APA (7th ed.) Citation

Voigtländer, B. (2001). Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth. Elsevier.

Chicago Style (17th ed.) Citation

Voigtländer, Bert. Fundamental Processes in Si/Si and Ge/Si Epitaxy Studied by Scanning Tunneling Microscopy During Growth. Amsterdam [u.a.]: Elsevier, 2001.

MLA (9th ed.) Citation

Voigtländer, Bert. Fundamental Processes in Si/Si and Ge/Si Epitaxy Studied by Scanning Tunneling Microscopy During Growth. Elsevier, 2001.