Jones, E. C. (2001). Si front end processing - physics and technology of dopant defect interactions III: Symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. Materials Research Soc.
Chicago-Zitierstil (17. Ausg.)Jones, Erin C. Si Front End Processing - Physics and Technology of Dopant Defect Interactions III: Symposium Held April 17 - 19, 2001, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Soc, 2001.
MLA-Zitierstil (9. Ausg.)Jones, Erin C. Si Front End Processing - Physics and Technology of Dopant Defect Interactions III: Symposium Held April 17 - 19, 2001, San Francisco, California, U.S.A. Materials Research Soc, 2001.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.