Deep defect centers in 4H and 6H silicon carbide:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
2002
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VI, 162 S. graph. Darst. |
Internformat
MARC
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| 245 | 1 | 0 | |a Deep defect centers in 4H and 6H silicon carbide |c vorgelegt von Thomas Dalibor |
| 264 | 1 | |c 2002 | |
| 300 | |a VI, 162 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Erlangen-Nürnberg, Univ., Diss., 2002 | ||
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Datensatz im Suchindex
| _version_ | 1807500625687085056 |
|---|---|
| adam_text |
C
ONTENTS
1.
I
NTRODUCTION
1
2.
N
ONRADIATIVE
R
ECOMBINATION
P
ROCESSES
IN
S
EMICONDUCTORS
5
2.1.
CASCADE
CAPTURE
6
2.2.
MULTIPHONON
CAPTURE
10
2.3.
ELECTRIC
FIELD
DEPENDENCE
OF
EMISSION
AND
CAPTURE
PROCESSES
17
2.4.
AUGER
RECOMBINATION
20
2.5.
RECOMBINATION
VIA
ENERGETICALLY
DEEP DEFECT
CENTERS
24
3.
E
XPERIMENTAL
29
3.1.
APPLIED
MEASUREMENT
TECHNIQUES
29
3.1.1.
CAPACITANCE-VOLTAGE (C-V)
METHOD
29
3.1.2.
HALL
EFFECT
31
3.1.3.
DEEP
LEVEL
TRANSIENT
SPECTROSCOPY
(DLTS)
35
3.1.4.
DOUBLE-CORRELATED
DLTS
(DDLTS)
45
3.1.5.
ADMITTANCE
SPECTROSCOPY
(AS)
46
3.1.6.
LOW
TEMPERATURE PHOTOLUMINESCENCE
(LTPL)
47
3.2.
INVESTIGATED
SIC
SAMPLES
48
3.3.
PROCESSING
49
3.3.1.
ION
IMPLANTATION
49
3.3.2.
ANNEALING
57
3.3.3.
REACTIVE
ION
ETCHING
(RIE)
59
3.3.4.
OXIDATION
60
3.3.5.
SAMPLE
AND
CONTACT
PREPARATION
60
4.
E
NERGETICALLY
D
EEP
D
EFECT
C
ENTERS
IN
A
S
-
GROWN
CVD
E
PILAYERS
63
4.1.
DEEP
DEFECT
CENTERS
IN
AS-GROWN
4H
SIC
63
4.2.
DEEP
DEFECT
CENTERS
IN
AS-GROWN
6H
SIC
70
5.
C
ORRELATION
BETWEEN
D
J
D
EFECT
AND
Z]
C
ENTER
IN
4H
SIC
75
II
C
ONTENTS
6.
I
NTRINSIC
D
EEP
D
EFECT
C
ENTERS
83
6.1.
INTRINSIC
DEEP
DEFECT
CENTERS
IN
4H
SIC
83
6.2.
INTRINSIC
DEEP
DEFECT
CENTERS
IN
6H
SIC
94
7.
T
RANSITION
M
ETAL
R
ELATED
D
EEP
D
EFECT
C
ENTERS
105
7.1.
TITANIUM
TI
3+
ACCEPTOR
106
7.2.
VANADIUM
V
3+
ACCEPTOR
118
8.
O
XYGEN
-
RELATED
D
EFECT
C
ENTERS
IN
4H
AND
6H
SIC
125
8.1.
SHALLOW
OXYGEN-RELATED
CENTERS
-
126
8.2.
DEEP
OXYGEN-RELATED
CENTERS
136
8.3.
OXYGEN-RELATED
DEFECTS
IN
SIC
141
9.
S
UMMARY
145
10.
O
UTLOOK
149
A
PPENDIX
151
AL
.
MATERIAL
PROPERTIES
OF
SIC
AND
NATURAL
CONSTANTS
A2.
REFERENCES
A3.
PUBLICATIONS
151
153
160 |
| any_adam_object | 1 |
| author | Dalibor, Thomas 1968- |
| author_GND | (DE-588)124157521 |
| author_facet | Dalibor, Thomas 1968- |
| author_role | aut |
| author_sort | Dalibor, Thomas 1968- |
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| bvnumber | BV014784270 |
| classification_rvk | UP 2800 ZN 3460 |
| ctrlnum | (OCoLC)248797321 (DE-599)BVBBV014784270 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV014784270 |
| illustrated | Illustrated |
| indexdate | 2024-08-16T00:08:43Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010007248 |
| oclc_num | 248797321 |
| open_access_boolean | |
| owner | DE-29 DE-29T DE-355 DE-BY-UBR DE-703 DE-12 DE-83 DE-188 |
| owner_facet | DE-29 DE-29T DE-355 DE-BY-UBR DE-703 DE-12 DE-83 DE-188 |
| physical | VI, 162 S. graph. Darst. |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| record_format | marc |
| spelling | Dalibor, Thomas 1968- Verfasser (DE-588)124157521 aut Deep defect centers in 4H and 6H silicon carbide vorgelegt von Thomas Dalibor 2002 VI, 162 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Erlangen-Nürnberg, Univ., Diss., 2002 Siliciumcarbid - Polytypie - Tiefe Störstelle Tiefe Störstelle (DE-588)4185419-6 gnd rswk-swf Polytypie (DE-588)4123966-0 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Polytypie (DE-588)4123966-0 s Tiefe Störstelle (DE-588)4185419-6 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010007248&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Dalibor, Thomas 1968- Deep defect centers in 4H and 6H silicon carbide Siliciumcarbid - Polytypie - Tiefe Störstelle Tiefe Störstelle (DE-588)4185419-6 gnd Polytypie (DE-588)4123966-0 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4185419-6 (DE-588)4123966-0 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Deep defect centers in 4H and 6H silicon carbide |
| title_auth | Deep defect centers in 4H and 6H silicon carbide |
| title_exact_search | Deep defect centers in 4H and 6H silicon carbide |
| title_full | Deep defect centers in 4H and 6H silicon carbide vorgelegt von Thomas Dalibor |
| title_fullStr | Deep defect centers in 4H and 6H silicon carbide vorgelegt von Thomas Dalibor |
| title_full_unstemmed | Deep defect centers in 4H and 6H silicon carbide vorgelegt von Thomas Dalibor |
| title_short | Deep defect centers in 4H and 6H silicon carbide |
| title_sort | deep defect centers in 4h and 6h silicon carbide |
| topic | Siliciumcarbid - Polytypie - Tiefe Störstelle Tiefe Störstelle (DE-588)4185419-6 gnd Polytypie (DE-588)4123966-0 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Siliciumcarbid - Polytypie - Tiefe Störstelle Tiefe Störstelle Polytypie Siliciumcarbid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010007248&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT daliborthomas deepdefectcentersin4hand6hsiliconcarbide |