Si front end processing - physics and technology of dopant defect interactions III: symposium held April 17 - 19, 2001, San Francisco, California, U.S.A.
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Warrendale, Pa.
Materials Research Soc.
2001
|
| Schriftenreihe: | Materials Research Society symposia proceedings
669 |
| Schlagworte: | |
| Beschreibung: | Getr. Zählung Ill., graph. Darst. |
| ISBN: | 1558996052 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV014279100 | ||
| 003 | DE-604 | ||
| 005 | 20200309 | ||
| 007 | t | ||
| 008 | 020502s2001 ad|| |||| 10||| eng d | ||
| 020 | |a 1558996052 |9 1-55899-605-2 | ||
| 035 | |a (OCoLC)48997485 | ||
| 035 | |a (DE-599)BVBBV014279100 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29T |a DE-706 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.3815/2 |2 21 | |
| 245 | 1 | 0 | |a Si front end processing - physics and technology of dopant defect interactions III |b symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. |c ed.: Erin C. Jones ... |
| 246 | 1 | 3 | |a Si front-end processing - physics and technology of dopant-defect interactions III |
| 264 | 1 | |a Warrendale, Pa. |b Materials Research Soc. |c 2001 | |
| 300 | |a Getr. Zählung |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials Research Society symposia proceedings |v 669 | |
| 650 | 4 | |a Semiconductor doping |v Congresses | |
| 650 | 4 | |a Semiconductors |x Defects |v Congresses | |
| 650 | 4 | |a Semiconductors |x Design and construction |v Congresses | |
| 650 | 4 | |a Silicon |v Congresses | |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Störstelle |0 (DE-588)4193400-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 2001 |z San Francisco Calif. |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a Störstelle |0 (DE-588)4193400-3 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Jones, Erin C. |4 edt | |
| 830 | 0 | |a Materials Research Society symposia proceedings |v 669 |w (DE-604)BV001899105 |9 669 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-009792403 | ||
Datensatz im Suchindex
| _version_ | 1804129169998610432 |
|---|---|
| any_adam_object | |
| author2 | Jones, Erin C. |
| author2_role | edt |
| author2_variant | e c j ec ecj |
| author_facet | Jones, Erin C. |
| building | Verbundindex |
| bvnumber | BV014279100 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)48997485 (DE-599)BVBBV014279100 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01845nam a2200457 cb4500</leader><controlfield tag="001">BV014279100</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20200309 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">020502s2001 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1558996052</subfield><subfield code="9">1-55899-605-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)48997485</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV014279100</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">21</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Si front end processing - physics and technology of dopant defect interactions III</subfield><subfield code="b">symposium held April 17 - 19, 2001, San Francisco, California, U.S.A.</subfield><subfield code="c">ed.: Erin C. Jones ...</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Si front-end processing - physics and technology of dopant-defect interactions III</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Warrendale, Pa.</subfield><subfield code="b">Materials Research Soc.</subfield><subfield code="c">2001</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Getr. Zählung</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Materials Research Society symposia proceedings</subfield><subfield code="v">669</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor doping</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Defects</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Design and construction</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">2001</subfield><subfield code="z">San Francisco Calif.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jones, Erin C.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Materials Research Society symposia proceedings</subfield><subfield code="v">669</subfield><subfield code="w">(DE-604)BV001899105</subfield><subfield code="9">669</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-009792403</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 2001 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 2001 San Francisco Calif. |
| id | DE-604.BV014279100 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T19:00:52Z |
| institution | BVB |
| isbn | 1558996052 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009792403 |
| oclc_num | 48997485 |
| open_access_boolean | |
| owner | DE-29T DE-706 |
| owner_facet | DE-29T DE-706 |
| physical | Getr. Zählung Ill., graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society symposia proceedings |
| series2 | Materials Research Society symposia proceedings |
| spelling | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. ed.: Erin C. Jones ... Si front-end processing - physics and technology of dopant-defect interactions III Warrendale, Pa. Materials Research Soc. 2001 Getr. Zählung Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society symposia proceedings 669 Semiconductor doping Congresses Semiconductors Defects Congresses Semiconductors Design and construction Congresses Silicon Congresses Silicium (DE-588)4077445-4 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2001 San Francisco Calif. gnd-content Halbleitertechnologie (DE-588)4158814-9 s Silicium (DE-588)4077445-4 s Störstelle (DE-588)4193400-3 s DE-604 Jones, Erin C. edt Materials Research Society symposia proceedings 669 (DE-604)BV001899105 669 |
| spellingShingle | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. Materials Research Society symposia proceedings Semiconductor doping Congresses Semiconductors Defects Congresses Semiconductors Design and construction Congresses Silicon Congresses Silicium (DE-588)4077445-4 gnd Störstelle (DE-588)4193400-3 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4193400-3 (DE-588)4158814-9 (DE-588)1071861417 |
| title | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. |
| title_alt | Si front-end processing - physics and technology of dopant-defect interactions III |
| title_auth | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. |
| title_exact_search | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. |
| title_full | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. ed.: Erin C. Jones ... |
| title_fullStr | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. ed.: Erin C. Jones ... |
| title_full_unstemmed | Si front end processing - physics and technology of dopant defect interactions III symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. ed.: Erin C. Jones ... |
| title_short | Si front end processing - physics and technology of dopant defect interactions III |
| title_sort | si front end processing physics and technology of dopant defect interactions iii symposium held april 17 19 2001 san francisco california u s a |
| title_sub | symposium held April 17 - 19, 2001, San Francisco, California, U.S.A. |
| topic | Semiconductor doping Congresses Semiconductors Defects Congresses Semiconductors Design and construction Congresses Silicon Congresses Silicium (DE-588)4077445-4 gnd Störstelle (DE-588)4193400-3 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Semiconductor doping Congresses Semiconductors Defects Congresses Semiconductors Design and construction Congresses Silicon Congresses Silicium Störstelle Halbleitertechnologie Konferenzschrift 2001 San Francisco Calif. |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT joneserinc sifrontendprocessingphysicsandtechnologyofdopantdefectinteractionsiiisymposiumheldapril17192001sanfranciscocaliforniausa AT joneserinc sifrontendprocessingphysicsandtechnologyofdopantdefectinteractionsiii |