Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals: sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English German |
| Veröffentlicht: |
Aachen
Shaker
2001
|
| Schriftenreihe: | Berichte aus der Halbleitertechnik
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Zugl.: Erlangen-Nürnberg, Univ., Diss., 2001. - Enth. Zsfassung in dt. Sprache |
| Beschreibung: | 121, XIV S. Ill., graph. Darst. : 21 cm |
| ISBN: | 3826592107 |
Internformat
MARC
| LEADER | 00000nam a22000008c 4500 | ||
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| 001 | BV013880238 | ||
| 003 | DE-604 | ||
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| 020 | |a 3826592107 |9 3-8265-9210-7 | ||
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| 084 | |a UQ 2160 |0 (DE-625)146487: |2 rvk | ||
| 100 | 1 | |a Schulze, Norbert |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals |b sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization |c Norbert Schulze |
| 264 | 1 | |a Aachen |b Shaker |c 2001 | |
| 300 | |a 121, XIV S. |b Ill., graph. Darst. : 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Berichte aus der Halbleitertechnik | |
| 500 | |a Zugl.: Erlangen-Nürnberg, Univ., Diss., 2001. - Enth. Zsfassung in dt. Sprache | ||
| 650 | 0 | 7 | |a Raman-Spektroskopie |0 (DE-588)4176916-8 |2 gnd |9 rswk-swf |
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| 650 | 0 | 7 | |a Einkristall |0 (DE-588)4013901-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Polytypie |0 (DE-588)4123966-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristallzüchtung |0 (DE-588)4140616-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-009496289 | |
Datensatz im Suchindex
| _version_ | 1816444365879377920 |
|---|---|
| adam_text |
CONTENTS
PREFACE
.
1
1
THE
SEMICONDUCTOR
SILICON
CARBIDE
.
5
1.1
CRYSTAL
STRUCTURE
.
5
1.2
MATERIAL
PARAMETERS
.
8
1.3
OVERVIEW
OF
CRYSTAL
GROWTH
TECHNIQUES
.
9
1.3.1
ORIGINAL
LELY
METHOD
10
1.3.2
MODIFIED
LELY
METHOD
10
1.3.3
CHEMICAL
VAPOR
DEPOSITION
(CVD)
12
1.3.4
LIQUID
PHASE
EPITAXY
(LPE)
13
2
BASIC
CONCEPTS
.
15
2.1
POLYTYPISM
.
15
2.1.1
OVERVIEW
OF
THEORETICAL
CONSIDERATIONS
15
2.1.2
THE
ROLE
OF
THE
SURFACE
16
2.2
GENERATION
OF
MICROPIPES
.
19
2.2.1
FRANK'S
MODEL
19
2.2.2
FORMING
MICROPIPES
19
2.3
CRYSTAL
GROWTH
BY
PHYSICAL
VAPOR
TRANSPORT
(PVT)
.
20
2.3.1
SUBLIMATION
OF
SOURCE
MATERIAL
21
2.3.2
VAPOR
PHASE
TRANSPORT
25
2.3.3
NUCLEATION
30
3
EXPERIMENTAL
.
33
3.1
SETUP
OF
THE
SUBLIMATION
GROWTH
FURNACE
.
33
3.1.1
HOT
ZONE:
CONVENTIONAL
SETUP
34
3.1.2
HOT
ZONE:
SETUP
FOR
ALUMINUM
DOPING
DURING
GROWTH
34
3.2
PREPARATION
OF
GROWTH
EXPERIMENTS
.
.
.
35
3.2.1
SEED
CRYSTALS
35
3.2.2
SOURCE
MATERIAL
36
3.3
NEAR-THERMAL-EQUILIBRIUM
PROCESS
.
37
4
CHARACTERIZATION
METHODS
.
39
4.1
STRUCTURAL
AND
OPTICAL
CHARACTERIZATION
.
39
4.1.1
DEFECT
DECORATION
BY
KOH
ETCHING
39
4.1.2
OPTICAL
MICROSCOPY
39
4.1.3
SECONDARY
ION
MASS
SPECTROSCOPY
(SIMS)
40
4.1.4
RAMAN
SPECTROSCOPY
41
4.1.5
LOW
TEMPERATURE
PHOTOLUMINESCENCE
(LTPL)
42
4.2
ELECTRICAL
CHARACTERIZATION
.
43
4.2.1
PREPARATION
OF
CONTACTS
43
4.2.2
CAPACITANCE-VOLTAGE
(C-V)
MEASUREMENTS
43
4.2.3
HALL
EFFECT
44
4.2.4
DEEP
LEVEL
TRANSIENT
SPECTROSCOPY
(DLTS)
47
43
POLYTYPE
IDENTIFICATION
.
49
4.3.1
RAMAN
SPECTROSCOPY
49
4.3.2
LTPL
MEASUREMENTS
49
5
EXPERIMENTAL
RESULTS
.
53
5.1
GROWTH
OF
BULK
SIC
CRYSTALS
.
53
5.1.1
GROWTH
UNDER
NEAR-THERMAL-EQUILIBRIUM
CONDITIONS
54
5.1.2
VARIATION
OF
SOURCE
STOICHIOMETRY
55
5.2
STRUCTURAL
PROPERTIES
.
58
5.2.1
MICROPIPE
DENSITY
60
5.2.2
MICROPROBE
RAMAN
PROFILING
ACROSS
POLYTYPE
INCLUSIONS
63
5.2.3
MICROPIPE-FREE
GROWTH
66
5.3
IMPURITY
INCORPORATION
AND
ELECTRICAL
PROPERTIES
OF
UNINTENTIONALLY
DOPED
N-TYPE
CRYSTALS
.
66
5.3.1
SIMS
ANALYSIS
66
5.3.2
HALL
EFFECT
ANALYSIS
68
5.3.3
CARTIER
CONCENTRATION
PROFILE
OBTAINED
BY
RAMAN
SPECTROSCOPY
78
5.3.4
LTPL
78
5.3.5
DLTS
81
5.4
IMPURITY
INCORPORATION
AND
ELECTRICAL
PROPERTIES
OF
ALUMINUM
DOPED
CRYSTALS
.
81
5.4.1
SIMS
ANALYSIS
82
5.4.2
C-V
CHARACTERIZATION
84
5.4.3
HALL
EFFECT
ANALYSIS
84
5.5
INCORPORATION
OF
CARBON
ISOTOPE
U
C
.
89
5.5.1
SIMS
ANALYSIS
OF
13
C
INCORPORATION
90
5.5.2
RAMAN
ANALYSIS
OF
,3
C
INCORPORATION
91
6
DISCUSSION
.
93
6.1
MASS
TRANSPORT
AT
NEAT-THERMAL-EQUILIBRIUM
CONDITIONS
.
93
6.1.1
INFLUENCE
OF
SI-CONTENT
ON
TRANSPORT
96
6.1.2
13
C
PROFILES
96
6.2
GROWTH
OF
4H-,
6H-,
AND
15R-SIC
SINGLE
CRYSTALS
.
97
6.2.1
VAPOR
COMPOSITION
97
6.3
EXTENDED
DEFECTS
.
99
6.3.1
DEFECT
FORMATION
AT
THE
INTERFACE
GRAPHITE
LID/SEED
CRYSTAL
99
6.3.2
DEFECT
FORMATION
AT
THE
SEED
CRYSTAL
SURFACE
100
6.3.3
INFLUENCE
OF
THE
RADIAL
THERMAL
GRADIENT
ON
DEFECT
FORMATION
100
6.3.4
STRESS
AT
POLYTYPE
TRANSITIONS
101
6.3.5
PRECIPITATES
102
6.4
INTRINSIC
DEFECT
CENTERS
IN
AS-GROWN
15R-SIC
CRYSTALS
.
103
6.5
IMPURITY
INCORPORATION
.
104
6.5.1
CRITICAL
TOPICS
IN
THE
EVALUATION
OF
THE
HALL
EFFECT
104
6.5.2
DEPENDENCE
OF
IMPURITY
INCORPORATION
ON
SEED
FACE
POLARITY
107
6.5.3
DISTRIBUTION
OF
IMPURITIES
108
6.5.4
ELECTRON
HALL
MOBILITY
110
6.6
THE
HALL
SCATTERING
FACTOR
FOR
HOLES
IN
SIC
.
113
6.6.1
EVALUATION
OF
THE
HALL
SCATTERING
FACTOR
113
6.6.2
HALL
EFFECT
ANALYSIS
OF
6H-SIC
BY
CONSIDERING
TWO
DIFFERENT
ACCEPTOR
LEVELS
116
SUMMARY
.
119
OUTLOOK
.
121
APPENDIX
.
I
A
GROWTH
PARAMETERS
.
I
B
CRYSTALLOGRAPHIC
NOTATION
.
II
C
TECHNICAL
DATA
OF
MATERIAL
USED
.
ILL
GRAPHITE
III
SOURCE
MATERIAL
III
D
SYMBOLS
AND
CONSTANTS
.
IV
LATIN
SYMBOLS
IV
GREEK
SYMBOLS
VI
E
REFERENCES
.
VII
SUPPLEMENT
.
XIII
F
DETERMINATION
OF
U
C
CONTENT
IN
SIC
SINGLE
CRYSTALS
BY
RAMAN
SPECTROSCOPY
.
XIII |
| any_adam_object | 1 |
| author | Schulze, Norbert |
| author_facet | Schulze, Norbert |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV013880238 |
| illustrated | Illustrated |
| indexdate | 2024-11-22T17:25:38Z |
| institution | BVB |
| isbn | 3826592107 |
| language | English German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009496289 |
| oclc_num | 50293576 |
| open_access_boolean | |
| owner | DE-703 DE-29 DE-29T |
| owner_facet | DE-703 DE-29 DE-29T |
| physical | 121, XIV S. Ill., graph. Darst. : 21 cm |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Shaker |
| record_format | marc |
| series2 | Berichte aus der Halbleitertechnik |
| spelling | Schulze, Norbert Verfasser aut Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization Norbert Schulze Aachen Shaker 2001 121, XIV S. Ill., graph. Darst. : 21 cm txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Zugl.: Erlangen-Nürnberg, Univ., Diss., 2001. - Enth. Zsfassung in dt. Sprache Raman-Spektroskopie (DE-588)4176916-8 gnd rswk-swf Hall-Effekt (DE-588)4023028-4 gnd rswk-swf Einkristall (DE-588)4013901-3 gnd rswk-swf Polytypie (DE-588)4123966-0 gnd rswk-swf Kristallzüchtung (DE-588)4140616-3 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Polytypie (DE-588)4123966-0 s Einkristall (DE-588)4013901-3 s Kristallzüchtung (DE-588)4140616-3 s Hall-Effekt (DE-588)4023028-4 s Raman-Spektroskopie (DE-588)4176916-8 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009496289&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Schulze, Norbert Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization Raman-Spektroskopie (DE-588)4176916-8 gnd Hall-Effekt (DE-588)4023028-4 gnd Einkristall (DE-588)4013901-3 gnd Polytypie (DE-588)4123966-0 gnd Kristallzüchtung (DE-588)4140616-3 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4176916-8 (DE-588)4023028-4 (DE-588)4013901-3 (DE-588)4123966-0 (DE-588)4140616-3 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization |
| title_auth | Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization |
| title_exact_search | Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization |
| title_full | Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization Norbert Schulze |
| title_fullStr | Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization Norbert Schulze |
| title_full_unstemmed | Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization Norbert Schulze |
| title_short | Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals |
| title_sort | near thermal equilibrium growth of 4h 6h and 15r silicon carbide single crystals sublimation growth of bulk sic by modified lely method and the structural electrical and optical characterization |
| title_sub | sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization |
| topic | Raman-Spektroskopie (DE-588)4176916-8 gnd Hall-Effekt (DE-588)4023028-4 gnd Einkristall (DE-588)4013901-3 gnd Polytypie (DE-588)4123966-0 gnd Kristallzüchtung (DE-588)4140616-3 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Raman-Spektroskopie Hall-Effekt Einkristall Polytypie Kristallzüchtung Siliciumcarbid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009496289&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT schulzenorbert nearthermalequilibriumgrowthof4h6hand15rsiliconcarbidesinglecrystalssublimationgrowthofbulksicbymodifiedlelymethodandthestructuralelectricalandopticalcharacterization |