The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000: proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Pennington, NJ
Electrochemical Soc.
2000
|
| Schriftenreihe: | Proceedings / Electrochemical Society
2000,2 |
| Schlagworte: | |
| Beschreibung: | XIV, 539 S. graph. Darst. |
| ISBN: | 1566772672 |
Internformat
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| 245 | 1 | 0 | |a The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 |b proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 |c ed.: Hisham Z. Massoud ... |
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| indexdate | 2024-07-09T18:54:26Z |
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| isbn | 1566772672 |
| language | English |
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| physical | XIV, 539 S. graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
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| publisher | Electrochemical Soc. |
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| series2 | Proceedings / Electrochemical Society |
| spelling | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 ed.: Hisham Z. Massoud ... Pennington, NJ Electrochemical Soc. 2000 XIV, 539 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Proceedings / Electrochemical Society 2000,2 Chimie des surfaces ram Diélectriques - Surfaces ram Silice - Surfaces ram Surfaces (technologie) ram Dielectrics Surfaces Congresses Silica Surfaces Congresses Silicon dioxide films Congresses Surface chemistry Congresses Surfaces (Technology) Congresses Grenzflächenchemie (DE-588)4246080-3 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2000 Toronto gnd-content Silicium (DE-588)4077445-4 s Siliciumdioxid (DE-588)4077447-8 s Grenzflächenchemie (DE-588)4246080-3 s DE-604 Massoud, Hisham Z. Sonstige oth International Symposium on the Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface 4 2000 Toronto Sonstige (DE-588)6019125-9 oth Electrochemical Society Proceedings 2000,2 (DE-604)BV001900941 2000,2 |
| spellingShingle | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 Chimie des surfaces ram Diélectriques - Surfaces ram Silice - Surfaces ram Surfaces (technologie) ram Dielectrics Surfaces Congresses Silica Surfaces Congresses Silicon dioxide films Congresses Surface chemistry Congresses Surfaces (Technology) Congresses Grenzflächenchemie (DE-588)4246080-3 gnd Siliciumdioxid (DE-588)4077447-8 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4246080-3 (DE-588)4077447-8 (DE-588)4077445-4 (DE-588)1071861417 |
| title | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 |
| title_auth | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 |
| title_exact_search | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 |
| title_full | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 ed.: Hisham Z. Massoud ... |
| title_fullStr | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 ed.: Hisham Z. Massoud ... |
| title_full_unstemmed | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 ed.: Hisham Z. Massoud ... |
| title_short | The physics and chemistry of SiO 2 and the Si-SiO 2 interface - 4, 2000 |
| title_sort | the physics and chemistry of sio 2 and the si sio 2 interface 4 2000 proceedings of the fourth international symposium on the physics and chemistry of sio2 and the si sio2 interface toronto canada may 15 18 2000 |
| title_sub | proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-Sio2 Interface, Toronto, Canada, May 15 - 18, 2000 |
| topic | Chimie des surfaces ram Diélectriques - Surfaces ram Silice - Surfaces ram Surfaces (technologie) ram Dielectrics Surfaces Congresses Silica Surfaces Congresses Silicon dioxide films Congresses Surface chemistry Congresses Surfaces (Technology) Congresses Grenzflächenchemie (DE-588)4246080-3 gnd Siliciumdioxid (DE-588)4077447-8 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Chimie des surfaces Diélectriques - Surfaces Silice - Surfaces Surfaces (technologie) Dielectrics Surfaces Congresses Silica Surfaces Congresses Silicon dioxide films Congresses Surface chemistry Congresses Surfaces (Technology) Congresses Grenzflächenchemie Siliciumdioxid Silicium Konferenzschrift 2000 Toronto |
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