Advanced semiconductor fundamentals:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Upper Saddle River, N.J.
Prentice Hall
2003
|
| Ausgabe: | 2. ed. |
| Schriftenreihe: | Modular series on solid state devices
6 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | X, 221 S. Ill., graph. Darst. |
| ISBN: | 013061792X 9780130617927 |
Internformat
MARC
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Datensatz im Suchindex
| _version_ | 1804129304183832576 |
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| adam_text | MODULAR SERIES ON SOLID STATE DEVICES ROBERT F. PIERRET AND GEROLD W.
NEUDECK, EDITORS VOLUME VI ADVANCED SEMICONDUCTOR FUNDAMENTALS SECOND
EDITION ROBERT R PIERRET PURDUE UNIVERSITY PRENTICE HALL HLUHB DARMSTADT
ILLLLLLLLLLLLLLLLLLLLLLL 15515970 PEARSON EDUCATION, INC. UPPER SADDLE
RIVER, NEW JERSEY 07458 CONTENTS CHAPTER 1 BASIC SEMICONDUCTOR
PROPERTIES 1 1.1 GENERAL MATERIAL PROPERTIES 1 1.2 CRYSTAL STRUCTURE 5
1.2.1 THE UNIT CELL CONCEPT 5 1.2.2 SIMPLE 3-D UNIT CELLS 7 1.2.3
BRAVAIS LATTICES AND CRYSTAL SYSTEMS 8 1.2.4 SPECIFIC SEMICONDUCTOR
LATTICES 11 1.2.5 MILLER INDICES 13 1.2.6 EXAMPLE USE OF MILLER INDICES
16 WAFER SURFACE ORIENTATION 16 WAFER FLATS AND NOTCHES 17 PATTERN
ALIGNMENT 18 REFERENCES 19 SOURCE LISTING 19 PROBLEMS 19 CHAPTER 2
ELEMENTS OF QUANTUM MECHANICS 23 2.1 THE QUANTUM CONCEPT 23 2.1.1
BLACKBODY RADIATION 23 2.1.2 THE BOHR ATOM 25 2.1.3 WAVE-PARTICLE
DUALITY 28 2.2 BASIC FORMALISM 29 2.2.1 GENERAL FORMULATION 29 2.2.2
TIME-INDEPENDENT FORMULATION 31 2.3 SIMPLE PROBLEM SOLUTIONS 32 2.3.1
THE FREE PARTICLE 33 2.3.2 PARTICLE IN A 1-D BOX 35 2.3.3 FINITE
POTENTIAL WELL 40 REFERENCES 46 SOURCE LISTING 46 PROBLEMS 46 VII VIIJJ
CONTENTS CHAPTER 3 ENERGY BAND THEORY 51 3.1 PRELIMINARY CONSIDERATIONS
52 3.1.1 SIMPLIFYING ASSUMPTIONS 52 3.1.2 THE BLOCH THEOREM 52 3.2
APPROXIMATE ONE-DIMENSIONAL ANALYSIS 55 3.2.1 KRONIG-PENNEY MODEL 55
3.2.2 MATHEMATICAL SOLUTION 55 3.2.3 ENERGY BANDS AND BRILLOUIN ZONES 58
3.2.4 PARTICLE MOTION AND EFFECTIVE MASS 62 3.2.5 CARRIERS AND CURRENT
67 3.3 EXTRAPOLATION OF CONCEPTS TO THREE DIMENSIONS 70 3.3.1 BRILLOUIN
ZONES 70 3.3.2 E-K DIAGRAMS 71 3.3.3 CONSTANT-ENERGY SURFACES 74 3.3.4
EFFECTIVE MASS 77 GENERAL CONSIDERATIONS 77 GE, SI, AND GAAS 78
MEASUREMENT 80 3.3.5 BAND GAP ENERGY 81 REFERENCES 83 PROBLEMS 83
CHAPTER 4 EQUILIBRIUM CARRIER STATISTICS 87 4.1 DENSITY OF STATES 88
4.1.1 GENERAL DERIVATION 89 4.1.2 SPECIFIC MATERIALS 93 CONDUCTION
BAND*GAAS 94 CONDUCTION BAND*SI, GE 94 VALENCE BAND*GE, SI, GAAS 95 4.2
FERMI FUNCTION 96 INTRODUCTION 96 PROBLEM SPECIFICATION 97 DERIVATION
PROPER 98 CONCLUDING DISCUSSION 100 4.3 SUPPLEMENTAL INFORMATION 101
4.3.1 EQUILIBRIUM DISTRIBUTION OF CARRIERS 101 4.3.2 THE ENERGY BAND
DIAGRAM 102 4.3.3 DONORS, ACCEPTORS, BAND GAP CENTERS 107 4.4
EQUILIBRIUM CONCENTRATION RELATIONSHIPS 111 4.4.1 FORMULAS FOR N AND P
112 4.4.2 N X AND THE NP PRODUCT 116 4.4.3 CHARGE NEUTRALITY
RELATIONSHIP 116 4.4.4 RELATIONSHIPS FOR N^ AND N& 118 CONTENTS IX 4.5
CONCENTRATION AND E F CALCULATIONS 120 4.5.1 GENERAL INFORMATION 120
4.5.2 EQUILIBRIUM CARRIER CONCENTRATIONS 122 FREEZE-OUT/EXTRINSIC T 122
EXTRINSIC/INTRINSIC T 123 4.5.3 DETERMINATION OF E F 125 EXACT POSITION
OF E { 125 FREEZE-OUT/EXTRINSIC T 126 EXTRINSIC/INTRINSIC T 126 4.5.4
DEGENERATE SEMICONDUCTOR CONSIDERATIONS 127 REFERENCES 128 PROBLEMS 128
CHAPTER 5 RECOMBINATION-GENERATION PROCESSES 134 5.1 INTRODUCTION 134
5.1.1 SURVEY OF R-G PROCESSES 134 RECOMBINATION PROCESSES 136 GENERATION
PROCESSES 137 5.1.2 MOMENTUM CONSIDERATIONS 137 5.2
RECOMBINATION-GENERATION STATISTICS 140 5.2.1 DEFINITION OF TERMS 140
5.2.2 GENERALIZED RATE RELATIONSHIPS 141 5.2.3 THE EQUILIBRIUM
SIMPLIFICATION 144 5.2.4 STEADY-STATE RELATIONSHIP 147 5.2.5 SPECIALIZED
STEADY-STATE RELATIONSHIPS 149 LOW LEVEL INJECTION 149 R-G DEPLETION
REGION 151 5.2.6 PHYSICAL VIEW OF CARRIER CAPTURE 152 5.3 SURFACE
RECOMBINATION-GENERATION 154 5.3.1 INTRODUCTORY COMMENTS 154 5.3.2
GENERAL RATE RELATIONSHIPS (SINGLE LEVEL) 156 5.3.3 STEADY-STATE
RELATIONSHIPS 157 SINGLE LEVEL 157 MULTI-LEVEL 158 5.3.4 SPECIALIZED
STEADY-STATE RELATIONSHIPS 159 LOW LEVEL INJECTION/FLAT BAND 159
DEPLETED SURFACE 161 5.4 SUPPLEMENTAL R-G INFORMATION 162 MULTISTEP
NATURE OF CARRIER CAPTURE 162 MANIPULATION OF N T 163 SELECTED BULK
PARAMETRIC DATA 163 DOPING DEPENDENCE 165 SELECTED SURFACE PARAMETRIC
DATA (SI/SIO 2 ) 165 REFERENCES 169 X CONTENTS SOURCE LISTING 170
PROBLEMS 170 CHAPTER 6 CARRIER TRANSPORT 175 6.1 DRIFT 175 6.1.1
DEFINITION-VISUALIZATION 175 6.1.2 DRIFT CURRENT 176 6.1.3 MOBILITY 178
BASIC INFORMATION 178 THEORETICAL CONSIDERATIONS 179 DOPING/TEMPERATURE
DEPENDENCE 182 6.1.4 HIGH-FIELD/NARROW-DIMENSION EFFECTS 183 VELOCITY
SATURATION 18 3 INTERVALLEY CARRIER TRANSFER 188 BALLISTIC
TRANSPORT/VELOCITY OVERSHOOT 189 6.1.5 RELATED TOPICS 190 RESISTIVITY
190 HALL EFFECT 192 6.2 DIFFUSION 196 6.2.1 DEFINITION-VISUALIZATION 196
6.2.2 DIFFUSION CURRENT 197 6.2.3 EINSTEIN RELATIONSHIP 200 6.3
EQUATIONS OF STATE 202 6.3.1 CURRENT EQUATIONS 202 CARRIER CURRENTS 202
DIELECTRIC DISPLACEMENT CURRENT 203 QUASI-FERMI LEVELS 203 6.3.2
CONTINUITY EQUATIONS 205 6.3.3 MINORITY CARRIER DIFFUSION EQUATIONS 206
6.3.4 EQUATIONS SUMMARY 208 REFERENCES 209 PROBLEMS 210 INDEX 216
|
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 2. ed. |
| format | Book |
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| spelling | Pierret, Robert F. Verfasser aut Advanced semiconductor fundamentals Robert F. Pierret 2. ed. Upper Saddle River, N.J. Prentice Hall 2003 X, 221 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Modular series on solid state devices 6 Semiconducteur rasuqam Semiconducteurs ram Semiconductors Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)4123623-3 Lehrbuch gnd-content Halbleiterphysik (DE-588)4113829-6 s DE-604 Halbleiter (DE-588)4022993-2 s 1\p DE-604 Modular series on solid state devices 6 (DE-604)BV001896679 6 HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009878970&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Pierret, Robert F. Advanced semiconductor fundamentals Modular series on solid state devices Semiconducteur rasuqam Semiconducteurs ram Semiconductors Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4022993-2 (DE-588)4123623-3 |
| title | Advanced semiconductor fundamentals |
| title_auth | Advanced semiconductor fundamentals |
| title_exact_search | Advanced semiconductor fundamentals |
| title_full | Advanced semiconductor fundamentals Robert F. Pierret |
| title_fullStr | Advanced semiconductor fundamentals Robert F. Pierret |
| title_full_unstemmed | Advanced semiconductor fundamentals Robert F. Pierret |
| title_short | Advanced semiconductor fundamentals |
| title_sort | advanced semiconductor fundamentals |
| topic | Semiconducteur rasuqam Semiconducteurs ram Semiconductors Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd |
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