Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | German |
Veröffentlicht: |
2000
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Schlagworte: | |
Online-Zugang: | http://mediatum.ub.tum.de/?id=601498 http://d-nb.info/962057827/34 |
Beschreibung: | München, Techn. Univ., Diss., 2000 |
Beschreibung: | 1 Online-Ressource |
Internformat
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Datensatz im Suchindex
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any_adam_object | |
author | Lades, Martin 1965- |
author_GND | (DE-588)123074363 |
author_facet | Lades, Martin 1965- |
author_role | aut |
author_sort | Lades, Martin 1965- |
author_variant | m l ml |
building | Verbundindex |
bvnumber | BV013939260 |
classification_tum | ELT 072d ELT 300d PHY 694d |
collection | ebook |
ctrlnum | (OCoLC)76251849 (DE-599)BVBBV013939260 |
discipline | Physik Elektrotechnik |
format | Electronic eBook |
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genre_facet | Hochschulschrift |
id | DE-604.BV013939260 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T18:54:46Z |
institution | BVB |
language | German |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009539106 |
oclc_num | 76251849 |
open_access_boolean | |
owner | DE-384 DE-473 DE-BY-UBG DE-703 DE-1051 DE-824 DE-29 DE-12 DE-91 DE-BY-TUM DE-19 DE-BY-UBM DE-1049 DE-92 DE-739 DE-355 DE-BY-UBR DE-20 |
owner_facet | DE-384 DE-473 DE-BY-UBG DE-703 DE-1051 DE-824 DE-29 DE-12 DE-91 DE-BY-TUM DE-19 DE-BY-UBM DE-1049 DE-92 DE-739 DE-355 DE-BY-UBR DE-20 |
physical | 1 Online-Ressource |
psigel | ebook |
publishDate | 2000 |
publishDateSearch | 2000 |
publishDateSort | 2000 |
record_format | marc |
spelling | Lades, Martin 1965- Verfasser (DE-588)123074363 aut Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades 2000 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier München, Techn. Univ., Diss., 2000 Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Sperrschicht-FET (DE-588)4213138-8 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Elektronischer Transport (DE-588)4210733-7 gnd rswk-swf Numerisches Verfahren (DE-588)4128130-5 gnd rswk-swf pn-Übergang (DE-588)4174949-2 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Elektronisches Bauelement (DE-588)4014360-0 s Numerisches Verfahren (DE-588)4128130-5 s DE-604 Wide-bandgap Halbleiter (DE-588)4273153-7 s Störstelle (DE-588)4193400-3 s Elektronischer Transport (DE-588)4210733-7 s pn-Übergang (DE-588)4174949-2 s Sperrschicht-FET (DE-588)4213138-8 s 1\p DE-604 ca. 4,2 MB http://mediatum.ub.tum.de/?id=601498 http://d-nb.info/962057827/34 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Lades, Martin 1965- Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Sperrschicht-FET (DE-588)4213138-8 gnd Siliciumcarbid (DE-588)4055009-6 gnd Elektronischer Transport (DE-588)4210733-7 gnd Numerisches Verfahren (DE-588)4128130-5 gnd pn-Übergang (DE-588)4174949-2 gnd Störstelle (DE-588)4193400-3 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd |
subject_GND | (DE-588)4273153-7 (DE-588)4213138-8 (DE-588)4055009-6 (DE-588)4210733-7 (DE-588)4128130-5 (DE-588)4174949-2 (DE-588)4193400-3 (DE-588)4014360-0 (DE-588)4113937-9 |
title | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
title_auth | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
title_exact_search | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
title_full | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
title_fullStr | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
title_full_unstemmed | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
title_short | Modeling and simulation of wide bandgap semiconductor devices |
title_sort | modeling and simulation of wide bandgap semiconductor devices 4h 6h sic |
title_sub | 4H/6H-SiC |
topic | Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Sperrschicht-FET (DE-588)4213138-8 gnd Siliciumcarbid (DE-588)4055009-6 gnd Elektronischer Transport (DE-588)4210733-7 gnd Numerisches Verfahren (DE-588)4128130-5 gnd pn-Übergang (DE-588)4174949-2 gnd Störstelle (DE-588)4193400-3 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd |
topic_facet | Wide-bandgap Halbleiter Sperrschicht-FET Siliciumcarbid Elektronischer Transport Numerisches Verfahren pn-Übergang Störstelle Elektronisches Bauelement Hochschulschrift |
url | http://mediatum.ub.tum.de/?id=601498 http://d-nb.info/962057827/34 |
work_keys_str_mv | AT ladesmartin modelingandsimulationofwidebandgapsemiconductordevices4h6hsic |