Schulze, N. (2001). Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals: Sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization. Shaker.
Chicago Style (17th ed.) CitationSchulze, Norbert. Near Thermal Equilibrium Growth of 4H-, 6H-, and 15R-silicon Carbide Single Crystals: Sublimation Growth of Bulk SiC by Modified Lely Method and the Structural, Electrical, and Optical Characterization. Aachen: Shaker, 2001.
MLA (9th ed.) CitationSchulze, Norbert. Near Thermal Equilibrium Growth of 4H-, 6H-, and 15R-silicon Carbide Single Crystals: Sublimation Growth of Bulk SiC by Modified Lely Method and the Structural, Electrical, and Optical Characterization. Shaker, 2001.
Warning: These citations may not always be 100% accurate.