Selective area chemical beam epitaxy of (Ga,In) (As, P) structures:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Eindhoven
Techn. Univ.
1999
|
| Schlagworte: | |
| Beschreibung: | Eindhoven, Techn. Univ., Diss., 1999 |
| Beschreibung: | 165 S. Ill., graph. Darst. |
| ISBN: | 9038609175 |
Internformat
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| illustrated | Illustrated |
| indexdate | 2024-07-09T18:53:29Z |
| institution | BVB |
| isbn | 9038609175 |
| language | English |
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| oclc_num | 247670627 |
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| physical | 165 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Techn. Univ. |
| record_format | marc |
| spelling | Verschuren, Coen Verfasser aut Selective area chemical beam epitaxy of (Ga,In) (As, P) structures Coen Adrianus Verschuren Eindhoven Techn. Univ. 1999 165 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Eindhoven, Techn. Univ., Diss., 1999 Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Drei-Fünf-Halbleiter (DE-588)4150649-2 s Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 |
| spellingShingle | Verschuren, Coen Selective area chemical beam epitaxy of (Ga,In) (As, P) structures Molekularstrahlepitaxie (DE-588)4170399-6 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4170399-6 (DE-588)4150649-2 (DE-588)4113937-9 |
| title | Selective area chemical beam epitaxy of (Ga,In) (As, P) structures |
| title_auth | Selective area chemical beam epitaxy of (Ga,In) (As, P) structures |
| title_exact_search | Selective area chemical beam epitaxy of (Ga,In) (As, P) structures |
| title_full | Selective area chemical beam epitaxy of (Ga,In) (As, P) structures Coen Adrianus Verschuren |
| title_fullStr | Selective area chemical beam epitaxy of (Ga,In) (As, P) structures Coen Adrianus Verschuren |
| title_full_unstemmed | Selective area chemical beam epitaxy of (Ga,In) (As, P) structures Coen Adrianus Verschuren |
| title_short | Selective area chemical beam epitaxy of (Ga,In) (As, P) structures |
| title_sort | selective area chemical beam epitaxy of ga in as p structures |
| topic | Molekularstrahlepitaxie (DE-588)4170399-6 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Molekularstrahlepitaxie Drei-Fünf-Halbleiter Hochschulschrift |
| work_keys_str_mv | AT verschurencoen selectiveareachemicalbeamepitaxyofgainaspstructures |