Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
2002
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | München, Techn. Univ., Diss., 2002 |
| Beschreibung: | 129 S. Ill., graph. Darst. |
Internformat
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| 100 | 1 | |a Hartig, Prosper |d 1971- |e Verfasser |0 (DE-588)124071708 |4 aut | |
| 245 | 1 | 0 | |a Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions |c Prosper Hartig |
| 264 | 1 | |c 2002 | |
| 300 | |a 129 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a München, Techn. Univ., Diss., 2002 | ||
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| 650 | 0 | 7 | |a Kristallfläche |0 (DE-588)4151344-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Diazoniumverbindungen |0 (DE-588)4192798-9 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
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| adam_text |
TABLE OF CONTENTS
1
INTRODUCTION 4
1 THIN ORGANIC LAYERS 9
1.1 IMPORTANT APPLICATIONS 9
1.2 DEPOSITION OF ORGANIC MLS ON SEMICONDUCTOR SURFACES 11
1.3 MECHANISMS OF THE CHEMICAL DEPOSITION OF ORGANIC
MONOLAYERS ON SI SURFACES 12
1.3.1 DEPOSITION FROM GAS PHASE IN VACUUM 12
1.3.2 DEPOSITION FROM LIQUIDS 14
1.4 ELECTROCHEMICAL DEPOSITION OF ORGANIC BENZENE
COMPOUNDS FROM DIAZONIUM SALT SOLUTIONS 18
1.5 SOME IMPORTANT ELECTRONIC PROPERTIES OF
ORGANIC LAYERS ON SURFACES 22
1.5.1 CHARGE TRANSFER VIA ORGANIC MONOLAYERS 22
1.5.2 SURFACE DIPOLE OF ORGANIC LAYERS ON METALS,
SEMICONDUCTORS AND ORGANICS 23
1.5.3 ELECTRONIC GAP STATES AT THE SEMICONDUCTOR / ORGANIC ML
INTERFACE 25
2 DIPOLE MOMENTS OF DIAZONIUM IONS, RADICALS AND MOLECULES -
THEORETICAL CONSIDERATIONS 26
2.1 QUANTUM MECHANICAL CALCULATIONS 26
2.1.1 SEMI-EMPIRICAL APPROACH 26
2.1.2 HARTREE-FOCK METHOD 27
2.1.3 DENSITY FUNCTIONAL THEORY 28
2.1.4 CALCULATION OF DIPOLE MOMENTS OF BENZENE IONS,
RADICALS AND MOLECULES Z 30
2.2 CHARGE DISTRIBUTION ON ISO ELECTRON DENSITY SURFACES AND
DIPOLE MOMENTS FOR SOME BENZENE COMPOUNDS 33
2.2.1 UNCHANGED DIRECTION OF THE DIPOLE MOMENTS FOR ION,
RADICAL AND MOLECULE 33
2.2.2 CHANGE IN DIRECTION OF THE DIPOLE MOMENTS FOR ION,
RADICAL AND MOLECULE 36
2.2.3 OVERVIEW OF THE DIPOLE MOMENTS OF SOME BENZENE COMPOUNDS 39
BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/965506851
2
TABLE OF CONTENTS
2.3 DIPOLE MOMENTS OF BENZENE COMPOUNDS GRAFTED TO SILICON
AND THE ROLE OF WATER MOLECULES 41
2.3.1 THE HYDROGEN TERMINATED SI CLUSTER 41
2.3.2 BENZENE COMPOUNDS BOUND TO A CLUSTER OF 4 SI-ATOMS 43
2.3.3 INFLUENCE OF WATER MOLECULES ON THE DIPOLE MOMENTS
OF BENZENE COMPOUNDS 47
3
EXPERIMENTAL METHODS AND PROCEDURES
50
3.1 IN-SITU CHARACTERIZATION OF ELECTRONIC PROPERTIES OF SI SURFACES 50
3.1.1 CHARACTERIZATION OF THE SURFACE RECOMBINATION
VELOCITY BY THE PULSED PHOTOLUMINESCENCE TECHNIQUE 50
3.1.2 THE PULSED SURFACE PHOTOVOLTAGE TECHNIQUE 54
3.1.3 ELECTROCHEMISTRY 57
3.2 ELECTROCHEMICAL DEPOSITION OF BENZENE COMPOUNDS 61
3.2.1 THE STANDARD METHOD 61
3.2.2 ADVANCED INJECTION METHOD 63
3.2.3 THE EXPERIMENTAL SET-UP FOR IN-SITU MEASUREMENTS 66
3.2.4 SAMPLE PRE-TREATMENT AND SOLUTIONS 68
3.2.5. ADDITIONAL TECHNIQUES FOR SURFACE CHARACTERIZATION 72
4 ELECTROCHEMICAL DEPOSITION OF BENZENE COMPOUNDS
ON SI(L 11) SURFACES 74
4.1 TIME DEPENDENT CURRENT DURING THE ELECTROCHEMICAL
DEPOSITION OF BENZENE COMPOUNDS ON SI(L 11) SURFACES 74
4.1.1 DEPOSITION OF 4-NITROBENZENE ON DIFFERENT
KINDS OF SI(L 11) SURFACES 74
4.1.2 DEPOSITION OF DIFFERENT BENZENE COMPOUNDS
ON FLAT HYDROGENATED SI(L 11) SURFACES 78
4.1.3 THE ROLE OF CHLORINE AND ZNCB DURING THE
ELECTROCHEMICAL DEPOSITION 82
4.2 ADSORPTION SITE AND DIFFUSION LIMITED
ELECTROCHEMICAL DEPOSITION 83
4.2.1 ADSORPTION SITE LIMITED DEPOSITION OF BENZENE
COMPOUNDS ON FLAT HYDROGENATED SI( 111) SURFACES 83
4.2.2 DIFFUSION LIMITED DEPOSITION 86
4.3 STRUCTURAL CHANGES AT THE SI(LL 1) / GRAFTED ORGANIC
LAYER INTERFACE 89
TABLE OF CONTENTS
3
4.3.1 AGGLOMERATION AT IMPERFECTIONS DURING THE
ELECTROCHEMICAL DEPOSITION PROCESS 89
4.3.2 NEXAFS AND TDS OF THIN ORGANIC LAYERS ON SI SURFACES 91
4.3.3 ELECTROCHEMICAL STABILITY OF 4-BROMOBENZENE GRAFTED
ELECTROCHEMICALLY AT THE FLAT HYDROGENATED SI(L 11) SURFACE 94
5 ELECTRONIC PROPERTIES OF P-SI(LLL) SURFACES DURING
ELECTROCHEMICAL GRAFTING OF BENZENE COMPOUNDS 98
5.1 NON-RADIATIVE SURFACE RECOMBINATION AT P-SI(L 11) SURFACES
DURING ELECTROCHEMICAL GRAFTING OF BENZENE COMPOUNDS 98
5.1.1 NON-RADIATIVE SURFACE RECOMBINATION DURING DEPOSITION OF
4-NITROBENZENE ON DIFFERENT KINDS OF SI( 111) SURFACES 98
5.1.2 NON-RADIATIVE SURFACE RECOMBINATION DURING
DEPOSITION OF DIFFERENT BENZENE COMPOUNDS
ON FLAT HYDROGENATED SI( 111) SURFACES 100
5.1.3 STABILITY OF P-SI(111) SURFACES COVERED WITH
ELECTROCHEMICALLY DEPOSITED BENZENE LAYERS IN AIR 105
5.2 BAND BENDING AT P-SI(L 11) SURFACES DURING
ELECTROCHEMICAL GRAFTING OF BENZENE COMPOUNDS 106
5.2.1 BAND BENDING DURING DEPOSITION OF 4-NITROBENZENE
ON DIFFERENT KINDS OF SI(L 11) SURFACES 106
5.2.2 BAND BENDING DURING DEPOSITION OF DIFFERENT BENZENE
COMPOUNDS ON FLAT HYDROGENATED SI(L 11) SURFACES 108
5.2.3 CORRELATION BETWEEN BAND BENDING AND
DIPOLE MOMENT OF BENZENE MOLECULES 114
5.2.4 EX-SITU PHOTOVOLTAGE MEASUREMENTS ON
P-SI(L 11) COVERED WITH 4-METHOXYBENZENE 115
SUMMARY 118
REFERENCES 121
PUBLICATION LIST 127
CURRICULUM VITAE 128
ACKNOWLEDGEMENT
129 |
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| author | Hartig, Prosper 1971- |
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| author_facet | Hartig, Prosper 1971- |
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| discipline | Physik |
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| illustrated | Illustrated |
| indexdate | 2024-11-22T17:34:49Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010032833 |
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| owner_facet | DE-91 DE-BY-TUM DE-12 |
| physical | 129 S. Ill., graph. Darst. |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
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| spelling | Hartig, Prosper 1971- Verfasser (DE-588)124071708 aut Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions Prosper Hartig 2002 129 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 2002 Silicium (DE-588)4077445-4 gnd rswk-swf Galvanische Abscheidung (DE-588)4316091-8 gnd rswk-swf Kristallfläche (DE-588)4151344-7 gnd rswk-swf Diazoniumverbindungen (DE-588)4192798-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Kristallfläche (DE-588)4151344-7 s Diazoniumverbindungen (DE-588)4192798-9 s Galvanische Abscheidung (DE-588)4316091-8 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010032833&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Hartig, Prosper 1971- Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions Silicium (DE-588)4077445-4 gnd Galvanische Abscheidung (DE-588)4316091-8 gnd Kristallfläche (DE-588)4151344-7 gnd Diazoniumverbindungen (DE-588)4192798-9 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4316091-8 (DE-588)4151344-7 (DE-588)4192798-9 (DE-588)4113937-9 |
| title | Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions |
| title_auth | Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions |
| title_exact_search | Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions |
| title_full | Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions Prosper Hartig |
| title_fullStr | Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions Prosper Hartig |
| title_full_unstemmed | Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions Prosper Hartig |
| title_short | Engineering of Si(111) surfaces by electrochemical deposition of organic layers from diazonium salt solutions |
| title_sort | engineering of si 111 surfaces by electrochemical deposition of organic layers from diazonium salt solutions |
| topic | Silicium (DE-588)4077445-4 gnd Galvanische Abscheidung (DE-588)4316091-8 gnd Kristallfläche (DE-588)4151344-7 gnd Diazoniumverbindungen (DE-588)4192798-9 gnd |
| topic_facet | Silicium Galvanische Abscheidung Kristallfläche Diazoniumverbindungen Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010032833&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT hartigprosper engineeringofsi111surfacesbyelectrochemicaldepositionoforganiclayersfromdiazoniumsaltsolutions |