Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2002
|
| Schriftenreihe: | Selected topics of electronics and micromechatronics
3 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Zugl.: München, Techn. Univ., Diss., 2000 |
| Beschreibung: | 161 S. 21 cm |
| ISBN: | 3826597990 |
Internformat
MARC
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| 245 | 1 | 0 | |a Modeling and simulation of wide bandgap semiconductor devices |b 4H/6H-SiC |c Martin Lades |
| 264 | 1 | |a Aachen |b Shaker |c 2002 | |
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| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Silicon carbide |x Electric properties | |
| 650 | 4 | |a Simulation methods | |
| 650 | 4 | |a Wide gap semiconductors |x Mathematical models | |
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Datensatz im Suchindex
| _version_ | 1808045815160111104 |
|---|---|
| adam_text |
CONTENTS
ZUSAMMENFASSUNG
1
ABSTRACT
3
1
INTRODUCTION
5
1.1
WIDE
BANDGAP
SEMICONDUCTOR
MATERIALS
.
5
1.2
NUMERICAL
SIMULATION
OF
SIC
DEVICES
.
7
1.3
SCOPE
OF
THIS
WORK
.
8
2
ELECTROTHERMAL
TRANSPORT
MODEL
11
2.1
ELECTROTHERMAL
TRANSPORT
THEORY
.
12
2.1.1
LOCAL
THERMAL
EQUILIBRIUM
AND
FUNDAMENTAL
GIBBS
RELATIONS
.
12
2.1.2
GIBBS-,
FERMI-,
AND
BOLTZMANN
DISTRIBUTIONS
.
14
2.1.2.1
FREE CARRIER
DENSITIES
.
15
2.1.2.2
IMPURITIES
.
16
2.1.3
BALANCE
EQUATIONS
AND
CONSTITUTIVE
CURRENT
RELATIONS
.
17
2.2
CARRIER
EMISSION
AND
CAPTURE
KINETICS
.
18
2.2.1
QUASI-STATIC
APPROXIMATION
.
19
2.2.2
CARRIER
EMISSION
AND
CAPTURE
COEFFICIENTS
.
20
2.2.3
CLASSIFICATION
OF
IMPURITIES
.
21
2.2.3.1
GENERATION-RECOMBINATION
CENTERS
.
21
2.2.3.2
DOPANTS
AND
DEEP
TRAPS
.
22
2.3
GENERIC
MODEL
FOR
ANISOTROPIC
MATERIAL
PROPERTIES
.
23
2.4
EXTENDED
ELECTROTHERMAL
DRIFT-DIFFUSION
MODEL
.
25
2.5
BOUNDARY
CONDITIONS
.
27
N
CONTENTS
3
MODELING
OF
4H/6H-SIC
MATERIAL
PROPERTIES
29
3.1
GENERAL
MATERIAL
CHARACTERISTICS
AND
PROCESS
TECHNOLOGY
.
29
3.2
EFFECTIVE
DENSITY
OF
STATES
AND
INTRINSIC
CARRIER
DENSITY
.
31
3.3
DIELECTRIC
CONSTANT
.
35
3.4
FREE
CARRIER
MOBILITIES
.
35
3.4.1
ACOUSTIC-PHONON
AND
IONIZED-IMPURITY
SCATTERING
.
36
3.4.2
CARRIER-CARRIER
AND
SURFACE
SCATTERING
.
37
3.4.3
HIGH-FIELD
DRIFT
VELOCITY
SATURATION
.
38
3.5
THERMAL
PROPERTIES
.
39
3.6
CARRIER
GENERATION
AND
RECOMBINATION
.
41
3.6.1
GENERALIZED
FIELD-DEPENDENT
SHOCKLEY-READ-HALL
STATISTICS
.
41
3.6.2
AUGER
RECOMBINATION
.
43
3.6.3
IMPACT
IONIZATION
.
43
4
INCOMPLETE
IONIZATION
OF
DOPANTS
45
4.1
ELECTROTHERMAL
EQUILIBRIUM
.
46
4.2
MEASUREMENT
OF
IONIZATION
TIME
CONSTANTS
.
50
4.2.1
THERMAL
ADMITTANCE
SPECTROSCOPY
(TAS)
.
52
4.2.2
SIMULATION
OF
TAS:
SERIAL
RESISTANCES
AND
DOPING
PROFILES
.
53
4.2.2.1
SIMULATION
OF
TAS
SPECTRA
.
55
4.2.2.2
EVALUATION
OF
"
FREEZE-OUT
SIGNAL
"
.
57
4.2.2.3
CONCEPT
OF
TAS
APPLIED
TO
THE
HIGHLY-DOPED
PART
OF
A
PN-JUNCTION
.
.
58
4.2.2.4
EVALUATION
OF
TAS
SIGNALS
ARISING
FROM
THE
HIGHLY-DOPED
PART
OF
A
PN-JUNCTION
.
60
4.2.2.5
INFLUENCE
OF
DOPING
PROFILE
.
63
4.2.3
DEEP
LEVEL
TRANSIENT
SPECTROSCOPY
(DLTS)
.
64
4.2.3.1
BASIC
THEORY
.
65
4.2.3.2
INFLUENCE
OF
SERIAL
RESISTANCE
.
67
4.2.3.3
DLTS
AT
THE
HIGHLY-DOPED
PART
OF
A
PN-JUNCTION
.
69
4.3
IONIZATION
ENERGY
AND
CAPTURE
CROSS
SECTIONS
.
69
CONTENTS
M
5
SIMULATION
OF
4H/6H-S1C
DEVICES
71
5.1
THE
PN-JUNCTION
-
EVALUATION
OF
MATERIAL
PARAMETERS
AND
MODELS
.
71
5.1.1
BASIC
CONSIDERATIONS
.
73
5.1.1.1
STATISTICAL
LIMIT
.
74
5.1.1.2
VALIDITY
OF
THE
QUASI-STATIC
APPROXIMATION
.
75
5.1.1.3
NUMERICAL
INSTABILITIES
.
76
5.1.2
FORWARD
CHARACTERISTICS
.
77
5.1.2.1
INFLUENCE
OF
SURFACE
RECOMBINATION
.
77
5.1.2.2
TEMPERATURE
DEPENDENCE
OF
SRH
LIFETIMES
.
78
5.1.2.3
FIELD-DEPENDENT
SRH
LIFETIMES
.
80
5.1.2.4
IV
CHARACTERISTICS
AT
HIGH
CURRENT
RATINGS
.
81
5.1.2.5
DISCUSSION
OF
MATERIAL
PARAMETERS
.
81
5.1.2.6
SUMMARY
.
83
5.1.3
REVERSE
CHARACTERISTICS
.
83
5.1.3.1
TEMPERATURE
ACTIVATION
OF
REVERSE
CURRENT
.
84
5.1.3.2
COUPLED
DEFECT-LEVEL
GENERATION
CURRENT
.
85
5.2
THE
JFET
-
CONCEPT
OF
INVERSE
MODELING
.
87
5.2.1
CHARACTERIZATION
OF
IMPLANTED-GATE
6H-SIC
JFET
.
87
5.2.1.1
BASIC
CHARACTERISTICS
.
88
5.2.1.2
INHOMOGENEOUS
CHANNEL
PROPERTIES
.
91
5.2.1.3
TEMPERATURE
DEPENDENCE
OF
CHANNEL
PROPERTIES
.
94
5.2.2
EXTRACTION
OF
CHANNEL
LENGTH
OF
BURIED-GATE
6H-SIC
JFET
.
95
5.3
IMPACT
OF
ANISOTROPIC
MATERIAL
PROPERTIES
ON
DEVICE
CHARACTERISTICS
.
97
5.3.1
PLANAR
6H-SIC
PN-DIODE
CHARACTERISTICS
.
98
5.3.2
UMOS
AND
LATERAL
JFET
CHARACTERISTICS
.
100
5.3.3
DIMOS
CHARACTERISTICS
.
101
5.3.4
VERTICAL
HIGH-POWER
JFET
CHARACTERISTICS
.
104
5.3.5
SUMMARY
.
104
5.4
DYNAMICS
OF
INCOMPLETE
IONIZATION
OF
DOPANTS
.
106
5.4.1
PN-JUNCTION
CHARACTERISTICS
.
107
5.4.2
DYNAMIC
PUNCH-THROUGH
.
109
5.4.3
IMPACT
IONIZATION
AND
DYNAMIC
IONIZATION
.
114
5.4.3.1
NON-PUNCH-THROUGH
DIODE
DESIGN
.
115
IV
CONTENTS
5.43.2
PUNCH-THROUGH
DIODE
DESIGN
.
116
5.4.3.3
INHOMOGENEOUS
COMPENSATION
PROFILE
.
118
5.4.3.4
SUMMARY
.
119
6
CONCLUSIONS
123
6.1
INCOMPLETE
IONIZATION
OF
DOPANTS
.
123
6.2
IONIZATION
TIME
CONSTANTS
MEASURED
BY
DLTS
AND
THERMAL
ADMITTANCE
SPECTROSCOPY
.
.
124
6.3
ANISOTROPIC
MATERIAL
PROPERTIES
.
125
6.4
INVESTIGATIONS
ON
PN-DIODE
AND
JEET
CHARACTERISTICS
.
125
6.5
SUMMARY
AND
OUTLOOK
.
126
A
MATERIAL
PARAMETERS
FOR
4H
AND
6H-SIC
129
B
NUMERICAL
METHODS
131
B.L
DISCRETIZATION
.
131
B.2
CALCULATION
OF
JUNCTION
ADMITTANCE
.
132
C
GENERATION-RECOMBINATION
MODELS
135
D
ANALYTICAL
MODEL
OF
DUAL-GATE
JFET
CHARACTERISTICS
137
E
MAXIMUM
DYNAMIC
DEPLETION
REGION
WIDTH
141
F
LIST
OF
SYMBOLS
143
BIBLIOGRAPHY
147 |
| any_adam_object | 1 |
| author | Lades, Martin 1965- |
| author_GND | (DE-588)123074363 |
| author_facet | Lades, Martin 1965- |
| author_role | aut |
| author_sort | Lades, Martin 1965- |
| author_variant | m l ml |
| building | Verbundindex |
| bvnumber | BV014096180 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611.8.W53 |
| callnumber-search | QC611.8.W53 |
| callnumber-sort | QC 3611.8 W53 |
| callnumber-subject | QC - Physics |
| ctrlnum | (OCoLC)53240733 (DE-599)BVBBV014096180 |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV014096180 |
| illustrated | Not Illustrated |
| indexdate | 2024-08-22T00:34:14Z |
| institution | BVB |
| isbn | 3826597990 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009657237 |
| oclc_num | 53240733 |
| open_access_boolean | |
| owner | DE-703 DE-91 DE-BY-TUM |
| owner_facet | DE-703 DE-91 DE-BY-TUM |
| physical | 161 S. 21 cm |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| publisher | Shaker |
| record_format | marc |
| series | Selected topics of electronics and micromechatronics |
| series2 | Selected topics of electronics and micromechatronics |
| spelling | Lades, Martin 1965- Verfasser (DE-588)123074363 aut Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades Aachen Shaker 2002 161 S. 21 cm txt rdacontent n rdamedia nc rdacarrier Selected topics of electronics and micromechatronics 3 Zugl.: München, Techn. Univ., Diss., 2000 Mathematisches Modell Silicon carbide Electric properties Simulation methods Wide gap semiconductors Mathematical models Elektronischer Transport (DE-588)4210733-7 gnd rswk-swf Sperrschicht-FET (DE-588)4213138-8 gnd rswk-swf Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf pn-Übergang (DE-588)4174949-2 gnd rswk-swf Numerisches Verfahren (DE-588)4128130-5 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Wide-bandgap Halbleiter (DE-588)4273153-7 s Siliciumcarbid (DE-588)4055009-6 s Störstelle (DE-588)4193400-3 s Elektronischer Transport (DE-588)4210733-7 s pn-Übergang (DE-588)4174949-2 s Sperrschicht-FET (DE-588)4213138-8 s DE-604 Elektronisches Bauelement (DE-588)4014360-0 s Numerisches Verfahren (DE-588)4128130-5 s 1\p DE-604 Selected topics of electronics and micromechatronics 3 (DE-604)BV014231990 3 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009657237&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Lades, Martin 1965- Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Selected topics of electronics and micromechatronics Mathematisches Modell Silicon carbide Electric properties Simulation methods Wide gap semiconductors Mathematical models Elektronischer Transport (DE-588)4210733-7 gnd Sperrschicht-FET (DE-588)4213138-8 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd pn-Übergang (DE-588)4174949-2 gnd Numerisches Verfahren (DE-588)4128130-5 gnd Störstelle (DE-588)4193400-3 gnd Siliciumcarbid (DE-588)4055009-6 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| subject_GND | (DE-588)4210733-7 (DE-588)4213138-8 (DE-588)4014360-0 (DE-588)4174949-2 (DE-588)4128130-5 (DE-588)4193400-3 (DE-588)4055009-6 (DE-588)4273153-7 (DE-588)4113937-9 |
| title | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
| title_auth | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
| title_exact_search | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
| title_full | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
| title_fullStr | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
| title_full_unstemmed | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
| title_short | Modeling and simulation of wide bandgap semiconductor devices |
| title_sort | modeling and simulation of wide bandgap semiconductor devices 4h 6h sic |
| title_sub | 4H/6H-SiC |
| topic | Mathematisches Modell Silicon carbide Electric properties Simulation methods Wide gap semiconductors Mathematical models Elektronischer Transport (DE-588)4210733-7 gnd Sperrschicht-FET (DE-588)4213138-8 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd pn-Übergang (DE-588)4174949-2 gnd Numerisches Verfahren (DE-588)4128130-5 gnd Störstelle (DE-588)4193400-3 gnd Siliciumcarbid (DE-588)4055009-6 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| topic_facet | Mathematisches Modell Silicon carbide Electric properties Simulation methods Wide gap semiconductors Mathematical models Elektronischer Transport Sperrschicht-FET Elektronisches Bauelement pn-Übergang Numerisches Verfahren Störstelle Siliciumcarbid Wide-bandgap Halbleiter Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009657237&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV014231990 |
| work_keys_str_mv | AT ladesmartin modelingandsimulationofwidebandgapsemiconductordevices4h6hsic |