut Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors von Bernhard Sell 2002 IV, 115 S. Ill., graph. Darst. : 30 cm txt rdacontent n rdamedia nc rdacarrier Hamburg-Harburg, Techn. Univ., Diss., 2002 Dynamisches RAM - MOS MOS (DE-588)4130209-6 gnd rswk-swf Dynamisches RAM (DE-588)4150935-3 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Dynamisches RAM (DE-588)4150935-3 s MOS (DE-588)4130209-6 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010046696&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Sell, Bernhard 1972- Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors Dynamisches RAM - MOS MOS (DE-588)4130209-6 gnd Dynamisches RAM (DE-588)4150935-3 gnd |
| subject_GND | (DE-588)4130209-6 (DE-588)4150935-3 (DE-588)4113937-9 |
| title | Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors |
| title_auth | Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors |
| title_exact_search | Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors |
| title_full | Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors von Bernhard Sell |
| title_fullStr | Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors von Bernhard Sell |
| title_full_unstemmed | Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors von Bernhard Sell |
| title_short | Interface characterization of metal gate MOS-structures and the application to DRAM-capacitors |
| title_sort | interface characterization of metal gate mos structures and the application to dram capacitors |
| topic | Dynamisches RAM - MOS MOS (DE-588)4130209-6 gnd Dynamisches RAM (DE-588)4150935-3 gnd |
| topic_facet | Dynamisches RAM - MOS MOS Dynamisches RAM Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010046696&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT sellbernhard interfacecharacterizationofmetalgatemosstructuresandtheapplicationtodramcapacitors |