Schulze, N. (2001). Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals: Sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization. Shaker.
Chicago-Zitierstil (17. Ausg.)Schulze, Norbert. Near Thermal Equilibrium Growth of 4H-, 6H-, and 15R-silicon Carbide Single Crystals: Sublimation Growth of Bulk SiC by Modified Lely Method and the Structural, Electrical, and Optical Characterization. Aachen: Shaker, 2001.
MLA-Zitierstil (9. Ausg.)Schulze, Norbert. Near Thermal Equilibrium Growth of 4H-, 6H-, and 15R-silicon Carbide Single Crystals: Sublimation Growth of Bulk SiC by Modified Lely Method and the Structural, Electrical, and Optical Characterization. Shaker, 2001.
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