Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Düsseldorf
VDI-Verl.
2001
|
| Ausgabe: | Als Ms. gedr. |
| Schriftenreihe: | Fortschritt-Berichte VDI
Reihe 9, Elektrotechnik, Elektronik ; 346 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | X, 118 S. graph. Darst. |
| ISBN: | 3183346095 |
Internformat
MARC
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| 100 | 1 | |a Großmann, Michael |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications |c Michael Großmann |
| 250 | |a Als Ms. gedr. | ||
| 264 | 1 | |a Düsseldorf |b VDI-Verl. |c 2001 | |
| 300 | |a X, 118 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Fortschritt-Berichte VDI : Reihe 9, Elektrotechnik, Elektronik |v 346 | |
| 502 | |a Zugl.: Aachen, Techn. Hochsch., Diss., 2001 | ||
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| 650 | 0 | 7 | |a Lebensdauer |0 (DE-588)4034837-4 |2 gnd |9 rswk-swf |
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| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009621814&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-009621814 | |
Datensatz im Suchindex
| _version_ | 1808046074478198784 |
|---|---|
| adam_text |
V
CONTENTS
1
INTRODUCTION
1
1.1
MOTIVATION
.
1
1.2
STATE
OF
THE
ART
.
1
1.3
OBJECTIVES
.
2
2
FERROELECTRIC
MEMORIES
4
2.1
FERROELECTRIC
HYSTERESIS
.
4
2.2
THE
FERROELECTRIC
MEMORY
CELL
.
4
2.2.1
2T-2C
MEMORY
CELL
DESIGN
.
5
2.2.2
1T-1C
MEMORY
CELL
DESIGN
.
5
2.2.3
OPERATION
PRINCIPLE
OF
A
FERROELECTRIC
NON-VOLATILE
MEMORY
.
6
2.3
FAILURE
MECHANISMS
OF
THE
FERROELECTRIC
MEMORY
CELL
.
8
3
FERROELECTRIC
MATERIALS
AND
THEIR
PROPERTIES
10
3.1
CRYSTAL
STRUCTURE
.
10
3.1.1
LEAD
ZIRCONATE-TITANATE
(PZT)
.
10
3.1.2
STRONTIUM
BISMUTH
TANTALATE
(SBT)
.
12
3.2
DOMAIN
STRUCTURE
.
13
3.2.1
LEAD
ZIRCONATE-TITANATE
(PZT)
.
14
3.2.2
STRONTIUM
BISMUTH
TANTALATE
(SBT)
.
14
3.3
DIELECTRIC
AND
FERROELECTRIC
PROPERTIES
.
15
3.3.1
SMALL
SIGNAL
BEHAVIOR
.
15
3.3.2
LARGE
SIGNAL
BEHAVIOR
.
16
4
AGING
OF
THE
DIELECTRIC
AND
FERROELECTRIC
PROPERTIES
18
4.1
AGING
IN
FERROELECTRIC
SINGLE
CRYSTALS
AND
CERAMICS
.
18
4.1.1
LARGE
SIGNAL
AGING
(INTERNAL
BIAS)
.
19
4.1.2
SMALL
SIGNAL
AGING
.
24
4.2
AGING
IN
FERROELECTRIC
THIN
FILMS
(IMPRINT)
.
26
4.3
SUMMARY
OF
AGING
MODELS
.
28
VI
5
EXPERIMENTAL
29
5.1
SAMPLE
PREPARATION
.
29
5.1.1
PREPARATION
OF
PZT
FILMS
.
29
5.1.2
PREPARATION
OF
SBT
FILMS
.
31
5.2
MEASUREMENT
PROCEDURES
.
33
5.2.1
HYSTERESIS
MEASUREMENT
.
/
.
33
5.2.2
STATIC
HYSTERESIS
MEASUREMENT
.
34
5.2.3
IMPRINT
MEASUREMENT
.
36
5.2.4
ILLUMINATION
EXPERIMENTS
.
37
6
LIFETIME
EXTRAPOLATION
41
6.1
IMPRINT
FAILURE
MODES
.
41
6.1.1
READ
FAILURE
CRITERION
.
43
6.1.2
WRITE
FAILURE
CRITERION
.
43
6.2
IMPRINT
EXTRAPOLATION
TOOL
.
45
6.3
LIFETIME
ESTIMATION
OF
PZT
AND
SBT
CAPACITORS
.
48
7
RESULTS
AND
DISCUSSION
51
7.1
GENERAL
EFFECT
.
51
7.2
IMPRINT
IN
FERROELECTRIC
THIN
FILMS:
DISCUSSION
OF
EXISTING
MODELS
.
53
7.2.1
DOMAIN
WALL
RELATED
MODELS
.
53
7.2.2
DEFECT
DIPOLE
ALIGNMENT
.
55
7.2.3
GRAIN
BOUNDARY
MODEL
.
60
7.2.4
BULK
SCREENING
MODEL
.
60
7.3
IMPRINT
IN
FERROELECTRIC
THIN
FILMS:
INTERFACE
SCREENING
MODEL
.
62
7.3.1
ELECTRIC
FIELD
IN
THE
SURFACE
LAYER
.
63
7.3.2
EXPERIMENTAL
EVIDENCE
OF
THE
SURFACE
LAYER
.
65
7.3.3
POLARIZATION
AS
DRIVING
FORCE
.
67
7.4
SMALL
SIGNAL
AGING
IN
THIN
FILMS:
DISCUSSION
OF
EXISTING
MODELS
.
72
7.4.1
STRESS
RELATED
MODELS
.
72
7.4.2
DOMAIN
WALL
RELATED
MODELS
.
72
VII
7.4.3
BIAS
DEPENDENCE
OF
THE
DIELECTRIC
CONSTANT
.
74
7.4.4
INTERFACE
RELATED
DECREASE
OF
THE
DIELECTRIC
CONSTANT
.
76
7.4.5
SUMMARY
ON
SMALL
SIGNAL
AGING
IN
THIN
FILMS
.
78
7.5
DISCUSSION
OF
POTENTIAL
INTERFACE
SCREENING
MECHANISMS
.
78
7.5.1
CORRELATION
BETWEEN
TRAPPED
INTERFACE
CHARGES
A*/
AND
YY
78
7.5.2
MECHANISMS
OF
CHARGE
INJECTION
.
87
7.5.3
MECHANISMS
OF
CHARGE
SEPARATION
.
94
7.5.4
EXPERIMENTAL
RESULTS
IN
THE
LIGHT
OF
THE
INTERFACE
SCREENING
MODEL
97
8
CONCLUSIONS
106
8.1
SUMMARY
.
106
8.2
OUTLOOK
.
108
REFERENCES
109 |
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| author | Großmann, Michael |
| author_facet | Großmann, Michael |
| author_role | aut |
| author_sort | Großmann, Michael |
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| classification_rvk | UP 6300 |
| classification_tum | ELT 279d |
| ctrlnum | (OCoLC)49842465 (DE-599)BVBBV014049849 |
| discipline | Physik Elektrotechnik |
| edition | Als Ms. gedr. |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV014049849 |
| illustrated | Illustrated |
| indexdate | 2024-08-22T00:38:23Z |
| institution | BVB |
| isbn | 3183346095 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009621814 |
| oclc_num | 49842465 |
| open_access_boolean | |
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| owner_facet | DE-210 DE-703 DE-91 DE-BY-TUM DE-634 DE-83 |
| physical | X, 118 S. graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | VDI-Verl. |
| record_format | marc |
| series | Fortschritt-Berichte VDI |
| series2 | Fortschritt-Berichte VDI : Reihe 9, Elektrotechnik, Elektronik |
| spelling | Großmann, Michael Verfasser aut Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications Michael Großmann Als Ms. gedr. Düsseldorf VDI-Verl. 2001 X, 118 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Fortschritt-Berichte VDI : Reihe 9, Elektrotechnik, Elektronik 346 Zugl.: Aachen, Techn. Hochsch., Diss., 2001 RAM (DE-588)4176909-0 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Lebensdauer (DE-588)4034837-4 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content RAM (DE-588)4176909-0 s Ferroelektrikum (DE-588)4154121-2 s Dünne Schicht (DE-588)4136925-7 s Lebensdauer (DE-588)4034837-4 s DE-604 Fortschritt-Berichte VDI Reihe 9, Elektrotechnik, Elektronik ; 346 (DE-604)BV047505631 346 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009621814&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Großmann, Michael Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications Fortschritt-Berichte VDI RAM (DE-588)4176909-0 gnd Dünne Schicht (DE-588)4136925-7 gnd Lebensdauer (DE-588)4034837-4 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| subject_GND | (DE-588)4176909-0 (DE-588)4136925-7 (DE-588)4034837-4 (DE-588)4154121-2 (DE-588)4113937-9 |
| title | Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications |
| title_auth | Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications |
| title_exact_search | Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications |
| title_full | Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications Michael Großmann |
| title_fullStr | Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications Michael Großmann |
| title_full_unstemmed | Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications Michael Großmann |
| title_short | Imprint: an important failure mechanism of ferroelectric thin films in view of memory applications |
| title_sort | imprint an important failure mechanism of ferroelectric thin films in view of memory applications |
| topic | RAM (DE-588)4176909-0 gnd Dünne Schicht (DE-588)4136925-7 gnd Lebensdauer (DE-588)4034837-4 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| topic_facet | RAM Dünne Schicht Lebensdauer Ferroelektrikum Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009621814&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV047505631 |
| work_keys_str_mv | AT großmannmichael imprintanimportantfailuremechanismofferroelectricthinfilmsinviewofmemoryapplications |