Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Amsterdam [u.a.]
Elsevier
2001
|
| Series: | Surface science reports
43,5/8 |
| Subjects: | |
| Item Description: | Einzelaufnahme eines Zeitschr.-H. |
| Physical Description: | S. 127 - 254 graph. Darst. |
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| indexdate | 2024-07-09T18:55:28Z |
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| language | English |
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| physical | S. 127 - 254 graph. Darst. |
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| spelling | Voigtländer, Bert Verfasser aut Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth Bert Vogtländer Amsterdam [u.a.] Elsevier 2001 S. 127 - 254 graph. Darst. txt rdacontent n rdamedia nc rdacarrier Surface science reports 43,5/8 Einzelaufnahme eines Zeitschr.-H. Rastertunnelmikroskopie (DE-588)4252995-5 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Epitaxie (DE-588)4152545-0 s Rastertunnelmikroskopie (DE-588)4252995-5 s DE-604 |
| spellingShingle | Voigtländer, Bert Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth Rastertunnelmikroskopie (DE-588)4252995-5 gnd Epitaxie (DE-588)4152545-0 gnd |
| subject_GND | (DE-588)4252995-5 (DE-588)4152545-0 |
| title | Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth |
| title_auth | Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth |
| title_exact_search | Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth |
| title_full | Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth Bert Vogtländer |
| title_fullStr | Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth Bert Vogtländer |
| title_full_unstemmed | Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth Bert Vogtländer |
| title_short | Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth |
| title_sort | fundamental processes in si si and ge si epitaxy studied by scanning tunneling microscopy during growth |
| topic | Rastertunnelmikroskopie (DE-588)4252995-5 gnd Epitaxie (DE-588)4152545-0 gnd |
| topic_facet | Rastertunnelmikroskopie Epitaxie |
| work_keys_str_mv | AT voigtlanderbert fundamentalprocessesinsisiandgesiepitaxystudiedbyscanningtunnelingmicroscopyduringgrowth |