GaN and related alloys - 2000: symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A.
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Warrendale, Pa.
Materials Research Soc.
2001
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| Schriftenreihe: | Materials Research Society symposia proceedings
639 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Getr. Zählung Ill., graph. Darst. |
| ISBN: | 1558995498 |
Internformat
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| 245 | 1 | 0 | |a GaN and related alloys - 2000 |b symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. |c ed.: Christian Wetzel ... |
| 264 | 1 | |a Warrendale, Pa. |b Materials Research Soc. |c 2001 | |
| 300 | |a Getr. Zählung |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials Research Society symposia proceedings |v 639 | |
| 650 | 4 | |a Gallium nitride |v Congresses | |
| 650 | 4 | |a Nitrides |v Congresses | |
| 650 | 4 | |a Optoelectronic devices |v Congresses | |
| 650 | 4 | |a Wide gap semiconductors |v Congresses | |
| 650 | 4 | |a Wide gap semiconductors |x Materials |v Congresses | |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 2000 |z Boston Mass. |2 gnd-content | |
| 689 | 0 | 0 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 0 | |5 DE-604 | |
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Datensatz im Suchindex
| _version_ | 1804128995216719872 |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 639 GAN AND
RELATED ALLOYS*2000 SYMPOSIUM HELD NOVEMBER 27-DECEMBER 1, 2000, BOSTON,
MASSACHUSETTS, U.S.A. EDITORS: CHRISTIAN WETZEL UNIROYAL OPTOELECTRONICS
TAMPA, FLORIDA, U.S.A. MICHAEL S. SHUR RENSSELAER POLYTECHNIC INSTITUTE
TROY, NEW YORK, U.S.A. UMESH K. MISHRA UNIVERSITY OF CALIFORNIA-SANTA
BARBARA SANTA BARBARA, CALIFORNIA, U.S.A. BERNARD GIL UNIVERSITE DE
MONTPELLIER II MONTPELLIER, FRANCE KATSUMI KISHINO SOPHIA UNIVERSITY
TOKYO, JAPAN MIRISI MATERIALS RESEARCH SOCIETY WARRENDALE, PENNSYLVANIA
CONTENTS DEDICATION XXIII PREFACE XXV ACKNOWLEDGMENTS XXVII MATERIALS
RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XXVIII ADVANCES IN GROWTH * THE
CHEMISTRY OF GAN GROWTH GL.L T.F. KUECH, SHULIN GU, RAMCHANDRA WATE,
LING ZHANG, JINGXI SUN, J. A. DUMESIC, AND J.M. REDWING DRASTIC
REDUCTION OF THREADING DISLOCATION DENSITY OF ALGAN ON SIC WAFER BY
USING HIGHLY-SI-INCORPORATED ALGAN SUPERLATTICE G1.3 HIDEKI HIRAYAMA,
MAKOTO AINOYA, ATSUHIRO KINOSHITA, AKIRA HIRATA, AND YOSHINOBU AOYAGI
GROWTH OF SELF-SEEDED ALUMINUM NITRIDE BY SUBLIMATION- RECONDENSATION
AND SUBSTRATE PREPARATION GL.10 J. CARLOS ROJO, GLEN A. SLACK, KENNETH
MORGAN, LEO J. SCHOWALTER, AND MICHAEL DUDLEY ADVANCED ALLOYS AND
CHARACTERIZATION NITRIDE-RICH HEXAGONAL GANP GROWTH USING METALORGANIC
CHEMICAL VAPOR DEPOSITION G2.2 SEIKOH YOSHIDA, YOSHITERU ITOH, AND
JUNJIROH KIKAWA COMPREHENSIVE STUDY OF ANOMALOUS CONDUCTION BAND
STRUCTURE OFLNJGA^ASLYNY G2.5 C. SKIERBISZEWSKI, P. PERLIN, P.
WISNIEWSKI, A. PRESZ, T. SUSKI, J. GEISZ, W. JANTSCH, AND D. MARS INDIUM
INCORPORATION AND SURFACE SEGREGATION DURING INGAN GROWTH BY MOLECULAR
BEAM EPITAXY G2.6 HUAJIE CHEN, R.M. FEENSTRA, J.E. NORTHRUP, J.
NEUGEBAUER, AND D.W. GREVE *INVITED PAPER V IN SEGREGATION EFFECTS ON
OPTICAL AND DOPING PROPERTIES OF INALGAN QUATERNARY FOR UV EMITTING
DEVICES G2.8 HIDEKI HIRAYAMA, ATSUHIRO KINOSHITA, TAKUYA YAMANAKA, AKIRA
HIRATA, AND YOSHINOBU AOYAGI GROWTH AND CHARACTERIZATION LOCALIZED
VIBRATIONAL MODES OF CARBON-HYDROGEN COMPLEXES IN MOCVD GROWN GAN AND
ALGAN THIN FILMS G3.1 J. CHEN, Q. ZHOU, Y. BERHANE, M.O. MANASREH, CA.
TRAN, M. POPHRISTIC, AND LT. FERGUSON A NEW MECHANISM IN THE GROWTH
PROCESS OF GAN BY HVPE G3.2 A. TRASSOUDAINE, E. AUJOL, R. CADORET, T.
PASKOVA, AND B. MONEMAR A COMPARISON OF MAGNESIUM AND BERYLLIUM
ACCEPTORS IN GAN GROWN BY RF-PLASMA ASSISTED MOLECULAR BEAM EPITAXY G3.3
A.J. PTAK, *.*. MYERS, LIJUN WANG, N.C. GILES, M. MOLDOVAN, CR. DA
CUNHA, L.A. HORNAK, * TIAN, R.A. HOCKETT, S. MITHA, AND P. VAN LIERDE
OPTICAL STUDY OF GAN DOPED WITH MN GROWN BY METAL ORGANIC VAPOR PHASE
EPITAXY G3.7 R.Y. KOROTKOV, J.M. GREGIE, AND B.W. WESSELS OPTIMIZATION
OF THE GAN EPILAYER QUALITY USING IN-SITU REFLECTANCE MEASUREMENTS G3.8
SANDRA RUFFENACH-CLUR, MATTHIEU MORET, OLIVIER BRIOT, NATHANAEL MOREAUD,
JOSEPH CALAS, AND ROGER L. AULOMBARD MICROSTRUCTURE OF GAN GROWN ON (112
0) SAPPHIRE G3.9 P. RUTERANA, A.E. WICKENDEN, M.E. TWIGG, D.D. KOLESKE,
R.L. HENRY, AND O. TOTTEREAU CHEMICAL ORDERING IN ALGAN LAYERS GROWN BY
MOCVD G3.10 P. RUTERANA AND F. OMNES SURFACE MORPHOLOGY AND COMPOSITION
CHARACTERIZATION AT THE INITIAL STAGES OF AIN CRYSTAL GROWTH G3.13 B.
LIU, Y. SHI, L. LIU, J.H. EDGAR, AND D.N. BRASKI HIGHLY SELECTIVE
PHOTOENHANCED WET ETCHING OF GAN FOR DEFECT INVESTIGATION AND DEVICE
FABRICATION G3.14 P. VISCONTI, MA. RESHCHIKOV, K.M. JONES, F. YUN, D.F.
WANG, R. CINGOLANI, H. MORKOC, C.W. LITTON, AND R.J. MOLNAR VI
SIMULATION OF STRESS GENERATION DURING GAN LATERAL EPITAXIAL OVERGROWTH
G3.15 ZHAOHUA FENG, EDWARD G. LOVELL, ROXANN L. ENGELSTAD, THOMAS F.
KUECH, AND SUSAN E. BABCOCK EFFECT OF N 2 PLASMA TREATMENTS ON DRY ETCH
DAMAGE IN N- AND P- TYPEGAN G3.16 D.G. KENT, K.P. LEE, A.P. ZHANG, B.
LUO, M.E. OVERBERG, C.R. ABEMATHY, F. REN, K.D. MACKENZIE, S.J. PEARTON,
AND Y. NAKAGAWA INVESTIGATION OF BUFFER LAYERS FOR GAN GROWN BY MBE
G3.17 FENG YUN, MICHAEL A. RESHCHIKOV, PAOLO VISCONTI, KEITH M. JONES,
DONGFENG WANG, MARC REDMOND, JIE CUI, COLE W. LITTON, AND HADIS MORKOC
SURFACE SEGREGATION AND COMPOSITION FLUCTUATIONS IN AMMONIA MBE AND
MOVPE OF INGAN G3.18 SERGEY YU. KARPOV, ROMAN A. TALALAEV, EUGENE V.
YAKOVLEV, AND YURI N. MAKAROV SURFACE MODIFICATION OF CUBIC GAN BUFFER
LAYER GROWN BY METALORGANIC VAPOR PHASE EPITAXY G3.20 AKIRA NAGAYAMA,
RYUJI KATAYAMA, JUN WU, KENTARO ONABE, HIDETAKA SAWADA, ELIKO TAKUMA,
HIDEKI ICHINOSE, AND YASUHIRO SHIRAKI THE EFFECT OF BUFFER LAYERS IN
MOCVD GROWTH OF GAN FILM ON 3C-SIC/SI SUBSTRATE G3.25 C.I. PARK, J.H.
KANG, K.C. KIM, K.Y. LIM, E.-K. SUH, AND K.S. NAHM ATOMIC FORCE
MICROSCOPY STUDY OF GAN GROWN ON A1 2 0 3 (0001) BYLP-MOVPE G3.28 K. XU,
D.H. LIM, B.L. LIU, X.L. DU, G.H. YU, A.W. JIA, A. YOSHIKAWA, AND K.
TAKAHASHI VAPOR PHASE SYNTHESIS AND CHARACTERIZATION OF GALLIUM NITRIDE
POWDERS G3.31 KAZUHIKO HARA, YOSHINORI MATSUO, AND YUUKI MATSUNO STEP
FLOW SURFACE MORPHOLOGY IN PLASMA ASSISTED MOLECULAR BEAM EPITAXY GROWN
GAN G3.33 KAZUHIDE KUSAKABE, AKIHIKO KIKUCHI, AND KATSUMI KISHINO GROWTH
MODE AND DEFECTS IN ALUMINUM NITRIDE SUBLIMATED ON (0001) 6H-SIC
SUBSTRATES G3.40 LIANGHONG LIU, BEI LIU, YING SHI, AND J.H. EDGAR VII
NUCLEATION OF GAN ON (0001) SAPPHIRE DURING MOCVD GROWTH: AN ATOMIC
FORCE AND HIGH RESOLUTION ELECTRON MICROSCOPY STUDY G3.41 F. DEGAVE, P.
RUTERANA, G. NOUET, J.H. JE, AND C.C. KIM INTERACTION BETWEEN BASAL
STACKING FAULTS AND PRISMATIC INVERSION DOMAIN BOUNDARIES IN GAN G3.44
PHILOMELA KOMNINOU, JOSEPH KIOSEOGLOU, EIRINI SARIGIANNIDOU, GEORGE P.
DIMITRAKOPULOS, THOMAS KEHAGIAS, ALEXANDROS GEORGAKILAS, GERARD NOUET,
PIERRE RUTERANA, AND THEODORAS KARAKOSTAS GROWTH OF QUATERNARY
AUNGAN/GAN HETEROSTRUCTURES BY PLASMA INDUCED MOLECULAR BEAM EPITAXY
WITH HIGH IN CONCENTRATION G3.4S A.P. LIMA, C.R. MISKYS, L. GOERGENS, *.
AMBACHER, A. WENZEL, *. RAUSCHENBACH, AND M. STUTZMANN A STUDY ON THE
GROWTH OF CUBIC GAN FILMS USING AN ALGAAS BUFFER LAYER GROWN ON GAAS
(100) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY G3.46 RYUHEI KIMURA,
KIYOSHI TAKAHASHI, AND H.T. GRAHN MICROSTRUCTURE OF GAN FILMS GROWN BY
RF-PLASMA ASSISTED MOLECULAR BEAM EPITAXY G3.47 PHILOMELA KOMNINOU,
THOMAS KEHAGIAS, JOSEPH KIOSEOGLOU, EIRINI SARIGIANNIDOU, THEODORAS
KARAKOSTAS, GERARD NOUET, PIERRE RUTERANA, KHALID AMIMER, SPYROS
MIKROULIS, AND ALEXANDROS GEORGAKILAS STRUCTURAL AND ELASTICITY-BASED
PROPERTIES OF SIC-BASED INTERFACES: THEIR RELEVANCE TO THE HETEROEPITAXY
OF III-V NITRIDES G3.49 P. MASRI, M. ROUHANI LARIDJANI, TH. STAUDEN, J.
PEZOLDT, AND M. AVEROUS STRAIN AND COMPOSITIONAL ANALYSIS OF INGAN/GAN
LAYERS G3.52 SERGIO PEREIRA, MARIA. R. CORREIA, ESTELA PEREIRA, C.
TRAGER-COWAN, F. SWEENEY, P.R. EDWARDS, K.P. O DONNELL, E. ALVES, A.D.
SEQUEIRA, AND N. FRANCO NOVEL CUBIC ZN X MGI. X O EPITAXIAL
HETEROSTRUCTURES ON SI (100) SUBSTRATES G3.53 A. KVIT, J. NARAYAN, A.K.
SHARMA, * JIN, J.F. MUTH, C.W. TENG, AND O.W. HOLLAND GROWTH AND
CHARACTERIZATION OF GAN BULK CRYSTALS VIA VAPOR PHASE TRANSPORT G3.54 H.
SHIN, D.B. THOMSON, P.Q. MIRAGLIA, S.D. WOLTER, R. SCHLESSER, Z. SITAR,
AND R.F. DAVIS VNI OBSERVATION OF DISLOCATION ETCH PITS IN EPITAXIAL
LATERAL OVERGROWTH GAN BY WET CHEMICAL ETCHING G3.56 T.C. WEN, S.C. LEE,
H.S. CHUANG, C.H. CHIOU, AND W.I. LEE DIRECT OBSERVATION OF BULK AND
INTERFACE STATES IN GAN ON SAPPHIRE GROWN BY HYDRIDE VAPOR PHASE EPITAXY
G3.59 S.H. GOSS, A.P. YOUNG, L.J. BRILLSON, D.C. LOOK, AND R J. MOLNAR
DOPANTS AND PROCESSING STABILITY, DIFFUSION, AND COMPLEX FORMATION OF
BERYLLIUM IN WURTZITEGAN G4.3 SUKIT LIMPIJUMNONG, CHRIS G. VAN DE WALLE,
AND JOERG NEUGEBAUER LOW RESISTANCE OPTICALLY TRANSPARENT CONTACTS TO
P-TYPE GAN USING OXIDIZED NI/AU AND ITO FOR LED APPLICATION G4.8 C.H.
LIN, D.L. HIBBARD, A. AU, H.P. LEE, Z.J. DONG, F.J. SZALKOWSKI, J. CHEN,
AND C. CHEN LA TERAL EPITAXY AND GROWTH * APPROACHES FOR REDUCTION OF
THE DEFECT DENSITY IN GROUP III NITRIDE BASED HETEROSTRUCTURES G5.1 T.S.
ZHELEVA, F. KAROUI, K. KIRCHNER, M. DERENGE, K.A. JONES, R.D. VISPUTE,
AND T. VENKATESAN CAN LATERALLY OVERGROWN GAN LAYERS BE FREE OF
STRUCTURAL DEFECTS? G5.2 D. CHEMS AND Z. LILIENTAL-WEBER FABRICATION OF
GAN LAYER WITH LOW DISLOCATION DENSITY USING FACET CONTROLLED ELO
TECHNIQUE G5.3 H. MIYAKE, FF. MIZUTANI, K. HIRAMATSU, Y. IYECHIKA, Y.
HONDA, AND T. MAEDA * CHARACTERISTICS OF FIELO-GAN GROWN BY HYDRIDE
VAPOR PHASE EPITAXY G5.6 AKIRA USUI, HARUO SUNAKAWA, KENJI KOBAYASHI,
HEIJI WATANABE, AND MASASHI MIZUTA *INVITED PAPER IX HETEROEPITAXY AND
CHARACTERIZATION OF LOW-DISLOCATION-DENSITY GAN ON PERIODICALLY GROOVED
SUBSTRATES G5.7 T. DETCHPROHM, M. YANO, R. NAKAMURA, S. SANO, S.
MOCHIDUKI, T. NAKAMURA, H. AMANO, AND I. AKASAKI OPTICAL PROPERTIES OF
MBE GROWN CUBIC ALGAN EPILAYERS AND ALGAN/GAN QUANTUM WEU STRUCTURES
G5.9 D.J. AS, T. FREY, M. BARTELS, A. KHARTCHENKO, D. SCHIKORA, K.
LISCHKA, R. GOLDHAHN, AND S. SHOKHOVETS OPTICAL PROPERTIES AND LIGHT
EMITTERS EFFECT OF THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIES
OF A GALNNAS/GAAS SINGLE QUANTUM WELL G6.3 LAURENT GRENOUILLET,
CATHERINE BRU-CHEVALLIER, GERARD GUILLOT, PHILIPPE GILET, PHILIPPE
BALLET, PHILIPPE DUVAUT, ANDRE CHENEVAS-PAULE, AND ALAIN MILLION
COMPARATIVE STUDY OF HVPE- AND MOCVD-GROWN NITRIDE STRUCTURES FOR UV
LASING APPLICATION G6.4 J.B. LAM, G.H. GAINER, S. BIDNYK, AMAL ELGAWADI,
G.H. PARK, J. KRASINSKI, J.J. SONG, D.V. TSVETKOV, AND V.A. DMITRIEV
LUMINESCENCE PROPERTIES OF AMORPHOUS AIN THIN FILM PHOSPHORS
INCORPORATED WITH MIXTURES OF TB, CU OR CU, CR G6.5 ANDREA L. MARTIN,
MEGHAN L. CALDWELL, MARTIN E. KORDESCH, CHANCE M. SPALDING, PAUL G. VAN
PATTEN, AND HUGH H. RICHARDSON VISIBLE EMISSION FROM THIN-FILM PHOSPHORS
OF AMORPHOUS AIN:CU, MN, AND CR G6.6 M.L. CALDWELL, A.L. MARTIN, CM.
SPALDING, P.G. VAN PATTEN, M.E. KORDESCH, AND H.H. RICHARDSON
PHOTOLUMINESCENCE STUDY OF DEFECTS IN GAN GROWN BY MOLECULAR BEAM
EPITAXY G6.7 MICHAEL A. RESHCHIKOV, MANHONG H. ZHANG, JIE CUI, PAOLO
VISCONTI, FENG YUN, AND HADIS MORKOC RAMAN SPECTROSCOPY STUDIES IN
INGAN/GAN WURTZITE EPITAXIAL FILMS G6.10 MARIA R. CORREIA, SERGIO
PEREIRA, TERESA MONTEIRO, ESTELA PEREIRA, AND EDUARDO ALVES X PHOTO- AND
CATHODOLUMINESCENCE INVESTIGATIONS OF PIEZOELECTRIC GAN/ALGAN QUANTUM
WELLS G6.12 E.M. GOLDYS, M. GODLEWSKI, M.R. PHILLIPS, AND A.A. TOROPOV
IR-VUV DIELECTRIC FUNCTION OF ALI JHIXN DETERMINED BY SPECTROSCOPIC
ELLIPSOMETRY G6.13 A. KASIC, M. SCHUBERT, B. RHEINLAENDER, J. OFF, F.
SCHOLZ, AND CM. HERZINGER INFLUENCE OF ER DEPTH PROFILES ON LUMINESCENCE
PROPERTIES OF ER- DOPEDGAN G6.15 SHIN-ICHIRO UEKUSA AND TOMOAKI HIRANO
CROSS-SECTIONAL CATHODOLUMINESCENCE STUDY IN GA-POLAR AND N- POLAR GAN
EPILAYERS G6.16 X.L. DU, D.H. LIM, *. XU, B.L. LIU, A.W. JIA, K.
TAKAHASHI, AND A. YOSHIKAWA OBSERVATION OF BAND GAP ENERGY FLUCTUATION
OF MICROCRYSTALLINE INGAN:ZN G6.18 HISASHI KANIE, KOSEI SUGIMOTO, AND
HIROAKI OKADO CATHODOLUMINESCENCE AND MICRO-STRUCTURE OF POLYCRYSTALLINE
GAN GROWN ON ZNO/SI G6.20 TSUTOMU ARAKI, HIDETAKA KAGATSUME, HIROAKI
AONO, AND YASUSHI NANISHI OPTICAL CHARACTERIZATION OF ALGAN/GAN MQW S
G6.21 RICARDO A. ROCHA, TERESA MONTEIRO, ESTELA PEREIRA, AND EDUARDO
ALVES CHARACTERIZATION OF THE MECHANISM OF ACTIVATION FOR VISIBLE
LUMINESCENCE IN TB-DOPED CRYSTALLINE AND AMORPHOUS AIN THIN FILMS G6.22
CM. SPALDING, M.L. CALDWELL, A.L. MARTIN, V.L. DIMITROVA, M.E. KORDESCH,
H.H. RICHARDSON, AND P.G. VAN PATTEN SHALLOW-IMPURITY-RELATED
PHOTOLUMINESCENCE IN HOMOEPITAXIAL GAN G6.23 V. KIRILYUK, M. ZIELINSKI,
P.C.M. CHRISTIANEN, A.R.A. ZAUNER, J.L. WEYHER, P.R. HAGEMAN, AND P.K.
LARSEN COMPARISON OF ER 3+ PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE
EXCITATION SPECTROSCOPY IN IN-SITU-DOPED GAN:ER AND ER- IMPLANTEDGAN
G6.26 ANDREA M. MITOFSKY, GEORGE * PAPEN, STEPHEN G. BISHOP, DONG-SEON
LEE, AND ANDREW J. STECKL DEGRADATION OF LUMINESCENCE FROM GAN DURING
ELECTRON BOMBARDMENT: EFFECTS OF BEAM VOLTAGE, CURRENT AND SCANNED AREA
G6.27 E.M. CAMPO, G.S. CARGILL III, J. RAMER, M. SCHURMAN, AND I.T.
FERGUSON OPTICAL AND ELECTRICAL PROPERTIES OF AL^J^N FILMS GROWN ON
SAPPHIRE (0001) BY PLASMA SOURCE MOLECULAR BEAM EPITAXY G6.29 Y.V.
DANYLYUK, M.J. LUKITSCH, * HUANG, G.W. AUNER, R. NAIK, AND V.M. NAIK
DEVELOPMENT OF AN AIN DEEP UV DETECTOR FOR SPACE APPLICATION G6.33 FENG
ZHONG, CHANGHE HUANG, YURI V. DANYLYUK, AND GREGORY W. AUNER OPTICAL
CONSTANTS, CRITICAL POINTS, AND PHONON MODES OF GAASN SINGLE LAYERS
G6.35 G. LEIBIGER, V. GOTTSCHALCH, A, KASIK, B. RHEINLAENDER, J. SIK, AND
M. SCHUBERT OPTICAL PROPERTIES OF A QUANTUM WELL OF A BX B ALLOY
SEMICONDUCTOR IN THE COHERENT POTENTIAL APPROXIMATION G6.36 YUZO
SHINOZUKA, HIROTSUGU KIDA, AND MASANORI WATARIKAWA RAMAN ANALYSIS OF
SINGLE CRYSTALLINE BULK ALUMINUM NITRIDE: TEMPERATURE DEPENDENCE OF THE
PHONON FREQUENCIES G6.38 JONATHAN M. HAYES, MARTIN KUBALL, YING SHI, AND
JAMES H. EDGAR PHOTOLUMINESCENCE STUDIES OF P-TYPE GAN:MG CO-DOPED WITH
OXYGEN G6.39 R.Y. KOROTKOV, J.M. GREGIE, AND B.W. WESSELS X-RAY
RECIPROCAL SPACE MAPPING STUDIES OF STRAINED GAN/ALGAN QUANTUM WELLS
G6.40 OLIVIER BRIOT, SANDRA RUFFENACH-CLUR, MATTHIEU MORET, AND
ROGER-LOUIS AULOMBARD GROUP ILL-NITRIDE BASED VCSEL FOR APPLICATIONS AT
THE WAVELENGTH OF 400NM G6.42 M. LINNIK AND A. CHRISTOU RELATIONSHIP
BETWEEN MICROSCOPIC STRUCTURE AND OPTICAL PROPERTY OF POLYCRYSTALLINE
GAN ON SILICA GLASS G6.43 HIDETAKA KAGATSUME, HIROAKI AONO, TSUTOMU
ARAKI, AND YASUSHI NANISHI XLL A GENERALIZED ROOSBROECK-SCHOCKLEY
RELATION FOR ILL-NITRIDES IN FAR-FROM-EQUILIBRIUM CONDITIONS G6.44 A.R.
VASCONCELLOS, R. LUZZI, C.G. RODRIQUEZ, V.N. FREIRE, AND A.P. DA COSTA
THE INFLUENCE OF DEFECTS AND PIEZOELECTRIC FIELDS ON THE LUMINESCENCE
FROM INGAN/GAN SINGLE QUANTUM WELLS G6.45 S.J. HENLEY AND D. CHEMS PHASE
SEPARATION IN MULTIPLE ZNO/CUBIC- MG^N^O SUPERLATTICE HETEROSTRUCTURES
OBSERVED VIA HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY A. KVIT,
G. DUSHER, A.K. SHARMA, C. JIN, J. NARAYAN, J. MUTH, AND C.W. TENG
PREPARATION OF 30X30 MM 2 FREE-STANDING GAN WAFER BY MECHANICAL LIFTOFF
AND OPTICAL PROPERTIES IN THE BACKSIDE OF THE FREE GAN BY
CATHODOLUMINESCENCE HWA-MOK KIM, JAE-EUNG OH, AND TAE-WON KANG GROWTH
AND CHARACTERIZATION OF EPITAXIAL AL,.,IN,N FILMS GROWN ON SAPPHIRE
(0001) BY PLASMA SOURCE MOLECULAR BEAM EPITAXY G6.54 MJ. LUKITSCH, G.W.
AUNER, R. NAIK, AND V.M. NAIK MBE GROWTH OF GAN USING NH 3 AND PLASMA
SOURCES G6.56 A.V. SAMPATH, A. BHATTACHARYYA, I. SANDEEP, H.M. NG, E.
ILIOPOULOS, AND T.D. MOUSTAKAS IN SITU PYROMETRIC INTERFEROMETRY FOR
MOLECULAR BEAM EPITAXY OF ALGA,. X N ON SI (111) G6.57 S.A. NIKISHIN, S.
FRANCOEUR, AND H. TEMKIN PLANAR FORCE-CONSTANT METHOD FOR LATTICE
DYNAMICS OF CUBIC INN G6.58 H.W. LEITE ALVES, J.L.A. ALVES, L.M.R.
SCOLFARO, AND J.R. LEITE HIGH DENSITY PLASMA ETCHING DAMAGE EFFECTS ON
CONTACTS TO N-GAN G6.61 RAJWINDER SINGH, CR. EDDY, JR., T.D. MOUSTAKAS,
AND H.M. NG ELECTRONIC TRANSPORT AND QUANTUM DOTS HIGH ELECTRON MOBILITY
IN FREE-STANDING GAN SUBSTRATES G7.2 A. SAXLER, D.C. LOOK, S. ELHAMRI,
J. SIZELOVE, D. CULL, W.C. MITCHEL, M. CALLAHAN, D. BLISS, L.
BOUTHILLETTE, SHENG-QI WANG, CM. SUNG, S.S. PARK, AND K.Y. LEE *INVITED
PAPER XIII G6.50 G6.51 * HIGH MAGNETIC FIELD STUDIES OF ALGAN/GAN
HETEROSTRUCTURES GROWN ON BULK GAN, SIC, AND SAPPHIRE SUBSTRATES G7.3 W.
KNAP, E. BOROVITSKAYA, M.S. SHUR, R. GASKA, G. KARCZEWSKI, B. BRANDT, D.
MAUDE, E. FRAYSSINET, P. LORENZINI, N. GRANDJEAN, J. MASSIES, J.W. YANG,
X. HU, G. SIMIN, M. ASIF KHAN, C. SKIERBISZEWSKI, P. PRYSTAWKO, I.
GRZEGORY, AND S. POROWSKI TWO-DIMENSIONAL ELECTRON GAS SCATTERING
MECHANISMS IN ALGAN/GAN HETEROSTRUCTURES G7.5 E. BOROVITSKAYA, W. KNAP,
M.S. SHUR, R. GASKA, E. FRAYSSINET, P. LORENZINI, N. GRANDJEN, *.
BAUMONT, J. MASSIES, C. SKIERBISZEWSKI, P. PRYSTAWKO, M. LESZCZYNSKI, I.
GRZEGORY, AND S. POROWSKI PERSISTENT PHOTOCONDUCTIVITY IN A HIGH
MOBILITY TWO DIMENSIONAL ELECTRON GAS IN AN ALGAN/GAN HETEROSTRUCTURE
G7.6 S. ELHAMRI, A. SAXLER, D. CULL, W.C. MITCHEL, C.R. ELSASS, LP.
SMORCHKOVA, B. HEYING, C. POBLENZ, P. FINI, S. KELLER, P.M. PETROFF,
S.P. DENBAARS, U.K. MISHRA, AND J.S. SPECK PHONON LIFETIMES AND PHONON
DECAY CHANNELS IN SINGLE CRYSTALLINE BULK ALUMINUM NITRIDE G7.7 M.
KUBALL, J.M. HAYES, YING SHI, AND J.H. EDGAR SURFACE STRUCTURE AND
POLARIZATION EFFECTS IN GAN THIN FILMS AS STUDIED BY ELECTRIC FORCE
MICROSCOPY G7.9 K.M. JONES, P. VISCONTI, F. YUN, M.A. RESHCHIKOV, A.A.
BASKI, AND H. MORKOC SPECIAL SESSION IN HONOR OF PROFESSOR AKASAKI *
RENAISSANCE AND PROGRESS IN NITRIDE SEMICONDUCTORS * MY PERSONAL HISTORY
OF NITRIDE RESEARCH G8.1 ISAMU AKASAKI * MICROWAVE ALGA LX N/GAN POWER
HEMT S G8.2 LESTER F. EASTMAN * REVIEW OF FACET CONTROLLED EPITAXIAL
LATERAL OVERGROWTH (FACELO) OF GAN VIA LOW PRESSURE VAPOR PHASE EPITAXY
G8.4 KAZUMASA HIRAMATSU AND HIDETO MIYAKE * INVITED PAPER XIV
CHARACTERIZATION AND BANDSTRUCTURE * GROWTH AND CHARACTERIZATION OF GAN
UNDERLYING LAYER USED IN BLUE-VIOLET GAN-BASED LASER DIODES ON SAPPHIRE
G9.1 KENJI FUNATO, TOMONORI HINO, SHIGETAKA TOMIYA, TAKAO MIYAJIMA,
TAKEHARU ASANO, TSYUYOSHI TOJYO, SHIGEKI HASHIMOTO, KATSUNORI YANASHIMA,
SHIRO UCHIDA, KOSHI TMAMURA, TOSHIMASA KOBAYASHI, AND MASAO IKEDA ROLE
OF LOCALIZED QUANTUM WELL EXCITONS IN INGAN QUANTUM WELL STRUCTURE
CORRELATED WITH MICROSTRUCTURAL ANALYSIS G9.3 S.F. CHICHIBU, T. SOTA,
AND S. NAKAMURA UV RAMAN STUDY OF A F (LO) AND E 2 PHONONS IN INGAN
ALLOYS GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION ON (0001)
SAPPHIRE SUBSTRATES G9.7 DIMITRI ALEXSON, LEAH BERGMAN, ROBERT J.
NEMANICH, MITRA DUTTA, MICHAEL A. STROSCIO, CA. PARKER, S.M. BEDAIR, NA.
EL-MASRY, AND FRAN ADAR UNIVERSAL BEHAVIOR OF THE PRESSURE COEFFICIENT
OF THE LIGHT ABSORPTION AND EMISSION IN INGAN STRUCTURES G9.8 P. PERLIN,
T. SUSKI, P. WISNIEWSKI, I. GORCZYCA, S. LEPKOWSKI, M. HANSEN, S.P.
DENBAARS, B. DAMILANO, N. GRANDJEAN, AND J. MASSIE PROPAGATION AND
SCATTERING OF EXCITON-POLARITONS IN NITRIDE-BASED MULTIPLE QUANTUM WELLS
G9.9 GUILLAUME MALPUECH, MARIAN ZAMFIRESCU, ALEXEY KAVOKIN, AND ALDO DI
CARLO TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF IN 0 .I S GA 0
.85WIN O .OI5GAO.985N QUANTUM WELLS WITH SI-DOPED BARRIERS G9.10 MEE-YI
RYU, YOUNG JUN YU, PHIL WON YU, EUN-JOO SHIN, EUNSOON OH, CHUL SOO SONE,
OK HYUN NAM, AND YONG JO PARK LUMINESCENCE AND STRUCTURAL PROPERTIES OF
INGAN EPILAYER, QUANTUM WELL AND QUANTUM DOT SAMPLES USING SYNCHROTRON
EXCITATION G9.LL K.P. O DONNELL, R.W. MARTIN, M.E. WHITE, M J. TOBIN,
J.F.W. MOSSELMANS, I.M. WATSON, B. DAMILANO, AND N. GRANDJEAN * INVITED
PAPER QUANTUM DOTS AND PHOTO DETECTORS * RECOMBINATION DYNAMICS IN
NITRIDE QUANTUM BOXES AND QUANTUM WELLS FOR COLORS RANGING FROM THE UV
TO THE RED GL0.1 P. LEFEBVRE, A. MOREL, M. GALLART, T. TALIERCIO, B.
GIL, J. ALLEGRE, H. MATHIEU, N. GRANDJEAN, B. DAMILANO, AND J. MASSIES
AC OPERATION OF GAN:ER THIN FILM ELECTROLUMINESCENT DISPLAY DEVICES
G10.4 J. HEIKENFELD AND A.J. STECKL * PERFORMANCE CHARACTERISTICS OF CW
INGAN MULTIPLE-QUANTUM- WELL LASER DIODES G10.6 MICHAEL KNEISSL, WILLIAM
S. WONG, CHRIS G. VAN DE WALLE, JOHN E. NORTHRAP, DAVID W. TREAT, MARK
TEEPE, NAOKO MIYASHITA, PETER KIESEL, AND NOBLE M. JOHNSON FABRICATION
AND CHARACTERIZATION OF IN,AL Y GAI.X. Y N ULTRAVIOLET DETECTORS G10.7
TOM N. ODER, JING LI, JINGYU LIN, AND HONGXING JIANG ALGAN P-I-N
PHOTODIODE ARRAYS FOR SOLAR-BLIND APPLICATIONS G10.9 P. LAMARRE, A.
HAIRSTON, S. TOBIN, K.K. WONG, M.F. TAYLOR, A.K. SOOD, M.B. REINE, M.J.
SCHURMAN, I.T. FERGUSON, R. SINGH, AND CR. EDDY, JR. ELECTRONIC
PROPERTIES AND TRANSPORT POLARIZATION EFFECTS IN AL I GA 1 .*N/GAN
SUPERLATTICES GLL.L ERIK L. WALDRON, E. FRED SCHUBERT, JOHN W. GRAFF,
ANDREI OSINSKY, MICHAEL J. MURPHY, AND WILLIAM F. SCHAFF GROWTH AND
INVESTIGATION OF GAN/AIN QUANTUM DOTS G11.2 HADIS MORKOC, MICHAEL A.
RESHCHIKOV, KEITH M. JONES, FENG YUN, PAOLO VISCONTI, MARSHALL I.
NATHAN, AND RICHARD J. MOLNAR IMPACT OF THE GROWTH POLAR DIRECTION ON
THE OPTICAL PROPERTIES OF GAN FILMS GROWN BY METALORGANIC VAPOR PHASE
EPITAXY GL 1.6 A. SETOGUCHI, K.YOSHIMURA, M. SUMIYA, A. UEDONO, AND S.F.
CHICHIBU * INVITED PAPER XVI STRUCTURAL EVOLUTION OF NI/AU CONTACT ON
GAN(OOOL) GL 1.7 CHONG COOK KIM, JONG KYU KIM, JONG-LAM LEE, MIN-SU YI,
JIN-WOO KIM, DO YOUNG NOH, YEUKUANG HWU, PIERRE RUTERANA, AND JUNG HO JE
POLARITY OF HEXAGONAL GAN GROWN ON GAAS (*)* AND (LLL)B SURFACES BY HVPE
AND MOVPE GL 1.8 *. TAKAHASHI, M. NAMERIKAWA, H. TANAKA, R. SOUDA, T.
SUEMASU, AND F. HASEGAWA ALGAN/INGAN HETEROSTRUCTURE FIELD EFFECT
TRANSISTORS GROWN ON SAPPHIRE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
GIL.11 CHANG-CHENG CHUO, CHIA-MIN KAN, JEN-BIN CHYI, TZER-EN NEE,
CHIA-MING LEE, AND CHIN-KUN PENG EMISSION CHARACTERISTICS OF GAN-BASED
EL DEVICE WITH AC OPERATION G11.13 TOHRU HONDA AND HIDEO KAWANISHI
HIGH-TEMPERATURE ELECTRON TRANSPORT PROPERTIES IN ALGAN/GAN
HETEROSTRUCTURE FIELD EFFECT TRANSISTORS GIL.14 NARIHIKO MAEDA, TADASHI
SAITOH, KOTARO TSUBAKI, TOSHIO NISHIDA, AND NAOKI KOBAYASHI ELECTRICAL
PROPERTIES OF INN GROWN BY RF-MBE G11.18 YOSHIKI SAITO, NOBUAKI
TERAGUCHI, AKIRA SUZUKI, TOMOHIRO YAMAGUCHI, TSUTOMU ARAKI, AND YASUSHI
NANISHI COMPARISON OF 500NM INGAN/GAN QW EMISSION PROPERTIES INDUCED BY
PIEZOELECTRIC FIELD EFFECT AND PHASE SEPARATION G11.19 BONG KEE, J.M.
KOH, AND EUIJOON YOON PROFDING ELECTRIC FIELDS IN GANN/INGAN/GAN SINGLE
QUANTUM WELLS BY ELECTRON HOLOGRAPHY GL 1.20 JUAN CAI, M.R. MCCARTNEY,
AND F.A. PONCE INVESTIGATION OF SIDEWALL RECOMBINATION IN GAN USING A
QUANTUM WELL PROBE G11.21 E.D. HABERER, M. WOODS, A. STONAS, C.-H. CHEN,
S. KELLER, M. HANSEN, U. MISHRA, S. DENBAARS, J. BOWERS, AND E.L. HU
HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF PECVD- GROWN SI0 2
MIS STRUCTURE ON GAN AND GAN/AL E . 4 GA 0 , 6 N/GAN HETEROSTRUCTURE
G11.24 P. CHEN, Y.G. ZHOU, H.M. BU, W.P. LI, Z.Z. CHEN, B. SHEN, R.
ZHANG, AND Y.D. ZHENG XVLL ELECTRONIC STRUCTURE OF GAN QUANTUM DOTS WITH
AN ADJACENT THREADING DISLOCATION G11.25 A.D. ANDREEV, J.R. DOWRIES, AND
E.P. O REILLY NON-STATIONARY PHOTOCONDUCTIVITY OF GAN NANOCOMPOSITES IN
ARTIFICIAL OPAL MATRIX G11.26 M. NIEHUS, S. KOYNOV, R. SCHWARZ, N.A.
FEOKTISTOV, V.G. GOLUBEV, D.A. KURDYUKOV, AND A.B. PEVTSOV LOW-NOISE,
LOW-DARK-CURRENT GAN DIODES FOR UV DETECTORS GL 1.27 PETER W. DEELMAN,
ROBERT N. BICKNELL-TASSIUS, SERGEY NIKISHIN, AND HENRYK TEMKIN AIN
ACOUSTIC WAVE SENSORS USING EXCIMER LASER MICROMACHINING TECHNIQUES GL
1.28 FENG ZHONG, CHANGHE HUANG, AND GREGORY W. AUNER HIGH RESISTIVITY
GAN FORMED BY ION IMPLANTATION G11.30 JUN KUDO, YUJI HISHIDA, MASANORI
WATANABE, TOMOAKI HATAYAMA, AND TAKASHI FUYUKI SELF-ALIGNED PROCESS FOR
EMITTER- AND BASE-REGROWTH GAN HBTS ANDBJTS G11.32 K.P. LEE, A.P. ZHANG,
G. DANG, F. REN, J. HAN, S.N.G. CHU, W.S. HOBSON, J. LOPATA, CR.
ABERNATHY, S J. PEARTON, AND J.W. LEE HOT ELECTRON TRANSPORT IN AIN GL
1.33 RAMON COLLAZO, RAOUL SCHLESSER, AMY ROSKOWSKI, ROBERT F. DAVIS, AND
Z. SITAR ELECTRIC FIELDS AT THE SIC/AIN AND SIC/GAN POLAR INTERFACES
G11.34 MORAD ROUHANI LARIDJANI, PIERRE MASRI, AND JACEK A. MAJEWSKI
POLARIZATION INDUCED 2D HOLE GAS IN GAN/AIGAN HETEROSTRUCTURES GL 1.35
S. HACKENBUCHNER, J.A. MAJEWSKI, G. ZANDLER, O. AMBACHER, AND P. VOGL
SYNTHESIS, STRUCTURE, AND LUMINESCENCE OF A 2 B 4 C 5 NITRIDES G11.36
VYACHESLAV BONDAR, LEV AXELRUD, VLADIMIR DAVYDOV, AND TOM FELTER GAS
SOURCE MOLECULAR BEAM EPITAXY OF HIGH QUALITY ALGAN ON SI AND SAPPHIRE
G11.37 S. NIKISHIN, G. KIPSHIDZE, V. KURYATKOV, A. ZUBRILOV, K. CHOI,
LU. GHERASOIU, L. GRAVE DE PERALTA, T. PROKOFYEVA, M. HOLTZ, R. ASOMOZA,
YU. KUDRYAVTSEV, AND H. TEMKIN XVIU CHARACTERIZATION OF ION IMPLANTED
GAN * J. SKROMME, G.L. MARTINEZ, L. KRASNOBAEV, AND D.B. POKER G11.39
PRELIMINARY CHARACTERIZATION OF GAN MBE EPITAXIAL LAYERS GROWN ON
NANOPOROUS 6H-SIC SUBSTRATES G11.41 J.T. WOLAN, A. GOPALKRISHNA, S.E.
SADDOW, M. MYNBAEU, H. MORKOC, M. RESHCHIKOV, F. YUN, V. DMITRIEV, AND
C.E.C. WOOD CHARACTERIZATION OF GAN MOS STRUCTURES USING PHOTOANODICALLY
GROWN OXIDES WITH RESPECT TO FET DEVICES G11.42 D. MISTELE, T. ROTTER,
R. FERRETTI, F. FEDLER, H. KLAUSING, O.K. SEMCHINOVA, J. STEMMER, J.
ADERHOLD, AND J. GRAUL A COMPARATIVE STUDY OF THE INFLUENCE OF THE LOCAL
DENSITY APPROXIMATION AND THE GENERALIZED GRADIENT APPROXIMATION ON THE
CALCULATED PROPERTIES OF THE ILL-NITRIDE (110) SURFACES G11.46 H.W.
LEITE ALVES, J.L.A. ALVES, R.A. NOGUEIRA, AND J.R. LEITE SURFACE
ELEVATION AND STRAIN IN ION IMPLANTED GAN GL 1.53 *. MOLNAR, S.B. QADRI,
S. SCHIESTEL, R.M. STROUD, AND C.A. CAROSELLA ANALYSIS OF STRAIN IN
SUB-GRAINS WITH VARIABLE MISORIENTATION IN GAN EPILAYERS BY DIGITAL
PROCESSING OF HRTEM IMAGES GL 1.54 S. KRET, P. RUTERANA, J. CHEN, AND G.
NOUET DEEP LEVEL FORMATION IN UNDOPED AND OXYGEN-DOPED GAN GL 1.56 J.M.
GREGIE, R.Y. KOROTKOV, AND B.W. WESSELS PLASMA-INDUCED EFFECTS ON THE
THERMAL CONDUCTIVITY OF HYDRIDE VAPOR PHASE EPITAXY GROWN N-GAN/SAPPHIRE
(0001) GL 1.57 D.I. FLORESCU, FRED H. POLLAK, WILLIAM B. LANFORD, FARID
KHAN, I. ADESIDA, AND R.J. MOLNAR EFFECT OF EXTERNALLY-IMPOSED RADIAL
STRAIN ON THE PIEZOELECTRIC RESPONSE OF MOCVD-GROWN GALLIUM NITRIDE GL
1.58 JENNIFER A. HIMES, JAMES R. WILLIS, AND DANIEL A. GULINO ***
ANALYSIS OF THREADING DISLOCATIONS IN ELO-GAN GROWN WITH CONTROLLED
FACET PLANES GL 1.59 NORIYUKI KUWANO, KAYO HORIBUCHI, HIDETO MIYAKE, AND
KAZUMASA HIRAMATSU XIX LIGHT EMITTERS AND STRAIN CONTROL * GROUP-ILL
NITRIDE QUANTUM HETEROSTRUCTURES EMITTING IN THE WHOLE VISIBLE RANGE
G12.1 NICOLAS GRANDJEAN, BENJAMIN DAMILANO, AND JEAN MASSIES INTEGRATION
OF IN^GA^N LASER DIODES WITH DISSIMILAR SUBSTRATES BY LASER LIFT-OFF.
G12.2 WILLIAM S. WONG, MICHAEL KNEISSL, PING MEI, DAVID W. TREAT, MARK
TEEPE, AND NOBLE M. JOHNSON HIGH EFFICIENCY UV EMITTER USING HIGH
QUALITY GAN/ALGA^N MULTI-QUANTUM WELL ACTIVE LAYER G12.3 M. IWAYA, S.
TERAO, T. UKAI, R. NAKAMURA, S. KAMIYAMA, H. AMANO, AND I. AKASAKI
CURRENT INJECTION UV-EMISSION FROM INALGAN MULTI-QUANTUM- WELL
LIGHT-EMITTING DIODES G12.6 A. KINOSHITA, H. HIRAYAMA, M. AINOYA, J.S.
KIM, A. HIRATA, AND Y. AOYAGI * DEFECT AND STRESS CONTROL OF ALGAN AND
FABRICATION OF HIGH- EFFICIENCY UV-LED G12.7 H. AMANO, M. IWAYA, S.
NITTA, S. TERAO, R. NAKAMURA, T. UKAI, S. SAITOH, S. KAMIYAMA, C.
WETZEL, AND I. AKASAKI IMPROVED OPTICAL QUALITY OF BALGAN/AIN MQW
STRUCTURE GROWN ON **-SIC SUBSTRATE BY CONTROLLING RESIDUAL STRAIN USING
MULTI-BUFFER LAYER G12.9 TAKAYOSHI TAKANO, HIDEO KAWANISHI, MAKOTO
KURIMOTO, YOSHIYUKI ISHIHARA, MASATO HORIE, AND JUN YAMAMOTO LIGHT
EMITTERS AND ELECTRONIC DEVICES THE INVESTIGATION OF INGAN MQW
ELECTROABSORPTION MODULATOR USING THE LED/MODULATOR/DETECTOR
MONOLITHICALLY INTEGRATED STRUCTURE G13.3 SW. CHUNG, Y.S. ZHAO, C.H.
LIN, AND H.P. LEE FABRICATION OF A HIGH POWER GAN METAL SEMICONDUCTOR
FIELD- EFFECT TRANSISTOR G13.4 SEIKOH YOSHIDA AND HIROTATSU ISHII
INVITED PAPER METAL-SEMICONDUCTOR CONTACTS AND CPW MMIC ISSUES FOR
ALGAN/GAN FETS G13.9 BART JACOBS, MARK KRAMER, BRAM VAN STRAATEN, THIEU
KWASPEN, FOUAD KAROUTA, PETER DE HEK, RAYMOND VAN DIJK, AND FRANK VAN
VLIET * P-INGAN/N-GAN HETEROJUNCTION DIODES AND THEIR APPLICATION TO
HETEROJUNCTION BIPOLAR TRANSISTORS G13.10 TOSHIKI MAKIMOTO, KAZUHIDE
KUMAKURA, TOSHIO NISHIDA, AND NAOKI KOBAYASHI AUTHOR INDEX SUBJECT INDEX
*INVITED PAPER XXI
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV014123591 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.15.N57 |
| callnumber-search | TK7871.15.N57 |
| callnumber-sort | TK 47871.15 N57 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UD 8400 |
| ctrlnum | (OCoLC)123151114 (DE-599)BVBBV014123591 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift 2000 Boston Mass. gnd-content |
| genre_facet | Konferenzschrift 2000 Boston Mass. |
| id | DE-604.BV014123591 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:58:06Z |
| institution | BVB |
| isbn | 1558995498 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009678579 |
| oclc_num | 123151114 |
| open_access_boolean | |
| owner | DE-29T DE-83 |
| owner_facet | DE-29T DE-83 |
| physical | Getr. Zählung Ill., graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society symposia proceedings |
| series2 | Materials Research Society symposia proceedings |
| spelling | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. ed.: Christian Wetzel ... Warrendale, Pa. Materials Research Soc. 2001 Getr. Zählung Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society symposia proceedings 639 Gallium nitride Congresses Nitrides Congresses Optoelectronic devices Congresses Wide gap semiconductors Congresses Wide gap semiconductors Materials Congresses Galliumnitrid (DE-588)4375592-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2000 Boston Mass. gnd-content Galliumnitrid (DE-588)4375592-6 s DE-604 Wetzel, Christian Sonstige oth Materials Research Society symposia proceedings 639 (DE-604)BV001899105 639 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009678579&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. Materials Research Society symposia proceedings Gallium nitride Congresses Nitrides Congresses Optoelectronic devices Congresses Wide gap semiconductors Congresses Wide gap semiconductors Materials Congresses Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4375592-6 (DE-588)1071861417 |
| title | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. |
| title_auth | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. |
| title_exact_search | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. |
| title_full | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. ed.: Christian Wetzel ... |
| title_fullStr | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. ed.: Christian Wetzel ... |
| title_full_unstemmed | GaN and related alloys - 2000 symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. ed.: Christian Wetzel ... |
| title_short | GaN and related alloys - 2000 |
| title_sort | gan and related alloys 2000 symposium held november 27 december 1 2000 boston massachusetts u s a |
| title_sub | symposium held November 27 - December 1, 2000, Boston, Massachusetts, U.S.A. |
| topic | Gallium nitride Congresses Nitrides Congresses Optoelectronic devices Congresses Wide gap semiconductors Congresses Wide gap semiconductors Materials Congresses Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Gallium nitride Congresses Nitrides Congresses Optoelectronic devices Congresses Wide gap semiconductors Congresses Wide gap semiconductors Materials Congresses Galliumnitrid Konferenzschrift 2000 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009678579&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT wetzelchristian ganandrelatedalloys2000symposiumheldnovember27december12000bostonmassachusettsusa |