Full potential low energy electron diffraction applied to GaAs(110):
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin
dissertation.de
2002
|
| Ausgabe: | Als Ms. gedr. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Zugl.: Kiel, Univ., Diss., 1998 |
| Beschreibung: | VIII, 106 S. graph. Darst. |
| ISBN: | 3898254941 |
Internformat
MARC
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| 300 | |a VIII, 106 S. |b graph. Darst. | ||
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Datensatz im Suchindex
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|---|---|
| adam_text |
CONTENTS
ACKNOWLEDGMENTS
VII
1
INTRODUCTION
1
2
THEORY
OF
LEED
4
2.1
ONE-ELECTRON
SCHRODINGER
EQUATION
ANSATZ
.
5
2.2
MULTIPLE-SCATTERING
THEORY
FOR
LEED
.
13
2.3
SCATTERING
BETWEEN
LAYERS
.
25
2.4
SURFACE
POTENTIAL
BARRIER
.
31
2.5
EVALUATING
A
SINGLE-CELL
TRANSITION
MATRIX
.
36
2.6
PROPERTIES
OF
TRANSITION
MATRIX
AND
SCATTERING
AMPLITUDE
.
41
3
MODEL
LEED
CALCULATIONS
FOR
GAAS(LLO)
44
3.1
CRYSTAL
POTENTIAL
MODEL
.
44
3.2
TRANSITION-MATRIX
CALCULATION
.
52
3.3
LEED
INTENSITIES
.
58
3.4
TARGET-CURRENT
SPECTRA
.
68
3.5
COMPLEX
BULK
BAND
STRUCTURE
.
75
4
CONCLUSIONS
79
APPENDICES
A
MATHEMATICAL
SUPPLEMENT
83
A.L
SPECIAL
MATHEMATICAL
FUNCTIONS
USED
IN
THE
ANGULAR-MOMENTUM
REPRESENTATION
.
83
A.2
GREEN
'
S
FUNCTION
INTEGRALS
.
88
B
COMPUTATIONAL
SUPPLEMENT
93
B.L
SINGLE-CELL
TRANSITION
MATRIX
.
93
B.2
LEED
INTENSITIES
.
96
BIBLIOGRAPHY
98 |
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| id | DE-604.BV014606234 |
| illustrated | Illustrated |
| indexdate | 2024-08-23T00:31:34Z |
| institution | BVB |
| isbn | 3898254941 |
| language | English |
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| physical | VIII, 106 S. graph. Darst. |
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| spelling | Peetz, Jörg-Volker Verfasser (DE-588)120781395 aut Full potential low energy electron diffraction applied to GaAs(110) Jörg-Volker Peetz Als Ms. gedr. Berlin dissertation.de 2002 VIII, 106 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zugl.: Kiel, Univ., Diss., 1998 Kristallpotenzial (DE-588)4325751-3 gnd rswk-swf LEED (DE-588)4074082-1 gnd rswk-swf Kristallfläche (DE-588)4151344-7 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Kristallfläche (DE-588)4151344-7 s LEED (DE-588)4074082-1 s Kristallpotenzial (DE-588)4325751-3 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009929035&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Peetz, Jörg-Volker Full potential low energy electron diffraction applied to GaAs(110) Kristallpotenzial (DE-588)4325751-3 gnd LEED (DE-588)4074082-1 gnd Kristallfläche (DE-588)4151344-7 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4325751-3 (DE-588)4074082-1 (DE-588)4151344-7 (DE-588)4019155-2 (DE-588)4113937-9 |
| title | Full potential low energy electron diffraction applied to GaAs(110) |
| title_auth | Full potential low energy electron diffraction applied to GaAs(110) |
| title_exact_search | Full potential low energy electron diffraction applied to GaAs(110) |
| title_full | Full potential low energy electron diffraction applied to GaAs(110) Jörg-Volker Peetz |
| title_fullStr | Full potential low energy electron diffraction applied to GaAs(110) Jörg-Volker Peetz |
| title_full_unstemmed | Full potential low energy electron diffraction applied to GaAs(110) Jörg-Volker Peetz |
| title_short | Full potential low energy electron diffraction applied to GaAs(110) |
| title_sort | full potential low energy electron diffraction applied to gaas 110 |
| topic | Kristallpotenzial (DE-588)4325751-3 gnd LEED (DE-588)4074082-1 gnd Kristallfläche (DE-588)4151344-7 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Kristallpotenzial LEED Kristallfläche Galliumarsenid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009929035&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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