Verfügbarkeit: Proceedings :: THWS Bibkatalog

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Bibliographische Detailangaben
Körperschaft:	ICNS Denver, Colo (VerfasserIn)
Format:	Tagungsbericht Buch
Sprache:	English
Veröffentlicht:	Berlin Wiley-VCH 2002
Ausgabe:	1. ed.
Schlagworte:	Konferenzschrift
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	XX, 916 S. Ill., graph. Darst.

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Datensatz im Suchindex

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adam_text	CONTENTS PREFACE . V SIGNIFICANT RECENT TECHNOLOGICAL ADVANCES GAN-BASED LIGHT-EMITTING DIODES AND LASER DIODES, AND THEIR RECENT PROGRESS (PLENARY) S. N AGAHAMA , N. I WASA , M. S ENOH , T. M ATSUSHITA , Y. S UGIMOTO , H. K IYOKU , T. K OZAKI , M. S ANO , H. M ATSUMURA , H. U MEMOTO , K. C HOCHO , T. Y ANAMOTO , AND T. M UKAI . 1-7 GAN-BASED MQW LIGHT EMITTING DEVICES (PLENARY) M. K OIKE , S. N AGAI , S. Y AMASAKI , Y. T EZEN , A. K OJIMA , AND S. I WAYAMA . 9-13 PERFORMANCE OF HIGH-POWER ALINGAN LIGHT EMITTING DIODES (PLENARY) A.Y. K IM , W. GO TZ , D.A. S TEIGERWALD , J.J. W IERER , N.F. G ARDNER , J. S UN , S.A. S TOCKMAN , P.S. M ARTIN , M.R. K RAMES , R.S. K ERN , AND F.M. S TERANKA . . . 15-21 CW INGAN MULTIPLE-QUANTUM-WELL LASER DIODES ON COPPER SUBSTRATES (PLENARY) M. K NEISSL , W.S. W ONG , D.W. T REAT , M. T EEPE , N. M IYASHITA , AND N.M. J OHNSON . 23-29 GAN HFETS ON SIC SUBSTRATES GROWN BY NITROGEN PLASMA MBE (PLENARY) M. M ICOVIC , J.S. M OON , T. H USSAIN , P. H ASHIMOTO , W.S. W ONG , AND L. M C C RAY 31-35 PROGRESS IN GROWTH AND PHYSICS OF NITRIDE-BASED QUANTUM DOTS (PLENARY) Y. A RAKAWA . 37-45 LASER DIODES A BAND-TAIL MODEL FOR INGAN ALLOY SYSTEM AND DESIGN FOR QUANTUM WELL LASER OPERATION (INVITED) A.A. Y AMAGUCHI , M. K URAMOTO , M. N IDO , AND M. M IZUTA . 47-54 NOVEL TECHNIQUES FOR STABILIZING TRANSVERSE-MODE IN ALGALNN-BASED LASER DIODES S. K IJIMA , T. T OJYO , S. G OTO , M. T AKEYA , T. A SANO , T. H INO , S. U CHIDA , AND M. I KEDA . 55-58 SYSTEMATICS OF OPTICAL GAIN IN GALNN/GAN LASER STRUCTURES S. H EPPEL , A. H ANGLEITER , S. B ADER , G. B R U DERL , A. W EIMAR , V. KU MMLER , A. L ELL , V. H ARLE , J. O FF , B. K UHN , AND F. S CHOLZ . 59-63 INFLUENCE OF THE TRANSVERSE AND LATERAL WAVEGUIDE ON THE FAR FIELD PATTERN IN GAN BASED LASER STRUCTURES M. RO WE , P. M ICHLER , J. G UTOWSKI , S. B ADER , G. B R U DERL , V. KU MMLER , A. W EIMAR , A. L ELL , AND V. HA RLE . 65-68 DISLOCATIONS IN GAN-BASED LASER DIODES ON EPITAXIAL LATERAL OVERGROWN GAN LAYERS S. T OMIYA , H. N AKAJIMA , K. F UNATO , T. M IYAJIMA , K. K OBAYASHI , T. H INO , S. K UJIMA , T. A SANO , AND M. I KEDA . 69-72 GROWTH, OPTICAL AND STRUCTURAL CHARACTERIZATION OF INGAN/GAN/ALGAN OPTICALLY PUMPED LASERS W.V. L UNDIN , A.V. S AKHAROV , A.S. U SIKOV , D.A. B EDAREV , A.F. T SATSULNIKOV , RU C HIN T U , S UN B IN Y IN , AND J IM Y. C HI . 73-77 VIII CONTENTS MULTIPLE QUANTUM WELL INGAN/GAN BLUE OPTICALLY PUMPED LASERS OPERATING IN THE SPECTRAL RANGE OF 450-470 NM G.P. Y ABLONSKII , E.V. L UTSENKO , V.N. P AVLOVSKII , I.P. M ARKO , A.L. G URSKII , V.Z. Z UBIALEVICH , O. S CH O N , H. P ROTZMANN , M. LU NENB O RGER , B. S CHINELLER , AND M. H EUKEN . LIGHT EMITTING DEVICES GROWTH AND OPTICAL PROPERTIES OF QUATERNARY INALGAN FOR 300 NM BAND UV-EMIT- TING DEVICES (INVITED) H. H IRAYAMA , A. K INOSHITA , A. H IRATA , AND Y. A OYAGI . LASER-LIKE EMISSION IN A BLUE-GREEN SPECTRAL RANGE FROM INGAN/GAN/ALGAN STRUCTURES UNDER OPTICAL PUMPING A.V. S AKHAROV , A.S. U SIKOV , W.V. L UNDIN , D.A. B EDAREV , A.F. T SATSULNIKOV , E.E. Z AVARIN , A.L B ESULKIN , N.N. L EDENTSOV , AND D. B IMBERG . PULSED ATOMIC LAYER EPITAXY OF QUARTERNARY ALINGAN LAYERS FOR ULTRAVIOLET LIGHT EMITTERS J.P. Z HANG , E. K UOKSTIS , Q. F AREED , H.M. W ANG , J.W. Y ANG , G. S IMIN , M. A SIF K HAN , G. T AMULAITIS , G. K URILCIK , S. J URSENAS , A. Z UKAUSKAS , R. G ASKA , AND M. S HUR . ESTIMATION OF DEVICE PROPERTIES IN ALGALNN-BASED LASER DIODES BY TIME-RESOLVED PHOTOLUMINESCENCE T. H INO , T. A SANO , T. T OJYO , S. K IJIMA , S. T OMIYA , T. M IYAJIMA , S. U CHIDA , AND M. I KEDA . A HIGH INJECTION RESONANT CAVITY VIOLET LIGHT EMITTING DIODE INCORPORATING (AL, GA)N DISTRIBUTED BRAGG REFLECTOR M. D IAGNE , Y IPING H E , H. Z HOU , E. M AKARONA , A.V. N URMIKKO , J. H AN , T. T AKEUCHI , AND M. K RAMES . CORRELATION OF BARRIER HEIGHT AND NONRADIATIVE CARRIER RECOMBINATION AND THE CON SEQUENCES FOR OPTICAL GAIN IN GAN BASED LASER STRUCTURES M. V EHSE , P. M ICHLER , I. G OSLING , M. RO WE , J. G UTOWSKI , S. B ADER , A. L ELL , G. B R U DERL , AND V. H ARLE . TEN-MILLIWATT OPERATION OF AN ALGAN-BASED LIGHT EMITTING DIODE GROWN ON GAN SUBSTRATE T. N ISHIDA AND N. K OBAYASHI . HIGH-EFFICIENCY GAN/AL A GA 1A N MULTI-QUANTUM-WELL LIGHT EMITTER GROWN ON LOW DISLOCATION DENSITY AL A GAI_ A N M. I WA YA , S. T ERAO , T. S ANO , S. T AKANAMI , T. U KAI , R. N AKAMURA , S. K AMIYAMA , H. A MANO , AND I. A KASAKI . HIGH OUTPUT POWER INGAN ULTRAVIOLET LIGHT-EMITTING DIODES FABRICATED ON PAT TERNED SUBSTRATES USING METALORGANIC VAPOR PHASE EPITAXY K. T ADATOMO , H. O KAGAWA , Y. O HUCHI , T. T SUNEKAWA , T. J YOUICHI , Y. I MADA , M. K ATO , H. K UDO , AND T. T AGUCHI . EXTRACTION EFFICIENCY OF GAN-BASED LEDS S.S. S CHAD , M. S CHERER , M. S EYBOTH , AND V. S CHWEGLER . ELECTROABSORPTION SPECTROSCOPY - DIRECT DETERMINATION OF THE STRONG PIEZOELECTRIC FIELD IN INGAN/GAN HETEROSTRUCTURE DIODES P. K IESEL , F. R ENNER , M. K NEISSL , N.M. J OHNSON , AND G.H. DO HLER . 79-82 83-89 91-94 95-99 101-104 105-108 109-112 113-116 117-120 121-125 127-130 131-134 CONTENTS IX FABRICATION OF 50-100 NM PATTERNED INGAN BLUE LIGHT EMITTING HETEROSTRUCTURES LU C HEN , A IJUN Y IN , J.-S. I M , A.V. N URMIKKO , J.M. X U , AND J. H AN . 135-138 A MATRIX ADDRESSABLE 1024 ELEMENT BLUE LIGHT EMITTING INGAN QW DIODE ARRAY I. O ZDEN , M. D IAGNE , A.V. N URMIKKO , J. H AN , AND T. T AKEUCHI . 139-142 ULTRAVIOLET PUMPED TRICOLOR PHOSPHOR BLEND WHITE EMITTING LEDS U. K AUFMANN , M. K UNZER , K. KO HLER , H. O BLOH , W. P LETSCHEN , P. S CHLOTTER , R. S CHMIDT , J. W AGNER , A. E LLENS , W. R OSSNER , AND M. K OBUSCH . 143-146 STRIPE GEOMETRY LIGHT EMITTING DIODES OVER PULSED LATERAL EPITAXIAL OVERGROWN GAN FOR SOLID STATE WHITE LIGHTING M. S HATALOV , A. C HITNIS , D. B ASAK , J.W. Y ANG , Q. F AREED , G. S IMIN , M.A SIF K HAN , R. G ASKA , AND M.S. S HUR . 147-150 INGAN MULTIPLE-QUANTUM-WELL LIGHT EMITTING DIODES ON SI(LLL) SUBSTRATES B.J. Z HANG , T. E GAWA , H. I SHIKAWA , N. N ISHIKAWA , T. J IMBO , AND M. U MENO . . 151-154 CRACK-FREE INGAN/GAN LIGHT EMITTERS ON SI(LLL) A. D ADGAR , A. A LAM , T. R IEMANN , J. B LASING , A. D IEZ , M. P OSCHENRIEDER , M. S TRASSBURG , M. H EUKEN , J. C HRISTEN , AND A. K ROST . 155-158 ELECTROLUMINESCENCE STUDIES OF NITRIDE-RICH GANI_ X P X SQW STRUCTURE GROWN BY LASER-ASSISTED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION J. K IKAWA , S. Y OSHIDA , AND Y. I TOH . 159-162 CHARACTERISTICS OF INGAN/GAN LIGHT-EMITTING DIODE WITH SI B-DOPED GAN CONTACT LAYER S.-R. J EON , M.S. JO, T.-V. H UMG , G.M. Y ANG , H.K. C HO , J.Y. L EE , S.W. H WANG , AND S.J. S ON . 163-166 BURIED TUNNEL CONTACT JUNCTIONS IN GAN-BASED LIGHT-EMITTING DIODES S.-R. J EON , Y.H. S ONG , H.J. J ANG , K.S. K IM , G.M. Y ANG , S.W. H WANG , AND S.J. S ON 167-170 NUCLEAR MICROPROBE ANALYSIS OF GAN BASED LIGHT EMITTING DIODES L. H IRSCH , A.S. B ARRIERE , P. M ORETTO , B. D AMILANO , N. G RANDJEAN , J. M ASSIES , AND J.Y. D UBOZ . 171-174 THE SILICON NITRIDE FILM FORMED BY ECR-CVD FOR GAN-BASED LED PASSIVATION K.M. C HANG , C.C. L ANG , AND C.C. C HENG . 175-178 A NEW COMBUSTION SYNTHESIS METHOD FOR GAN:EU 3+ AND GA2O3:EU 3+ LUMINESCENT POWDERS G.A. H IRATA , F. R AMOS , R. G ARCIA , E.J. B OSZE , J. M C K ITTRICK , O. C ONTRERAS , AND F.A. P ONCE . 179-182 GAN-BASED TRANSISTORS HIGH CURRENT GAINS OBTAINED BY INGAN/GAN DOUBLE HETEROJUNCTION BIPOLAR TRANSIS TORS T. M AKIMOTO , K. K UMAKURA , AND N. K OBAYASHI . 183-186 ALGAN RESONANT TUNNELING DIODES GROWN BY RF-MBE A. K IKUCHI , R. B ANNAI , AND K. K ISHINO . 187-190 15 W ALGAN/GAN HETEROJUNCTION FET ON SAPPHIRE SUBSTRATE Y. A NDO , Y. O KAMOTO , H. M IYAMOTO , N. H AYAMA , T. N AKAYAMA , K. K ASAHARA , Y. O HNO , AND M. K UZUHARA . 191-194 X CONTENTS BACK BIAS EFFECTS IN ALGAN/GAN HFETS M.J. U REN , D. H ERBERT , T. M ARTIN , B.T. H UGHES , J. B IRBECK , R. B ALMER , A.J. P IDDUCK , AND S.K. J ONES . 195-198 ALGAN/GAN HEMT OPTIMIZATION USING THE ROUNDHEMT TECHNOLOGY M. M ARSO , P. J AVORKA , A. A LAM , M. W OLTER , H. H ARDTDEGEN , A. FOX, M. H EUKEN , P. K ORDOS , AND H. LU TH . 199-202 RELIABILITY EVALUATION OF HIGH POWER ALGAN/GAN HEMTS ON SIC SUBSTRATE H. K IM , V. T ILAK , B.M. G REEN , J.A. S MART , W.J. S CHAFF , J.R. S HEALY , AND L.F. E ASTMAN . 203-206 TEMPERATURE DEPENDENCE OF HIGH-FREQUENCY PERFORMANCES OF ALGAN/GAN HEMTS M. A KITA , K. K ISHIMOTO , AND T. M IZUTANI . 207-211 KILOVOLT ALGAN/GAN HEMTS AS SWITCHING DEVICES N.-Q. Z HANG , B. M ORAN , S.B. D EN B AARS , U.K. M ISHRA , X.W. W ANG , AND T.P. M A 213-217 HIGH-TEMPERATURE PERFORMANCE OF ALGAN/GAN METAL-OXIDE-SEMICONDUCTOR HET EROSTRUCTURE FIELD-EFFECT-TRANSISTORS G. S IMIN , A. T ARAKJI , X. HU, A. K OUDYMOV , J. Y ANG , M. A SIF K HAN , M.S. S HUR , AND R. G ASKA . 219-222 ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH HIGH AL COMPOSITIONS FABRICATED WITH SELECTIVE-AREA REGROWTH N. M AEDA , T. S AITOH , K. T USUBAKI , AND N. K OBAYASHI . 223-226 OPTIMISATION OF ALGAN/GAN HETEROSTRUCTURES FOR FIELD EFFECT TRANSISTORS GROWN BY METALORGANIC VAPOUR PHASE EPITAXY P.J. P ARBROOK , D.A. W OOD , W.-S. T AN , P.A. H OUSTON , G. H ILL , C.R. W HITEHOUSE , R.W. M ARTIN , C. T RAGER -C OWAN , AND A. W ATT . 227-231 BIAS STRESS MEASUREMENTS ON HIGH PERFORMANCE ALGAN/GAN HFET DEVICES Y. L IU , J.A. B ARDWELL , S.P. M C A LISTER , H. T ANG , J.B. W EBB , AND T.W. M AC E LWEE . 233-237 GADOLINIUM OXIDE AND SCANDIUM OXIDE: GATE DIELECTRICS FOR GAN MOSFETS B.P. G ILA , J.W. J OHNSON , R. M EHANDRU , B. L UO , A.H. O NSTINE , K.K. A LLUMS , V. K RISHNAMOORTY , S. B ATES , C.R. A BERNATHY , F. R EN , AND S.J. P EARTON . 239-242 A HIGH-POWER GAN-BASED FIELD-EFFECT TRANSISTOR FOR LARGE-CURRENT OPERATION S. Y OSHIDA AND H. I SHII . 243-246 CHARACTERISTIC ANALYSIS OF SAW FILTERS FABRICATED USING GAN THIN FILMS H WAN -H EE J EONG , S UN -K I K IM , Y OUNG -C HUL J UNG , H YUN -C HUL C HOI , J UNG -H EE L EE , AND Y ONG -H YUN L EE . 247-250 QUASI-TWO-DIMENSIONAL MODELING OF GAN BASED MODFETS F. S ACCONI , A. D I C ARLO , P. L UGLI , AND H. M ORKO ? . 251-254 HETEROSTRUCTURE FIELD EFFECT TRANSISTOR TYPES WITH NOVEL GATE DIELECTRICS D. M ISTELE , T. R OTTER , Z. B OUGRIOUA , K.S. RO VER , F. F EDLER , H. K LAUSING , J. S TEMMER , O.K. S EMCHINOVA , J. A DERHOLD , AND J. G RAUL . 255-258 CONTENTS XI THE PINCH-OFF BEHAVIOUR AND CHARGE DISTRIBUTION IN ALGAN-GAN-ALGAN-GAN DOUBLE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS M. Z ERVOS , A. K OSTOPOULOS , G. C ONSTANTINIDIS , M. K AYAMBAKI , S. M IKROULIS , N. F LYTZANIS , AND A. G EORGAKILAS . 259-262 UNIFORMITY AND SCALABILITY OF ALGAN/GAN HEMTS USING STEPPER LITHOGRAPHY R. L OSSY , J. H ILSENBECK , J. WO RFL , AND H. O BLOH . 263-266 INFLUENCE OF PINHOLE TYPE DEFECTS IN ALGAN ON RF PERFORMANCE OF ALGAN/GAN HFETS GROWN BY MOCVD J ONG -W OOK K IM , J AE -S EUNG L EE , J IN -H O S HIN , J AE -H OON L EE , S UNG -H O H AHM , J UNG -H EE L EE , C HANG -S EOK K IM , J AE -E UNG O H , AND M OO -W HAN S HIN . 267-270 GROWTH AND CHARACTERISATION OF HIGH ELECTRON MOBILITY TRANSISTORS ON 4H-SIC BY AMMONIA MOLECULAR BEAM EPITAXY J. W EBB , H AIPENG T ANG , J.A. B ARDWELL , S. R OLFE , Y ING L IU , J. L APOINTE , P. M ARSHALL , AND T.W. M AC E LWEE . 271-274 HIGH TEMPERATURE RF CHARACTERISATION OF SIN PASSIVATED AND UNPASSIVATED ALGAN/GAN HFETS I. H ARRISON , N.W. C LAYTON , AND N.J. J EFFS . 275-278 THE EFFECT OF SURFACE PASSIVATION AND ILLUMINATION ON THE DEVICE PROPERTIES OF ALGAN/GAN HFETS B.J. A NSELL , I. H ARRISON , AND C.T. F OXON . 279-282 PHOTODIODES AND DETECTORS HIGH QUANTUM EFFICIENCY AT LOW BIAS AL R GA\|_ X N P-I-N PHOTODIODES (INVITED) J.C. C AMPBELL , C.J. C OLLINS , M.M. W ONG , U. C HOWDHURY , A.L. B ECK , AND R.D. D UPUIS . 283-287 ALGAN UV FOCAL PLANE ARRAYS P. L AMARRE , A. H AIRSTON , S.P. T OBIN , K.K. W ONG , A.K. S OOD , M.B. R EINE , M. P OPHRISTIC , R. B IRKHAM , LT. F ERGUSON , R. S INGH , C.R. E DDY , J R ., U. C HOWDHURY , M.M. W ONG , R.D. D UPUIS , P. K OZODOY , AND E.J. T ARSA . 289-292 DEMONSTRATION OF FLAME DETECTION IN ROOM LIGHT BACKGROUND BY SOLAR-BLIND ALGAN PIN PHOTODIODE A. H IRANO , C. P ERNOT , M. I WAYA , T. D ETCHPROHM , H. A MANO , AND I. A KASAKI . . 293 -296 SOLAR-BLIND P-GAN/I-ALGAN/N-ALGAN ULTRAVIOLET PHOTODIODES ON SIC SUBSTRATE G. P ARISH , M. H ANSEN , B. M ORAN , S. K ELLER , S.P. D EN B AARS , AND U.K. M ISHRA 297-300 GAN AND ALGAI^N P-I-N HIGH-VOLTAGE RECTIFIERS GROWN BY METALORGANIC CHEMI CAL VAPOR DEPOSITION T.G. Z HU , U. C HOWDHURY , M.M. W ONG , K.S. K IM , J.C. D ENYSZYN , AND R.D. D UPUIS . 301-305 EFFECT OF DIELECTRIC LAYERS ON THE PERFORMANCE OF ALGAN-BASED UV SCHOTTKY PHOTO DIODES E. M ONROY , F. C ALLE , J.L. P AU , E. M UNOZ , M. V ERDU , F.J. S ANCHEZ , M.T. M ONTOJO , F. O MNES , Z. B OUGRIOUA , I. M OERMAN , AND E. S AN A NDRES . . . 307-310 EFFECTS OF BAND TAIL ABSORPTION ON ALGAN-BASED ULTRAVIOLET PHOTODIODES J.J. K UEK , D.L. P ULFREY , B.D. N ENER , J.M. D ELL , G. P ARISH , AND U.K. M ISHRA . . 311-315 XII CONTENTS ALGAN-BASED PHOTODETECTORS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA V.V. K URYATKOV , G.D. K IPSHIDZE , S.A. N IKISHIN , P.W. D EELMAN , AND H. T EMKIN 317-320 RESONANT-CAVITY-ENHANCED UV METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS BASED ON ALGAN SYSTEM K. K ISHINO , M. Y ONEMARU , A. K IKUCHI , AND Y. T OYOURA . 321-324 HIGH PERFORMANCE SOLAR BLIND DETECTORS BASED ON ALGAN GROWN BY MBE ON SI J.-Y. D UBOZ , J.-L. R EVERCHON , D. A DAM , B. D AMILANO , F. S EMOND , N. G RANDJEAN , AND J. M ASSIES . 325-328 VISIBLE-BLIND METAL-SEMICONDUCTOR-METAL ULTRA-VIOLET DETECTORS BASED ON EPITAXI ALLY LATERALLY OVERGROWN GALLIUM NITRIDE W ENHUA G U , S OO J IN C HUA , X IN H AI Z HANG , M AO S HENG H AO , J I Z HANG , W EN W ANG , AND W EI L IU . 329-331 HIGH QUANTUM EFFICIENCY ALGAN/GAN SOLAR-BLIND PHOTODETECTORS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION M.M. W ONG , U. C HOWDHURY , C.J. C OLLINS , B. Y ANG , J.C. D ENYSZYN , K.S. K IM , J.C. C AMPBELL , AND R.D. D UPUIS . 333-336 CHARACTERIZATION OF GAN BASED UV-VUV DETECTORS IN THE RANGE 3.4-25 EV BY USING SYNCHROTRON RADIATION A. M OTOGAITO , K. O HTA , K. H IRAMATSU , Y. O HUCHI , K. T ADATOMO , Y. H AMAMURA , AND K. F UKUI . 337-340 SUPERIOR CHARACTERISTICS OF RUO2/GAN SCHOTTKY-TYPE UV PHOTODETECTOR S ANG -H OON S HIN , B YUNG -K WON J UNG , J AE -H OON L EE , M YOUNG -B OK L EE , J UNG -H EE L EE , Y ONG -H YUN L EE , AND S UNG -H O H AHM . 341-344 VERTICAL VERSUS LATERAL GAN SCHOTTKY ULTRAVIOLET DETECTORS AND THEIR GAIN MECHANISM O. K ATZ , V. G ARBER , B. M EYLER , G. B AHIR , AND J. S ALZMAN . 345-349 DEVICE PROCESSING ALN/GAN METAL INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR USING WET CHEMICAL ETCHING WITH HOT PHOSPHORIC ACID T. I DE , M. S HIMIZU , A. S UZUKI , X.-Q. S HEN , H. O KUMURA , AND T. N EMOTO . 351-354 MASS TRANSPORT REGROWTH OF GAN FOR OHMIC CONTACTS TO ALGAN/GAN S. H EIKMAN , S. K ELLER , B. M ORAN , R. C OFFIE , S.P. D EN B AARS , AND U.K. M ISHRA . 355-358 NOVEL POLARIZATION ENHANCED OHMIC CONTACTS TO N-TYPE GAN Y UN -L I L I , J.W. G RAFF , E.L. W ALDRON , T H . G ESSMANN , AND E.F. S CHUBERT . . . . 359-362 LOW RESISTANCE NON-ALLOY OHMIC CONTACT TO P-TYPE GAN USING MG-DOPED INGAN CONTACT LAYER K. K UMAKURA , T. M AKIMOTO , AND N. K OBAYASHI . 363-366 RELIABILITY OF SCHOTTKY CONTACTS ON ALGAN E. M ONROY , F. C ALLE , T. P ALACIOS , J. S ANCHEZ -O SORIO , M. V ERDU , F.J. S ANCHEZ , M.T. M OTOJO , F. O MNES , Z. B OUGRIOUA , I. M OERMAN , AND P. R UTERANA . 367-370 SURFACE PASSIVATION OF ALGAN/GAN HETEROSTRUCTURES USING AN ULTRATHIN AI2O3 LAYER S. O OTOMO , T. H ASHIZUME , AND H. H ASEGAWA . 371-374 CONTENTS XIII EFFECTS OF ANNEALING ON THE INTERFACE PROPERTIES BETWEEN NI AND P-GAN T. M ARUYAMA , Y. H AGIO , T. M IYAJIMA , S. K IJIMA , Y. N ANISHI , AND K. A KIMOTO . . 375-378 AU CATALYZED STRUCTURAL AND ELECTRICAL EVOLUTION OF NI/AU CONTACT TO GAN C.C. K IM , J.K. K IM , J.-L. L EE , J.H. J E , M.S. YI, D.Y. N OH , Y. H WU , AND P. R UTERANA . 379-382 NANOMETER-SCALE CONVERSION OF SI 4 N 4 TO SIO X FOR APPLICATIONS IN LITHOGRAPHY, MICROMACHINING, AND SELECTIVE-AREA CVD S. GWO, T.T. C HEN , T. Y ASUDA , AND S. Y AMASAKI . 383-387 EFFECT OF VARIOUS PRE-TREATMENTS ON TI/AL/TI/AU OHMIC CONTACTS FOR ALGAN/GAN HFET DEVICES J.A. B ARDWELL , Y ING L IU , S. R AUHALA , P. B OUWHUIS , P. M ARSHALL , H. T ANG , AND J.B. W EBB . 389-392 THE LINK BETWEEN GALLIUM VACANCIES AND PLASMA DAMAGE TO N-TYPE GAN H.W. C HOI AND S.J. C HUA . 393-397 SURFACE MODIFICATION AND OHMIC CONTACT FORMATION TO N AND P-TYPE GAN H.W. C HOI , S.J. C HUA , AND X.J. K ANG . 399-402 ALLOWABLE SUBSTRATE BIAS FOR THE ETCHING OF N-GAN IN PHOTO-ENHANCED ELECTROCHEMI CAL ETCHING J.W. S EO , C.S. O H , J.W. Y ANG , G.M. Y ANG , K.Y. K IM , C.J. Y OON , AND H.J. L EE . . 403-406 BULK NITRIDES AND HOMOEPITAXY THERMODYNAMIC ASSESSMENT OF THE GALLIUM-NITROGEN SYSTEM A.V. D AVYDOV , W.J. B OETTINGER , U.R. K ATTNER , AND T.J. A NDERSON . 407-410 CHARACTERIZATION OF 2.5 INCH DIAMETER BULK GAN GROWN FROM MELT-SOLUTION V. S OUKHOVEEV , V. I VANTSOV , Y U . M ELNIK , A. D AVYDOV , D. T SVETKOV , K. T SVETKOVA , I. N IKITINA , A. Z UBRILOV , A. L AVRENTIEV , AND V. D MITRIEV . 411-414 GROWTH OF ALJGAI-JN AND IN V GAI V N SINGLE CRYSTALS USING THE NA FLUX METHOD K. Y ASUI , G.K. K ISHOR , H. Y AMANE , AND T. A KAHANE . 415-419 GROWTH AND CHARACTERIZATION OF HIGH QUALITY CONTINUOUS GAN FILMS ON SI-DOPED CRACKED GAN TEMPLATES S.J. C HUA , M. H AO , J. Z HANG , AND E.K. S IA . 421-424 HYDRIDE VAPOR PHASE EPITAXY EFFECTS OF SUBSTRATE PRETREATMENT AND BUFFER LAYERS ON GAN EPILAYERS GROWN BY HYDRIDE VAPOR PHASE EPITAXY W. Z HANG , H.R. A LVES , J. B LAESING , T. R IEMANN , M. H EUKEN , P. V EIT , D. P FISTERER , R. G REGOR , D.M. H OFMANN , A. K ROST , J. C HRISTEN , AND B.K. M EYER 425-428 GROWTH OF SUBMICRON ALGAN/GAN/ALGAN HETEROSTRUCTURES BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) D. T SVETKOV , Y U . M ELNIK , A. D AVYDOV , A. S HAPIRO , O. K OVALENKOV , J.B. L AM , J.J. S ONG , AND V. D MITRIEV . 429-432 PROPERTIES OF SI-DOPED GAN LAYERS GROWN BY HVPE A.V. F OMIN , A.E. N IKOLAEV , I.P. N IKITINA , A.S. Z UBRILOV , M.G. M YNBAEVA , N.I. K UZNETSOV , A.P. K OVARSKY , B.J A . B ER , AND D.V. T SVETKOV . 433-437 XIV CONTENTS DIRECT GROWTH OF GAN ON (0001) SAPPHIRE BY LOW PRESSURE HYDRIDE VAPOUR PHASE EPITAXY E. R ICHTER , S. G RAMLICH , A. K LEIN , E. N EBAUER , I. R ECHENBERG , U. Z EIMER , AND M. W EYERS . 439-442 POLARITY INVERSION DURING HALIDE VPE GROWTH OF GAN ON GAAS(LLL)B-AS SURFACE AT HIGH TEMPERATURES F. H ASEGAWA , M. N AMERIKAWA , O. T AKAHASHI , AND R. S OUDA . 443-446 MASS TRANSPORT GROWTH AND PROPERTIES OF HYDRIDE VAPOUR PHASE EPITAXY GAN T. P ASKOVA , P.P. P ASKOV , E.M. G OLDYS , V. D ARAKCHIEVA , U. SO DERVALL , M. G ODLEWSKI , M. Z IELINSKI , E. V ALCHEVA , C.F. C ARLSTR O M , Q. W AHAB , AND B. M ONEMAR . 447-451 FLOW MODULATION GROWTH OF THICK GAN BY HYDRIDE VAPOR PHASE EPITAXY W. Z HANG , T. R IEMANN , H.R. A LVES , M. H EUKEN , P. V EIT , D. P FISTERER , D.M. H OFMANN , J. B LAESING , A. K ROST , J. C HRISTEN , AND B.K. M EYER . 453-456 DETECTION AND IDENTIFICATION OF DONORS IN HYDRIDE-VAPOR-PHASE EPITAXIAL GAN LAYERS J.A. F REITAS , J R ., G.C.B. B RAGA , W.J. M OORE , S.K. L EE , K.Y. L EE , I.J. S ONG , R.J. M OLNAR , AND P. V AN L IERDE . 457-461 CHARACTERIZATION OF ALN/SIC EPITAXIAL WAFERS FABRICATED BY HYDRIDE VAPOUR PHASE EPITAXY YU. M ELNIK , D. T SVETKOV , A. P ECHNIKOV , I. N IKITINA , N.I. K UZNETSOV , AND V. D MITRIEV . 463-466 THERMAL STABILITY OF MOCVD AND HVPE GAN LAYERS IN H 2 ,HC1, NH 3 AND N 2 M.A. M ASTRO , O.M. K RYLIOUK , M.D. R EED , T.J. A NDERSON , A. D AVYDOV , AND A. S HAPIRO . 467-471 INVESTIGATION OF OPTICAL AND STRUCTURAL PROPERTIES OF GAN GROWN BY HYDRIDE VAPOR PHASE EPITAXY V. K IRILYUK , P.R. H AGEMAN , P.C.M. C HRISTIANEN , W.H.M. C ORBEEK , M. Z IELINSKI , L. M ACHT , J.L. W EYHER , AND P.K. L ARSEN . 473-476 NEW GROWTH TECHNIQUES NEW IODIDE METHOD FOR GROWTH OF GAN M. S USCAVAGE , L. B OUTHILLETTE , D. B LISS , S HENG Q I W ANG , AND C HANGMO S UNG 477-480 OBSERVATION OF DARK SPOTS AND DARK LINES OF GAN MICROCRYSTALS GROWN BY NITRIDATION OF GALLIUM SULFIDE H. K ANIE , K. S UGIMOTO , AND H. O KADO . 481-484 GAN GROWTH ON NOVEL LATTICE-MATCHING SUBSTRATE: TILTED M-PLANE SAPPHIRE T. M ATSUOKA AND E. H AGIWARA . 485-489 RECENT ADVANCES IN III-NITRIDE DEVICES GROWN ON LITHIUM GALLATE W.A. D OOLITTLE , A.S. B ROWN , S. K ANG , S.W. S EO , S. H UANG , AND N.M. J OKERST 491-495 CRYSTAL GROWTH OF GAN ON (MN,ZN)FE 2 O4 SUBSTRATES J. O HTA , H. F UJIOKA , H. T AKAHASHI , AND M. O SHIMA . 497-500 GROWTH OF NITRIDES ON SILICON SUBSTRATES MOLECULAR BEAM EPITAXY OF GROUP-ILL NITRIDES ON SILICON SUBSTRATES: GROWTH, PROPERTIES AND DEVICE APPLICATIONS (INVITED) F. S EMOND , Y. C ORDIER , N. G RANDJEAN , F. N ATALI , D. D AMILANO , S. V EZIAN , AND J. M ASSIES . 501-510 CONTENTS XV MICRO-RAMAN STUDY OF WURTZITE AIN LAYERS GROWN ON SI(LLL) J. G LEIZE , F. D EMANGEOT , J. F RANDON , M.A. R ENUCCI , M. K UBALL , F. S EMOND , AND J. M ASSIES . 511-514 INVESTIGATION OF DIFFERENT SI(LLL) SURFACE PREPARATION METHODS FOR THE HETEROEPITAXY OF GAN BY PLASMA-ASSISTED MBE M. A NDROULIDAKI , A. G EORGAKILAS , F. P EIRO , K. A MIMER , M. Z ERVOS , K. T SAGARAKI , M. D IMAKIS , AND A. C ORNET . 515-518 POTENTIALITIES OF GAN-BASED MICROCAVITIES GROWN ON SILICON SUBSTRATES N. A NTOINE -V INCENT , F. N ATALI , F. S EMOND , M. L EROUX , N. G RANDJEAN , J. M ASSIES , J. L EYMARIE , AND A. V ASSON . 519-522 HIGH QUALITY GAN LAYERS ON SI(LLL) SUBSTRATES: AIN BUFFER LAYER OPTIMISATION AND INSERTION OF A SIN INTERMEDIATE LAYER P.R. H AGEMAN , S. H AFFOUZ , V. K IRILYUK , A. G RZEGORCZYK , AND P.K. L ARSEN . . . 523-526 GROWTH AND CHARACTERIZATION OF GAN EPILAYERS ON CHEMICALLY ETCHED SURFACE OF 3C-SIC INTERMEDIATE LAYERGROWN ON SI(LLL) SUBSTRATE J.H. K ANG , M.K. K WON , J.I. R HO , J.W. Y ANG , K.Y. L IM , AND K.S. N AHM . 527-530 CRACK-FREE THICK GAN LAYERS ON SILICON (111) BY METALORGANIC VAPOR PHASE EPITAXY E. F ELTIN , B. B EAUMONT , M. L A U GT , P. DE M IERRY , P. V ENNEGUES , M. L EROUX , AND P. G IBART . 531-535 ACOUSTICAL AND OPTICAL GALLIUM NITRIDE WAVEGUIDES GROWN ON SI(LLL) BY METALOR GANIC VAPOR PHASE EPITAXY H.P.D. S CHENK , E. F ELTIN , M. V AILLE , P. G IBART , R. K UNZE , H. S CHMIDT , M. W EIHNACHT , AND E. D OGHECHE . 537-541 GROWTH OF NITRIDES ON GAAS SUBSTRATES GROWTH MECHANISM OF HEXAGONAL GAN ON ALAS-PREGROWN GAAS(OOL) AND {LLN} SUBSTRATES M. F UNATO , S Z . F UJITA , S. Y AMAMOTO , K. K AISEI , K. S HIMOGAMI , AND S G . F UJITA 543-547 COMPARISON OF GAN BUFFER LAYERS GROWN ON GAAS (LLL)A AND (LLL)B SURFACES Y. K UMAGAI , H. M URAKAMI , H. S EKI , AND A. K OUKITU . 549-552 AB INITIO CALCULATIONS OF GAN INITIAL GROWTH PROCESSES ON GAAS(LLL)A AND GAAS(LLL)B SURFACES Y. M ATSUO , Y. K UMAGAI , T. I RISAWA , AND A. K OUKITU . 553-556 TRANSMISSION ELECTRON MICROSCOPE ANALYSIS OF MICROSTRUCTURES IN GAN GROWN ON (LLL)A AND (LLL)B OF GAAS BY METALORGANIC HYDROGEN CHLORIDE VAPOR-PHASE EPITAXY K. O KI , N. K UWANO , T. M ITATE , Y. S ONODA , Y. K UMAGAI , H. M URAKAMI , AND A. K OUKITU . 557-560 THE CHEMISTRY OF SAPPHIRE NITRIDATION IN RELATION TO THE GAN STRUCTURAL QUALITY: WHY LOW TEMPERATURE 200 C NITRIDATION? M. L OSURDO , P. C APEZZUTO , G. B RUNO , G. N AMKOONG , W.A. D OOLITTLE , AND A.S. B ROWN . 561-565 GROWTH BY MOLECULAR BEAM EPITAXY EFFECTS OF THE SAPPHIRE NITRIDATION ON THE POLARITY AND STRUCTURAL PROPERTIES OF GAN LAYERS GROWN BY PLASMA-ASSISTED MBE A. G EORGAKILAS , S. M IKROULIS , V. C IMALLA , M Z ERVOS , A. K OSTOPOULOS , P H . K OMNINOU , T H . K EHAGIAS , AND T H . K ARAKOSTAS . 567-570 XVI CONTENTS POLARITY OF GAN GROWN ON SAPPHIRE BY MOLECULAR BEAM EPITAXY WITH DIFFERENT BUFFER LAYERS D. H UANG , P. V ISCONTI , M.A. R ESHCHIKOV , F. Y UN , T. K ING , A.A. B ASKI , C.W. L ITTON , J. J ASINSKI , Z. L ILIENTAL -W EBER , AND H. M ORKO ^ . 571-574 MOLECULAR-BEAM EPITAXY OF GAN: A PHASE DIAGRAM C. A DELMANN , J. B RAULT , E. M ARTINEZ -G UERRERO , G. M ULA , H. M ARIETTE , L E S I D ANG , AND B. D AUDIN . 575-578 FIRST-PRINCIPLE THEORETICAL STUDY ON EPITAXIAL CRYSTAL GROWTH OF GAN S. M URATA , M. I KENAGA , K. N AKAMURA , A. T ACHIBANA , AND K. M ATSUMOTO . . . 579-582 SUPPRESSION OF SPIRAL GROWTH IN MOLECULAR BEAM EPITAXY OF GAN ON VICINAL 6H-SIC(0001) Y. CUI AND L. LI . 583-586 GAN GROWTH BY COMPOUND SOURCE MBE USING GAN POWDER T. H ONDA , K. S ATO , T. H ASHIMOTO , M. S HINOHARA , AND H. K AWANISHI . 587-590 NEAR BANDEDGE CATHODOLUMINESCENCE STUDIES OF AIN FILMS: DEPENDENCE ON MBE GROWTH CONDITIONS Y. S HISHKIN , R.P. D EVATY , W.J. C HOYKE , F. Y UN , T. K ING , AND H. M ORKO ? . . . 591-594 GROWTH OF GAN ON SIC(OOOL) BY MOLECULAR BEAM EPITAXY C.D. L EE , A SHUTOSH S AGAR , R.M. F EENSTRA , W.L. S ARNEY , L. S ALAMANCA -R IBA , AND J.W.P. HSU . 595-599 STRONG PHOTOLUMINESCENCE EMISSION FROM POLYCRYSTALLINE GAN GROWN ON METAL SUB STRATE BY NH 3 SOURCE MBE H. A SAHI , H. T AMPO , K. Y AMADA , K. O HNISHI , Y. I MANISHI , AND K. A SAMI . 601-604 AMMONIA SOURCE MBE GROWTH OF POLYCRYSTALLINE GAN P-N JUNCTION H. T AMPO , K. Y AMADA , K. O HNISHI , Y. I MANISHI , K. A SAMI , AND H. A SAHI . 605-609 SURFACE SEGREGATION IN GROUP-ILL NITRIDE MBE S.YU. K ARPOV AND YU.N. M AKAROV . 611-614 OPTICAL CONTROL OF GROUP-ILL AND N FLUX INTENSITIES IN PLASMA-ASSISTED MBE WITH RF CAPACITIVELY-COUPLED MAGNETRON NITROGEN ACTIVATOR V.N. J MERIK , V.A. V EKSHIN , V.Y U . D AVYDOV , V.V. R ATNIKOV , M.G. T KACHMAN , T.V. S HUBINA , AND S.V. I VANOV . 615-619 GROWTH BY METALORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF GAN LAYERS BY ONE-, TWO AND THREE-FLOW METALORGANIC VAPOR PHASE EPITAXY K. O HKAWA , A. H IRAKO , AND M. Y OSHITANI . 621-624 A NEW THREE-STEP METHOD FOR HIGH QUALITY MOVPE GROWTH OF ILL-NITRIDES ON SAP PHIRE A. Y OSHIKAWA AND K. T AKAHASHI . 625-628 AN OXYGEN DOPED NUCLEATION LAYER FOR THE GROWTH OF HIGH OPTICAL QUALITY GAN ON SAPPHIRE B. K UHN AND F. S CHOLZ . 629-633 GAS-PHASE AND SURFACE REACTIONS IN A HORIZONTAL REACTOR FOR GAN MOVPE GROWTH K. H ARAFUJI . 635-639 CONTENTS XVII THE INFLUENCE OF BUFFER LAYER GROWTH PARAMETERS ON THE MICROSTRUCTURE AND SURFACE MORPHOLOGY OF GAN ON SAPPHIRE SUBSTRATES CORRELATED WITH IN-SITU REFLECTIVITY D.A. W OOD , P.J. P ARBROOK , R.J. L YNCH , M. L ADA , AND A.G. C ULLIS . 641-645 THE INFLUENCE OF NUCLEATION PARAMETERS ON GAN BUFFER LAYER PROPERTIES USED FOR HEMT APPLICATION N. N ASTASE , H. H ARDTDEGEN , R. S CHMIDT , H. B AY , H. LLT H , A. A LAM , AND M. H EUKEN . 647-651 INFLUENCES OF INITIAL NITRIDATION PROCESS ON THE OPTICAL AND STRUCTURAL CHARACTERIZA TION OF GAN LAYER GROWN ON SAPPHIRE (0001) BY METALORGANIC CHEMICAL VAPOR DE POSITION X.L. S UN , H UI Y ANG , J.J. Z HU , Y.T. W ANG , Y. C HEN , G.H. L I , AND Z.G. W ANG 653-657 IMPROVEMENT OF THE OPTICAL AND STRUCTURAL PROPERTIES OF MOCVD GROWN GAN ON SAPPHIRE BY AN IN-SITU SIN TREATMENT PR. H AGEMAN , S. H AFFOUZ , V. K IRILYUK , L. M ACHT , J.L. W EYHER , A. G RZEGORCZYK , AND P.K. L ARSEN . 659-662 THE GROWTH OF GAN USING PLASMA ASSISTED METALORGANIC VAPOUR PHASE EPITAXY R.P. C AMPION , T. L I , C.T. F OXON , AND I. H ARRISON . 663-666 UV MODERATION OF NITRIDE FILMS DURING REMOTE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION K.S.A. B UTCHER , A FIFUDDIN , P.P.-T. C HEN , E.M. G OLDYS , AND T.L. T ANSLEY . . . 667-671 GROWTH OF CUBIC NITRIDE SEMICONDUCTORS ATOMIC LAYER EPITAXY OF HEXAGONAL AND CUBIC GAN NANOSTRUCTURES C. A DELMANN , E. M ARTINEZ -G UERRERO , J. B ARJON , J. B RAULT , L E S I D ANG , H. M ARIETTE , G. M ULA , AND B. D AUDIN . 673-676 STRUCTURAL CONTROL OF CUBIC AND HEXAGONAL GAN BY CHANGING THE ELECTRIC BIAS DURING ECR-MBE GROWTH T. A RAKI , T. M INAMI , M. K UIMA , AND Y. N ANISHI . 677-680 DEFECT STATES IN CUBIC GAN EPILAYER GROWN ON GAAS BY METALORGANIC VAPOR PHASE EPITAXY S.J. XU, C.T. O R , Q. L I , L.X. Z HENG , M.H. X IE , S.Y. T ONG , AND HUI Y ANG . 681-685 A NEW APPROACH TO THE GROWTH OF CUBIC GAN FILMS USING AN ALN/GAN ORDERED ALLOY AS A BUFFER LAYER R. K IMURA , J. S HIKE , A. S HIGEMORI , K. I SHIDA , AND K. T AKAHASHI . 687-689 SUPPRESSION OF HEXAGONAL GAN IN CUBIC GAN GROWTH BY IN SURFACTANT EFFECT COM BINED WITH THE PRECISE CONTROL OF V/III RATIO A. H ASHIMOTO , H. M ORI , Y. N ISHIO , T. L I , C.T. F OXON , AND A. Y AMAMOTO . 691-694 OPTICAL CHARACTERIZATION OF MBE GROWN ZINC-BLENDE ALGAN E. M ARTINEZ -G UERRERO , F. E NJALBERT , J. B ARJON , E. B ELLET -A LMARIC , B. D AUDIN , G. F ERRO , D. J ALABERT , L E S I D ANG , H. M ARIETTE , Y. M ONTEIL , AND G. M ULA 695-698 P-TYPE DOPING OF CUBIC GAN BY CARBON D.J. AS, U. KO HLER , M. L UBBERS , J. M IMKES , AND K. L ISCHKA . 699-703 OPTICAL PROPERTIES OF CUBIC INGAN/GAN MULTIPLE QUANTUM WELLS ON 3C-SIC SUB STRATES BY RADIO-FREQUENCY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY T. K ITAMURA , Y. S UZUKI , Y. I SHIDA , X.Q. S HEN , H. N AKANISHI , S.F. C HICHIBU , M. S HIMIZU , AND H. O KUMURA . 705-709 XVIII CONTENTS MODIFIED STRANSKI-KRASTANOV GROWTH IN STACKED LAYERS OF SELF-ASSEMBLED CUBIC GAN/ALN QUANTUM DOTS E. M ARTINEZ -G UERRERO , R. B ENEYTON , C. A DELMANN , B. D AUDIN , L E S I D ANG , G. M ULA , AND H. M ARIETTE . 711-714 SELECTIVE AND LATERAL EPITAXY SELECTIVE AREA GROWTH OF GAN ON SIC SUBSTRATE BY AMMONIA-SOURCE MBE H. T ANG , J.A. B ARDWELL , J.B. W EBB , S. R OLFE , S. M OISA , J. F RASER , S. R AYMOND , AND P. S IKORA . 715-718 SELECTIVE AREA GROWTH OF GAN AND FABRICATION OF GAN/ALGAN QUANTUM WELLS ON GROWN FACETS C. S ETIAGUNG , J. WU, J, O NABE , AND Y. S HIRAKI . 719-723 FABRICATION AND OPTICAL CHARACTERIZATION OF FACET-CONTROLLED ELO (FACELO) GAN BY LP-MOVPE H. M IYAKE , M. N ARUKAWA , K. H IRAMATSU , H. N AOI , Y. I YECHIKA , AND T. M AEDA 725-728 STRAIN AND DISLOCATION REDUCTION IN MASKLESS PENDEO-EPITAXY GAN THIN FILMS AM. R OSKOWSKI , P.Q. M IRAGLIA , E.A. P REBLE , S. E INFELDT , T. S TILES , R.F. D AVIS , J. S CHUCK , R. G ROBER , AND U. S CHWARZ . 729-732 EPITAXIAL LATERAL OVERGROWTH OF GAN ON SILICON (111) E. F ELTIN , B. B EAUMONT , P. V ENNEGUES , T. R IEMANN , J. C HRISTEN , J.P. F AURIE , AND P. G IBART . 733-737 FORMATION OF HORIZONTAL DISLOCATIONS IN EPITAXIALLY LATERAL OVERGROWN (ELO) GAN S. N ISHIMOTO , K. H ORIBUCHI , K. O KI , N. K UWANO , H. M IYAKE , AND K. H IRAMATSU 739-742 IN SITU AND EX SITU EVALUATION OF MECHANISMS OF LATERAL EPITAXIAL OVERGROWTH I.M. W ATSON , C. L IU , K.-S. K IM , H.-S. K IM , C.J. D EATCHER , J.M. G IRKIN , M.D. D AWSON , P.R. E DWARDS , C. T RAGER -C OWAN , AND R.W. M ARTIN . 743-746 STRESS AT THE COALESCENCE BOUNDARY OF EPITAXIAL LATERAL OVERGROWN GAN M. K UBALL , M. B ENYOUCEF , B. B EAUMONT , AND P. G IBART . 747-750 THREE-DIMENSIONAL IMAGING OF ELOG GROWTH DOMAINS BY SCANNING CATHODOLUMI NESCENCE TOMOGRAPHY T. R IEMANN , J. C HRISTEN , A. K ASCHNER , A. H OFFMANN , C. T HOMSEN , M. S EYBOTH , F. H ABEL , R. B ECCARD , AND M. H EUKEN . 751-755 GROWTH OF ALUMINUM NITRIDE INITIAL NUCLEATION STUDY AND NEW TECHNIQUE FOR SUBLIMATION GROWTH OF AIN ON SIC SUBSTRATE Y. S HI , B. L IU , L. L IU , J.H. E DGAR , H.M. M EYER III, E.A. P AYZANT , L.R. W ALKER , N.D. E VANS , J.G. S WADENER , J. C HAUDHURI , AND I OY C HAUDHURI . 757-762 EFFECT OF REACTIVE AMBIENT ON AIN SUBLIMATION GROWTH S.YU. K ARPOV , A.V. K ULIK , A.S. S EGAL , M.S. R AMM , AND YU.N. M AKAROV . . . . 763-767 CHARACTERIZATION OF ALUMINUM NITRIDE CRYSTALS GROWN BY SUBLIMATION L. LIU, D. Z HUANG , B. L IU , Y. S HI , J.H. E DGAR , S. R AJASINGAM , AND M. K UBALL 769-773 CONTENTS XIX INDIUM SURFACTANT ASSISTED GROWTH OF ALN/GAN HETEROSTRUCTURES BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION S. K ELLER , S. H EIKMAN , I. B EN - YAACOV , L. S HEN , S.P. D EN B AARS , AND U.K. M ISHRA . 775-778 SPONTANEOUS RIDGE FORMATION AND ITS EFFECT ON FIELD EMISSION OF HEAVILY SI-DOPED AIN M. K ASU AND N. K OBAYASHI . 779-782 GROWTH OF AIN ON ETCHED 6H-SIC(0001) SUBSTRATES VIA MOCVD W. H AGEMAN , Z. X IE , J. E DGAR , D. Z HUANG , S. J AGGANATHAN , K. B ARGHOUT , J. C HAUDHURI , A. R YS , AND J. S CHMITT . 783-787 ALGAN THIN FILMS DETERMINATION OF BAND-GAP BOWING FOR ALGA\|_ A N ALLOYS O. K ATZ , B. M EYLER , U. T ISCH , AND J. S ALZMAN . 789-792 MEASUREMENT OF AL X GAI_ X N REFRACTIVE INDICES G. W EBB -W OOD , U. O ZG U R , H.O. E VERITT , F. Y UN , AND H. M ORKOI ; . 793-797 GROWTH MECHANISM AND CHARACTERIZATION OF LOW-DISLOCATION-DENSITY ALGAN SINGLE CRYSTALS GROWN ON PERIODICALLY GROOVED SUBSTRATES T. D ETCHPROHM , S. S ANO , S. M OCHIZUKI , S. K AMIYAMA , H. A MANO , AND I. A KASAKI 799-802 SURFACE MORPHOLOGY OF AL V GA\|_ T N FILMS GROWN BY MOCVD L. G ENG , F.A. P ONCE , S. T ANAKA , H. O MIYA , AND Y. N AKAGAWA . 803-806 TIME-RESOLVED REFLECTIVITY STUDIES OF CARRIER DYNAMICS AS A FUNCTION OF AL CONTENT IN ALGAN ALLOYS M. W RABACK , F. S EMENDY , H. S HEN , U. C HOWDHURY , D.J.H. L AMBERT , M.M. W ONG , AND R.D. D UPUIS . 807-810 OBSERVATIONS OF SEGREGATION OF AL IN ALGAN ALLOYS L. C HANG , S.K. L AI , F.R. C HEN , AND J.J. K AI . 811-814 TEMPERATURE DEPENDENCE OF TRANSMISSION AND EMISSION SPECTRA IN MOCVD-GROWN ALGAN TERNARY ALLOYS Y ONG -H OON C HO , G.H. G AINER , J.B. L AM , J.J. S ONG , AND W. Y ANG . 815-819 DETERMINATION OF ALLOY COMPOSITION AND RESIDUAL STRESS FOR AL X GAI A N/GAN EPITAXIAL FILMS Q. P ADUANO , D. W EYBURNE , AND S.Q. W ANG . 821-824 ALGAN/GAN HETEROSTRUCTURES GROWTH AND CHARACTERIZATION OF GAN/ALGAN SUPERLATTICES FOR NEAR-INFRARED INTER SUBBAND TRANSITIONS (INVITED) H.M. N G , C. G MACHL , T. S IEGRIST , S.N.G. C HU , AND A.Y. C HO . 825-831 MAPPING THE INTERNAL POTENTIAL ACROSS GAN/ALGAN HETEROSTRUCTURES BY ELECTRON HOLOGRAPHY J. C AI , F.A. P ONCE , S. T ANAKA , H. O MIYA , AND Y. N AKAGAWA . 833-837 LARGE BUILT-IN ELECTRIC FIELD AND ITS INFLUENCE ON THE PRESSURE BEHAVIOR OF THE LIGHT EMISSION FROM GAN/ALGAN STRAINED QUANTUM WELLS P. P ERLIN , T. S USKI , S.P. L EPKOWSKI , H. T EISSEYRE , N. G RANDJEAN , AND J. M ASSIES 839-843 XX CONTENTS PHOTOCONDUCTIVITY STUDIES OF ALOISGAO82N/GAN SINGLE HETEROSTRUCTURE M. N IEHUS , R. S CHWARZ , S. K OYNOV , P. S ANGUINO , M. H EUKEN , AND B.K. M EYER 845-850 RECOMBINATION DYNAMICS IN GAN/ALGAN QUANTUM WELLS: THE ROLE OF BUILT-IN FIELDS D. A LDERIGHI , A. V INATTIERI , J. K UDRNA , M. C OLOCCI , A. R EALE , G. K OKOLAKIS , A. DI C ARLO , P. L UGLI , F. S EMOND , N. G RANDJEAN , AND J. M ASSIES . 851-855 EFFECT OF WELL THICKNESS ON GAN/ALGAN SEPARATE CONFINEMENT HETEROSTRUCTURE EMISSION G. G AINER , Y. K WON , J. L AM , S. B IDNYK , A. K ALASHYAN , J. S ONG , S. C HOI , AND G. Y ANG . 857-861 OPTIC AND ACOUSTIC PHONONS IN STRAINED HEXAGONAL GAN/ALGAN MULTILAYER STRUC TURES V.YU. D AVYDOV , A.A. K LOCHIKHIN , I.E. K OZIN , V.V. E MTSEV , I.N. G ONCHARUK , A.N. S MIRNOV , R.N. K YUTT , M.P. S CHEGLOV , A.V. S AKHAROV , W.V. L UNDIN , E.E. Z AVARIN , AND A.S. U SIKOV . 863-866 RESIDUAL DOPING EFFECTS ON THE AMPLITUDE OF POLARIZATION-INDUCED ELECTRIC FIELDS IN GAN/ALGAN QUANTUM WELLS J. S IMON , R. L ANGER , A. B ARSKI , M. Z ERVOS , AND N.T. P ELEKANOS . 867-870 OPTICAL CHARACTERISATION OF ALGAN EPITAXIAL LAYERS AND GAN-ALGAN QUANTUM WELLS S.T. P ENDLEBURY , P. L YNAM , D.J. M OWBRAY , P.J. P ARBROOK , D.A. W OOD , M. L ADA , J.P. O ' N EILL , A.G. C ULLIS , AND M.S. S KOLNICK . 871-875 STRUCTURE DEPENDENCE OF ELECTRON MOBILITY IN GAN/ALGAN MULTIPLE QUANTUM WELLS K. H OSHINO , T. S OMEYA , AND Y. A RAKAWA . 877-880 ALN/ALGAN BRAGG REFLECTORS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY G. K IPSHIDZE , V. K URYATKOV , K. C HOI , I U . G HERASOIU , B. B ORISOV , S. N IKISHIN , M. H OLTZ , D. T SVETKOV , V. D MITRIEV , AND H. T EMKIN . 881-884 GROWTH AND CHARACTERIZATION OF ALGAN/GAN SUPERLATTICES W.V. L UNDIN , A.V. S AKHAROV , A.F. T SATSULNIKOV , E.E. Z AVARIN , A.I. B ESULKIN , M.F. K OKOREV , R.N. K YUTT , V.Y U . D AVYDOV , V.V. T RETYAKOV , D.V. P AKHNIN , AND A.S. U SIKOV . 885-888 INFLUENCE OF DOPING PROFILES ON P-TYPE ALGAN/GAN SUPERLATTICES E. W ALDRON , J. G RAFF , AND E. S CHUBERT . 889-893 CRYSTAL GROWTH OF HIGH-QUALITY ALINN/GAN SUPERLATTICES AND OF CRACK-FREE AIN ON GAN: THEIR POSSIBILITY OF HIGH ELECTRON MOBILITY TRANSISTOR S. Y AMAGUCHI , M. K OSAKI , Y. W ATANABE , S. M OCHIZUKI , T. N AKAMURA , Y. Y UKAWA , S. N ITTA , H. A MANO , AND I. A KASAKI . 895-898 STUDY OF (AL,GA)N BRAGG MIRRORS GROWN ON AL 2 03(0002) AND SI(LLL) BY METALORGANIC VAPOR PHASE EPITAXY H.P.D. S CHENK , E. F ELTIN , P. V ENNEGUES , O. T OTTEREAU , M. L A U GT , M. V AILLE , B. B EAUMONT , P. DE M IERRY , P. G IBART , S. F ERNANDEZ , AND F. C ALLE . 899-903 AUTHOR INDEX . 905-916
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title_fullStr	Proceedings 1 ICNS 4 ; Fourth International Conference on Nitride Semiconductors, Denver, Colorado, USA, 2001 / Fernando A. Ponce ; Abigail Bell (eds.)
title_full_unstemmed	Proceedings 1 ICNS 4 ; Fourth International Conference on Nitride Semiconductors, Denver, Colorado, USA, 2001 / Fernando A. Ponce ; Abigail Bell (eds.)
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