Physiochemical principles of semiconductor doping:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Jerusalem
Israel Program for Scientific Transl.
1968
|
| Schlagworte: | |
| Beschreibung: | XII, 380 S. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV014814663 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 021018s1968 |||| 00||| eng d | ||
| 035 | |a (OCoLC)633595605 | ||
| 035 | |a (DE-599)BVBBV014814663 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 | ||
| 100 | 1 | |a Glazov, Vasilij M. |e Verfasser |4 aut | |
| 240 | 1 | 0 | |a Fiziko-chimičeskie osnovy legirovanija poluprovodnikov |
| 245 | 1 | 0 | |a Physiochemical principles of semiconductor doping |c V. M. Glazov and V. S. Zemskov. Transl. from Russ. by Ch. Nisenbaum ... |
| 264 | 1 | |a Jerusalem |b Israel Program for Scientific Transl. |c 1968 | |
| 300 | |a XII, 380 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Binäres System |0 (DE-588)4191271-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterschicht |0 (DE-588)4158812-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a Germanium |0 (DE-588)4135644-5 |D s |
| 689 | 0 | 2 | |a Binäres System |0 (DE-588)4191271-8 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterschicht |0 (DE-588)4158812-5 |D s |
| 689 | 1 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Zemskov, V. S. |e Verfasser |4 aut | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-010024072 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804129587143114752 |
|---|---|
| any_adam_object | |
| author | Glazov, Vasilij M. Zemskov, V. S. |
| author_facet | Glazov, Vasilij M. Zemskov, V. S. |
| author_role | aut aut |
| author_sort | Glazov, Vasilij M. |
| author_variant | v m g vm vmg v s z vs vsz |
| building | Verbundindex |
| bvnumber | BV014814663 |
| ctrlnum | (OCoLC)633595605 (DE-599)BVBBV014814663 |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01552nam a2200409 c 4500</leader><controlfield tag="001">BV014814663</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">021018s1968 |||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)633595605</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV014814663</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Glazov, Vasilij M.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="240" ind1="1" ind2="0"><subfield code="a">Fiziko-chimičeskie osnovy legirovanija poluprovodnikov</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Physiochemical principles of semiconductor doping</subfield><subfield code="c">V. M. Glazov and V. S. Zemskov. Transl. from Russ. by Ch. Nisenbaum ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Jerusalem</subfield><subfield code="b">Israel Program for Scientific Transl.</subfield><subfield code="c">1968</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 380 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Binäres System</subfield><subfield code="0">(DE-588)4191271-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterschicht</subfield><subfield code="0">(DE-588)4158812-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Binäres System</subfield><subfield code="0">(DE-588)4191271-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterschicht</subfield><subfield code="0">(DE-588)4158812-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zemskov, V. S.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-010024072</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV014814663 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T19:07:30Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010024072 |
| oclc_num | 633595605 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | XII, 380 S. |
| publishDate | 1968 |
| publishDateSearch | 1968 |
| publishDateSort | 1968 |
| publisher | Israel Program for Scientific Transl. |
| record_format | marc |
| spelling | Glazov, Vasilij M. Verfasser aut Fiziko-chimičeskie osnovy legirovanija poluprovodnikov Physiochemical principles of semiconductor doping V. M. Glazov and V. S. Zemskov. Transl. from Russ. by Ch. Nisenbaum ... Jerusalem Israel Program for Scientific Transl. 1968 XII, 380 S. txt rdacontent n rdamedia nc rdacarrier Silicium (DE-588)4077445-4 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf Binäres System (DE-588)4191271-8 gnd rswk-swf Halbleiterschicht (DE-588)4158812-5 gnd rswk-swf Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Binäres System (DE-588)4191271-8 s 1\p DE-604 Halbleiterschicht (DE-588)4158812-5 s 2\p DE-604 Zemskov, V. S. Verfasser aut 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Glazov, Vasilij M. Zemskov, V. S. Physiochemical principles of semiconductor doping Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Binäres System (DE-588)4191271-8 gnd Halbleiterschicht (DE-588)4158812-5 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4135644-5 (DE-588)4191271-8 (DE-588)4158812-5 |
| title | Physiochemical principles of semiconductor doping |
| title_alt | Fiziko-chimičeskie osnovy legirovanija poluprovodnikov |
| title_auth | Physiochemical principles of semiconductor doping |
| title_exact_search | Physiochemical principles of semiconductor doping |
| title_full | Physiochemical principles of semiconductor doping V. M. Glazov and V. S. Zemskov. Transl. from Russ. by Ch. Nisenbaum ... |
| title_fullStr | Physiochemical principles of semiconductor doping V. M. Glazov and V. S. Zemskov. Transl. from Russ. by Ch. Nisenbaum ... |
| title_full_unstemmed | Physiochemical principles of semiconductor doping V. M. Glazov and V. S. Zemskov. Transl. from Russ. by Ch. Nisenbaum ... |
| title_short | Physiochemical principles of semiconductor doping |
| title_sort | physiochemical principles of semiconductor doping |
| topic | Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Binäres System (DE-588)4191271-8 gnd Halbleiterschicht (DE-588)4158812-5 gnd |
| topic_facet | Silicium Germanium Binäres System Halbleiterschicht |
| work_keys_str_mv | AT glazovvasilijm fizikochimiceskieosnovylegirovanijapoluprovodnikov AT zemskovvs fizikochimiceskieosnovylegirovanijapoluprovodnikov AT glazovvasilijm physiochemicalprinciplesofsemiconductordoping AT zemskovvs physiochemicalprinciplesofsemiconductordoping |