Device grade SiGe heterostructures grown by plasma assisted techniques:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2002
|
| Schriftenreihe: | Berichte aus der Halbleitertechnik
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 2001 |
| Beschreibung: | VIII, 111 S. Ill., graph. Darst. : 21 cm |
| ISBN: | 383220024X |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
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| 100 | 1 | |a Kummer, Matthias |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Device grade SiGe heterostructures grown by plasma assisted techniques |c Matthias Kummer |
| 264 | 1 | |a Aachen |b Shaker |c 2002 | |
| 300 | |a VIII, 111 S. |b Ill., graph. Darst. : 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Berichte aus der Halbleitertechnik | |
| 500 | |a Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 2001 | ||
| 650 | 4 | |a Germanium | |
| 650 | 4 | |a Plasma-enhanced chemical vapor deposition | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Silicon | |
| 650 | 4 | |a Thin films | |
| 650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Magnetronsputtern |0 (DE-588)4208514-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a PECVD-Verfahren |0 (DE-588)4267316-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a HEMT |0 (DE-588)4211873-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Molekularstrahlepitaxie |0 (DE-588)4170399-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a HEMT |0 (DE-588)4211873-6 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a Germanium |0 (DE-588)4135644-5 |D s |
| 689 | 0 | 3 | |a Magnetronsputtern |0 (DE-588)4208514-7 |D s |
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| 689 | 0 | 5 | |a PECVD-Verfahren |0 (DE-588)4267316-1 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 1 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 1 | 2 | |a Germanium |0 (DE-588)4135644-5 |D s |
| 689 | 1 | 3 | |a Magnetronsputtern |0 (DE-588)4208514-7 |D s |
| 689 | 1 | 4 | |a Molekularstrahlepitaxie |0 (DE-588)4170399-6 |D s |
| 689 | 1 | 5 | |a PECVD-Verfahren |0 (DE-588)4267316-1 |D s |
| 689 | 1 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009751472&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-009751472 | |
Datensatz im Suchindex
| _version_ | 1808045740912541696 |
|---|---|
| adam_text |
CONTENTS
ABSTRACT
V
KURZFASSUNG
VII
1
INTRODUCTION
1
1.1
SIGE
TECHNOLOGY
.
1
1.2
PHYSICS
OF
SIGE
DEVICES
.
2
1.2.1
ELECTRONIC
PROPERTIES
.
2
1.2.2
STRUCTURAL
ISSUES
.
5
1.3
VIRTUAL
SIGE
SUBSTRATES
.
6
1.4
ESTABLISHED
EPITAXY
PROCESSES
FOR
SIGE
.
8
2
LOW
ENERGY
PLASMA
ENHANCED
CHEMICAL
VAPOR
DEPOSITION
(LEPECVD)
9
2.1
THE
PROCESS
AND
THE
EXPERIMENTAL
SYSTEM
.
9
2.2
IMPROVEMENTS
TO
THE
PROCESS
.
11
2.2.1
ENHANCED
REPRODUCIBILITY
.
11
2.2.2
LONG-TERM
STABILITY
OF
THE
PROCESS
CONDITIONS
.
14
2.2.3
INFLUENCE
OF
THE
SUBSTRATE
POTENTIAL
.
15
2.2.4
PROCESS
HOMOGENEITY
.
16
2.2.5
DEMONSTRATION
OF
ULTRATHICK
EPITAXIAL
FILMS
.
17
2.3
SI
HOMOEPITAXY
.
19
2.3.1
IDENTIFICATION
OF
GROWTH
DEFECTS
.
20
2.3.2
SELF-ORGANIZED
SI
STRUCTURES
.
21
2.4
MICROCRYSTALLINE
SILICON
.
23
2.4.1
SAMPLE
PREPARATION
.
25
II
CONTENTS
2.4.2
RESULTS
.
25
3
SIGE
DEVICE
APPLICATIONS
29
3.1
VIRTUAL
SIGE
SUBSTRATES
.
29
3.1.1
SURFACE
MORPHOLOGY
.
30
3.1.2
STRUCTURAL
ASSESSMENT
.
31
3.1.3
THREADING
DISLOCATIONS
.
38
3.1.4
THERMAL
STRESS
.
39
3.2
STRAINED
SIGE
HETEROSTRUCTURES
.
41
3.3
ELECTRONIC
DEVICES
.
42
3.3.1
N-TYPE
MODULATION
DOPED
QUANTUM
WELL
(N-MODQW)
.
42
3.3.2
N-TYPE
MODULATION
DOPED
FIELD
EFFECT
TRANSISTOR
(N
MODFET)
.
46
3.3.3
P-TYPE
METAL
OXIDE
FIELD
EFFECT
TRANSISTOR
(P-MOSFET)
51
3.3.4
CONCLUSIONS
.
60
4
MAGNETRON
SPUTTER
EPITAXY
(MSE)
61
4.1
DESCRIPTION
OF
THE
PROCESS
AND
THE
SYSTEM
.
61
4.2
SELF-ASSEMBLED
GE
CLUSTERS
.
62
4.2.1
SEMICONDUCTOR
NANOSTRUCTURES
.
62
4.2.2
SAMPLE
PREPARATION
.
63
4.2.3
EVOLUTION
OF
THE
SURFACE
MORPHOLOGY
.
63
4.2.4
CONCLUSIONS
.
67
4.3
NOVEL
STEP
STRUCTURES
IN
THE
SI(001)
SYSTEM
.
68
4.3.1
STEP
STRUCTURE
OF
SI(001)
.
68
4.3.2
MODIFICATIONS
INDUCED
BY
GE
.
68
4.3.3
EXPERIMENTAL
.
69
4.3.4
STEP
STRUCTURE
OF
SIGE
VS
'
S
.
69
4.3.5
CONCLUSIONS
.
74
4.4
X-RAY
INVESTIGATIONS
OF
DEFECTIVE
MSE
FILMS
.
77
4.4.1
MEASUREMENT
SET-UPS
.
78
4.4.2
RESULTS
AND
DISCUSSION
.
79
CONCLUSIONS
AND
OUTLOOK
86
A
RELAXATION
OF
VIRTUAL
SIGE
SUBSTRATES
87
CONTENTS
III
B
HIGH-RESOLUTION
X-RAY
DIFFRACTION
91
LIST
OF
PUBLICATIONS
AND
PRESENTATIONS
97
BIBLIOGRAPHY
100
ACKNOWLEDGMENT
109
CURRICULUM
VITAE
111 |
| any_adam_object | 1 |
| author | Kummer, Matthias |
| author_facet | Kummer, Matthias |
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| callnumber-subject | TK - Electrical and Nuclear Engineering |
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| id | DE-604.BV014221649 |
| illustrated | Illustrated |
| indexdate | 2024-08-22T00:33:04Z |
| institution | BVB |
| isbn | 383220024X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009751472 |
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| owner_facet | DE-703 |
| physical | VIII, 111 S. Ill., graph. Darst. : 21 cm |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| publisher | Shaker |
| record_format | marc |
| series2 | Berichte aus der Halbleitertechnik |
| spelling | Kummer, Matthias Verfasser aut Device grade SiGe heterostructures grown by plasma assisted techniques Matthias Kummer Aachen Shaker 2002 VIII, 111 S. Ill., graph. Darst. : 21 cm txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 2001 Germanium Plasma-enhanced chemical vapor deposition Semiconductors Silicon Thin films Germanium (DE-588)4135644-5 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Magnetronsputtern (DE-588)4208514-7 gnd rswk-swf PECVD-Verfahren (DE-588)4267316-1 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Magnetronsputtern (DE-588)4208514-7 s Molekularstrahlepitaxie (DE-588)4170399-6 s PECVD-Verfahren (DE-588)4267316-1 s DE-604 MOS-FET (DE-588)4207266-9 s DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009751472&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Kummer, Matthias Device grade SiGe heterostructures grown by plasma assisted techniques Germanium Plasma-enhanced chemical vapor deposition Semiconductors Silicon Thin films Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd Magnetronsputtern (DE-588)4208514-7 gnd PECVD-Verfahren (DE-588)4267316-1 gnd HEMT (DE-588)4211873-6 gnd MOS-FET (DE-588)4207266-9 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4135644-5 (DE-588)4077445-4 (DE-588)4208514-7 (DE-588)4267316-1 (DE-588)4211873-6 (DE-588)4207266-9 (DE-588)4170399-6 (DE-588)4113937-9 |
| title | Device grade SiGe heterostructures grown by plasma assisted techniques |
| title_auth | Device grade SiGe heterostructures grown by plasma assisted techniques |
| title_exact_search | Device grade SiGe heterostructures grown by plasma assisted techniques |
| title_full | Device grade SiGe heterostructures grown by plasma assisted techniques Matthias Kummer |
| title_fullStr | Device grade SiGe heterostructures grown by plasma assisted techniques Matthias Kummer |
| title_full_unstemmed | Device grade SiGe heterostructures grown by plasma assisted techniques Matthias Kummer |
| title_short | Device grade SiGe heterostructures grown by plasma assisted techniques |
| title_sort | device grade sige heterostructures grown by plasma assisted techniques |
| topic | Germanium Plasma-enhanced chemical vapor deposition Semiconductors Silicon Thin films Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd Magnetronsputtern (DE-588)4208514-7 gnd PECVD-Verfahren (DE-588)4267316-1 gnd HEMT (DE-588)4211873-6 gnd MOS-FET (DE-588)4207266-9 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Germanium Plasma-enhanced chemical vapor deposition Semiconductors Silicon Thin films Silicium Magnetronsputtern PECVD-Verfahren HEMT MOS-FET Molekularstrahlepitaxie Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009751472&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT kummermatthias devicegradesigeheterostructuresgrownbyplasmaassistedtechniques |