Low voltage SOI CMOS VLSI devices and circuits:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York
Wiley
2001
|
| Schriftenreihe: | A Wiley-Interscience publication
|
| Schlagworte: | |
| Beschreibung: | XIV, 407 S. graph. Darst. |
| ISBN: | 0471417777 |
Internformat
MARC
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| 001 | BV014194846 | ||
| 003 | DE-604 | ||
| 005 | 20021018 | ||
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| 035 | |a (DE-599)BVBBV014194846 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
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| 050 | 0 | |a TK7874.66 | |
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| 100 | 1 | |a Kuo, James B. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Low voltage SOI CMOS VLSI devices and circuits |c James B. Kuo ; Shih-Chia Lin |
| 264 | 1 | |a New York |b Wiley |c 2001 | |
| 300 | |a XIV, 407 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a A Wiley-Interscience publication | |
| 650 | 4 | |a Circuits intégrés à faible consommation | |
| 650 | 4 | |a Circuits intégrés à très grande échelle | |
| 650 | 4 | |a MOS complémentaires | |
| 650 | 4 | |a Integrated circuits |x Very large scale integration | |
| 650 | 4 | |a Low voltage integrated circuits | |
| 650 | 4 | |a Metal oxide semiconductors, Complementary | |
| 650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |D s |
| 689 | 0 | 1 | |a VLSI |0 (DE-588)4117388-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Lin, Shih-Chia |e Verfasser |4 aut | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-009729820 | ||
Datensatz im Suchindex
| _version_ | 1804129074046566400 |
|---|---|
| any_adam_object | |
| author | Kuo, James B. Lin, Shih-Chia |
| author_facet | Kuo, James B. Lin, Shih-Chia |
| author_role | aut aut |
| author_sort | Kuo, James B. |
| author_variant | j b k jb jbk s c l scl |
| building | Verbundindex |
| bvnumber | BV014194846 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874.66 |
| callnumber-search | TK7874.66 |
| callnumber-sort | TK 47874.66 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4960 |
| ctrlnum | (OCoLC)47183694 (DE-599)BVBBV014194846 |
| dewey-full | 621.39/5 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.39/5 |
| dewey-search | 621.39/5 |
| dewey-sort | 3621.39 15 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV014194846 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:59:21Z |
| institution | BVB |
| isbn | 0471417777 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009729820 |
| oclc_num | 47183694 |
| open_access_boolean | |
| owner | DE-703 DE-83 |
| owner_facet | DE-703 DE-83 |
| physical | XIV, 407 S. graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Wiley |
| record_format | marc |
| series2 | A Wiley-Interscience publication |
| spelling | Kuo, James B. Verfasser aut Low voltage SOI CMOS VLSI devices and circuits James B. Kuo ; Shih-Chia Lin New York Wiley 2001 XIV, 407 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier A Wiley-Interscience publication Circuits intégrés à faible consommation Circuits intégrés à très grande échelle MOS complémentaires Integrated circuits Very large scale integration Low voltage integrated circuits Metal oxide semiconductors, Complementary VLSI (DE-588)4117388-0 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 s VLSI (DE-588)4117388-0 s DE-604 Lin, Shih-Chia Verfasser aut |
| spellingShingle | Kuo, James B. Lin, Shih-Chia Low voltage SOI CMOS VLSI devices and circuits Circuits intégrés à faible consommation Circuits intégrés à très grande échelle MOS complémentaires Integrated circuits Very large scale integration Low voltage integrated circuits Metal oxide semiconductors, Complementary VLSI (DE-588)4117388-0 gnd CMOS-Schaltung (DE-588)4148111-2 gnd |
| subject_GND | (DE-588)4117388-0 (DE-588)4148111-2 |
| title | Low voltage SOI CMOS VLSI devices and circuits |
| title_auth | Low voltage SOI CMOS VLSI devices and circuits |
| title_exact_search | Low voltage SOI CMOS VLSI devices and circuits |
| title_full | Low voltage SOI CMOS VLSI devices and circuits James B. Kuo ; Shih-Chia Lin |
| title_fullStr | Low voltage SOI CMOS VLSI devices and circuits James B. Kuo ; Shih-Chia Lin |
| title_full_unstemmed | Low voltage SOI CMOS VLSI devices and circuits James B. Kuo ; Shih-Chia Lin |
| title_short | Low voltage SOI CMOS VLSI devices and circuits |
| title_sort | low voltage soi cmos vlsi devices and circuits |
| topic | Circuits intégrés à faible consommation Circuits intégrés à très grande échelle MOS complémentaires Integrated circuits Very large scale integration Low voltage integrated circuits Metal oxide semiconductors, Complementary VLSI (DE-588)4117388-0 gnd CMOS-Schaltung (DE-588)4148111-2 gnd |
| topic_facet | Circuits intégrés à faible consommation Circuits intégrés à très grande échelle MOS complémentaires Integrated circuits Very large scale integration Low voltage integrated circuits Metal oxide semiconductors, Complementary VLSI CMOS-Schaltung |
| work_keys_str_mv | AT kuojamesb lowvoltagesoicmosvlsidevicesandcircuits AT linshihchia lowvoltagesoicmosvlsidevicesandcircuits |